List of Report
Quantum-Film, Quantum-Wire, and Quantum-Box Lasers
Journal Papers
(1) K. C .Shin, M. Tamura, N. Serizawa, S. Kurihashi, S. Tamura and S. Arai, "Fabrication and low threshold current density CW operation of GaInAsP/InP multiple-reflector microcavity laser," Optical and Quantum Electronics, vol. 28, pp.487-493, 1996.

(2) K. C. Shin, N. Serizawa, M. M. Raj and S. Arai, “Drive Current and Design Consideration of an Ultra-Low Threshold Current Laser for Optical Parallel Data Communication,” to be published on IEEE Lightwave Technology.
　
International Conferences
(1) S. Arai, M. Asada, K. C. Shin and T. Kojima, “GaInAsP/InP Low Dimensional Quantum Well Lasers,” The 29th Seminar on Science & Technology (Optoelectronics), Tokyo, 7, Feb. 1996.

(2) T. Kojima, M. Tamura, K. C. Shin, S. Tamura and S. Arai, “Fabrication of GaInAsP/InP Compressively-Strained Single-Layer Quantum-Wire Lasers,” 13th Semiconductor Laser Symposium, Yokohama, 24, Mar. 1996.

(3) S. Arai, “Quantum-Wires and -Boxes based on GaInAsP/InP and Related Materials for Advanced Semiconductor Lasers,” (Invited) The 8th Int. Conf. on Indium Phosphide and Related Materials (IPRM'96), Schw・bisch Gm・nd (Germany), PLENARY 2, Digest pp.7-10, Apr. 1996.

(4) T. Kojima, M. Tamura K. C. Shin, S. Tamura and S. Arai, “Temperature Dependences of GaInAsP/InP Compressively-Strained Quantum-Wire Lasers -Wires Fabricated by EB Lithography and 2-step OMVPE Growth,” The 8th Int. Conf. on Indium Phosphide and Related Materials (IPRM'96), Schw・bisch Gmund (Germany), ThA1-5, Digest pp.731-734, Apr. 1996.

(5) S. Arai, “GaInAsP/InP Multiple-Microcavity Laser for Low Threshold Operation,” (Invited) First Optoelectronics and Communications Conference (OECC’96), Makuhari, 16D2-1, Digest pp.70-71, July 1996.

(6) K. C. Shin, N. Serizawa and S. Arai, “Calculation of a Drive Current in Ultra-Low Threshold Current Laser,” First Optoelectronics and Communications Conference (OECC’96), Makuhari, 18P-29, Digest pp.478-479, July 1996.

(7) T. Kojima, M. Tamura, X. Y. Jia, T. Ando, H. Nakaya, S. Tanaka, S. Tamura and S. Arai, “1.5mm GaInAsP/InP Compressively-Strained Quantum-Wire Lasers Fabricated by EB-Lithography and Wet-Chemical Etching,” Int. Symposium on Formation, Physics and Device Application of Quantum Dot Structures (QDS’96), Sapporo, Th2-8, Digest p.190, Nov. 1996.
　
Meeting Reports
(1) Kojima, M. Tamura, X. Y. Jia, S. Tamura, S. Arai, H. Nakaya and S. Tanaka, “Fabrication of Nano-Structures Using EB-Lithography and Its Application to GaInAsP/InP Quantum-Wire Lasers,”「EB露光法による極微構造の作製とGaInAsP/InP量子細線レーザヘの応用」 電子情報通信学会、レーザ・量子エレクトロニクス、信学技報LQE-96-86, pp.55-60, Oct. 1996.
　
Domestic Conferences
(1) T. Kojima, M. Tamura, K. C. Shin, S. Tamura and S. Arai, “Temperature Dependences of GaInAsP/InP Compressively-Strained Quantum-Wire Lasers,”「GaInAsP/InP圧縮歪量子細線レーザの温度依存性」 Nat. Conv. Res. of Japan Soc. Appl. Phys., 27a-C-11, DigestIII-p.1044, Asaka, Mar. 1996.

(2) S. Kurihashi, K. C. Shin, M. Tamura, N. Serizawa, S. Tamura and S. Arai, “Fabrication of Multiple Microcavity Laser with narrow groove by ECR Dry-etching,”「ECRドライエッチングを用いた狭溝幅多重極微共振器半導体レーザの試作」 Nat. Conv. Res. of Japan Soc. Appl. Phys., 26p-C-10, DigestIII-p.1027, Asaka, Mar. 1996.

(3) S. Kurihashi, K. C. Shin and S. Arai, “Analysis of diffraction loss in Multiple Microcavity Laser structure,”「回折を考慮した多重極微共振器半導体レーザの理論解析」 Nat. Conv. Rec. of IEICE Japan, C-383, p.383, Tokyo, Mar. 1996.

(4) T. Kojima, M. Tamura, S. Tamura, H. Nakaya, S. Tanaka and S. Arai, “Temperature Characteristics of GaInAsP/InP Compressively-Strained Quantum-Wire Lasers,” 「GaInAsP/InP圧縮歪量子細線レーザの温度特性」 Nat. Conv. Res. of Japan Soc. Appl. Phys., 8p-KH-11, DigestIII-p.952, Fukuoka, Sep. 1996.

(5) N. Serizawa, M. Madhan Raj, S. Peng and S. Arai, “Calculation of Characteristics of Multiple Microcavity Laser Diodes by 3-Dimensional Waveguide analysis with Diffraction Loss,” 「回折損失を考慮した3次元導波路解析による多重極微共振器半導体レーザの特性解析」 Nat. Conv. Res. of Japan Soc. Appl. Phys., 8p-KH-15, Digest III-p.954, Fukuoka, Sep. 1996.

(6) M. Madhan Raj, S. Arai, N. Serizawa and M. Tamura, “Photon Recycling Effect in Semiconductor Lasers using Low Dimensional Structures,” 「低次元量子井戸半導体レーザにおけるフォトンリサイクリング効果」 Nat. Conv. Rec. of IEICE Japan, C-323, p.323, Kanazawa, Sep. 1996.
　
Semiconductor Photonic Devices
Journal Papers
(1) T. Takizawa, A. Uchino and S. Arai, “Proposal of Semiconductor Directional-Coupler-Type All-Optical Switch with Tapered-Waveguide Structure,” to be published on Jpn. J. Appl. Phys. vol. 36, no. 2 in Feb. 1997.

(2) T. Takizawa, A. Uchino, T. Shimizu, Y. Takeuchi and S. Arai, “Switching Operation of GaInAs/InP Multiple-Quantum-Well Directional-Coupler-Type All-Optical Switch,” to be published on. Jpn. J. Appl. Phys., vol. 36, no. 3 in Mar. 1997.
　
International Conferences
(1) T. Takizawa, E. Kikuno, A. Uchino and S. Arai, “Analysis of Directional-Coupler-Type All-Optical Switch with Tapered-Waveguide Structure,” First Optoelectronics and Communications Conference (OECC’96), 18P-37, pp494-495, Makuhari, July 1996.
　
Meeting Reports
(1) T. Takizawa, A. Uchino and S. Arai, “The All-Optical Directional-Coupler Switch with the Tapered-Shape Structures,”「テーパ構造を有する方向性結合型光スイッチング素子」 フォトニックスイッチング研究会、信学技報PS96-14, pp29-34, July 1996.
　
Domestic Conferences
(1) E. Kikuno, T. Takizawa, A. Uchino, M. Kondo and S. Arai, "Tapered-Waveguide Semiconductor Directional-Coupler Optical Switch by Optical Pumping,"「テーパ状導波路を有する半導体光励起方向性結合型光スイッチ」 Nat. Conv. Rec. of IEICE Japan, C-269, Tokyo, Mar. 1996.

(2) T. Takizawa, A. Uchino, T. Shimizu, Y. Takeuchi and S. Arai, "Fabrication of GaInAs/InP Directional-Coupler-Type All-Optical Switch," 「GaInAs/InP長波長帯方向性結合型全光スイッチング素子の試作」 Nat. Conv. Res. of Japan Soc. Appl. Phys., 7a-KG-5, Fukuoka, Sep. 1996.
　
Processing for Nanometer Structures
Journal Papers

(1) M. Tamura, K. C. Shin, N. Serizawa, and S. Arai, “Stripe Direction Dependence of Mesa Angle Formed on (100) InP by Selective Etching using HCl Solution,” Jpn. J. Appl. Phys, vol.35, pp.2383-2384, 1996.

(2) T. Takizawa, M. Nakahara, E. Kikuno, and S. Arai, “Fabrication of 60 nm Pitch Ordered InP Pillars by EB-Lithography and Anodization,” J. Electron. Mater. vol. 25, pp.657-660, 1996.
　
International Conferences

(1) M. Tamura, T. Kojima, T. Ando, S. Tamura and S. Arai, “Fabrication of GaInAsP/InP Multiple- Quantum Wire Structures by Cl2-ECR Dry Etching,” Int. Symposium on Formation, Physics and Device Application of Quantum Dot Structures (QDS’96), Sapporo, Th2-10, Nov. 1996.
　
Domestic Conferences


(1) M. Tamura, T. Kojima, T. Ando, S. Tamura, N. Nunoya and S. Arai, “Fabrication of GaInAsP/InP Multiple-Quantum-Wire Laser Diodes by Cl2-ECR Dry-etching,” 「ECRドライエッチングによるGaInAsP/InP量子細線構造を有する電流注入型素子の試作」 Nat. Conv. Res. of Japan Soc. Appl. Phys., 9p-C-7, Fukuoka, Sep. 1996.

(2) X. Y. Jia, T. Kojima, M. Tamura, S. Tamura, and S. Arai, “Measurement Size Fluctuation of Quantum-Wire Structure by Electron-Beam Lithography,” 「EB露光法により作製した量子細線構造のサイズ揺らぎ」 Nat. Conv. Res. of Japan Soc. Appl. Phys., 9a-S-10, Fukuoka, Sep. 1996.