List of Report
Quantum-Film, Quantum-Wire, and Quantum-Box Lasers
Journal Papers
(1) K. C. Shin, N. Serizawa, M. M. Raj and S. Arai, "Drive Current and Design Consideration of an Ultra-Low Threshold Current Laser for Optical Parallel Data Communication," IEEE Lightwave Technol., vol.15, no.5, pp.845-851, 1997.

(2) M. M. Raj, S. Arai and M. Tamura, "Photon recycling effect in semiconductor lasers using low dimensional structures," Jpn. J. Appl. Phys., vol.36, no.10A, pp.6368-6375, 1997.

(3) T. Kojima, S. Arai and G. U. Bacher, "Anisotropic polarization properties of photoluminescence from GaInAsP/InP quantum-wire structures fabricated by two-step organometallic vapor phase epitaxy growth," Jpn. J. Appl. Phys., vol.37, no.1A/B, pp.L46-L49, 1998.
　
International Conferences
(1) S. Arai, "GaInAsP/InP long-wavelength quantum-wire lasers by EB-lithography and OMVPE regrowth," The 4th Phantoms Strategic Domain Meetings (PHASDOM'97), Aachen (Germany), D2.8, Mar. 1997.

(2) T. Kojima, X. Y. Jia, H. Nakaya, S. Tanaka, S. Tamura, S. Arai and G.Bacher, "Lasing properties of GaInAsP/InP quantum-wire lasers," 14th Semiconductor Laser Symposium, Yokohama, 18, Mar. 1997.

(3) T. Kojima, M. Tamura, X. Y. Jia, H. Nakaya, T. Ando, S. Tanaka, S. Tamura, S. Arai and G. U. Bacher, "Anisotropic polarization properties of GaInAsP/InP compressively-strained quantum-wire structure," The 9th Int. Conf. on Indium Phosphide and Related Materials (IPRM'97), Hyannis (USA), MD7, pp.226-229, May 1997.

(4) S. Arai, "Fabrication and characterization of GaInAsP/InP long-wavelength quantum-wire lasers," The 10th IEEE Lasers and Electro-Optics Society Meeting (LEOS'97), San Francisco (USA), ThY1, pp.492-493, Nov. 1997.

(5) S. Arai, "Nanometer scale semiconductor photonics - Low-dimensional quantum structures towards high performance lasers -," Int'l Topical Workshop on Contemporary Photonic Technologies (CPT'98), Tokyo, Wa-04, pp.99-102, Jan. 1998.
　
Domestic Conferences
(1) T. Kojima, X. Y. Jia, H. Nakaya, S. Tanaka, S. Tamura and S. Arai, "Anisotropic Polarization Properties of PL from GaInAsP/InP Quantum-Wire Structure," 「GaInAsP/InP量子細線構造のPL偏光特性」 Nat. Conv. Res. of Japan Soc. Appl. Phys., 29p-T-15, Digest 0-p.1337, Chiba, Mar. 1997.

(2) S. Arai and T. Kojima, "GaInAsP/InP Long-Wavelength Quantum-Wire Semiconductor Lasers,"「長波長帯量子細線半導体レーザ」 Nat. Conv. Rec. of IEICE Japan, C-4-20, p.266, Tokyo, Sept. 1997.

(3) H. Nakaya, T. Kojima, S. Tanaka, S. Tamura and S. Arai, "Fabrication of 50nm-period of GaInAsP/InP Compressively-strained Quantum-Wire Lasers," 「周期50nm GaInAsP/InP圧縮歪量子細線レーザの作製」 Nat. Conv. Res. of Japan Soc. Appl. Phys., 2a-ZC-5, DigestV-p.1073, Akita, Oct. 1997.

(4) T. Kojima, H. Nakaya, S. Tanaka, S. Tamura and S. Arai, "Cavity Length Dependence of Threshold Current of GaInAsP/InP Quantum-Wire Lasers," 「GaInAsP/InP量子細線レーザの発振しきい値電流の共振器長依存性」 Nat. Conv. Res. of Japan Soc. Appl. Phys., 2a-ZC-6, DigestV-p.1073, Akita, Oct. 1997.

(5) S. Tanaka, T. Kojima, H. Nakaya, S. Tamura and S. Arai, "Regrowth Temperature Dependence of GaInAsP/InP Single-Layer Quantum-Well Lasers," 「GaInAsP/InP単層量子井戸レーザの埋め込み成長温度依存性」 Nat. Conv. Res. of Japan Soc. Appl. Phys., (29p-ZH-2), Tokyo, Mar. 1998.

(6) T. Kojima, H. Nakaya, S. Tanaka, S. Tamura and S. Arai, "Temperature Dependence of Threshold Current Density of GaInAsP/InP Quantum-Wire Lasers," 「GaInAsP/InP量子細線レーザの発振しきい値電流の温度依存性」 Nat. Conv. Res. of Japan Soc. Appl. Phys., (29p-ZH-3), Tokyo, Mar. 1998.

(7) M. Tamura, T. Ando, N. Nunoya, S. Tamura and S. Arai, "Estimation Sidewall Recombination Velocity of GaInAsP/InP Multiple Wire Laser from Its Spontaneous Emission Efficiency," 「GaInAsP/InP細線レーザの自然放出光効率からの表面再結合速度の見積もり」 Nat. conv. Res. of Japan Soc. Appl. Phys.,(29p-ZH-4), Tokyo, Mar. 1998.

(8) H. Nakaya, T. Kojima, S. Tanaka, H.Yasumoto, S. Tamura and S. Arai, "Gain spectrum measurement of GaInAsP/InP Compressively-Strained Quantum-Wire Lasers," 「GaInAsP/InP圧縮歪量子細線レーザの光利得スペクトルの測定」 Nat. Conv. Res. of Japan Soc. Appl. Phys., (29p-ZH-5), Tokyo, Mar. 1998.

(9) K. Numata, M. Madhan Raj, S. Toyoshima, H. Nakaya, and S. Arai, "Fabrication of Multiple Microcavity Laser having Air/Semiconductor-Bragg Reflective Mirrors," 「空気/半導体-ブラッグ反射鏡を有する多重極微共振器半導体レーザの試作」 Nat. Conv. Res. of Japan Soc. Appl. Phys., (30a-ZH-8), Tokyo, Mar. 1998.

(10) M. Madhan Raj, K. Numata, S. Toyoshima, S. Peng, Y. Miyamoto, and S. Arai, "Application of Benzocyclobutene (BCB) Polymer to Active Opto-electronics Devices," 「ベンゾシクロブテン(BCB)の動的光デバイスへの応用」 Nat. Conv. Res. of Japan Soc. Appl. Phys., (30a-ZH-9), Tokyo, Mar. 1998.
　
Semiconductor Photonic Devices
Journal Papers
(1) T. Takizawa, A. Uchino and S. Arai, "Proposal of Semiconductor Directional-Coupler-Type All-Optical Switch with Tapered-Waveguide Structure," Jpn. J. Appl. Phys. Vol. 36, No. 2 in Feb. 1997.

(2) T. Takizawa, A. Uchino, T. Shimizu, Y. Takeuchi and S. Arai, "Switching Operation of GaInAs/InP Multiple-Quantum-Well Directional-Coupler-Type All-Optical Switch," Jpn. J. Appl. Phys., Vol. 36, No. 3 in Mar. 1997.
　
Domestic Conferences
(1) T. Takizawa and S. Arai, "Analysis of Directional-Coupler-Type All-Optical Switch with Low Dimensional Quantum-Well Structures," 「低次元量子井戸構造を導入した長波長帯方向性結合型全光スイッチの動作解析」 Nat. Conv. Res. of Japan Soc. Appl. Phys., 28p-NE-6, Chiba, March 1997

(2) T. Shimizu, S. Yamazaki, and S. Arai, "Waveguide Width Dependence of Crosstalk for MQW Directional-Coupler type All-Optical Switch," 「MQW方向性結合型全光スイッチにおけるクロストークの導波路幅依存性」 Nat. Conv. Res. of Japan Soc. Appl. Phys., 29a-SZL-3, Tokyo, March 1998
　
Processing for Nanometer Structures
International Conferences
(1) M. Tamura, T. Ando, N. Nunoya, S. Tamura, S. Arai and G. U. Bacher, "Surface damage in GaInAsP/InP wire structures by Cl2/H2-ECR dry etching," The 9th Int. Conf. on Indium Phosphide and Related Materials (IPRM'97), Hyannis (USA), ThA4, pp.582-585, May 1997.
　
Domestic Conferences

(1) X. Y. Jia, T. Kojima, Y. Hayafune, S. Tamura, M. Watanabe and S. Arai, "Reduction of the Size Fluctuation of Quantum-Wire Structures Fabricated by Proximity Effect Correction," 「近接効果補正露光による量子細線構造のサイズ揺らぎの低減」 Nat. Conv. Rec. of Japan Soc. Appl. Phys., 29a-X-4, Chiba, Mar. 1997.

(2) M. Tamura, T. Ando, N. Nunoya, S. Tamura, S. Arai and G. U. Bacher, "Surface damage in GaInAsP/InP Quantum-Wire Structures by Cl2/H2-ECR Dry-Etching," 「Cl2/H2-ECRドライエッチングによるGaInAsP/InP細線構造の作製とその損傷評価」 Nat. Conv. Rec. of Japan Soc. Appl. Phys., 30p-ZD-15, Chiba, Mar. 1997.

(3) M. Tamura, T. Ando, N. Nunoya, S. Tamura, S. Arai and M. Nakamura, "Fabrication of GaInAs(P)/InP Multiple-Quantum-Wire Structure by ECR Dry-Etching," 「ECR<ドライエッチングによるGaInAs(P)/InP多層量子細線構造の作製」 Nat. Conv. Rec. of Japan Soc. Appl. Phys., 4a-A-8, Akita, Oct. 1997.