東京工業大学荒井滋久/西山伸彦研究室

List of Report

Low Dimensional Quantum Structure Lasers

Journal Papers

(1) M. Nakamura, N. Nunoya, H. Yasumoto, M. Morshed, K. Fukuda, S. Tamura and S. Arai, “Very Low Threshold Current Density Operation of 1.5 mm DFB Lasers with Wire-Like Active Regions,” Electron. Lett., vol. 36, no. 7, pp.639-640, Apr. 2000.

(2) N. Nunoya, M. Nakamura, H. Yasumoto, S. Tamura and S. Arai, “GaInAsP/InP Multiple-Layered Quantum-Wire Lasers Fabricated by CH₄/H₂ Reactive-Ion-Etching,” Jpn. J. Appl. Phys., vol. 39, no. 6A, pp.3410-3415, June 2000.

(3) N. Nunoya, M. Nakamura, H. Yasumoto, M. Morshed, K. Fukuda, S. Tamura and S. Arai, “Sub-Milliampere Operation of 1.55mm Wavelength High Index-Coupled Buried Heterostructure Distributed Feedback Lasers,” Electron. Lett., vol. 36, no. 14, pp. 1213-1214, July 2000.

(4) N. Nunoya, H. Yasumoto, H. Midorikawa, S. Tamura and S. Arai, “Low Threshold Current Density Operation of GaInAsP/InP Lasers with Strain-Compensated Multiple-Layered Wirelike Active Regions,” Jpn. J. Appl. Phys., vol. 39, no. 10B, pp. L1042-L1045, Oct. 2000.

(5) N. Nunoya, M. Nakamura, M. Morshed, S. Tamura and S. Arai, “High-Performance 1.55mm Wavelength GaInAsP/InP Distributed Feedback Lasers with Wirelike Active Regions,” to be published in IEEE J. Select. Topics in Quantum Electron, 2001.

Review Paper

(1) Y. Suematsu and S. Arai, “Single-Mode Semiconductor Lasers for Long-Wavelength Optical Fiber Communications and Dynamics of Semiconductor Lasers,” IEEE J. Select. Topics in Quantum Electron, vol. 6, no. 6, pp. 1436-1449, Nov./Dec. 2000.

International Conferences

(1) S. Arai, N. Nunoya, M. Nakamura, H. Yasumoto and S. Arai, “1.5mm Wavelength GaInAsP/InP Low Threshold Current Lasers by Low-Damage CH₄/H₂-RIE and OMVPE Regrowth,” Int. Symposium on Ultra-Parallel Optoelectronics (30th Precision & Intelligence Lab. Symposium), C-2, pp.27-28, Kawasaki (Japan), Mar. 2000.

(2) N. Nunoya, M. Nakamura, H. Yasumoto, M. Morshed, K. Fukuda, S. Tamura and S. Arai, “1.5mm GaInAsP/InP Double-Quantum-Well DFB Lasers with Deeply Etched Active Regions,” The 12th Int’l Conf. on Indium Phosphide and Related Materials (IPRM’2000), TuA2.3, pp. 270-273, Williamsburg (USA), May 2000.

(3) H. Yasumoto, N. Nunoya, H. Midorikawa, S. Tamura and S. Arai, “1.5mm Wavelength Strain-Compensated GaInAsP/InP Wirelike Laser by CH₄/H₂ Reactive Ion Etching,” The 12th Int. Conf. on Indium Phosphide and Related Materials (IPRM’2000), WA3.2, pp. 498-501, Williamsburg (USA), May 2000.

(4) N. Nunoya, M. Nakamura, H. Yasumoto, M. Morshed, K. Fukuda, S. Tamura and S. Arai, “Submilliampere Operation of 1.55mm GaInAsP/InP DFB Lasers with Deeply Etched Active Regions,” The 5th Optoelectron. and Commun. Conf. (OECC’2000), 11C1-2, pp. 46-47, Chiba (Japan), July 2000.

(5) S. Arai, “Low-Damage Fabrication of GaInAsP/InP Fine-Structures for High Performance Lasers,” 4th International Workshop of the Canadian - European Research Initiative on Nanostructures (CERION), (Invited), Wurzburg Univ. (Germany), July 2000

(6) S. Arai, H. Yasumoto, N. Nunoya, H. Midorikawa, and S. Tamura, “Low-Damage GaInAsP/InP Fine Structure Lasers by CH₄/H₂-RIE and OMVPE Regrowth,” Int. Symposium on Formation, Physics and Device Application of Quantum Dot Structures (QDS’00), Th1-13, p. 206, Sapporo (Japan), Sept. 2000.

(7) N. Nunoya, M. Morshed, M. Nakamura, S. Tamura and S. Arai, “High Single-Mode Yield 1.55mm GaInAsP/InP BH-DFB Lasers with Periodic Wirelike Active Regions,” The 17th IEEE Int’l Semicon. Laser Conf., TuB1, pp. 45-46, Monterey (USA), Sept. 2000.

(8) N. Nunoya, M. Morshed, S. Tamura and S. Arai, “High Performance Operation of Gain-Matched DFB Lasers,” The 7th Int’l Symposium on Quantum Effect Electronics, 7, pp.25-28, Meguro (Japan), Nov. 2000.

(9) H. Midorikawa, N. Nunoya, K. Muranushi, S. Tamura and S. Arai, “Low-Damage Etched/Regrown Interfaces of GaInAsP/InP Wirelike Laser with Strain-Compensated MQW Structure,” to be presented in The 13th Int’l Conf. on Indium Phosphide and Related Materials (IPRM’01), TuB2-2, Nara (Japan), May 2001.

Domestic Conferences

(1) H. Yasumoto, N. Nunoya, H. Midorikawa, S. Tamura and S. Arai, “Low Threshold Operation of Strain-Compensated GaInAsP/InP Multiple-Layered Wire Laser,” ｢GaInAsP/InP歪補償多層細線レーザの低しきい値動作｣ Nat. Conv. Res. of Japan Soc. Appl. Phys., 30a-N-11, Digest III -p.1159, Tokyo, Mar. 2000.

(2) M. Nakamura, N. Nunoya, M. Morshed, H. Yasumoto, S. Tamura and S. Arai, “Wire Width Dependences of Threshold Current for 2QW DFB Lasers with Wirelike Active Region,” ｢活性層分離型2層DFBレーザのしきい値電流の細線幅依存性｣ Nat. Conv. Res. of Japan Soc. Appl. Phys., 30p-N-1, Digest III -p.1159, Tokyo, Mar. 2000.

(3) N. Nunoya, M. Nakamura, K. Fukuda, M. Morshed, S. Tamura and S. Arai, “Submilliampere Operation of BH-DFB Laser with Wirelike Active Region,” ｢活性層分離型DFBレーザのサブミリアンペア動作｣ Nat. Conv. Res. of Japan Soc. Appl. Phys., 30p-N-2, Digest III -p.1159, Tokyo, Mar. 2000.

(4) M. Morshed, N. Nunoya and S. Arai, “Investigation of Single-Mode Characteristics of DFB Lasers with Wirelike Active Regions,” ｢活性層分離型2層DFBレーザの単一モード特性に関する検討｣ Nat. Conv. Res. of Japan Soc. Appl. Phys., 6p-R-6, Digest III -p.994, Sapporo, Sep. 2000.

(5) N, Nunoya, M. Morshed, S. Tamura and S. Arai, “Single-Mode Characteristics of GaInAsP/InP DQW BH-DFB Laser with Wirelike Active Regions,” ｢GaInAsP/InP活性層分離型2層BH-DFBレーザの単一モード特性｣ Nat. Conv. Res. of Japan Soc. Appl. Phys., 6p-R-7, Digest III -p.994, Sapporo, Sep. 2000.

(6) M. Midorikawa, N. Nunoya, K. Muranushi, S. Tamura and S. Arai, “Temperature Dependence of Spontaneous Emission Efficiency in Strain-Compensated GaInAsP/InP Wirelike Laser,” ｢GaInAsP/InP歪補償細線レーザの自然放出光効率の温度依存性｣ Nat. Conv. Res. of Japan Soc. Appl. Phys., 7a-R-6, Digest III -p.1000, Sapporo, Sep. 2000.

(7) K. Muranushi, H. Midorikawa, N. Nunoya, S. Tamura, B. Chen and S. Arai, “Temperature Dependence of Threshold Current in Strain-Compensated GaInAsP/InP Wirelike Laser,” ｢GaInAsP/InP歪補償細線レーザにおけるしきい値電流の温度特性｣ Nat. Conv. Res. of Japan Soc. Appl. Phys., 30a-ZS-1, Tokyo, Mar. 2001.

(8) H. Midorikawa, N. Nunoya, K. Nuranushi, B. Chen and S. Arai, “Threshold Reduction by Thin InP Barrier in Regrowth Process of GaInAsP/InP MQW Laser,” ｢再成長プロセスにおけるInP障壁薄層化によるGaInAsP/InP MQWレーザの低閾値動作｣ Nat. Conv. Res. of Japan Soc. Appl. Phys., 30a-ZS-2, Tokyo, Mar. 2001.

(9) M. Morshed, N. Nunoya, K. Ohira, J. Wiedmann and S. Arai, “Improvement of Single-Mode Characteristics of DFB Lasers with Gain-Matching Effect,” ｢活性層分離型DFBレーザの利得整合効果による単一モード性向上｣ Nat. Conv. Res. of Japan Soc. Appl. Phys., 30a-ZS-5, Tokyo, Mar. 2001.

(10) N. Nunoya, M. Morshed, K. Ohira, S. Tamura, B. Chen and S. Arai, “Fabrication of GaInAsP/InP Phase Shift DFB Laser with Wirelike Active Regions,” ｢GaInAsP/InP位相シフト活性層分離型DFBレーザの試作｣ Nat. Conv. Res. of Japan Soc. Appl. Phys., 30a-ZS-6, Tokyo, Mar. 2001.

New Types of Semiconductor Lasers for Photonic Integration

Journal Papers

(1) J. Wiedmann, M. M. Raj, Y. Saka, S. Tamura and S. Arai, “Singlemode Operation of Deeply Etched Coupled Cavity Laser with DBR Facet,” Electron. Lett., vol. 36, no. 14, pp.1211-1212, July 2000.

(2) M. M. Raj, N. Serizawa, J. Wiedmann and S. Arai, “Theoretical Analysis of GaInAsP/InP Multiple Micro-Cavity Laser,” Jpn. J. Appl. Phys., vol. 39, no. 10, pp.5847-5854, Oct. 2000.

(3) M. M. Raj, J. Wiedmann, Y. Saka, K. Ebihara and S. Arai, “Highly Uniform 1.5mm Wavelength Deeply Etched Semiconductor/Benzocyclobutene Distributed Bragg Reflector Lasers,” Jpn. J. Appl. Phys., vol. 39, no. 12B, pp.L1297-L1299, Dec. 2000.

(4) M. M. Raj, J. Wiedmann, S. Toyoshima, Y. Saka, K. Ebihara and S. Arai, “High-Reflectivity Semiconductor/Benzocyclobutene Bragg Reflector Mirrors for GaInAsP/InP Lasers” to be published in Jpn. J. Appl. Phys, vol.40, no. 4A, Apr. 2001.

International Conferences

(1) M. M. Raj, Y. Saka, J. Wiedmann, S. Tamura and S. Arai, “Low Threshold 1.5 mm Wavelength GaInAsP/InP Lasers with Semiconductor/Benzocyclobutene DBR Structure,” Int. Symposium on Ultra-Parallel Optoelectronics (30th Precision & Intelligence Lab. Symposium), P2, pp.97-98, Kawasaki (Japan), Mar. 2000.

(2) M. M. Raj, J. Wiedmann, Y. Saka, K. Ebihara, K. Matsui, and S. Arai, “Highly Uniform 1.55mm Wavelength Lasers with Deeply Etched semiconductor/ Benzocyclobutene DBR,” The 12th Int’l Conf. on Indium Phosphide and Related Materials (IPRM’2000), WP2.23, pp.427-430, Williamsburg (USA), May 2000.

(3) Wiedmann, M. M. Raj, Y. Saka, K. Ebihara, A. Umeshima, S. Tamura, and S. Arai, “Deeply Etched Coupled Cavity Laser with DBR Facet for Low Threshold and Single Mode Operation,” The 5th Optoelectron. and Commun. Conf. (OECC’2000), 11C1-5, pp. 52-53, Chiba (Japan), July 2000.

(4) S. Arai M. M. Raj and J. Wiedmann, “Multiple-Reflector Lasers for Photonic Integrations,” The 13th IEEE Lasers and Electro-Optics Society Meeting (LEOS’00), WM3 (Invited), pp. 502-503, Peurto Rico (USA), Nov. 2000.

(5) J. Wiedmann, K. Ebihara, H.-C. Kim, K. Matsui, S. Tamura, B. Chen and S. Arai, “Deeply Etched 1.55 mm Wavelength Distributed-Reflector Lasers with Vertical Grating,” to be presented in The 13th Int’l Conf. on Indium Phosphide and Related Materials (IPRM’01), TuA1-3, Nara (Japan), May 2001.

Meeting Reports

(1) M. M. Raj, J. Wiedmann, Y. Saka, K. Ebihara, K. Matsui, S. Tamura and S. Arai, “1.55mm Wavelength Deeply Etched Semiconductor/Benzocyclobutene DBR Lasers,” Technical Report of IEICE, OPE2000-7 (2000-05), pp. 37-42, Tokyo (Japan), May 2000.

(2) J. Wiedmann, M. M. Raj, K. Ebihara, K. Matsui, S. Tamura and S. Arai, “Design and Development of 1.55 mm Single-Mode Semiconductor Lasers Consisting of Deeply Etched Grooves Buried with Benzocyclobutene,” Technical Report of IEICE, OME2000-118, OPE2000-70 (2000-10), pp.19-24, Tokyo (Japan), Oct. 2000.

Domestic Conferences

(1) M. M. Raj, Y. Saka, K. Ebihara and S. Arai, “Low Threshold and High Efficiency Operation of 1.5µm Wavelength Semiconductor/BCB DBR Lasers,” ｢1.5mm波長帯半導体/BCB DBRレーザの低しきい値･高効率動作｣ Nat. Conv. Res. of Japan Soc. Appl. Phys., 30p-N-8, Digest III -p.1161, Tokyo, Mar.2000.

(2) J. Wiedmann, M. M. Raj, Y. Saka, S. Tamura and S. Arai, “Single-Mode Operation of Deeply Etched DBR Lasers with Multiple-Cavities,” ｢多重共振器を有するDBRレーザの単一波長動作｣ Nat. Conv. Res. of Japan Soc. Appl. Phys., 30p-N-9, Digest III -p.1162, Tokyo, Mar. 2000.

(3) Y. Saka, K. Ebihara, M. M. Raj, J. Wiedmann and S. Arai, “Double Sided DBR Laser with BCB/Semiconductor Bragg Reflector,” ｢両端にBCB/半導体反射鏡を有するDBRレーザ｣ Nat. Conv. Res. of Japan Soc. Appl. Phys., 30p-N-10, Digest III -p.1162, Tokyo, Mar. 2000.

(4) K. Ebihara, J. Wiedmann, M. M. Raj and S. Arai, “Design of Front Facet Reflector of Semiconductor/BCB DBR Lasers,” ｢短共振器半導体/BCB DBRレーザの前端面反射器の設計｣ Nat. Conv. Res. of Japan Soc. Appl. Phys., 6p-R-2, Digest III -p.993, Sapporo, Sep. 2000.

(5) J. Wiedmann, M. M. Raj, K. Ebihara, K. Matsui and S. Arai, “Deeply Etched Distributed Reflector (DR) Lasers with Vertical DFB Grating,” ｢垂直DFBグレーティングを用いた分布反射形(DR)レーザ｣ Nat. Conv. Res. of Japan Soc. Appl. Phys., 6p-R-4, Digest III -p.993, Sapporo, Sep. 2000.

(6) J. Wiedmann, K. Ebihara, M. Ohta, H.-C. Kim, B. Chen, K. Matsui, S. Tamura and S. Arai, “Low Threshold Current Operation of Distributed Reflector (DR) Lasers with Vertical Grating,” ｢垂直回折格子を用いた分布反射形(DR)レーザの低電流動作｣ Nat. Conv. Res. of Japan Soc. Appl. Phys., 30a-ZS-4, Tokyo, Mar. 2001.

(7) K. Matsui, T. Okamoto, N. Nunoya and S. Arai, “Analysis of Threshold Current of Membrane DFB Lasers with Wirelike Active Regions,” ｢半導体薄膜活性層分離型DFBレーザの閾値電流解析｣ Nat. Conv. Res. of Japan Soc. Appl. Phys., 30a-ZS-7, Tokyo, Mar. 2001.