List of Report
Quantum-Film, Quantum-Wire, and Quantum-Box Lasers
Journal Papers
(1) T. Kojima, H. Nakaya, S. Tanaka, H. Yasumoto, S. Tamura and S. Arai, “Temperature Dependence of Internal Quantum Efficiency of 20nm-Wide GaInAsP/InP Compressively Strained Quantum-Wire Lasers,” Jpn. J. Appl. Phys., vol.38, no.1B pp.585-588, 1999.

(2) D. Lubbert, B. Jenichen, T. Baumbach, H. T. Grahn, G. Paris, A. Mazuelas, T. Kojima and S. Arai, “Elastic Stress Relaxation in GaInAsP Quantum Wires on InP,” J. Phys. D: Appl. Phys., vol.32, pp.A21-A25, 1999.

(3) N. Nunoya, M. Nakamura, H. Yasumoto, S. Tamura and S. Arai, “Low Threshold GaInAsP/InP Distributed Feedback Lasers with Periodic Wire Active Regions Fabricated by CH4/H2 Reactive Ion Etching,” Jpn. J. Appl. Phys., vol.38, no.11B, pp.L1323-L1326, 1999.

(4) T. Kojima, S. Tanaka, H. Yasumoto, S. Tamura and S. Arai, “Evaluation of Optical Gain Properties of GaInAsP/InP Compressively Strained Quantum-Wire Lasers,” Jpn. J. Appl. Phys., vol.38, no.11A, pp. 6327-6334, 1999.
　
International Conferences
(1) N. Nunoya, M. Nakamura, T. Kojima, S. Tanaka, S. Tamura and S. Arai, “Low Threshold Current Density (330A/cm2) Operation of 1.55mm GaInAsP/InP MQW-DFB Lasers with Separated Periodic Active Regions,” 16th Semiconductor Laser Symposium (29th precision & Intelligence Lab. Symposium), 17, p.17, Yokohama (Japan), Mar. 1999.

(2) N. Nunoya, M. Nakamura, S. Tanaka, H. Yasumoto, I. Fukushi, S. Tamura and S. Arai, “Low Damage GaInAsP/InP Nano-Structures by CH4/H2 Reactive Ion Etching and Its Application to Low Threshold Gain-Coupled DFB Lasers,” The 11th Int. Conf. on Indium Phosphide and Related Materials (IPRM'99), TuB4-1, pp.349-352, Davos (Switzerland), May 1999.

(3) N. Nunoya, M. Nakamura, T. Kojima, S. Tanaka, H. Yasumoto, S. Tamura and S. Arai, “GaInAsP/InP Distributed Feedback Lasers with Periodic Wire-like Active Region Fabricated by CH4/H2 Reactive-Ion-Etching,” The 3rd Pacific Rim Conf. on Lasers and Electro-Optics (CLEO/PR'99), FU3, Seoul (Korea), pp.1291-1292, Sep. 1999.

(4) S. Arai, T. Kojima, M. M. Raj, N. Nunoya, S. Tanaka and S. Toyoshima, “Long-Wavelength Lasers Prepared by Semiconductor Microfabrication,” The 3rd Pacific Rim Conf. on Lasers and Electro-Optics (CLEO/PR'99), FU4(Invited), pp.1293-1294, Seoul (Korea), Aug./Sep. 1999.

(5) N. Nunoya, M. Nakamura, H. Yasumoto, S. Tamura and S. Arai, “GaInAsP/InP Multiple Layered Quantum-Wire Lasers Fabricated by CH4/H2 Reactive-Ion-Etching,” The 31st Int. Conf. on Solid State Devices and Materials (SSDM'99), E-5-3, pp.276-277, Tokyo (Japan), Sep. 1999.

(6) S. Arai, T. Kojima, N. Nunoya, M. Nakamura, H. Yasumoto, M. Morshed and S. Tamura, “GaInAsP/InP Quantum-Wire Lasers,” The 4th Optoelectronics and Communications Conf. (OECC'99), C6S1-1(Invited), pp.1294-1297, Beijing (China), Oct. 1999.

(7) M. Nakamura, N. Nunoya, H. Yasumoto, S Tamura and S. Arai, “GaInAsP/InP High Index Coupled (ki = 290cm-1) DFB Laser with Periodic Wire-like Active Regions; The 4th Optoelectronics and Communications Conf. (OECC'99), C6S5-4, pp.1454-1455. Beijing (China), Oct. 1999.

(8) S. Arai, N. Nunoya, M. Nakamura, H. Yasumoto and S. Tamura, “1.5mm Wavelength GaInAsP/InP Low Threshold Current Lasers by Low-Damage CH4/H2-RIE and OMVPE Regrowth,” Int. Symposium on Ultra-Parallel Optoelectronics (30th Precision & Intelligence Lab. Symposium), C-2, pp.27-28, Kawasaki (Japan), Mar. 2000.

(9) N. Nunoya, M. Nakamura, H. Yasumoto, M. Morshed, K. Fukuda, S. Tamura, and S. Arai, “1.5mm GaInAsP/InP Double-Quantum-Well DFB Lasers with Deeply Etched Active Regions,” to be presented at the 12th Int. Conf. on Indium Phosphide and Related Materials (IPRM'00), TuA2, Williamsburg (Virginia, USA), May 2000.

(10) H. Yasumoto, N. Nunoya, H. Midorikawa, S. Tamura and S. Arai, “1.5mm Wavelength Strain-Compensated GaInAsP/InP Wirelike Laser by CH4/H2 Reactive Ion Etching,” to be presented at the 12th Int. Conf. on Indium Phosphide and Related Materials (IPRM'00), WA3, Williamsburg (Virginia, USA), May 2000.
　
Meeting Reports
(1) N. Nunoya, M. Nakamura, T. Kojima, S. Tanaka, H. Yasumoto S. Tamura and S. Arai, “GaInAsP/InP Multiple Quantum Wire Lasers Fabricated by CH4/H2 Dry Etching and Regrowth,” ｢CH4/H2ドライエッチングと埋め込み再成長によるGaInAsP/InP多層量子細線レーザ｣ Technical Report of IEICE, OPE99-44, LQE99-38, pp.57-62, Tokyo (Japan), July 1999.
　
Domestic Conferences
(1) H. Yasumoto, T. Kojima, N. Nunoya, S. Tanaka and S. Arai, “Temperature Dependences of 1.55mm GaInAsP/InP Compressively-Strained MQW Lasers,” 「1.55µm波長帯GaInAsP/InP圧縮歪多重量子井戸レーザの温度特性」 Nat. Conv. Res. of Japan Soc. Appl. Phys., 28a-B-9, Digest III -p.1185, Noda, Mar. 1999.

(2) S. Tanaka, T. Kojima, H. Yasumoto, M. Morshed, S. Tamura and S. Arai, “Fabrication of 1.55mm GaInAsP/AlGaInAs Compressively-Straned Quantum-Wire Laser,” ｢1.55µm帯GaInAsP/AlGaInAs圧縮歪量子細線レーザの作製｣ Nat. Conv. Res. of Japan Soc. Appl. Phys., 28p-B-8, Digest III -p.1189, Noda, Mar. 1999.

(3) N. Nunoya, M. Nakamura, S. Tanaka, H. Yasumoto, S. Tamura and S. Arai, “GaInAsP/InP DFB Lasers Fabricated by CH4/H2-RIE and OMVPE Regrowth,” ｢CH4/H2-RIEとOMVPE 埋め込み再成長によるGaInAsP/InP DFBレーザの作製｣ Nat. Conv. Res. of Japan Soc. Appl. Phys., 28p-B-10, Digest III -p.1189, Noda, Mar. 1999.

(4) N. Nunoya, M. Nakamura, T. Kojima, S. Tanaka, I. Fukushi, S. Tamura and S. Arai, “GaInAsP/InP Multiple-Layered Quantum Wire Lasers Fabricated by CH4/H2-RIE/ OMVPE Regrowth,” ｢CH4/H2-RIE/OMVPE再成長法によるGaInAsP/InP多層量子細線レーザ｣ Nat. Conv. Res. of Japan Soc. Appl. Phys., 29p-ZL-19, Digest III -p.1459, Noda, Mar. 1999.

(5) M. Nakamura, N. Nunoya, H. Yasumoto, S. Tamura and S. Arai, “Characteristics of High Index Coupled DFB Laser with Periodic Wire-like Active Region,” ｢強屈折率結合を有する活性層分離型DFBレーザの特性｣ Nat. Conv. Res. of Japan Soc. Appl. Phys., 3a-ZE-42, Digest III -p.980, Kobe, Sep. 1999.

(6) N. Nunoya, M. Nakamura, M. Morshed, H. Yasumoto, S. Tamura and S. Arai, “GaInAsP/InP Multiple Layered Wire Structure Laser,” ｢GaInAsP/InP多層細線構造レーザの試作｣ Nat. Conv. Res. of Japan Soc. Appl. Phys., 3a-ZE-43, Digest III -p.981, Kobe, Sep. 1999.

(7) M. Nakamura, N. Nunoya, M. Morshed, H. Yasumoto, S. Tamura and S. Arai, “Wire Wudtg Dependences of Threshold Current for 2QW DFB Lasers with Wirelike Active Region,” ｢活性層分離型2層DFBレーザのしきい値電流の細線幅依存性｣ Nat. Conv. Res. of Japan Soc. Appl. Phys., 30p-N-1, Tokyo, Mar. 2000.

(8) N. Nunoya, M. Nakamura, K. Fukuda, M. Morshed, S. Tamura and S. Arai, “Submilliampere Operation of BH-DFB Laser with Wirelike Active Region,” ｢活性層分離型DFBレーザのサブミリアンペア動作｣ Nat. Conv. Res. of Japan Soc. Appl. Phys., 30p-N-2, Tokyo, Mar. 2000.

(9) H. Yasumoto, N. Nunoya, H. Midorikawa, S. Tamura and S. Arai, “Low Threshold Operation of Strain-Compensated GaInAsP/InP Multiple-Layered Wire Laser,” ｢GaInAsP/InP歪補償多層細線レーザの低しきい値動作｣ Nat. Conv. Res. of Japan Soc. Appl. Phys., 30p-N-11, Tokyo, Mar. 2000.
　
New Types of Semiconductor Lasers for Photonic Integration
Journal Papers
(1) M. Madhan Raj, S. Toyoshima and S. Arai, “Multiple Micro-Cavity Laser with Benzocyclobutene/Semiconductor High Reflective Mirrors Fabricated by CH4/H2-Reactive Ion Etching,” Jpn. J. Appl. Phys., vol.38, pp.L811-L814, 1999.

(2) M. Madhan Raj, J. Wiedmann, Y. Saka, H. Yasumoto and S. Arai, “1.5 CH4/H2m Wavelength DBR Lasers Consisting of 3l/4-Semiconductor and 3l/4-Groove Buried with Benzocyclobutene,” Elec. Lett., vol.35, pp.1335-1337, 1999.

(3) M. Madhan Raj, Y. Saka, J. Wiedmann, H. Yasumoto and S. Arai, “Continuous Wave Operation of 1.55 mm GaInAsP/InP Laser with Semiconductor /Benzocyclobutene Distributed Bragg Reflector,” Jpn. J. Appl. Phys., vol.38, pp.L1240-L1242, 1999.
　
International Conferences
(1) M. Madhan Raj, S. Toyoshima and S. Arai, “Multiple Micro-cavity Laser with l/4-Wide Deep Grooves Buried with Benzocyclobutene,” The 11th Int. Conf. on Indium Phosphide and Related Materials (IPRM'99), TuB1-3, pp.207-210, Davos (Switzerland), May 1999

(2) M. Madhan Raj, J. Wiedmann, Y. Saka, H. Yasumoto, and S. Arai, “High Reflectivity Laser Facets by Deeply Etched DBR Buried with Benzocyclobutene,” The 11th Int. Conf. on Indium Phosphide and Related Materials (IPRM'99), PDA-3 (Post Deadline Papers), pp.10-11, Davos (Switzerland), May 1999.

(3) M. Madhan Raj, J. Wiedmann, Y. Saka, K. Ebihara, K. Matsui and S. Arai, “Highly Uniform 1.55mm Wavelength Lasers with Deeply Etched Semiconductor/ Benzocyclobutene DBR,” to be presented at the 12th Int. Conf. on Indium Phosphide and Related Materials (IPRM'00), WP2, Williamsburg (US), May 2000.

(4) M. Madhan Raj, S. Toyoshima and S. Arai, ”Multiple Microcavity Laser with Benzocyclobutene(BCB)/Semiconductor High Reflective Mirrors Fabricated by CH4/H2-RIE Dry Etching,” 16th Semiconductor Laser Symposium, 5, pp.5, Yokohama, March 1999.

(5) M. Madhan RAJ, Y. Saka, J. Wiedmann, S. Tamura and S. Arai, ”Low Threshold 1.5 mm Wavelength GaInAsP/InP Lasers with Semiconductor/Benzocyclobutene DBR Structure”, International Symposium on Ultra-Parallel Optoelectronics, P7, pp.97-98, Kawasaki (Japan), February 2000.
　
Domestic Conferences
(1) M. Madhan Raj, S. Toyoshima, A. Matsutani, M. Oyake, Y. Saka and S. Arai, “Measurement of CH4/H2-RIE Etched Mirror Roughness and Its Application to Semiconductor Lasers,” 「CH4/H2-RIEエッチトミラーのラフネス測定と半導体レーザへの応用」 Nat. Conv. Res. of Japan Society of Applied Phys., (28p-ZC-11), Tokyo, March 1999.

(2) S. Toyoshima, M. Madhan Raj, M. Oyake and S. Arai, ”Multiple Microcavity Laser with BCB/Semiconductor Reflectors by CH4/H2-RIE Dry Etching,” 「CH4/H2ドライエッチングを用いたBCB/半導体反射鏡を有する多重極微共振器レーザ」 Nat. Conv. Res. of Japan Society of Applied Phys., (28p-B-4), Tokyo, March 1999.

(3) Y. Saka, M. Madhan Raj, J. Wiedmann, H. Yasumoto and S. Arai, ”Room Temperature CW Operation of 1.54mm DBR Laser with BCB /Semiconductor Reflectors,” 「BCB/半導体反射鏡を有する1.54mmDBRレーザの室温CW動作」Nat. Conv. Res. of Japan Society of Applied Phys., (3a-ZE-40), Kobe, September 1999.

(4) J. Wiedmann, M. Madhan Raj, Y. Saka, H. Yasumoto and S. Arai, ”Evaluation of Reflectivity of Deeply Etched Semiconductor/BCB DBR Structure Lasers,” ” 「半導体/BCB DBR構造レーザーの反射率評価」Nat. Conv. Res. of Japan Society of Applied Phys., (3a-ZE-41), Kobe, September 1999.

(5) M. Madhan Raj, Y. Saka, K. Ebihara and S. Arai, “Low Threshold and High Efficiency Operation of 1.5mm Wavelength Semiconductor/BCB DBR Lasers,” 「1.5mm波長帯半導体/BCB DBRレーザの低しきい値・高効率動作」Nat. Conv. Res. of Japan Society of Applied Phys., (30p-N-8), Tokyo, March 2000.

(6) J. Wiedmann, M. Madhan Raj, Y. Saka, S. Tamura and S. Arai, “Single-Mode Operation of Deeply Etched DBR Lasers with Multiple-Cavities,” 「多重共振器を有するDBRレーザの単一波長動作」Nat. Conv. Res. of Japan Society of Applied Phys., (30p-N-9), Tokyo, March 2000.

(7) Y. Saka, K. Ebihara, M. Madhan Raj, J. Wiedmann and S. Arai, “Double Sided DBR Laser with BCB/Semiconductor Bragg Reflector,” 「両端にBCB/半導体反射鏡を有するDBRレーザ」Nat. Conv. Res. of Japan Society of Applied Phys., (30p-N-10), Tokyo, March 2000.
　
Processing for Nanometer Structures
Journal Papers
(1) N. Nunoya, M. Nakamura, M. Tamura and S. Arai, “Characterization of Etching Damage in CH4/H2-Reactive-Ion-Etching of GaInAs/InP Heterostructure,” Jpn. J. Appl. Phys., vol.38, no.12A, pp.6942-6946, 1999.
　
Domestic Conferences

(1) M. Nakamura, N. Nunoya, I. Fukushi, S. Tamura and S. Arai, “CH4/H2 Dry Etching/ OMVPE Regrowth for GaInAsP/InP Low-Dimensional Quantum-Well Structures,” ｢GaInAsP/InP 低次元量子井戸構造のためのCH4/H2ドライエッチング／埋め込み再成長｣ Nat. Conv. Res. of Japan Soc. Appl. Phys., 28p-ZC-9, Digest III -p.1189, Noda, Mar. 1999.