1. Y. Nishimoto, K. Miura, H. Yagi, D. Plumwongrot, K. Ohira, T. Maruyama, S. Arai, “Low-Threshold Current Density GaInAsP/InP Quantum-Wire Distributed Feedback Lasers Fabricated by Low-Damage Processes,” Jpn. J. Appl. Phys., vol. 46, no. 2, pp. L34-L36, Feb. 2007.

2. K. Mathwig, W. Kaiser, A. Somers, J. P. Reithmaier, A. Forchel, K. Ohira, S. M. Ullah, and S. Arai, “DFB Lasers With Deeply Etched Vertical Grating Based on InAs?InP Quantum-Dash Structures,” IEEE Photon. Technol. Lett., vol. 19, no. 5, pp. 264-266, Mar. 2007.

3. Y. Nishimoto, H. Yagi, K. Miura, D. Plumwongrot, K. Ohira, T. Maruyama and S. Arai, “High T₀ Operation of 1590 nm GaInAsP/InP Quantum-Wire Distributed Feedback Lasers by Bragg Wavelength Detuning,” accepted for publication in Jpn. J. Appl. Phys.

1. Y. Nishimoto, K. Miura, H. Yagi, D. Plumwongrot, K. Ohira, T. Maruyama, and S. Arai, “High T₀ operation of 1590 nm GaInAsP/InP quantum-wire DFB lasers by Bragg wavelength detuning,” The 18th Indium Phosphide and Related Materials Conference (IPRM2006), Princeton (USA), TuA1-5, May 2006.

2. S. M. Ullah, SH Lee, R. Suemitsu, K. Ohira and S. Arai, “Improved Performance of Distributed-Reflector Laser with Antireflection Coating,” The 18th Indium Phosphide and Related Materials Conference (IPRM2006), Princeton (USA), WP-25, May 2006.

3. R. Suemitsu, S. M. Ullah, S. H. Lee, M. Otake, N. Nishiyama and S. Arai, “Integration of Front Power Monitor with Distributed Reflector Laser through Deep Etched Narrow Groove Isolation,” The 19th Indium Phosphide and Related Materials Conference (IPRM2007), Matsue (Japan), TuB2-5, May 2007.

4. S. M. Ullah, R. Suemitsu, S. H. Lee, M. Otake, N. Nishiyama and S. Arai, “Sub milliampere operation of 1540 nm wavelength Distributed Reflector Laser with Wirelike Active Regions,” The 19th Indium Phosphide and Related Materials Conference (IPRM2007), Matsue (Japan), ThB2-1, May 2007.

5. Y. Nishimoto, D. Plumwongrot, S. M. Ullah, Y. Tamura, M. Kurokawa, T. Maruyama, N. Nishiyama and S. Arai, “Improved Temperature Dependence of GaInAsP/InP DFB Lasers with Wirelike Active Regions by Bragg Wavelength Detuning,” The 19th Indium Phosphide and Related Materials Conference (IPRM2007), Matsue (Japan), ThB2-3, May 2007.

6. H. Itoh, M. Yoshita, H. Akiyama, D. Plumwongrot, T. Maruyama, S. Arai, “Photoluminescence of GaInAsP/InP Single Quantum Wires with Lateral Widths down to 6 nm Fabricated by Dry Etching and Regrowth,” Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference (CLEO/QELS 2007), Baltimore (USA), CThGG3, May 2007.

1. Y. Nishimoto, D. Plumwongrot, T. Maruyama and S. Arai, “Improvement of characteristic temperature of GaInAsP/InP quantum-wire DFB lasers by Bragg wavelength detuning,” 「ブラッグ波長デチューニングによるGaInAsP/InP量子細線DFBレーザの特性温度の改善」, Technical Report of IEICE, OPE2006-19, LQE2006-23(2006-06), pp. 21-14, Tokyo (Japan), Jun. 2006.

2. S. M. Ullah, R. Suemitsu, S. H. Lee, M. Otake, N. Nishiyama and S. Arai, “Low threshold current DR laser with wirelike active regions and integration of EAM with high electrical isolation,” Technical Report of IEICE, LQE2006-114(2006-12), pp. 61-65, Tokyo (Japan), Dec. 2006.

1. K. Miura, Y. Nishimito, D. Plumwongrot, K. Ohira, T. Maruyama, S. Arai: “GaInAsP/InP Quantum-wire DFB lasers with strain-compensated single-quantum-w ell,” 「歪補償単層量子井戸を用いたGaInAsP/InP量子細線DFBレーザ」, The 53rd Spring Meeting, 2006; The Japan Society of Applied Physics and Related Societies., 23a-ZN-2, Digest III-p. 1227, Tokyo, Mar. 2006.

2. Y. Nishimito, K. Miura, D. Plumwongrot, K. Ohira, T. Maruyama, S. Arai: “Improvement of characteristic temperature by Bragg wavelength detuning of GaInAsP/InP strain-compensated quantum-wire DFB lasers,” 「ブラッグ波長デチューニングによるGaInAsP/InP歪補償量子細線DFBレーザの特性温度の改善」, The 53rd Spring Meeting, 2006; The Japan Society of Applied Physics and Related Societies., 23a-ZN-3, Digest III-p. 1227, Tokyo, Mar. 2006.

3. Y. Nishimoto, D. Plumwongrot, Y. Tamura, T. Maruyama and S. Arai, “High T0 operation of 1590 nm GaInAsP/InP quantum-wire DFB lasers by Bragg wavelength detuning,”「ブラッグ波長デチューニングを用いたGaInAsP/InP活性層分離型DFBレーザの温度依存性」, The 67th Autumn Meeting, 2006; The Japan Society of Applied Physics, 29a-ZT-8, Digest III-p. 1047, Ohtsu, Aug. 2006.

4. S. H. Lee, S. M. Ullah, R. Suemitsu and S. Arai, “Threshold Current Reduction of Distributed Reflector (DR) Laser after Antireflection Coating” The 67th Autumn Meeting, 2006; The Japan Society of Applied Physics, 29a-ZT-9, Digest III -p. 1047, Ohtsu, Aug. 2006.

5. S. M. Ullah, R. Suemitsu, S. H. Lee and S. Arai, “A low threshold current operation of Distributed Reflector (DR) Laser”, The 67th Autumn Meeting, 2006; The Japan Society of Applied Physics, 29a-ZT-10, Digest III -p. 1048, Ohtsu, Aug. 2006.

6. D. Plumwongrot, H. Itoh, Y. Tamura, Y. Nishimoto, T. Maruyama, H. Akiyama and S. Arai, “Photoluminescence properties in GaInAsP/InP Single line Quantum-Wire Structure,” 「GaInAsP/InP 単一量子細線構造のPL特性」, The 67th Autumn Meeting, 2006; The Japan Society of Applied Physics, 31a-RE-1, Digest III-p. 1268, Ohtsu, Aug. 2006

7. Y. Tamura, D. Plumwongrot, Y. Nishimoto, T. Maruyama and S. Arai, “Fabrication of GaInAsP/InP Arbitrary Shaped Low Dimensional Quantum Structures,”「GaInAsP/InP任意形状低次元量子構造の作製」, The 67th Autumn Meeting, 2006; The Japan Society of Applied Physics, 31a-RC-6, Digest II-p. 648, Ohtsu, Aug. 2006.

8. D. Plumwongrot, Y. Tamura, Y. Nishimoto, M. Kurokawa, T. Maruyama and S. Arai, “Plasma Induced Material Composition Alteration in GaInAsP/InP Quantum-Well Structure,” The 54th Spring Meeting, 2007; The Japan Society of Applied Physics and Related Societies, 27a-SM-9, Digest III-p. 1483, Sagamihara, Mar. 2007.

9. S. M. Ullah, R. Suemitsu, S.-H. Lee, Y. Nishimoto, M. Otake, N. Nishiyama and S. Arai, “Distributed Reflector Laser Integrated with Electro Absorption Modulator using Width Modulated Wirelike Active Regions,”「細線状活性層の線幅変調による電界吸収変調器集積DRレーザ」, The 54th Spring Meeting, 2007; The Japan Society of Applied Physics and Related Societies, 28p-SG-14, Digest III-p. 1226, Sagamihara, Mar. 2007.

10. R. Suemitsu, S. M. Ullah, S.-H. Lee, Y. Nishimoto, M. Otake, N. Nishiyama and S. Arai, “Integration of Front Power Monitor with Distributed Reflector Laser Deeply Etched Narrow Groove for Electrical Isolation,”「深い極微溝による電気的分離を利用したDRレーザ前端面へのパワーモニターの集積」, The 54th Spring Meeting, 2007; The Japan Society of Applied Physics and Related Societies, 28p-SG-15, Digest III-p. 1226, Sagamihara, Mar. 2007.

1. T. Maruyama, T. Okumura, S. Sakamoto, K. Miura, Y. Nishimoto and S. Arai, “GaInAsP/InP membrane BH-DFB lasers directly bonded on SOI substrate,” Optics Express, vol. 14, no. 18, pp. 8184-8188 Sep. 2006.

2. T. Maruyama, T. Okumura and S. Arai, “Direct wafer bonding of GaInAsP/InP membrane structure on silicon-on-insulator substrate,” Jpn. J. Appl. Phys., vol. 45, no. 11, pp. 8717-8718, Nov. 2006.

3. S. Sakamoto, H. Kawashima, H. Naitoh, S. Tamura, T. Maruyama and S. Arai, “Reduced Temperature Dependence of Lasing Wavelength in Membrane Buried Heterostructure DFB Lasers with Polymer Cladding Layers,” IEEE Photon. Technol. Lett., vol. 19, no. 5, pp. 291-293, Mar. 2007.

1. S. Sakamoto, H. Kawashima, H. Naitoh, S. Tamura, T. Maruyama and S. Arai, “Narrow stripe membrane BH-DFB lasers with surface corrugation for stable single-mode operation,” The 18th Indium Phosphide and Related Materials Conference (IPRM2006), TuA1-7, Princeton (USA), May 2006.

2. T. Maruyama, T. Okumura, S. Sakamoto, K. Miura, Y. Nishimoto, and S. Arai, “Direct bonding of GaInAsP/InP membrane structure on SOI wafer,” The 18th Indium Phosphide and Related Materials Conference (IPRM2006), WP-2, Princeton (USA), May 2006.

3. S. Sakamoto, H. Kawashima, H. Naitoh, S. Tamura, T. Maruyama and S. Arai, “Low threshold membrane BH-DFB lasers using surface corrugation structure”, The 11th Optoelectronics Communication Conference (OECC2006), 5E1-3, Kaohsiung (Taiwan), Jul. 2006.

4. T. Maruyama, T. Okumura , S Sakamoto , K. Miura ,Y Nishimoto and S. Arai: “GaInAsP/InP long-wavelength membrane BH-DFB lasers directly bonded on SOI Substrate,” The 11th Optoelectronics Communication Conference (OECC2006), 5E1-4, Kaohsiung (Taiwan), Jul. 2006.

5. S. Sakamoto, H. Naitoh, H. Kawashima, Y. Nishimoto, S. Tamura, T. Maruyama and S. Arai: “1-step OMVPE grown strongly index-coupled membrane DFB laser with surface corrugation grating structure,” 2006 IEEE 19th International Semiconductor Laser Conference (ISLC2006), P 10, Hawaii (USA), Sep. 2006.

6. S. Sakamoto, H. Naitoh, H. Kawashima, M. Ohtake, S. Tamura, T. Maruyama N. Nishiyama and S. Arai: “85 ℃ continuous wave operation of membrane BH-DFB Laser cladded by benzocyclobutene,” 10th International Symposium on Contemporary Photonics Technology (CPT 2007), G-6, Tokyo (Japan), Jan. 2007.

7. N. Nishiyama, C. Caneau, A. Kobyakov, J. D. Downie, M. Sauer and C. Zah, “1.3 and 1.55-mm InP-based VCSELs for digital and radio signal transmission (invited),” The Optical Fiber Communication Conference (OFC 2007), OMK-4, Anaheim (USA), Mar. 2007.

8. T. Okumura, T. Maruyama, M. Kanemaru, S. Sakamoto, S. Tamura, S. Arai, “Fundamental-mode operation of GaInAsP/InP membrane DFB lasers bonded on SOI substrate and its waveguide integration,” to be presented at The 19th Indium Phosphide and Related Material (IPRM 2007), TuB2-2, Matsue (Japan), May 2007.

9. H. Naitoh, S. Sakamoto, M. Ohtake, T. Okumura, T. Maruyama, N, Nishiyama and S. Arai, “80 ℃ CW operation of GaInAsP/InP membrane BH-DFB laser with air-bridge structure,” to be presented at The 19th Indium Phosphide and Related Material (IPRM 2007), ThB1-2, Matsue (Japan), May 2007.

1. S. Sakamoto, T. Okamoto, T. Yamazaki, H. Kawashima, Tang Jing-Long, S. Tamura and S. Arai, “Membrane BH-DFB laser array with asperity corrugation structure,” 「凹凸形状回折格子を用いた半導体薄膜BH-DFBレーザアレイ」, The 52nd Spring Meeting, 2005; The Japan Society of Applied Physics and Related Societies., 31p-ZH-5, Digest III -p. 1305, Saitama, Mar./Apr. 2005.

2. H. Kawashima, S. Sakamoto, T. Okamoto, T. Yamazaki, Tang Jing-Long, S. Tamura and S. Arai, “Lateral-mode control of membrane BH-DFB lasers with narrow stripe,” 「狭ストライプ半導体薄膜BH-DFBレーザの横モード制御」, The 52nd Spring Meeting, 2005; The Japan Society of Applied Physics and Related Societies.,31p-ZH-6, Digest III -p. 1306, Saitama, Mar./Apr. 2005.

3. S. Sakamoto, H. Kawashima, H. Naitoh, S. Tamura, T. Tamura and S. Arai, “Narrow stripe membrane BH-DFB laser array using surface corrugation,” 「凹凸形状回折格子を用いた狭ストライプ半導体薄膜BH-DFBレーザアレイ」, The 53rd Spring Meeting, 2006; The Japan Society of Applied Physics and Related Societies., 23a-ZN-4, Tokyo, Mar. 2006.

4. T. Maruyama, T. Okumura and S. Arai, “Direct bonding of GaInAsP/InP membrane structure on
SOI substrate,” 「SOI 基板上へのGaInAsP/InP 薄膜直接貼り付け」, The 53rd Spring Meeting, 2006; The Japan Society of Applied Physics and Related Societies., 24a-B-6, Tokyo, Mar. 2006.