Semiconductor Lasers & Amplifiers

(1) K.C.Shin, M. Tamura, A. Kasukawa, N. Serizawa, S. Kurihashi, S. Tamura, and S. Arai, "Low Threshold Current Density Operation of GaInAsP/InP Laser with Multiple-Reflector Micro-Cavities," IEEE Photo.Tech.Lett., vol. 7, no. 10, pp. 1119-1121, 1995.

(2) K.C.Shin, M. Tamura, N. Serizawa, S. Kurihasi, S. Tamura, and S. Arai, "Fabrication and Low Threshold current Density CW Operation of GaInAsP/InP Multiple-Reflector Micro-Cavity Laser," to be published in Optical and Quantum Electronics, vol. 27, 1995.

(1) K.C.Shin, M. Tamura, S. Kurihashi, S. Tamura, M. Hotta, S. Arai, and N. Serizawa, "GaInAsP/InP Multiple-Reflector Micro-Cavity Structure Fabricated by EB Lithography and Selective Etching," 7th International Conference of Indium Phosphide and related Compound (IPRM '95), ThP.50, Hokkaido, Apr. 1995.

(2) K.C.Shin, M. Tamura, N. Serizawa, S. Kurihashi, S. Tamura, and S. Arai, "Low Threshold Current Density CW Operation of GaInAsP/InP Multiple-Reflector Micro-Cavity Lasers," 7th International Conference of Indium Phosphide and Related Compound (IPRM'95), FB2-5 (Post Deadline), Hokkaido, Apr. 1995.

(3) S.El Yumin, S. Arai, T. Kimura, H. Kasyou, K. Saito, and A.Ubukata, "Monolithic Integration of GaInAsP/InP Collimating GRIN Lens with Tapered Waveguide Active Region", Seventh International Conference on Indium Phosphide and Related Materials, Sapporo, May 1995.

(1) K.C.Shin, M. Tamura, N. Serizawa, S. Kurihashi, S. Tamura, and S. Arai, "Fabrication of Multiple-Reflector Micro-Cavity Structure by EB Lithography and Selective Etching," 「電子ビーム露光及び選択エッチングによる多重反射極微共振器半導体レーザの作製」 Nat. Conv. Rec. of Japan Soc. Appl. Phys., 30a-ZG-9, Kanagawa, Mar. 1995.

(2) K.C.Shin, M. Tamura, S. Kurihashi, N.Serizawa, S. Tamura, S. Arai, and A. Kasukawa, 「多重反射極微共振器半導体レーザの試作」、第１２回半導体レーザシンポジウム、Yokohama, Mar. 1995.

(3) K.C.Shin, M. Tamura, N. Serizawa, S. Kurihashi, S. Tamura, and S. Arai, "Fabrication and Low Threshold Current Density CW Operation of GaInAsP/InP Multiple-Reflector Micro-Cavity Laser,"「第２回量子効果エレクトロニクス」並びに東京工業大学創造プロジェクト研究・「電子波・光波先端エレクトロニクス研究体」シンポジウム、 July 1995.

(1) K.C.Shin, S.Arai, Y.Nagashima, K.Kudo and S.Tamura, "Temperature Dependence of Ga_0.66In_0.34As/InP Tensile-Strained Quasi-Quantum-Wire Laser Fabricated by Wet Chemical Etching and 2-Step OMVPE Growth," IEEE Photon Technol. Lett., 7 [4] pp.345-347, 1995.

(2) M.Tamura, Y.Nagashima, K.Kudo, K.C. Shin, S. Tamura, A. Ubukata and S.Arai, "Surface Damage in GaInAs/GaInAsP/InP Wire Structures Prepared by Substrate-Potential-Controlled Reactive Ion Beam Etching," Jpn.J.Appl.Phys., vol.34,6A, pp.3307-3308, 1995.

(1) S.Arai, M.Tamura, K.C.Shin and S.Tamura, "Fabrication of InP-Based Quantum-Wires and Its Application to Lasers," (Invited)The 7th Int. Conf. on Indium Phosphide and Related Materials (IPRM'95), Sapporo, ThA2.1, May 1995.

(2) S.Arai, M.Asada and K.C.Shin, "GaInAsP/InP Quantum Wire Lasers,"(Invited) The 10th Int. Conf. on Integrated Optics and Optical Fiber Communication (IOOC-95), Hong Kong, FB1-1, May 1995.

(1) M.Tamura, T.Kojima,K.C.Shin, S.Tamura and S.Arai, "Fabrication of GaInAsP Quantum-Wire Structure by ECR Dry-etching and Hydrogen Plasma Cleaning," 「ECRドライエッチングによるGaInAsP/InP量子細線構造作製と水素プラズマクリーニング処理」 Nat. Conv. Res. of Japan Soc. Appl. Phys., 28p-ZB-10, Kanazawa, Aug. 1995.

(2) T.Kojoma, M.Tamura, K.C.Shin, S.Tamura and S.Arai, "Fabrication of GaInAsP/InP Semiconductor Lasers with Compressive-Strained Wire Structure," 「GaInAsP/InP圧縮歪量子細線構造を有する半導体レーザの試作」 Nat. Conv. Res. of Japan Soc. Appl. Phys., 28p-ZA-3, Kanazawa, Oct. 1995.

(1) Takizawa, M. Nakahara, E. Kikuno, S. Arai, "Fabrication of 60 nm-pitch Ordered InP Pillars by EB-lithography and Anodization,"　to be published Special Issue #2 of the J. Electron.Mater., 1996