1. Y. Nishimoto, K. Miura, H. Yagi, D. Plumwongrot, K. Ohira, T. Maruyama, and S. Arai: "Low-Threshold Current Density GaInAsP/InP Quantum-Wire Distributed Feedback Lasers Fabricated by Low-Damage Processes," Jpn. J. Appl. Phys., vol. 46, no. 2, pp. L34-L36, Feb. 2007.

2. K. Mathwig, W. Kaiser, A. Somers, J. P. Reithmaier, A. Forchel, K. Ohira, S. M. Ullah, and S. Arai, "DFB Lasers With Deeply Etched Vertical Grating Based on InAs-InP Quantum-Dash Structures," IEEE Photon. Technol. Lett., vol. 19, no. 5, pp. 264-266, Mar. 2007.

3. Y. Nishimoto, H. Yagi, K. Miura, D. Plumwongrot, K. Ohira, T. Maruyama, and S. Arai, "High T₀ Operation of 1590 nm GaInAsP/InP Quantum-Wire Distributed Feedback Lasers by Bragg Wavelength Detuning," Jpn. J. Appl. Phys. vol. 46, no, 17, pp. L411-413, Apr 2007.

4. S. Lee, R. Suemitsu, S. M. Ullah, M. Otake, N. Nishiyama, and S. Arai: "Very High Electric Isolation Resistance between Distributed Reflector Laser and Front Power Monitor through Deeply Etched Narrow Groove," Jpn. J. Appl. Phys., vol. 46, no. 39, 2007, pp. L954-L956, Oct. 2007.

5. S. M. Ullah, R. Suemitsu, S. Lee, M. Otake, N. Nishiyama, and S. Arai: "Low-Threshold-Current Operation of High-Mesa Stripe Distributed Reflector Laser Emitting at 1540 nm," Jpn. J. Appl. Phys., vol. 46, no. 44, 2007, pp. L1068-L1070, Nov. 2007.

6. D. Plumwongrot, Y. Nishimoto, S. M. Ullah, Y. Tamura, M. Kurokawa, T. Maruyama, N. Nishiyama, and S. Arai: "Bragg Wavelength Detuning in GaInAsP/InP Distributed Feedback Lasers with Wirelike Active Regions," Jpn. J. Appl. Phys., vol. 46, no. 45, pp. L1090-L1092, Nov. 2007.

1. H. Itoh, M. Yoshita, H. Akiyama, D. Plumwongrot, T. Maruyama, S. Arai: "Photoluminescence of GaInAsP/InP Single Quantum Wires with Lateral Widths down to 6 nm Fabricated by Dry Etching and Regrowth," Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference (CLEO/QELS 2007), Baltimore (USA), CThGG3, May 2007.

2. R. Suemitsu, S. M. Ullah, S. H. Lee, M. Otake, N. Nishiyama and S. Arai, "Integration of Front Power Monitor with Distributed Reflector Laser through Deep Etched Narrow Groove Isolation," The 19th Indium Phosphide and Related Materials Conference (IPRM2007), Matsue (Japan), TuB2-5, May 2007.

3. S. M. Ullah, R. Suemitsu, S. H. Lee, M. Otake, N. Nishiyama and S. Arai, "Sub milliampere operation of 1540 nm wavelength Distributed Reflector Laser with Wirelike Active Regions," The 19th Indium Phosphide and Related Materials Conference (IPRM2007), Matsue (Japan), ThB2-1, May 2007.

4. Y. Nishimoto, D. Plumwongrot, S. M. Ullah, Y. Tamura, M. Kurokawa, T. Maruyama, N. Nishiyama and S. Arai, "Improved Temperature Dependence of GaInAsP/InP DFB Lasers with Wirelike Active Regions by Bragg Wavelength Detuning," The 19th Indium Phosphide and Related Materials Conference (IPRM2007), Matsue (Japan), ThB2-3, May 2007.

5. D. Plumwongrot, M. Kurokawa, T. Okumura, Y. Nishimoto, T. Maruyama, N. Nishiyama, and S. Arai: "Observation of RIE Induced Damage on Lasing Properties of GaInAsP/InP MQW Lasers Fabricated by 2-step Growths," The 34th International Symposium on Compound Semiconductors (ISCS2007), Kyoto (Japan), ThC-P9, Oct. 2007.

6. D. Plumwongrot, Y. Tamura, T. Maruyama, N. Nishiyama, and S. Arai: "Fabrication of GaInAsP/InP Arbitrary Shaped Low Dimensional Quantum Structures," The 20th International Microprocesses and Nanotechnology Conference (MNC2007), Kyoto (Japan), 6A-4-51, Nov. 2007.

7. D. Plumwongrot, Y. Tamura, Y. Nishimoto, M. Kurokawa, T. Maruyama, N. Nishiyama, and S. Arai, "Length dependencies of in-plane polarizations anisotropy in GaInAsP/InP quantum-wire structures fabricated by dry etching and regrowth process," OPTO2008 (part of SPIE Photonics West 2008), San Jose (USA), 6902-4, Jan. 2008.

8. D. Plumwongrot, M. Kurokawa, T. Okumura, Y. Nishimoto, T. Maruyama, N. Nishiyama, and S. Arai: "Reduction of RIE Induced Damage on Lasing Properties of GaInAsP/InP DQW Lasers Fabricated by 2-step Growths," OPTO2008 (part of SPIE Photonics West 2008), 6909-11, San Jose (USA), Jan. 2008.

9. S. Arai, "GaInAsP/InP distributed feedback and distributed reflector lasers with fine wirelike active regions (Invited Paper)," OPTO2008 (part of SPIE Photonics West 2008), San Jose (USA), 6900-6, Jan. 2008.

1. プルームウォンロート・タノーム、田村洋介、西本頼史、黒川宗高、丸山武男、荒井滋久：「Plasma Induced Material Composition Alteration in GaInAsP/InP Quantum-Well Structure」, The 54th Spring Meeting, 2007; The Japan Society of Applied Physics and Related Societies., 27a-SM-9, Sagamihara, Mar. 2007.

2. ウラ・サイドマムド、末光涼、李承勲、西本頼史、大武誠人、西山伸彦、荒井滋久：「細線状活性層の線幅変調による電界吸収変調器集積DRレーザ」, The 54th Spring Meeting, 2007; The Japan Society of Applied Physics and Related Societies., 28p-SG-14, Sagamihara, Mar. 2007.

3. 末光涼、ウラ・サイドマムド、李承勲、西本頼史、大武誠人、西山伸彦、荒井滋久：「深い極微溝による電気的分離を利用したDRレーザ前端面へのパワーモニターの集積」, The 54th Spring Meeting, 2007; The Japan Society of Applied Physics and Related Societies., 28p-SG-154, Sagamihara, Mar. 2007.

4. DHANORM PLUMWONGROT、田村洋介、西本頼史、黒川宗高、丸山武男、西山伸彦、荒井滋久：「Wire-Length Dependence of Polarization Anisotropy in GaInAsP/InP Quantum-Wire Structures」, The 68th Autumn Meeting, 2007; The Japan Society of Applied Physics, 7a-N-11, Digest III-p. 1421, Sapporo, Sept. 2007.

5. 黒川宗高、Dhanorm Plumwongrot、西本頼史、丸山武男、西山伸彦、荒井滋久：「2段階OMVPE成長GaInAsP/InP量子井戸レーザにおけるRIEプラズマ損傷とその低減」, The 68th Autumn Meeting, 2007; The Japan Society of Applied Physics., 7p-C-6, Digest III-p. 1162, Sapporo, Sept. 2007.

6. 李承勲、Saeed Mahmud Ullah、進藤隆彦、Kyle Spencer Davis、西山伸彦、荒井滋久：「細線状活性層を有する分布反射型レーザの直接変調特性」、The 2008 IEICE General Conference, C-4-29, Kita-kyusyu, Mar. 2008.

7. Dhanorm Plumwongrot、小沢浩二、黒川宗高、田村茂雄、丸山武男、西山伸彦、荒井滋久：「低温現像によるGaInAsP/InP量子細線構造の線幅ばらつきの低減」、The 55th Spring Meeting, 2008; The Japan Society of Applied Physics and Related Societies, 28p-E-18, Digest III-p. 1453, Funabashi, Mar. 2008.

8. 黒川宗高、Dhanorm Plumwongrot、小沢浩二、丸山武男、西山伸彦、荒井滋久：「GaInAsP/InP量子井戸構造のRIEプラズマによるPL強度劣化とアニールによる回復」、The 55th Spring Meeting, 2008; The Japan Society of Applied Physics and Related Societies, 28p-P9-7, Digest III-p. 1465, Funabashi, Mar. 2008.

1. S. Sakamoto, H. Kawashima, H. Naitoh, S. Tamura, T. Maruyama and S. Arai, "Reduced Temperature Dependence of Lasing Wavelength in Membrane Buried Heterostructure DFB Lasers with Polymer Cladding Layers," IEEE Photon. Technol. Lett., vol. 19, no. 5, pp. 291-293, Mar. 2007.

2. S. Sakamoto, H. Naitoh, M. Ohtake, Y. Nishimoto, S. Tamura, T. Maruyama, N. Nishiyama, S. Arai: "Strongly Index-Coupled Membrane BH-DFB Lasers With Surface Corrugation Grating," IEEE J. Select. Topics Quantum Electron., vol. 13, no. 5, part 1, pp. 1135-1141, Sept. 2007.

3. S. Sakamoto, H. Naitoh, M. Ohtake, Y. Nishimoto, T. Maruyama, N. Nishiyama, and S. Arai: "85°C Continuous-Wave Operation of GaInAsP/InP-Membrane Buried Heterostructure Distributed Feedback Lasers with Polymer Cladding Layer," Jpn. J. Appl. Phys., vol. 46, no. 47, pp. L1155-L1157, Nov. 2007.

4. H. Naitoh, S. Sakamoto, M. Ohtake, T. Okumura, T. Maruyama, N. Nishiyama, and S. Arai: "GaInAsP/InP Membrane Buried Heterostructure Distributed Feedback Laser with Air-Bridge Structure," Jpn. J. Appl. Phys., vol. 46, no. 47, 2007, pp. L1158-L1160, Nov. 2007.

5. T. Okumura, T. Maruyama, M. Kanemaru, S. Sakamoto, and S. Arai: "Single-Mode Operation of GaInAsP/InP-Membrane Distributed Feedback Lasers Bonded on Silicon-on-Insulator Substrate with Rib-Waveguide Structure," Jpn. J. Appl. Phys., vol. 46, no. 48, pp. L1206-L1208, Dec. 2007.

1. S. Sakamoto, H. Naitoh, H. Kawashima, M. Ohtake, S. Tamura, T. Maruyama N. Nishiyama and S. Arai: "85 °C continuous wave operation of membrane BH-DFB Laser cladded by benzocyclobutene," 10th International Symposium on Contemporary Photonics Technology (CPT 2007), G-6, Tokyo (Japan), Jan. 2007.

2. N. Nishiyama, C. Caneau, A. Kobyakov, J. D. Downie, M. Sauer and C. Zah, "1.3 and 1.55-mm InP-based VCSELs for digital and radio signal transmission (invited)," The Optical Fiber Communication Conference (OFC 2007), OMK-4, Anaheim (USA), Mar. 2007.

3. T. Okumura, T. Maruyama, M. Kanemaru, S. Sakamoto, S. Tamura, S. Arai, "Fundamental-mode operation of GaInAsP/InP membrane DFB lasers bonded on SOI substrate and its waveguide integration," The 19th Indium Phosphide and Related Material (IPRM 2007), TuB2-2, Matsue (Japan), May 2007.

4. H. Naitoh, S. Sakamoto, M. Ohtake, T. Okumura, T. Maruyama, N, Nishiyama and S. Arai, "80 °C CW operation of GaInAsP/InP membrane BH-DFB laser with air-bridge structure," The 19th Indium Phosphide and Related Material (IPRM 2007), ThB1-2, Matsue (Japan), May 2007.

5. T. Maruyama, T. Okumura, M. Kanemaru, S. Sakamoto, S. Tamura, and S. Arai: "GaInAsP/InP Membrane DFB Lasers Directly Boded on SOI Substrate with Rib-waveguide Structure," 12th OptoElectronics and Communications Conference/16th Intl Conference on Integrated Optics & Optical Fiber Communication (OECC/IOOC 2007), Yokohama (Japan), no. 12D1-3, pp. 390-391, July 2007.

6. N. Nishiyama, C. Caneau, M. Sauer, A. Kobyakov and C. E. Zah: "InP-based long wavelength VCSELs: Their Characteristics and Applications," (Invited) SPIE 2007 Asia Pacific Optical Communications (APOC 2007), Wuhan (China), Nov. 2007.

1. H. Naitoh, S. Sakamoto, M. Otake, T. Okumura, T. Maruyama, N, Nishiyama, S. Arai, "GaInAsP/InP membrane BH-DFB lasers on SOI substrate by direct bonding," 「エアブリッジ構造を用いたGaInAsP/InP半導体薄膜BH-DFBレーザ」, Technical Report of IEICE, LQE2007-21, pp. 19-22, Tokyo (Japan), June. 2007.

1. 丸山武男、奥村忠嗣、金丸正樹、阪本真一、荒井滋久：「導波路集積型SOI基板上GaInAsP/InP薄膜DFBレーザ」, The 54th Spring Meeting, 2007; The Japan Society of Applied Physics and Related Societies., 28a-SG-11, Sagamihara, Mar. 2007.

2. 内藤秀幸、阪本真一、大竹守、奥村忠嗣、丸山武男、西山伸彦、荒井滋久：「エアブリッジ構造を用いたGaInAsP/InP半導体薄膜BH-DFBレーザ」, The 54th Spring Meeting, 2007; The Japan Society of Applied Physics and Related Societies., 28p-SG-11, Sagamihara, Mar. 2007.

3. 奥村忠嗣、丸山武男、金丸正樹、荒井滋久：「直接貼付法によるSOI基板上GaInAsP/InP-LED」, The 68th Autumn Meeting, 2007; The Japan Society of Applied Physics, 7a-C-13, Digest III-p. 1160, Sapporo, Sept. 2007.

4. 丸山武男、奥村忠嗣、荒井滋久：「シリコン上レーザ実現への展望 （招待講演）」、The 2007 IEICE Society Conference, CK-1-8, Tottori, Sept. 2007.

5. 西山伸彦、香野花沙鈴、石錘恩：「InP系長波長帯面発光レーザの現状」（依頼講演）、The 2008 IEICE General Conference, C-4-27, Kita-kyusyu, Mar. 2008.

6. 奥村忠嗣、丸山武男、米澤英徳、西山伸彦、荒井滋久：「直接貼付法によるSOI基板上注入形GaInAsP/InP DFB レーザ」、The 55th Spring Meeting, 2008; The Japan Society of Applied Physics and Related Societies, 29p-ZQ-4, Digest III-p. 1208, Chiba, Mar. 2008.

7. 井上敬太、プルームウォンロート･タノーム、西山伸彦、阪本真一、榎本晴基、田村茂雄、丸山武男、荒井滋久：「C60含有と非含有EBレジストZEPの重ね塗りによるSi導波路ドライエッチング形状の向上」、The 55th Spring Meeting, 2008; The Japan Society of Applied Physics and Related Societies, 29p-ZG-15, Digest III-p. 1240, Funabashi, Mar. 2008.