Research
Quantum-Wire Laser
Realization of high-performance photonic devices with ultra fine structures　
　 Quantum-film (Q-Film) lasers have been adopted for various applications. By the introduction of low-dimensional quantum-well structures, such as quantum-wire (Q-Wire) and quantum-box (Q-Box or Q-Dot) structures, carriers are confined to them stronger than to Q-Film due to density of states distributions of Q-Wire and Q-Box structures are sharper compared with those of the Q-Film structure as shown in Fig. 1. Higher optical gain and narrower gain spectrum properties of Q-Wire and Q-Box structures are obtained due to a sharper density of states feature as shown in Fig. 2. Consequently, it has been expected that the consumption electric power and the efficiency of Q-Wire and Q-Box lasers are superior to those of Q-Film lasers. The modulation speed and the linewidth might also be improved.
　Although various methods have been studied in order to fabricate Q-Wire and Q-Box lasers, we have been investigating a fabrication method, which combines electron beam (EB) lithography, dry etching and organometallic vapor-phase-epitaxial (OMVPE) regrowth because of a better position controllability and wider applications than other methods. Furthermore, this fabrication method is very effective in the production of distributed feedback (DFB) lasers.
　By using this fabrication method, the low-damage etched/regrown interface of GaInAsP/InP fine structures was realized, and the reliable room temperature (RT)-continuous wave (CW) operation of Q-Wire lasers was attained for the first time.
　
(I) Strain-compensated quantum-wire lasers　
　We realized a RT-CW operation of GaInAsP/InP quantum-wire lasers (wire width of 23 nm in a period of 80 nm, 5-stacked quantum-wires) fabricated by EB lithography, CH4/H2-reactive ion etching and 2-step OMVPE growth processes for the first time. From RT-CW lifetime measurement, no noticeable performance degradation was observed even after more than 12,000 hours. Good size distributions of multiple-quantum-wire structures have been obtained with standard deviations less than ±2 nm.
　GaInAsP/InP quantum-wire lasers with narrow wire structures (wire width of 14 nm in a period of 80 nm, 5-stacked quantum-wires) were realized. Lateral quantum confinement effect in this quantum-wire laser could be observed via sharper shape of the EL spectrum than that of quantum-film lasers in the higher transition energy region.
　In future, we aim to realize the narrow spectral width with good size uniformity of quantum-wires and the low threshold current operation of Q-Wire lasers by applications of distributed Bragg reflector (DBR) structure and DFB cavity.
　
(II) Photonic devices with arbitrary shaped low-dimensional structures　
　In quantum-wire structures with a strong lateral quantum confinement effect, the optical electric field of the parallel direction to the quantum-wire is stronger than that of the perpendicular direction to the quantum-wire. Energy levels for the radiation and the absorption having the polarization anisotropy can also be changed by the variation of the wire width. Accordingly, we will investigate arbitrary shaped low-dimensional quantum-well structures with good position controllability for the application to various photonic devices.
　
List of Reports
Journal Papers
1. N. Nunoya, M. Nakamura, H. Yasumoto, S. Tamura and S. Arai, “GaInAsP/InP Multiple-Layered Quantum-Wire Lasers Fabricated by CH4/H2 Reactive-Ion-Etching,” Jpn. J. Appl. Phys., vol. 39, no. 6A, pp.3410-3415, 2000.
2. N. Nunoya, H. Yasumoto, H. Midorikawa, S. Tamura and S. Arai, “Low Threshold Current Density Operation of GaInAsP/InP Lasers with Strain-Compensated Multiple-Layered Wirelike Active Regions,” Jpn. J. Appl. Phys., vol. 39, no. 10B, pp. L1042-L1045, 2000.
3. H. Yagi, K. Muranushi, N. Nunoya, T. Sano, S. Tamura and S. Arai, “GaInAsP/InP Strain-Compensated Quantum-Wire Lasers Fabricated by CH4/H2 Dry Etching and Organometallic Vapor-Phase-Epitaxial Regrowth,” Jpn. J. Appl. Phys., vol. 41, no. 2B, pp. L186-L189, Feb. 2002.
4. H. Yagi, K. Muranushi, N. Nunoya, T. Sano, S. Tamura and S. Arai, “Low-Damage Etched/Regrown Interface of Strain-Compensated GaInAsP/InP Quantum-Wire Laser Fabricated by CH4/H2 Dry Etching and Regrowth,” Appl. Phys. Lett., , vol. 81, no. 6, pp. 966-968, Aug. 2002.
5. T. Sano, H. Yagi, K. Muranushi, S. Tamura, T. Maruyama, A. Haque and S. Arai, “Multiple-Quantum-Wire Structures with Good Size Uniformity Fabricated by CH4/H2 Dry Etching and Organometallic Vapor-Phase-Epitaxial Regrowth,” Jpn. J. Appl. Phys., vol. 42, part 1, no. 6A, pp. 3471-3472, Jun. 2003.
6. H. Yagi, T. Sano, K. Ohira, T. Maruyama, A. Haque and S. Arai, “Room Temperature-Continuous Wave Operation of GaInAsP/InP Multiple-Quantum-Wire Lasers by Dry Etching and Regrowth Method,” Jpn. J. Appl. Phys., vol. 42, part 2, no. 7A, pp. L748-L750, Jul. 2003.
7. A. Haque, H. Yagi, T. Sano, T. Maruyama and S. Arai, “Electronic band structures of GaInAsP/InP vertically stacked multiple quantum wires with strain-compensating barriers,” J. Appl. Phys., vol. 94, no. 3, pp. 2018-2023, Aug. 2003.
8. K. Ohira, T. Murayama, H. Yagi, S. Tamura and S. Arai, “Distributed Reflector Laser Integrated with Active and Passive Grating Sections Using Lateral Quantum Confinement Effect,” Jpn. J. Appl. Phys., vol. 42, part 2, no. 8A, pp. L921-L923, Aug. 2003.
9. H. Yagi, T. Sano, K. Ohira, D. Plumwongrot, T. Maruyama, A. Haque, S. Tamura and S. Arai, “GaInAsP/InP Partially Strain-Compensated Multiple-Quantum-Wire Lasers Fabricated by Dry Etching and Regrowth Processes,” Jpn. J. Appl. Phys., vol. 43, no. 6A, Jun. 2004.
10. A. Haque, T. Maruyama, H. Yagi, T. Sano, D. Plumwongrot and S. Arai, “Anomalous in-plane polarization dependence of optical gain in compressively strained GaInAsP/InP quantum wire lasers,” to be published in IEEE J. Quantum Electron., 2004.
　
International Conferences

1. S. Arai, N. Nunoya, M. Nakamura, H. Yasumoto and S. Arai, “1.5 mm Wavelength GaInAsP/InP Low Threshold Current Lasers by Low-Damage CH4/H2-RIE and OMVPE Regrowth,” Int. Symposium on Ultra-Parallel Optoelectronics (30th Precision & Intelligence Lab. Symposium), C-2, pp.27-28, Kawasaki (Japan), Mar. 2000.
2. H. Yasumoto, N. Nunoya, H. Midorikawa, S. Tamura and S. Arai, “1.5 mm Wavelength Strain-Compensated GaInAsP/InP Wirelike Laser by CH4/H2 Reactive Ion Etching,” The 12th Int. Conf. on Indium Phosphide and Related Materials (IPRM’2000), WA3.2, pp. 498-501, Williamsburg (USA), May 2000.
3. S. Arai, “Low-Damage Fabrication of GaInAsP/InP Fine-Structures for High Performance Lasers,” 4th International Workshop of the Canadian - European Research Initiative on Nanostructures (CERION), (Invited), Wurzburg Univ. (Germany), July 2000
4. S. Arai, H. Yasumoto, N. Nunoya, H. Midorikawa, and S. Tamura, “Low-Damage GaInAsP/InP Fine Structure Lasers by CH4/H2-RIE and OMVPE Regrowth,” Int. Symposium on Formation, Physics and Device Application of Quantum Dot Structures (QDS’00), Th1-13, p. 206, Sapporo (Japan), Sept. 2000.
5. H. Midorikawa, N. Nunoya, K. Muranushi, S. Tamura and S. Arai, “Low-Damage Etched/Regrown Interfaces of GaInAsP/InP Wirelike Laser with Strain-Compensated MQW Structure,” The 13th Int’l Conf. on Indium Phosphide and Related Materials (IPRM’01), TuB2-2, pp. 67-70, Nara (Japan), May 2001.
6. H. Midorikawa, K. Muranushi, N. Nunoya, T. Sano, S. Tamura and S. Arai, “1.5 mm Wavelength GaInAsP/InP 5-Layered Quantum-Wire Lasers Fabricated by CH4/H2 Dry Etching and Regrowth,” The 14th Annual Meeting of The IEEE Lasers & Electro-Optics Society (LEOS2001), WA-5, pp. 407-408, San Diego (USA), Nov. 2001.
7. H. Yagi, K. Muranushi, N. Nunoya, T. Sano, N. Nunoya, S. Tamura and S. Arai, “Large Blue Shift in GaInAsP/InP Vertically-Stacked Multiple-Quantum-Wire-Lasers by Dry Etching and Regrowth Processes,” The 14th Indium Phosphide and Related Materials Conference (IPRM2002), A9-4, pp. 723-726, Stockholm (Sweden), May 2002.
8. H. Yagi, K. Muranushi, T. Sano, N. Nunoya, S. Tamura and S. Arai, “GaInAsP/InP Multiple-Quantum-Wire Lasers by CH4/H2 Reactive Ion Etching,” 7th OptoElectronics and Communications Conference (OECC2002), 10C3-4, pp. 158-159, Yokohama (Kanagawa, Japan), Jul. 2002.
9. H. Yagi, T. Sano, K. Ohira, T. Maruyama, A. Haque and S. Arai, “ RT-CW Operation of GaInAsP/InP Quantum-Wire Lasers Fabricated by Dry Etching and Regrowth Method,” Sixth International Symposium on Contemporary Photonics Technology (CPT 2003), PDP-1, pp. 1 (PD), Shinagawa (Japan), Jan. 2003.
10. K. Ohira, T. Murayama, H. Yagi, S. Tamura and S. Arai, “New Type Distributed Reflector Laser with Passive DBR Section By Using Lateral Quantum Confinement Effect,” Sixth International Symposium on Contemporary Photonics Technology (CPT 2003), PDP-3, pp. 3(PD), Shinagawa (Japan), Jan. 2003.
11. K. Ohira, T. Murayama, H. Yagi, S. Tamura and S. Arai, “Distributed Reflector Lasers Integrated with Passive Grating Region By Using Lateral Quantum Confinement Effect,” The 15th Indium Phosphide and Related Materials Conference (IPRM2003), WB1.5, pp. 251-254, Santa Barbara, Cal. (USA), May 2003.
12. A. Haque, H. Yagi, T. Sano, T. Maruyama and S. Arai, “Energy-Band Structures of GaInAsP/InP Vertically Stacked Multiple Quantum-Wire Lasers with Strain-Compensating Barriers,” The 15th Indium Phosphide and Related Materials Conference (IPRM2003), ThP11, pp. 433-436, Santa Barbara, Cal. (USA), May 2003.
13. H. Yagi, T. Sano, K. Ohira, T. Maruyama, A. Haque and S. Arai, “Over 2,000 Hours of RT-CW Operation of GaInAsP/InP Vertically-Stacked Multiple-Quantum-Wire Laser,” The 15th Indium Phosphide and Related Materials Conference (IPRM2003), ThA2.5, pp. 378-379, Santa Barbara, Cal. (USA), May 2003.
14. A. Haque, T. Maruyama, H. Yagi, T. Sano and S. Arai, “In-Plane Polarization Dependence of Gain in Strained Quantum-Wire Lasers with Strain-Compensating Barriers,” The IEEE/LEOS International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices (NUSOD-03), MA3, pp. 7-8, Tokyo (Japan), Oct. 2003.
15. T. Maruyama, A. Haque and S. Arai, “Polarization Anisotropy in Strained Quantum-Wire Structures Considering The Strain Relaxation Effect,” The 16th Annual Meeting of The IEEE Lasers & Electro-Optics Society (LEOS 2003), MD5, pp. 43-44, Tucson (USA), Oct. 2003.
16. K. Ohira, T. Murayama, H. Yagi, S. Tamura and S. Arai, “A Novel Distributed Reflector Laser Consisting of Width Modulated Wires in Active DFB and Passive DBR Sections,” The 16th Annual Meeting of The IEEE Lasers & Electro-Optics Society (LEOS 2003), TuD5, pp. 204-205, Tucson (USA), Oct. 2003.
17. S. Arai, H. Yagi, T. Sano, K. Ohira, T. Maruyama, A. Haque, D. Plumwongrot and S. Tamura, “GaInAsP/InP Long Wavelength Quantum-Wire Lasers,” Pre-Conference of IEEE International Semiconductor Laser Conference 2004 IEICE LQE/OPE Technical Meeting, 20-B, pp.33-36, Kobe (Japan), Dec. 2003.
18. H. Yagi, T. Sano, K. Ohira, D. Plumwongrot, T. Maruyama, A. Haque and S. Arai, “Reliable RT-CW operation of GaInAsP/InP multiple-quantum-wire lasers fabricated by dry etching and regrowth method,” Conference on Lasers and Electro Optics/International Quantum Electronics Conference (CLEO/IQEC 2004), CThL4, p. 138, San Francisco, Cal. (USA), May 2004.
19. H. Yagi, T. Sano, K. Ohira, K. Miura, T. Maruyama, A. Haque and S. Arai, “GaInAsP/InP Multiple-Quantum-Wire Lasers with Narrow (14 nm) Quantum-Wire Structure,” The 16th Indium Phosphide and Related Materials Conference (IPRM 2004), TuA3-4, pp. 100-103, Kagoshima (Japan), May/Jun. 2004.
20. K. Ohira, T. Murayama, M. Hirose, H. Yagi, S. Tamura, A. Haque and S. Arai, “Low-Threshold and High Efficiency Distributed Reflector Laser with Wirelike Active Regions and Quantum-Wire DBR,” The 16th Indium Phosphide and Related Materials Conference (IPRM 2004), WA4-6, pp. 562-563, Kagoshima (Japan), May/Jun., 2004.
21. H. Yagi, T. Sano, K. Miura, T. Maruyama, A. Haque and S. Arai, “1.5 mm Wavelength GaInAsP/InP Multiple-Quantum-Wire Lasers with SiO2/Semiconductor Reflector,” The 9th Optoelectronics and Communications Conference (OECC2004), 14E1-4, pp. 522-523, Yokohama (Japan), Jul. 2004.
　
Meeting Reports

1. H. Midorikawa, N. Nunoya, K. Muranushi, S. Tamura and S. Arai, “Low Threshold Operation of 1.5 mm Wavelength Strain-Compensated GaInAsP/InP Multiple Wirelike Laser Fabricated by Low Damage CH4/H2 Dry Etching and Regrowth,” ｢低損傷CH4/H2ドライエッチングと埋め込み再成長による1.5mm波長帯GaInAsP/InP歪補償多層細線レーザの低しきい値動作｣ Technical Report of IEICE, OPE2001-33/LQE2001-32 (2001-07), p.7-12, Tokyo (Japan), July 2001.
2. H. Midorikawa, K. Muranushi, N. Nunoya, T. Sano, S. Tamura and S. Arai, “1.5 mm Wavelength Strain-Compensated GaInAsP/InP 5-Layered Quantum-Wire Lasers by Low-Damage CH4/H2 Reactive Ion Etching Process,” The 8th Int. symposium on Quantum Effect Electronics, pp.50-53, Meguro, Oct. 2001.
3. K. Ohira, N. Nunoya, A. Onomura, H. Yagi, S. Tamura and S. Arai, “Distributed Reflector (DR) Laser with Wire Structure,” 「細線構造を有する分布反射型(DR)レーザ」 Technical Report of IEICE, LQE2002-16 (2002-05), pp. 61-64, Fukui (Japan), May 2002.
4. H. Yagi, K. Muranushi, T. Sano, N. Nunoya, S. Tamura and S. Arai, “GaInAsP/InP Strain-Compensated Multiple-Quantum-Wire Lasers Fabricated by Dry Etching and Regrowth,” 「ドライエッチングと埋め込み再成長法によるGaInAsP/InP歪補償多層量子細線レーザ」 Technical Report of IEICE, OPE2002-42/LQE2002-97 (2002-06), p.27-30, Tokyo (Japan), Jul. 2002.
5. S. Arai, H. Yagi, K. Ohira, and T. Sano, “Quantum-Wire Lasers by Top-Down Fabrication Method - Present and Future,” 「トップダウン的手法による長波長量子細線レーザの現状と展望」 第39回精研シンポジウム「フォトニックネットワークデバイスの新展開(2), A-2, pp. 8-15, Kanagawa (Japan), Mar. 2003.
6. H. Yagi, T. Sano, K. Ohira, T. Maruyama, A. Haque and S. Arai, “RT-CW Operation of GaInAsP/InP Strain-Compensated Multiple Quantum-Wire Lasers Fabricated by Dry-Etching and Regrowth,” 「ドライエッチングと再成長法によるGaInAsP/InP歪補償多層量子細線レーザの室温連続発振」 Technical Report of IEICE, OPE2003-31/LQE2003-25 (2003-07), pp.39-42, Tokyo (Japan), Jul. 2003.
7. K. Ohira, T. Murayama, H. Yagi, S. Tamura and S. Arai, “A Novel Distributed Reflector Laser Consisting of Width Modulated Wires in Active DFB and Passive DBR Sections,” The 10th International Symposium on Quantum Effect Electronics, pp. 34-37, Meguro (Japan), Nov. 2003.
8. H. Yagi, T. Sano, D. Plumwongrot, K. Miura, K. Ohira, T. Maruyama, A. Haque and S. Arai, “GaInAsP/InP Strain-Compensated Multiple-Quantum-Wire Lasers Fabricated by CH4/H2 Dry Etching and Regrowth Method,” 「CH4/H2ドライエッチングと埋め込み再成長法によるGaInAsP/InP歪補償多層量子細線レーザ」 Technical Report of IEICE, OPE2004-18/LQE2004-16 (2004-07), pp.1-6, Tokyo (Japan), Jul. 2004.
　
Domestic Conferences

1. H. Yasumoto, N. Nunoya, H. Midorikawa, S. Tamura and S. Arai, “Low Threshold Operation of Strain-Compensated GaInAsP/InP Multiple-Layered Wire Laser,” ｢GaInAsP/InP歪補償多層細線レーザの低しきい値動作｣ The 47th Spring Meeting, 2000; The Japanese Society of Applied Physics and Related Societies, 30a-N-11, Digest III-p.1159, Tokyo, Mar. 2000.
2. M. Midorikawa, N. Nunoya, K. Muranushi, S. Tamura and S. Arai, “Temperature Dependence of Spontaneous Emission Efficiency in Strain-Compensated GaInAsP/InP Wirelike Laser,” ｢GaInAsP/InP歪補償細線レーザの自然放出光効率の温度依存性｣ The 61st Autumn Meeting, 2000; The Japan Society Applied. Physics, 7a-R-6, Digest III-p.1000, Sapporo, Sep. 2000.
3. K. Muranushi, H. Midorikawa, N. Nunoya, S. Tamura, B. Chen and S. Arai, “Temperature Dependence of Threshold Current in Strain-Compensated GaInAsP/InP Wirelike Laser,” ｢GaInAsP/InP歪補償細線レーザにおけるしきい値電流の温度特性｣ The 48th Spring Meeting, 2001; The Japanese Society of Applied Physics and Related Societies, 30a-ZS-1, Digest III-p. 1150, Tokyo, Mar. 2001.
4. H. Midorikawa, N. Nunoya, K. Nuranushi, B. Chen and S. Arai, “Threshold Reduction by Thin InP Barrier in Regrowth Process of GaInAsP/InP MQW Laser,” ｢再成長プロセスにおけるInP障壁薄層化によるGaInAsP/InP MQWレーザの低閾値動作｣ The 48th Spring Meeting, 2001; The Japanese Society of Applied Physics and Related Societies, 30a-ZS-2, Digest III-p. 1150, Tokyo, Mar. 2001.
5. K. Muranushi, H. Midorikawa, N. Nunoya, K. Ohira, S. Tamura and S. Arai, “Room Temperature Operation of Strain-Compensated GaInAs/InP 5-Layered Quantum-Wire Laser,” 「GaInAsP/InP5層歪補償量子細線レーザの室温発振」The 62nd Autumn Meeting, 2001; The Japan Society Applied. Physics, 13p-B-7, Digest III-p.866, Aichi, Sep. 2001.
6. H. Midorikawa, K. Muranushi, N. Nunoya and S. Arai, “Low-damage etched/regrown interface of strain-compensated GaInAsP/InP quantum-wire laser,” 「GaInAsP/InP歪補償量子細線レーザの低損傷再成長界面」The 62nd Autumn Meeting, 2001; The Japan Society Applied. Physics, 13p-B-8, Digest III-p.867, Aichi, Sep. 2001.
7. K. Muranushi, H. Yagi, T. Sano, N. Nunoya, S. Tamura and S. Arai, “Realization of Narrow Wire Width Multiple-Layered Quantum-Wire Laser,” 「狭細線幅多層量子細線レーザの実現」 The 49th Spring Meeting, 2002; The Japanese Society of Applied Physics and Related Societies, 29a-YS-13, Digest III-p. 1145, Kanagawa, Mar. 2002.
8. H. Yagi, K. Muranushi, N. Nunoya, T. Sano, S. Tamura and S. Arai, “Wire Width Dependence of Blue Shift in Strain-Compensated GaInAsP/InP Quantum-Wire Lasers,” 「GaInAsP/InP歪補償量子細線レーザのブルーシフト量の細線幅依存性」 The 49th Spring Meeting, 2002; The Japanese Society of Applied Physics and Related Societies, 29a-YH-8, Digest III -p. 1394(III), Kanagawa, Mar. 2002.
9. T. Sano, H. Yagi, K. Muranushi, S. Tamura, T. Maruyama, A. Haque and S. Arai, “Multiple-Quantum-Wire Structure with Good Size Uniformity Fabricated by CH4/H2 Dry Etching,” 「CH4/H2ドライエッチングによるサイズ均一性に優れた多層量子細線構造」 The 63rd Autumn Meeting, 2002; The Japan Society of Applied Physics, 25a-ZB-3, Digest III -p. 1224, Niigata, Sep. 2002.
10. H. Yagi, T. Sano, K. Muranushi, S. Tamura, T. Maruyama, A. Haque and S. Arai, “Wire Width Dependence of Threshold Current Density in Strain-Compensated GaInAsP/InP Multiple-Quantum-Wire Lasers,” 「GaInAsP/InP歪補償多層量子細線レーザのしきい値電流密度の細線幅依存性」 The 63rd Autumn Meeting, 2002; The Japan Society of Applied Physics, 26p-A-10, Digest III-p. 1233, Niigata, Sep. 2002.
11. K. Ohira, N. Nunoya, A. Onomura, H. Yagi, T. Sano, S. Tamura, S. Arai, “Distributed Reflector Laser with Wire Structure,” 「細線構造を有する分布反射型(DR)レーザ」 The 63rd Autumn Meeting, 2002; The Japan Society of Applied Physics, 26p-A-14, Digest III -p. 1240, Niigata, Sep. 2002.
12. H. Yagi, T. Sano, K. Ohira, T. Maruyama, A. Haque, S. Tamura and S. Arai,” Room-Temperature Continuous Wave Operation of GaInAsP/InP Strain-Compensated Multiple-Quantum-Wire Lasers,” 「GaInAsP/InP歪補償多層量子細線レーザの室温連続発振」The 50th Spring Meeting, 2003; The Japanese Society of Applied Physics and Related Societies, 28a-YF-4, Digest III -p. 1233, Kanagawa, Mar. 2003.
13. K. Ohira, T. Murayama, H. Yagi, S. Tamura and S. Arai, “Distributed Reflector (DR) Laser with Passive Section Using Lateral Quantum Confinement Effect,” 「横方向量子閉じ込め効果を用いた受動領域を有する分布反射型(DR)レーザ」The 50th Spring Meeting, 2003; The Japanese Society of Applied Physics and Related Societies, 28p-ZQ-14, Digest III -p. 1240, Kanagawa, Mar. 2003.
14. A. Haque, H. Yagi, T. Sano, T. Maruyama and S. Arai,” Band Structure Analysis of Strained Quantum-Wires with Strain-Compensating Barriers Using 8 Band k.p Theory,”　「8 × 8行列k・p法による歪補償量子細線のバンド構造解析」The 50th Spring Meeting, 2003; The Japanese Society of Applied Physics and Related Societies, 28p-ZE-14, Digest III -p. 1466, Kanagawa, Mar. 2003.
15. T. Maruyama, A. Haque, T. Sano, H. Yagi and S. Arai,” Analysis of Polarization Dependence in Strained Quantum-Wire Structures,”「歪量子細線構造における偏光依存性の解析」The 50th Spring Meeting, 2003; The Japanese Society of Applied Physics and Related Societies, 28p-ZE-15, Digest III -p. 1466, Kanagawa, Mar. 2003.
16. A. Haque, T. Maruyama, H. Yagi, T. Sano and S. Arai, “Polarization anisotropy of optical gain in strained quantum-wire lasers with strain-compensating barriers,” 「歪補償障壁層を有する歪量子細線レーザの光利得の偏光異方性」 The 64th Autumn Meeting, 2003; The Japan Society of Applied Physics, 30a-ZF-11, Digest III -p. 1249, Fukuoka, Aug. 2003.
17. T. Murayama, K. Ohira, H. Yagi, S. Tamura and S. Arai, “Reflectivity Characteristics of DBR Using Lateral Quantum Confinement Effect,” 「横方向量子閉じ込め効果を用いた高反射DBRの反射率特性評価」 The 64th Autumn Meeting, 2003; The Japan Society of Applied Physics, 30p-YB-3, Digest III -p. 1039, Fukuoka, Aug. 2003.
18. K. Ohira, T. Murayama, H. Yagi, S. Tamura and S. Arai, “Low-Threshold Operation of Distributed Reflector (DR) Laser Integrated with Active and Passive Sections,” 「活性領域と受動DBR領域を集積した分布反射型(DR)レーザの低しきい値動作」 The 64th Autumn Meeting, 2003; The Japan Society of Applied Physics, 30p-YB-4, Digest III -p. 1039, Fukuoka, Aug. 2003.
19. H. Yagi, T. Sano, D. Plumwongrot, K. Ohira, T. Maruyama, A. Haque and S. Arai, “RT-CW Lifetime of GaInAsP/InP Strain-Compensated Multiple-Quantum-Wire Lasers,” 「GaInAsP/InP 歪補償多層量子細線レーザの室温連続動作寿命」 The 64th Autumn Meeting, 2003; The Japan Society of Applied Physics, 30p-YB-10, Digest III -p. 1041, Fukuoka, Aug. 2003.
20. T. Sano, H. Yagi, K. Ohira, D. Plumwongrot, T. Maruyama, A. Haque and S. Arai, “GaInAsP/InP Strain-Compensated 5-Layered Quantum-Wire Lasers with Narrow Wire (14nm) Structures,” 「狭細線(14nm)構造を有するGaInAsP/InP歪補償5層量子細線レーザ」The 51st Spring Meeting, 2004; The Japanese Society of Applied Physics and Related Societies, 31a-ZZ-4, Digest III, p. 1270, Tokyo, Mar. 2004.
21. H. Yagi, T. Sano, D. Plumwongrot, K. Miura, T. Maruyama, A. Haque and S. Arai, “TEM Observation of Regrown Interfaces for GaInAsP/InP Strain-Compensated Multiple-Quantum-Wire Lasers,” 「GaInAsP/InP歪補償多層量子細線レーザの再成長界面のTEM観測」The 51st Spring Meeting, 2004; The Japanese Society of Applied Physics and Related Societies, 31a-ZZ-5, Digest III, p. 1270, Tokyo, Mar. 2004.
22. K. Miura, H. Yagi, T. Sano, D. Plumwongrot, T. Maruyama, A. Haque and S. Arai, “GaInAsP/InP Strain-Compensated Multiple-Quantum-Wire Lasers with SiO2/Semiconductor Reflector,” 「SiO2/半導体反射鏡を有するGaInAsP/InP歪補償多層量子細線レーザ」The 51st Spring Meeting, 2004; The Japanese Society of Applied Physics and Related Societies, 31a-ZZ-6, Digest III, p. 1271, Tokyo, Mar. 2004.