List of Report

Semiconductor Lasers & Amplifiers
　
Journal Papers
(1) K. Kudo, S. Arai, and K. C. Shin, "The optical gain coupling saturation effect on the linewidth property of complex coupled DFB Lasers," IEEE Photon. Technol. Lett., vol.6, No.4, pp. 482-485, Apr. 1994.

(2) S. El Yumin, K.Komori, S.Arai, and G. Bendelli, "Taper-shape dependence of tapered-waveguide traveling wave semiconductor laser amplifier," IEICE Trans. Electron., vol.E77-C, no.4, pp. 624-632, Apr. 1994.

(3) S. El Yumin, K. Komori, and S. Arai, "GaInAsP/InP semiconductor vertical GRIN lens for semiconductor optical devices," IEEE Photon. Technol. Lett., vol.6, no.5, pp.601-604, May 1994.

(4) Y. Huang, K. Komori, K. Kudo, and S. Arai, "Saturation characteristics of GaInAs/GaInAsP/InP tensile strained quantum well semiconductor laser amplifier with tapered waveguide structures," IEEE J. Quantum Electron. vol.30, no.9, pp.2034-2039, Sept. 1994.

　
International Conferences
(1) M. Hotta, K. Kudo, Y. Nagashima, K. C. Shin, and S. Arai, "Ga0.3In0.7As/GaInAsP/InP complex coupled DFB lasers with an index coupling control structure," Fifth Optoe lectronics Conference (OEC'94), 15D1-3, Makuhari, July 1994.
　
Domestic Conferences
(1) M. Hotta, K. Kudo, Y. Nagashima, K. C. Shin, and S. Arai, "Fabrication of 1.55 μm complex coupled DFB lasers with an index coupling control structure," Nat. Conv. Rec. of The Japan Soc. of Appl. Phys., 29p-K-5, Kanagawa, Mar. 1994.

(2) K. C. Shin, S. Kurihashi, M. Hotta, M.Tamura, and S. Arai, "Theoretical calculation of a threshold current of a multiple-reflector micro-cavity laser,"Nat. Conv. Rec. of The Japan Soc. of Appl. Phys., 21p-S-3, Nagoya, Sept. 1994.
　
Quantum-Film, Quantum-Wire, and Quantum-Box Lasers
　
Journal Papers
(1) H. Hirayama, K. Matsunaga, M. Asada, and Y. Suematsu, "Lasing action of Ga0.67In0.33As/GaInAsP/InP tensile-strained quantum-box laser," Electron. Lett., vol.30, no.2, pp.142-143, Jan. 1994.

(2) H. Hirayama, J. Yoshida, Y. Miyake, and M. Asada, "Carrier capture time and its effect on the efficiency of quantum-well lasers," IEEE J. Quantum Electron., vol.30, no.1, pp.54-62, 1994.

(3) H. Hirayama, K. Matsunaga, M. Asada, T. Kakinuma, and M. Kumazawa, "Emission energy shift in GaInAs/GaInAsP strained quantum-box structures due to 0-dimensional quantum-box effect," Japan. J. Appl. Phys., vol.33, no.6A, pp.3571-3577, 1994.

(4) H. Hirayama, and M. Asada, "Hole capture rate of GaInAs/InP strained quantum-well lasers," Oprtical and Quantum Electronics (Chapman&Hall), vol.26, no.2, S719-S729, 1994.

(5) K. Shimomura, and S. Arai, "Semiconductor waveguide optical switches and modulators," Fiber and Integrated Optics, vol.13, no.1, pp.65-100, Jan. 1994.

(6) K. Kudo, Y. Nagashima, M. Tamura, S. Tamura, A. Ubukata, and S. Arai, "Fabrication of GaInAs/GaInAsP/InP multi-quantum-wires and -boxes by substrate-potential-controlled electron cyclotron resonance reactive ion beam etching," Jpn. J. Appl. Phys., vol.33, no.10A, pp. L1383-L1385, Oct. 1994.

(7) K.C. Shin, S. Arai, Y. Nagashima, K. Kudo, and S. Tamura, "Temperature dependence of Ga0.66In0.34As/InP tensile-strained quasi-quantum-wire laser fabricated by wet chemical etching and 2-step OMVPE growth," IEEE Photon. Technol. Lett., to be published.

　
International Conferences
(1) S. Arai, Y. Miyamoto, and K. Furuya, "Study of semiconductor intersectional optical switches/modulators," The International Symposium on Ultrafast and Ultra-Parallel Optoelectronics (UUO), Makuhari/Japan, 1-17, July 1994.

(2) S. Arai, M. Asada, H. Hirayama, K. Kudo, S. Tamura, and K.C. Shin, "Long wavelength quantum-wire and quantum-box lasers --- Present status and prospects in future," (Invited) The 5th Optoelectronics Conf. (OEC '94), 14D4-1, Makuhari/ Japan, July 1994.

(3) M. Tamura, Y. Nagashima, K. Kudo, K. C. Shin, S. Tamura, and S. Arai, "Investigation of surface damage in GaInAs/GaInAsP/InP wire structures by low-energy-reactive-ion assisted radical etching," The 12th Int. Conf. on Solid State Devices and Materials (SSDM '94), Yokohama/Japan, PB-2-7, pp.199-201, Aug. 1994.

(4) H. Hirayama, and M. Asada, "Reduction of size fluctuation effect in GaInAs/ GaInAsP quantum-box lasers using tensile-strained active region," Int. Semiconductor Laser Conf., P4, Hawaii/USA, Sep. 1994.

(5) S. Arai, "Fabrication and operation properties of GaInAsP/InP quasi-quantum-wire lasers," (Invited) The 2nd Int. Workshop of the Phantoms Network (PHASDOM94), Dublin, 1994.
　
Domestic Conferences
(1) K. C. Shin, K. Kudo, Y. Nagashima, S. Tamura, and S. Arai, "Temperature dependence of Ga0.66In0.34As/InP tensile-strained quasi-quantum-wire laser fabricated by wet chemical etching and 2-step OMVPE growth," Nat. Conv. Rec. of Japan Soc. Appl. Phys., 30p-K-1, Kanagawa, Mar. 1994.

(2) A. Nakatani, K. Komori, S. Arai, and A. Katsube, "Lasing Action of GaInAs/InP Quantum-Wire Laser by Selective Growth to Side Trench," Nat. Conv. Rec. of Japan Soc. Appl. Phys., 30p-K-3, Kanagawa, Mar. 1994.

(3) H. Hirayama, M. Asada, and M. Kumazawa, "Analysis of threshold current density of GaInAs/GaInAsP/InP tensile-strained-quantum-box lasers," Nat. Conv. Rec. of Japan Soc. Appl. Phys., 30p-K-3, Kanagawa, Mar. 1994.

(4) M. Tamura, Y. Nagashima, K. Kudo, S. Tamura, A. Ubukata, S. Arai, "Investigation of surface damage in GaInAs/GaInAsP/InP wire structures by low-energy-reactive-ion assisted radical etching," Nat. Conv. Rec. of Japan Soc. Appl. Phys., 30a-V-10, Kanagawa, Mar. 1994.

(5) S. Arai, "Fabrication of GaInAs/InP quantum-wires and -boxes semiconductor laser," May 1994.

(6) S. Arai, K. C. Shin, T. Takizawa, M. Tamura, M. Hotta, and M. Nakahara, "Fabiracation of GaInAs(P)/InP ultra-fine structure and its application to quantum-wire optical devices," Oct. 1994.
　
Nanometer Structure Fabrication Technology
　
Journal Papers
(1) T. Takizawa, S. Arai and M. Nakahara, "Fabrication of vertical and uniform-size porous InP structure by electrochemical anodization," Jpn. J. Appl. Phys., vol.33, no.5A, pp.L643-645, May., 1994.

(2) E. Kikuno, M. Amiotti, T. Takizawa, and S. Arai, "Anisotropic refractive index of porous InP fabricated by anodization of (111)A surface," Jpn. J. Appl. Phys., vol.34, no.1, pp.177-178, Jan., 1995.

　
Domestic Conferences
(1) T.Takizawa, M.Nakahara, and S.Arai, "Fabrication of 60nm pitch InP piller structures with anodization," 「陽極化成法による60nmピッチInP柱状構造の試作」 Nat. Conv. Rec. of The Japan Soc. of Appl. Phys., 20p-T-11, Nagoya, Sept., 1994.

(2) E.Kikuno, M.Amiotti, T.Takizawa, and S.Arai, "Birefringence of porous structure fabricated on (111)A n-InP substrate with anodization," 「陽極化成法により(111)A面n形InP基板上に形成したポーラス構造の複屈折率特性」 Nat. Conv. Rec. of The Japan Soc. of Appl. Phys., 20p-R-3, Nagoya, Sept., 1994.