| List of Report |
| Quantum-Film, Quantum-Wire, and Quantum-Box Lasers |
| Journal Papers |
| (1) T. Kojima, S. Arai and G. U. Bacher, "Anisotropic
polarization properties of photoluminescence from GaInAsP/InP
quantum-wire structures fabricated by two-step organometallic
vapor phase epitaxy growth," Jpn. J. Appl. Phys., vol.37,
no.1A/B, pp.L46-L49, 1998. (2) B. Jenichen, H. T. Grahn, T. Kojima and S. Arai, "Lateral periodicity and elastic stress relaxation in GaInAsP quantum wires on InP investigated by X-ray diffractometry," J. Appl. Phys., vol.83, no.11, pp.5810-5813, June 1998. (3) T. Kojima, M. Tamura, H. Nakaya, S. Tanaka, S. Tamura and S. Arai, "GaInAsP/InP compressively strained quantum-wire lasers fabricated by electron beam lithography and 2-step organometallic vapor phase epitaxy," Jpn. J. Appl. Phys., vol.37, no.9A, pp.4792-4800, 1998. (4) T. Kojima, S. Tanaka, H. Yasumoto, H. Nakaya, S. Tamura and S. Arai, "Gain spectrum measurement of GaInAsP/InP compressively-strained quantum-wire lasers," Jpn. J. Appl. Phys., vol.37, no.11B, pp.L1386-L1389, 1998. (5) T. Kojima, H. Nakaya, S. Tanaka, H. Yasumoto, S. Tamura and S. Arai, "Temperature dependence of internal quantum efficiency of 20nm-wide GaInAsP/InP compressively strained quantum-wire lasers," Jpn. J. Appl. Phys., vol.38, no.1B, pp.585-588, 1999. International Conferences (6) S. Arai, "Nanometer scale semiconductor photonics - Low-dimensional quantum structures towards high performance lasers -," Int’l Topical Workshop on Contemporary Photonic Technologies (CPT’98), Tokyo, Wa-04, pp.99-102, Jan. 1998 (7) T. Kojima, H. Nakaya, S. Tanaka, H. Yasumoto, S. Tamura and S. Arai, "Optical gain measurement of GaInAsP/InP quantum-wire lasers," 15th Semiconductor Laser Symposium, 19, p.19, Yokohama, Mar. 1998. (8) T. Kojima, H. Nakaya, S. Tanaka, S. Tamura and S. Arai, "Evaluation of internal quantum efficiency and waveguide loss of 50nm-period GaInAsP/InP quantum-wire lasers," The 10th Int. Conf. on Indium Phosphide and Related Materials (IPRM'98), WA2-4, pp.365-368, Tsukuba, May 1998. (9) H. Nakaya, T. Kojima, S. Tanaka, S. Tamura and S. Arai, "Gain spectral characteristics of GaInAsP/InP quantum-wire lasers," The 10th Int. Conf. on Indium Phosphide and Related Materials (IPRM'98), TuP-20, pp.591-594, Tsukuba, May 1998. (10) T. Kojima, H. Nakaya, S. Tanaka, H. Yasumoto, S. Tamura and S. Arai, "Temperature dependence of internal quantum efficiency of 20nm-wide GaInAsP/InP quantum-wire lasers," Int. Symposium on Formation, Physics and Device Application of Quantum Dot Structures (QDS’98), Th2-8, p.212, Sapporo, May/June 1998. (11) S. Arai, T. Kojima, M. Madhan Raj, N. Nunoya, S. Tanaka and S. Toyoshima, "Long-wavelength lasers prepared by semiconductor microfabrication," submitted to the Pacific Rim Conference on Lasers and Electro-Optics (CLEO/Pacific Rim '99), (Invited), Seoul (Korea), Aug./Sep. 1999. |
| Meeting Reports |
| (1) T. Kojima, H. Nakaya, S. Tanaka, H. Yasumoto, S. Tamura
and S. Arai, "Fabrication of GaInAsP/InP quantum-wire lasers
and evaluation of its optical gain characteristics," 「GaInAsP/InP量子細線レーザの作製とその光学利得特性評価」
電子情報通信学会技術研究報告、光エレクトロニクス、信学技報, OPE98-39/LQE98-33, pp.25-30,
Tokyo, July 1998. (2) T. Kojima, H. Nakaya, S. Tanaka, S. Tamura and S. Arai, "Temperature dependence of threshold current density of GaInAsP/InP quantum-wire lasers," 「GaInAsP/InP量子細線レーザの発振しきい値電流の温度依存性」 Nat. Conv. Res. of Japan Soc. Appl. Phys., 29p-ZH-3, DigestV-p.1115, Hachioji, Mar. 1998. (3) H. Nakaya, T. Kojima, S. Tanaka, H. Yasumoto, S. Tamura and S. Arai, "Gain spectrum measurement of GaInAsP/InP compressively-strained quantum-wire lasers," 「GaInAsP/InP圧縮歪量子細線レーザの光利得スペクトルの測定」 Nat. Conv. Res. of Japan Soc. Appl. Phys., 29p-ZH-5, DigestV-p.1116, Hachioji, Mar. 1998. (4) S. Arai and T. Kojima, "Nano-structure fabrication using lithography and GaInAsP/InP quantum-wire lasers," 「リソグラフィーによる極微構造形成とGaInAsP/InP量子細線レーザ」電気化学会第65回大会, Nat. Conv. Rec. of the Electrochemical Soc. of Japan, (Invited) 特1H07, p.208, Meguro, Apr. 1998. (5) S. Tanaka, T. Kojima, H. Yasumoto, S. Tamura and S. Arai, "Fabrication of GaInAsP/InP compressively-strained single-quantum-well laser with AlInAs ESL," 「AlInAs ESL を有するGaInAsP/InP圧縮歪単層量子井戸レーザの作製」Nat. Conv. Res. of Japan Soc. Appl. Phys., 15a-A-9, DigestV-p.993, Higashi-Hiroshima, Sep. 1998. (6) T. Kojima, S. Tanaka, H. Yasumoto, S. Tamura and S. Arai, "Regrowth layer dependence of anisotropic polarization properties of PL from GaInAsP/InP quantum-wire structure," 「GaInAsP/InP量子細線構造のPL偏光特性の埋め込み層依存性」Nat. Conv. Res. of Japan Soc. Appl. Phys., 15p-YG-1, DigestV-p.1236, Higashi-Hiroshima, Sep. 1998. (7) H. Yasumoto, T. Kojima, N. Nunoya, S. Tanaka and S. Arai, "Temperature dependences of 1.55mm GaInAsP/InP compressively-strained MQW lasers," 「1.55mm波長GaInAsP/InP圧縮歪多重量子井戸レーザの温度特性」 Nat. Conv. Res. of Japan Soc. Appl. Phys., 28a-B-9, Noda, Mar. 1999. (8) S. Tanaka, T. Kojima, H. Yasumoto, M. Morshed, S. Tamura and S. Arai, "Fabrication of 1.55mm GaInAsP/AlGaInAs compressively-strained quantum-wire laser," 「1.55mm帯GaInAsP/AlGaInAs圧縮歪量子細線レーザの作製」 Nat. Conv. Res. of Japan Soc. Appl. Phys., 28p-B-8, Noda, Mar. 1999. (9) N. Nunoya, M. Nakamura, T. Kojima, S. Tanaka, I. Fukushi, S. Tamura and S. Arai, "GaInAsP/InP multiple-layered quantum-wire lasers fabricated by CH4/H2-RIE/ OMVPE regrowth," 「CH4/H2-RIE/OMVPE再成長法によるGaInAsP/InP多層量子細線レーザ」 Nat. Conv. Res. of Japan Soc. Appl. Phys., 29p-ZL-19, Noda, Mar. 1999. |
| Domestic Conferences |
| (1) S. Tanaka, T. Kojima, H. Nakaya, S. Tamura and S. Arai, "Regrowth temperature dependence of GaInAsP/InP single-layer quantum-well lasers," 「GaInAsP/InP単層量子井戸レーザの埋め込み成長温度依存性」 Nat. Conv. Res. of Japan Soc. Appl. Phys., 29p-ZH-2, DigestV-p.1115, Hachioji, Mar. 1998. |
| New Types of Semiconductor Lasers |
| Journal Papers |
| (1) M. Madhan Raj, K. Numata, S. Toyoshima, and S. Arai, “GaInAsP/InP Multiple Short Cavity Laser with l/4-Air Gap/ Semiconductor Bragg Reflectors,” Jpn. J. Appl. Phys., vol.37, pp.L1461-L1464, 1998. |
| International Conferences |
| (1) M. Madhan Raj, K. Numata, S. Toyoshima, H. Nakaya, and
S. Arai, “Realization of Multiple Cavity Laser with l/4-Air
Gap/Semiconductor Reflectors,” Third Optoelectronics and Communication
Conference (OECC’98), Chiba (Japan), 13B2-3, pp.44-45, July,
1998. (2) M. Madhan Raj, S. Toyoshima and S. Arai, ”Multiple Microcavity Laser with Benzocyclobutene(BCB)/Semiconductor High Reflective mirrors fabricated by CH4/H2-RIE Dry Etching,” 16th Semiconductor Laser Symposium, Yokohama, 3, March, 1999. (3) N. Nunoya, M. Nakamura, T. Kojima, S. Tanaka, S. Tamura and S. Arai, “Low threshold current density (330A/cm2) operation of 1.55mm GaInAsP/InP MQW-DFB lasers with separated periodic active regions,” 16th Semiconductor Laser Symposium, Yokohama, 3, March, 1999. (4) M. Madhan Raj, S. Toyoshima, and S. Arai, “Multiple Micro-Cavity Laser with l/4-Wide Deep Grooves Buried with Benzocyclobutene,” The 11th Int. Conf. on Indium Phosphide and Related Materials (IPRM's), May, 1999. (5) N. Nunoya, M. Nakamura, S. Tanaka, H. Yasumoto, I. Fukushi, S. Tamura and S. Arai, "Low damage GaInAsP/InP nano-Structures by CH4/H2 reactive ion etching and its application to low threshold gain-coupled DFB lasers," The 11th Int. Conf. on Indium Phosphide and Related Materials (IPRM'99), May, 1999. |
| Domestic Conferences |
| (1) M. Madhan Raj, K. Numata, S. Toyoshima, S. Peng, Y. Miyamoto,
and S. Arai, "Application of Benzocyclobutene (BCB) Polymer
to Active Opto-electronics Devices," 「ベンゾシクロブテン(BCB)の動的光デバイスへの応用」Nat.
Conv. Res. of Japan Soc. Appl. Phys., (30a-ZH-9), Tokyo, March
1998. (2) K. Numata, M. Madhan Raj, S. Toyoshima, H. Nakaya, and S. Arai, "Fabrication of Multiple Microcavity Laser having Air/Semiconductor-Bragg Reflective Mirrors," 「空気/半導体-ブラッグ反射鏡を有する多重極微共振器半導体レーザの試作」Nat. Conv. Res. of Japan Soc. Appl. Phys., (30a-ZH-8), Tokyo, March 1998. (3) M. Madhan Raj, S. Toyoshima, Y. Saka, T. Kojima, and S. Arai, “Analysis of threshold current of a high Optical Confinement semiconductor Laser”「高屈折率差光閉じ込め半導体レーザのしきい値電流解析」Nat. Conv. Res. of Japan Society of Applied Phys., (15a-A-19), Hiroshima, September 1998. (4) S. Toyoshima, M. Madhan Raj, H. Yasumoto, and S. Arai, “Fabrication of Multiple Microcavity Laser using CH4/H2-RIE Dry etching”「CH4/H2ドライエッチングを用いた多重極微共振器半導体レーザの試作」 Nat. Conv. Res. of Japan Society of Applied Phys., (15a-A-25), Hiroshima, September 1998. (5) M. Madhan Raj, S. Toyoshima, A. Matsutani, M. Oyake, Y. Saka, and S. Arai, “Measurement of CH4/H2-RIE Etched Mirror Roughness and Its Application to Semiconductor Lasers”, 「CH4/H2-RIEエッチトミラーのラフネス測定と半導体レーザへの応用」Nat. Conv. Res. of Japan Society of Applied Phys., (28p-ZC-11),Tokyo, March 1999 (6) S. Toyoshima, M. Madhan Raj, M. Oyake and S. Arai, ”Multiple Microcavity Laser with BCB/Semiconductor Reflectors by CH4/H2-RIE Dry Etching” 「CH4/H2ドライエッチングを用いたBCB/半導体反射鏡を有する多重極微共振器レーザ」Nat. Conv. Res. of Japan Society of Applied Phys., (28p-B-4)Tokyo, March 1999. (7) N. Nunoya, M. Nakamura, S. Tanaka, H. Yasumoto, S. Tamura and S. Arai, “ GaInAsP/InP Lasers Fabricated by CH4/H2-RIE and OMVPE Regrowth,” 「CH4/H2-RIEとOMVPE 埋め込み再成長によるGaInAsP/InP DFBレーザの作製」Nat. Conv. Rec. of Japan Soc. Appl. Phys., 28p-B-10, Chiba, March 1999. |
| Semiconductor Photonic Devices |
| Domestic Conferences |
| (1) T. Shimizu, S. Yamazaki, S. Tamura and S. Arai, "Waveguide Width Dependence of Crosstalk for MQW Directional-Coupler type All-Optical Switch." 「MQW方向性結合型全光スイッチにおけるクロストークの導波路幅依存性」Nat. Conv. Rec. of Japan Soc. Appl. Phys., 29a-SZL-3, DigestV-p.1130, Tokyo, Mar. 1998. |
| Processing
for Nanometer Structures |
| Journal Papers |
(1) M. Tamura, T. Ando, N. Nunoya, S. Tamura, S. Arai and G. U. Bacher, "Estimation of Sidewall Nonradiative Recombination in GaInAsP/InP Wire Structures Fabricated by Low Energy Electron-Cyclotron-Resonance Reactive-Ion-Beam-Etching," Jpn. J. Appl. Phys., vol.37, no. 6A, pp.3576-3584, 1998. (2) T. Kojima, X. Y. Jia, Y. Hayafune, S. Tamura, M. Watanabe and S. Arai, "Size Fluctuation of 50nm Periodic GaInAsP/InP Wire Structure by Electron Beam Lithography and Wet Chemical Etching," Jpn. J. Appl. Phys., vol. 37, no. 11, pp. 5961-5962, 1998. (3) M. Tamura, T. Kojima, T. Ando, N. Nunoya, S. Tamura and S. Arai, "Sidewall Recombination Velocity in GaInAsP/InP Quantum-Wire Lasers with Wire-like Active Region Fabricated by Wet-Chemical Etching and Organo-Metallic Vapor-Phase-Epitaxial Regrowth," Jpn. J. Appl. Phys., vol. 37, no. 12A, pp. 6569-6574, 1998. |
| Domestic Conferences |
| (1) T. Shimizu, S. Yamazaki, S. Tamura and S. Arai, "Waveguide Width Dependence of Crosstalk for MQW Directional-Coupler type All-Optical Switch." 「MQW方向性結合型全光スイッチにおけるクロストークの導波路幅依存性」 Nat. Conv. Rec. of Japan Soc. Appl. Phys., (29a-SZL-3), Tokyo, Mar. 1998. (2) M. Tamura, T. Ando, N. Nunoya, S. Tamura and S. Arai, "Estimation Sidewall Recombination Velocity of GaInAsP/InP Multiple Wire Laser from Its Spontaneous Emission Efficiency," 「GaInAsP/InP細線レーザの自然放出光効率からの表面再結合速度の見積もり」Nat. Conv. Rec. of Japan Soc. Appl. Phys., (29p-ZH-4), Tokyo, Mar. 1998. (3) N. Nunoya, M. Nakamura and S. Arai, "Depth Profile of Damage Induced by ECR-RIBE with Cl2 gas," 「塩素ガスECR-RIBEによるInP系結晶底面方向への損傷分布のPL評価」 Nat. Conv. Rec. of Japan Soc. Appl. Phys., (17p-P12-2), Hiroshima, Sep. 1998. (4) M. Nakamura, N. Nunoya, I. Fukushi, S. Tamura and S. Arai, “CH4/H2 Dry Etching/OMVPE Regrowth for GaInAsP/InP Low-Dimensional Quantum-Well Structure,” 「GaInAsP/InP 低次元量子井戸構造のためのCH4/H2ドライエッチング/埋め込み再成長」 Nat. Conv. Rec. of Japan Soc. Appl. Phys., 28-p-ZC-9, Chiba, Mar. 1998. |
