List of Report
Low Dimensional Quantum Structure Lasers

Journal Papers

1. K. Ohira, T. Murayama, H. Yagi, S. Tamura, and S. Arai, “Low-threshold distributed reflector laser consisting of wide and narrow wirelike active regions,” IEEE Photon. Technol. Lett., vol. 17, no. 2, pp. 264-266, Feb. 2005.

2. S. Arai, H. Yagi, K. Ohira, T. Maruyama and S. Tamura, “GaInAsP/InP quantum-wire lasers and distributed reflector lasers with wirelike active regions by lithography and regrowth,” Proceedings of SPIE, vol. 5738, Novel In-Plane Semiconductor Lasers IV, pp. 303-317, Apr. 2005.

3. K. Ohira, T. Murayama, S. M. Ullah, H. Yagi, and S. Arai, “GaInAsP/InP distributed reflector laser with phase-shifted DFB and quantum-wire DBR sections,” IEICE Electronics Express, vol. 2, no. 11, pp. 356-361, Jun. 2005.

4. K. Ohira, T. Murayama, S. Tamura and S. Arai, “Low-threshold and high-efficiency operation of distributed reflector lasers with width-modulated wirelike active regions,” IEEE J. Select. Topics Quantum Electron., vol. 11, no. 5, pp. 1162-1168, Sep./Oct, 2005.

5. H. Yagi, K. Miura, Y. Nishimoto, D. Plumwongrot, K. Ohira, T. Maruyama and S. Arai, “Low-threshold-current operation of 1540 nm GaInAsP/InP distributed-feedback lasers with multiple-quantum-wire active regions,” Appl. Phys. Lett., vol. 87, no. 22, pp. 223120-1-223120-3, Nov. 2005.


International Conferences
1. S. Arai, H. Yagi, K. Ohira, T. Maruyama and S. Tamura, “GaInAsP/InP quantum-wire lasers and distributed reflector lasers with wirelike active regions by lithography and regrowth,” Photonics WEST Optoelectronics 2005, 5738-36, San Jose, Cal. (USA), Jan. 2005.

2. H. Yagi, K. Miura, D. Plumwongrot, Y. Nishimoto, K. Ohira, T. Maruyama and S. Arai, “Low threshold current 1540 nm wavelength GaInAsP/InP quantum-wire distributed-feedback lasers,” The 17th Indium Phosphide and Related Materials Conference (IPRM2005), WP-32, Glasgow (UK), May 2005.

3. K. Ohira, T. Murayama, H. Yagi, S. Tamura and S. Arai, “Low threshold current distributed-reflector laser with phase-shifted DFB and high-reflection DBR sections,” The 17th Indium Phosphide and Related Materials Conference (IPRM2005), WP-41, Glasgow (UK), May 2005.

4. T. Maruyama, D. Plumwongrot, H. Yagi, K. Miura, Y. Nishimoto and S. Arai, “Polarization anisotropic characteristics of GaInAsP/InP quantum-wire lasers - threshold current and gain spectrum-” The 17th Indium Phosphide and Related Materials Conference (IPRM2005), ThA-1-2, Glasgow (UK), May 2005.

5. H. Yagi, K. Miura, Y. Nishimoto, D. Plumwongrot, K. Ohira, T. Maruyama, and S. Arai, “GaInAsP/InP distributed-feedback lasers consisting of strain-compensated quantum-wire active regions,” The 10th Optoelectronics and Communications Conference (OECC2005), 5F1-4, Seoul (Korea), Jul. 2005.

6. J.-K. Seo, T. Ishii, T. Mizumoto, H. Yagi, D. Plumwongrot, and S. Arai, “Intensity-dependent refractive index changes below bandgap in quantum well and quantum wire GaInAsP waveguides,” The 10th Optoelectronics and Communications Conference (OECC2005), 8E1-1, Seoul (Korea), Jul. 2005.

7. H. Yagi, K. Miura, Y. Nishimoto, D. Plumwongrot, T. Maruyama and S. Arai, “Low threshold current density operation of GaInAsP/InP DFB lasers consisting of quantum-wire active regions,” The Pacific Rim Conference on Lasers and Electro Optics/International Quantum Electronics Conference (CLEO-PR/IQEC 2005), CTuJ1-4, p. 61, Tokyo (Japan), Jul. 2005..

8. D. Plumwongrot, T. Maruyama, A. Haque, H. Yagi, K. Miura, Y. Nishimoto and S. Arai, “In-plane spontaneous emission anisotropy in GaInAsP/InP strain-compensated quantum-wire structures,” The Pacific Rim Conference on Lasers and Electro Optics/International Quantum Electronics Conference (CLEO-PR/IQEC 2005), JWAB3-P8, p. 790, Tokyo (Japan), Jul. 2005.

9. Y. Nishimoto, K. Miura, H. Yagi, D. Plumwongrot, K. Ohira, T. Maruyama, and S. Arai, “High T0 operation of 1590 nm GaInAsP/InP quantum-wire DFB lasers by Bragg wavelength detuning,” to be presented at The 18th Indium Phosphide and Related Materials Conference (IPRM2006), TuA1-5, Princeton (USA), May. 2006.

10. S. M. Ullah, S.-H. Lee, R. Suemitsu, K. Ohira, and S. Arai, “Improved performance of distributed-reflector laser with antireflection coating,” to be presented at The 18th Indium Phosphide and Related Materials Conference (IPRM2006), WP-25, Princeton (USA), May. 2006

Meeting Reports

1. T. Maruyama, D. Plumwongrot, H. Yagi, K. Miura, Y. Nishimito, S. Arai: “Anisotropic gain of GaInAsP/InP strained quantum-wire laser,” 「GaInAsP/InP歪量子細線レーザの利得異方性」, Technical Report of IEICE,, OPE2005-17/LQE2005-16 (2005-06), pp.15-18, Tokyo, Jun. 2005.

2. H. Yagi, K. Miura, Y. Nishimito, D. Plumwongrot, K. Ohira, T. Maruyama, S. Arai: “Low threshold current operation of 1540nm wavelength GaInAsP/InP strain-compensated quantum-wire DFB lasers,” 「1540nm 波長帯GaInAsP/InP 歪補償量子細線DFBレーザの低しきい値電流動作」, Technical Report of IEICE, OPE2005-18, LQE2005-17 (2005-06), pp. 19-22, Tokyo, Jun. 2005.

3. K. Miura, D. Plumwongrot, Y. Nishimito, K. Ohira, H. Yagi, T. Maruyama, S. Arai: “Low-threshold strain-compensated quantum-wire DFB lasers by low-damage fabrication processes of GaInAsP/InP ultra-fine structures,” 「GaInAsP/InP極微構造の低損傷形成による低電流歪補償量子細線DFBレーザ」, Technical Report of IEICE, LQE2005-122 (2005-12), pp. 41-44, Tokyo, Dec. 2005

Domestic Conferences

1. K. Ohira, T. Murayama, S. M. Ullah, H. Yagi, S. Tamura and S. Arai, “Integration technique by using lateral quantum confinement effect in quantum wires and its application to lasers for optical communication,” 「量子細線活性層の横方向量子閉じ込めを用いた集積法とその光通信用レーザへの応用」, The 52nd Spring Meeting, 2005; The Japan Society of Applied Physics and Related Societies, 29a-ZH-1, Saitama, Mar. 2005.

2. K. Miura, H. Yagi, Y. Nishimoto, D. Plumwongrot, K. Ohira, T. Maruyama and S. Arai, “Room temperature-continuous wave operation of 1540 nm wavelength GaInAsP/InP strain-compensated quantum-wire DFB lasers,” 「1540 nm波長帯GaInAsP/InP歪補償量子細線DFBレーザの室温連続動作」, The 52nd Spring Meeting, 2005; The Japan Society of Applied Physics and Related Societies, 29p-V-10, Saitama, Mar. 2005.

3. D. Plumwongrot, T. Maruyama, H. Yagi, K. Miura, Y. Nishimoto, S. Tamura and S. Arai, “Investigation of size distribution in quantum wire pattern by electron beam lithography,” 「EB露光法による量子細線におけるサイズ分布の研究」, The 52nd Spring Meeting, 2005; The Japan Society of Applied Physics and Related Societies, 30p-YW-11, Saitama, Mar. 2005.

4. H. Yagi, K. Miura, Y. Nishimoto, D. Plumwongrot, K. Ohira, T. Maruyama and S. Arai, “low threshold current operation of GaInAsP/InP strain-compensated quantum-wire DFB lasers,” 「GaInAsP/InP歪補償量子細線DFBレーザの低しきい値電流動作」, The 52nd Spring Meeting, 2005; The Japan Society of Applied Physics and Related Societies, 31p-ZH-1, Saitama, Mar. 2005.

5. T. Murayama, K. Ohira, S. M. Ullah, H. Yagi, S. Tamura and S. Arai, “Low threshold current distributed-reflector laser with phase-shifted DFB and high-reflection DBR sections,” 「位相シフトDFB領域と量子細線DBR領域を集積した分布反射型(DR)レーザの低しきい値動作」, The 52nd Spring Meeting, 2005; The Japan Society of Applied Physics and Related Societies, 31p-ZH-2, Saitama, Mar. 2005.

6. K. Miura, H. Yagi, Y. Nishimito, D. Plumwongrot, K. Ohira, T. Maruyama, S. Arai: “GaInAsP/InP strain-compensated quantum-wire DFB lasers with low-damage interfaces,” 「低損傷界面を有するGaInAsP/InP歪補償量子細線DFBレーザ」, The 66th Autumn Meeting, 2005; The Japan Society of Applied Physics, Digest III -p. 1015, 7p-ZN-14, Tokushima, Sep. 2005.

7. Y. Nishimoto, H. Yagi, K. Miura, D. Plumwongrot, K. Ohira, T. Maruyama and S. Arai, “Temperature dependence of threshold current for GaInAsP/InP strain-compensated quantum-wire DFB lasers,” 「GaInAsP/InP歪補償量子細線DFBレーザのしきい値電流の温度依存性」, The 66th Autumn Meeting, 2005; The Japan Society of Applied Physics, 7p-ZN-15, Digest III -p. 1015, Tokushima, Sep. 2005.

8. J. -K. Seo, T. Mizumoto, H. Yagi, D. Plumwongrot, S. Arai: “Measurement of intensity-dependent index changes in MQW-, Quantum Wire-incorporated GaInAsP waveguides,“ 「量子薄膜・量子細線を導入したGaInAsP/InP導波路の光強度依存屈折率変化測定」, The 66th Autumn Meeting, 2005; The Japan Society of Applied Physics 8a-T-25, Digest III -p. 1037, Tokushima, Sep. 2005.

9. D. Plumwongrot, T. Maruyama, A. Haque, H. Yagi, K. Miura, Y. Nishimito, S. Arai: “In-plane polarization anisotropy in GaInAsP/InP Quantum-wire structures,” 「GaInAsP/InP 量子細線構造の偏光異方性」, The 66th Autumn Meeting, 2005; The Japan Society of Applied Physics, 9p-W-15, Digest III -p. 1221, Tokushima, Sep. 2005.

10. T. Maruyama, D. Plumwongrot, H. Yagi, K. Miura, Y. Nishimito, S. Arai: “Anisotropic gain in GaInAsP/InP strain-compensated multiple-quantum-wire structures,” 「GaInAsP/InP歪補償多層量子細線構造の利得異方性」, The 66th Autumn Meeting, 2005; The Japan Society of Applied Physics, 9p-W-16, Digest III -p. 1221, Tokushima, Sep. 2005.

11. K. Miura, Y. Nishimito, D. Plumwongrot, K. Ohira, T. Maruyama, S. Arai: “GaInAsP/InP Quantum-wire DFB lasers with strain-compensated single-quantum-w ell,” 「歪補償単層量子井戸を用いたGaInAsP/InP量子細線DFBレーザ」, The 53rd Spring Meeting, 2006; The Japan Society of Applied Physics and Related Societies., 23a-ZN-2, 東京, Mar. 2006.

12. Y. Nishimito, K. Miura, D. Plumwongrot, K. Ohira, T. Maruyama, S. Arai: “Improvement of characteristic temperature by Bragg wavelength detuning of GaInAsP/InP strain-compensated quantum-wire DFB lasers,” 「ブラッグ波長デチューニングによるGaInAsP/InP歪補償量子細線DFBレーザの特性温度の改善」, The 53rd Spring Meeting, 2006; The Japan Society of Applied Physics and Related Societies., 23a-ZN-3, 東京, Mar. 2006.
　
New Types of Semiconductor Lasers for Photonic Integration
Journal Papers

1. S. Sakamoto, T. Okamoto, T. Yamazaki, S. Tamura and S. Arai, “Multiple-wavelengths membrane BH-DFB laser arrays,” IEEE J. Select. Topics Quantum Electron., vol. 11, no. 5, pp. 1174-1179, Sep./Oct, 2005.

International Conferences

1. S. Sakamoto, T. Okamoto, T. Yamazaki, H. Kawashima, J.-L. Tang, S. Tamura and S. Arai, “Narrow stripe membrane BH-DFB lasers for lateral mode control,” The Pacific Rim Conference on Lasers and Electro Optics/International Quantum Electronics Conference (CLEO-PR/IQEC 2005), CTuJ4-6, p. 429, Tokyo (Japan), Jul. 2005.

2. S. Sakamoto, H. Kawashima, H. Naitoh, S. Tamura, T. Maruyama and S. Arai, “Narrow stripe membrane BH-DFB lasers with surface corrugation for stable single-mode operation,” to be presented at The 18th Indium Phosphide and Related Materials (IPRM2006), TuA1-7, Princeton (USA), May 2006.

3. T. Maruyama, T. Okumura, S. Sakamoto, K. Miura, Y. Nishimoto, and S. Arai, “Direct bonding of GaInAsP/InP membrane structure on SOI wafer,” to be presented at The 18th Indium Phosphide and Related Materials Conference (IPRM2006), WP-2, Princeton (USA), May. 2006.

Domestic Conferences

1. S. Sakamoto, T. Okamoto, T. Yamazaki, H. Kawashima, Tang Jing-Long, S. Tamura and S. Arai, “Membrane BH-DFB laser array with asperity corrugation structure,” 「凹凸形状回折格子を用いた半導体薄膜BH-DFBレーザアレイ」, The 52nd Spring Meeting, 2005; The Japan Society of Applied Physics and Related Societies., 31p-ZH-5, Digest III -p. 1305, Saitama, Mar./Apr. 2005.

2. H. Kawashima, S. Sakamoto, T. Okamoto, T. Yamazaki, Tang Jing-Long, S. Tamura and S. Arai, “Lateral-mode control of membrane BH-DFB lasers with narrow stripe,” 「狭ストライプ半導体薄膜BH-DFBレーザの横モード制御」, The 52nd Spring Meeting, 2005; The Japan Society of Applied Physics and Related Societies.,31p-ZH-6, Digest III -p. 1306, Saitama, Mar./Apr. 2005.

3. S. Sakamoto, H. Kawashima, H. Naitoh, S. Tamura, T. Tamura and S. Arai, “Narrow stripe membrane BH-DFB laser array using surface corrugation,” 「凹凸形状回折格子を用いた狭ストライプ半導体薄膜BH-DFBレーザアレイ」, The 53rd Spring Meeting, 2006; The Japan Society of Applied Physics and Related Societies., 23a-ZN-4, Tokyo, Mar. 2006.

4. T. Maruyama, T. Okumura and S. Arai, “Direct bonding of GaInAsP/InP membrane structure on
SOI substrate,” 「SOI 基板上へのGaInAsP/InP 薄膜直接貼り付け」, The 53rd Spring Meeting, 2006; The Japan Society of Applied Physics and Related Societies., 24a-B-6, Tokyo, Mar. 2006.