1. T. Okumura, T. Maruyama, H. Yonezawa, N. Nishiyama, and S. Arai, “Injection-type GaInAsP/InP/Si Distributed-feedback Laser Directly Bonded on Silicon-on-insulator Substrate,” IEEE Photon. Technol. Lett., vol. 21, no. 5, pp. 283-285, Mar. 2009.

2. K. Inoue, D. Plumwongrot, N. Nishiyama, S. Sakamoto, H. Enomoto, S. Tamura, T. Maruyama, and S. Arai, “Loss Reduction of Si Wire Waveguide Fabricated by Edge-Enhancement Writing for Electron Beam Lithography and Reactive Ion Etching Using Double Layered Resist Mask with C60,” Jpn. J. Appl. Phys. vol. 48, no. 3, pp. 30208-1-30208-3, Mar. 2009.

1. T. Okumura, T. Maruyama, H. Hidenori, N, Nishiyama, S. Arai, “Injection Type GaInAsP/InP/Si DFB Lasers Directly Bonded on SOI Substrate,” The 20th Indium Phosphide and Related Material (IPRM 2008), TuA1-6, Versaille (France), May 2008.

2. T. Okumura, M. Kurokawa, M. Shirao, D. Kondo, H. Ito, N. Nishiyama and S. Arai, “GaInAsP/InP Lateral Current Injection Laser Grown on SI-InP Substrate,” International Nano-Optoelectronics Workshop (iNOW 2008), 2-P27, Tokyo/Saiko/Hayama, Aug. 2008.

3. K. Inoue, N. Nishiyama, H. Enomoto, S. Tamura, T. Maruyama, S. Arai, “Evaluation of Si Wire Waveguide Fabricated by Parallel Plate RIE Process using Double Layered EB Resist Containing C60,” International Nano-Optoelectronic Workshop (iNOW 2008), 3-P24, Tokyo/Saiko/Hayama, Aug. 2008.

4. H. Enomoto, H. D. Nguyen, K. Inoue, S. Sakamoto, T. Okumura, N. Nishiyama, S. Kondo, S. Arai, “Comparison of Wafer Bonding Methods of Membrane GaInAsP WiredWaveguides on Si Substrate,” International Nano-Optoelectronic Workshop (iNOW 2008), 3-P27, Tokyo/Saiko/Hayama, Aug. 2008

5. H. Yonezawa, T. Okumura, T. Maruyama, N, Nishiyama, S. Arai, “Injection Type GaInAsP/InP DFB Lasers,” International Nano-Optoelectronic Workshop (iNOW 2008), 4-P16, Tokyo/Saiko/Hayama, Aug. 2008.

6. T. Okumura, M. Kurokawa, M. Shirao, D. Kondo, N. Nishiyama and S. Arai, “Top-Air-Cladding GaInAsP/InP Lateral Current Injection Type Lasers,” The 2nd IEEE Nanotechnology Materials and Device Conference 2008 (NMDC 2008), MoC I-5, Kyoto (Japan), Oct. 2008.

7. K. Inoue, D. Plumuwongrot, N. Nishiyama, S. Sakamono, H. Enomoto, S. Tamura, T. Maruyama, S. Arai, “Loss Reduction of Si WireWaveguide on SOI Substrate Prepared by Parallel Plate RIE using Double Layered Resist Mask with C60,” The 2nd IEEE Nanotechnology Materials and Device Conference 2008 (NMDC 2008), MoP-21, Kyoto (Japan), Oct. 2008.

1. T. Okumura, T. Maruyama, H. Hidenori, N, Nishiyama, S. Arai, “Electrically pumped GaInAsP/InP DFB Laser on SOI Substrate by Direct Wafer Bonding,” 「SOI基板への直接貼り付け法によるGaInAsP-InP DFBレーザ」, Technical Report of IEICE, LQE2008-29, pp. 45-50, Tokyo (Japan), June. 2008.

2. S. Arai, T. Maruyama, N. Nishiyama, T. Okumura, M. Kurokawa, M. Shirao, Y. Yonezawa, D. Kondo, H. Ito “Membrane Semiconductor Lasers on SOI Substrates”, 「SOI上の半導体薄膜レーザ」 Technical Meeting of IEICE, SiPH2008-15, pp.19-24, Tokyo (Japan), Nov. 2008.

3. T. Okumura, M. Kurokawa, M. Shirao, D. Kondo, H. Ito, N. Nishiyama and S. Arai “Lateral current injection type GaInAsP laser on Semi-insulating Substrate for Semiconductor Membrane Laser” 「半導体薄膜レーザ実現に向けた半絶縁性基板上GaInAsP薄膜への横注入型レーザ」, Technical Report of IEICE, LQE2008-137, pp. 47-52, Tokyo (Japan), Dec. 2008.

1. 奥村忠嗣、丸山武男、米澤英徳、西山伸彦、荒井滋久：「直接貼付法によるSOI基板上注入形GaInAsP/InP DFB レーザ」、The 55th Spring Meeting, 2008; The Japan Society of Applied Physics and Related Societies, 29p-ZQ-4, Digest III-p. 1208, Chiba, Mar. 2008.

2. 井上敬太、プルームウォンロート･タノーム、西山伸彦、阪本真一、榎本晴基、田村茂雄、丸山武男、荒井滋久：「C60含有と非含有EBレジストZEPの重ね塗りによるSi導波路ドライエッチング形状の向上」、The 55th Spring Meeting, 2008; The Japan Society of Applied Physics and Related Societies, 29p-ZG-15, Digest III-p. 1240, Chiba, Mar. 2008.

3. 黒川宗高、奥村忠嗣、白尾瑞基、近藤大介、伊藤瞳、西山伸彦、荒井滋久：「OMVPE再成長法による薄膜クラッド層を有する横方向電流注入型レーザ」, The 69th Autumn Meeting, 2008; The Japan Society of Applied Physics, 2p-P3-8, Digest III-p. 1020, Aichi, Sept. 2008

4. 荒井滋久：「SOI基板上のアクティブ光デバイス」（Tutorial）、The 2008 IEICE Society Conference, CT-1-2, Kanagawa, Sept. 2008.

5. 西山伸彦、丸山武男、荒井滋久：「シリコン基板上半導体レーザ・発光デバイスの現状」（依頼講演）、The 2009 IEICE General Conference, CI-2-4, Ehime, Mar. 2009.

6. 奥村忠嗣、黒川宗高、近藤大介、伊藤瞳、西山伸彦、荒井滋久：「半絶縁性基板上の横方向注入型DFBレーザ」、The 56th Spring Meeting, 2009; The Japan Society of Applied Physics and Related Societies, 1a-G-2, Digest III, Ibaraki, Mar/Apr. 2009.

7. 奥村忠嗣、黒川宗高、伊藤瞳、近藤大介、西山伸彦、荒井滋久：「横方向電流注入型ファブリ・ペローレーザの室温連続動作」、The 56th Spring Meeting, 2009; The Japan Society of Applied Physics and Related Societies, 1a-G-2, Digest III, Ibaraki, Mar/Apr. 2009.

8. 渥美祐樹、西山伸彦、榎本晴基、井上敬太、荒井滋久:「BCB埋め込みSiスロット導波路による波長フィルタの温度無依存化の検討」、The 56th Spring Meeting, 2009; The Japan Society of Applied Physics and Related Societies, 1a-B-12, Digest III, Ibaraki, Mar/Apr. 2009.

9. 榎本晴基、井上敬太、奥村忠嗣、グェン・ドゥック・ハン、西山伸彦、渥美祐樹、近藤志文、荒井滋久:「Si上BCB貼付型強光閉じ込めGaInAsP細線導波路の特性」、The 56th Spring Meeting, 2009; The Japan Society of Applied Physics and Related Societies, 2P-A-8, Digest III, Ibaraki, Mar/Apr. 2009.

1. S. M. Ullah, S.H. Lee, R. Suemitsu, N. Nishiyama, and S. Arai, “GaInAsP/InP distributed reflector lasers and integration of front power monitor by using lateral quantum confinement effect,” Jpn. J. Appl. Phys., vol. 47, no. 6, pp. 4558-4565, (June 2008).

2. D. Plumwongrot, T. Maruyama, A. Haque, H.i Yagi, K. Miura, Y. Nishimoto, and S. Arai, “Polarization anisotropy of spontaneous emission spectra in GaInAsP/InP quantum-wire structures,” Jpn. J. Appl. Phys., vol. 47, no. 5, pp. 3735-3741, (May 2008).

3. S. Arai and T. Maruyama, “GaInAsP/InP quantum-wire lasers,” [Invited paper] to be published in IEEE J. Select. Topics in Quantum Electron., (2009).

1. D. Plumwongrot, Y. Tamura, Y. Nishimoto, M. Kurokawa, T. Maruyama, N. Nishiyama, and S. Arai, “Length dependencies of in-plane polarizations anisotropy in GaInAsP/InP quantum-wire structures fabricated by dry etching and regrowth process,” OPTO2008 (part of SPIE Photonics West 2008), San Jose (USA), 6902-4, Jan. 2008.

2. D. Plumwongrot, M. Kurokawa, T. Okumura, Y. Nishimoto, T. Maruyama, N. Nishiyama, and S. Arai, “Reduction of RIE Induced Damage on Lasing Properties of GaInAsP/InP DQW Lasers Fabricated by 2-step Growths,” OPTO2008 (part of SPIE Photonics West 2008), 6909-11, San Jose (USA), Jan. 2008.

3. S. Arai, “GaInAsP/InP distributed feedback and distributed reflector lasers with fine wirelike active regions (Invited Paper),” OPTO2008 (part of SPIE Photonics West 2008), San Jose (USA), 6900-6, Jan. 2008.

4. S. Lee, S. M. Ullah, T. Shindo, K. Davis, N. Nishiyama, and S. Arai, “Bit-Error-Rate Measurement of GaInAsP/InP Distributed Reflector Laser with Wirelike Active Regions,” The 20th Indium Phosphide and Related Material (IPRM 2008), MoA2-3, Versaille (France), May 2008.

5. M. Kurokawa, D. Plumwongrot, K. Ozawa, T. Maruyama, N. Nishiyama, and S. Arai, “RIE-Plasma Induced Optical Property Degradation in GaInAsP/InP Quantum-Well Structure,” The 20th Indium Phosphide and Related Materials Conference (IPRM2008), WeP39, Versailles (France), May 2008.

6. S. Lee, K. Davis, T. Shindo, N. Tajima, D. Takahashi, N. Nishiyama, and S. Arai, “Enhancement of Modulation Bandwidth in Distributed Reflector Lasers,” International Nano-Optoelectronics Workshop (iNOW 2008), 1-P15, Tokyo/Saiko/Hayama, Aug. 2008.

7. M. Shirao, R. Yokoyama, Y. Numajiri, M. Asada, N. Nishiyama, and S. Arai, “Direct Modulation of Sub-Teraherz Waves by 1.55-μm Optical Signal,” International Nano-Optoelectronics Workshop (iNOW 2008), 1-P28, Tokyo/Saiko/Hayama, Aug. 2008.

8. M. Kurokawa, D. Plumwongrot, T. Maruyama N. Nishiyama, and S. Arai, “CH4/H2-RIE Induced Optical Property Degradation in GaInAsP/InP Quantum-Well Structures,” International Nano-Optoelectronics Workshop (iNOW 2008), 3-P19, Tokyo/Saiko/Hayama, Aug 2008.

9. T. Shindo, S. Lee, K. Davis, N. Tajima, D. Takahashi, N. Nishiyama, and S. Arai, “A sub-mA Threshold Current Operation of Distributed-Reflector (DR) Laser,” International Nano-Optoelectronic Workshop (iNOW 2008), 4-P20, Tokyo/Saiko/Hayama, Aug. 2008.

10. N. Nishiyama: “InP-Based VCSELs with AlGaInAs/InP DBR and Their Applications,” International Nano-Optoelectronic Workshop (iNOW 2008), 4-P20, Session M2, pp.46-47, Tokyo/Saiko/Hayama, Aug. 2008.

11. S. Arai: “Long wavelength lasers with very fine structures and their applications to photonic integrated circuits,” International Nano-Optoelectronic Workshop (iNOW 2008), Session M3, pp.50-51, Tokyo/Saiko/Hayama, Aug. 2008.

12. M. Shirao, R. Yokoyama, Y. Numajiri, N. Nishiyama, M. Asada, and S. Arai, “Direct Conversion to Sub-THz Signal from 1.55-μm Optical Signal Using Photon-Generated Free-Carriers,” The 21st Annual Meeting of The IEEE Lasers & Electro-Optics Society (LEOS Annual Meeting 2008), TuJ-3, Newport Beach CA (USA), Nov. 2008.

1. Y. Numajiri, R. Yokoyama, M. Shirao, N. Nishiyama, M. Asada, and S. Arai, “Direct Conversion from Optical Signal to Terahertz signal Using Photon Generated Free Carriers,” 「テラヘルツ信号の光生成キャリアによる光信号からの直接変換」、 Technical Report of IEICE, vol. 108, no.369, ED2008-197, pp. 65-70, Sendai (Japan), Dec. 2008.

1. 李承勲、ウラ･サイド･マムド、進藤隆彦、デイビス･カイル･スペンサー、西山伸彦、荒井滋久：「細線状活性層を有する分布反射型レーザの直接変調特性」、the 2008 IEICE General Conference, C-4-29, Kitakyusyu, Mar. 2008.

2. タノーム・プルームウォンロート、小沢浩二、黒川宗高、田村茂雄、丸山武男、西山伸彦、荒井滋久：「低温現像によるGaInAsP/InP量子細線構造の線幅ばらつきの低減」、The 55th Spring Meeting, 2008; The Japan Society of Applied Physics and Related Societies, 28p-E-18, Digest III-p. 1453, Chiba, Mar. 2008.

3. 黒川宗高、タノーム・プルームウォンロート、小沢浩二、丸山武男、西山伸彦、荒井滋久：「GaInAsP/InP 量子井戸構造のRIEプラズマによる PL 強度劣化とアニールによる回復」、The 55th Spring Meeting, 2008; The Japan Society of Applied Physics and Related Societies, 28p-P9-7, Digest III-p. 1465, Chiba, Mar. 2008.

4. 白尾瑞基、今西大輔、西山伸彦、荒井滋久：「長波長帯レーザトランジスタ実現へ向けたベース層の構造設計」、The 69th Autumn Meeting, 2008; The Japan Society of Applied Physics, 2p-P3-7, Digest III-p. 1020, Aichi, Sept. 2008.

5. デイビス・カイル、李承勲、進藤隆彦、田島典明、高橋大佑、西山伸彦、荒井滋久：「自己注入同期による分布反射型(DR)レーザの直接変調帯域の増大」、 The 69th Autumn Meeting, 2008; The Japan Society of Applied Physics, 2p-P3-14, Digest III-p. 1022, Aichi, Sept. 2008.

6. 進藤隆彦、李承勲、デイビス・カイル、田島典明、高橋大佑、西山伸彦、荒井滋久：「位相シフトDFB領域と受動DBR領域を有する分布反射型(DR)レーザの低電流動作」、The 69th Autumn Meeting, 2008; The Japan Society of Applied Physics, 2p-P3-15, Digest III-p. 1023, Aichi, Sept. 2008.

7. 李承勲、田島典明、進藤隆彦、高橋大佑、西山伸彦、荒井滋久：「細線状活性層を有する分布反射型レーザの反射戻り光耐性」、The 2009 IEICE General Conference, C-4-34, Ehime, Mar. 2009.

8. 進藤隆彦、李承勲、田島典明、高橋大佑、西山伸彦、荒井滋久：「細線状活性層を有する分布反射型(DR)レーザの低しきい値・高効率動作」、The 56th Spring Meeting, 2009; The Japan Society of Applied Physics and Related Societies, 1a-G-9, Digest III, Ibaraki, Mar/Apr. 2009.

9. 沼尻祐貴、横山亮、白尾瑞基、西山伸彦、浅田雅洋、荒井滋久：「光生成キャリア変調による光信号からサブテラヘルツ信号への直接変換速度特性」、The 56th Spring Meeting, 2009; The Japan Society of Applied Physics and Related Societies, 31a-P6-6, Digest III, Ibaraki, Mar/Apr. 2009.