1. T. Okumura, T. Maruyama, H. Yonezawa, N. Nishiyama, and S. Arai, "Injection-type GaInAsP/InP/Si Distributed-feedback Laser Directly Bonded on Silicon-on-insulator Substrate," IEEE Photon. Technol. Lett., Vol. 21, No. 5, pp. 283-285, Mar. 2009.

2. K. Inoue, D. Plumwongrot, N. Nishiyama, S. Sakamoto, H. Enomoto, S. Tamura, T. Maruyama, and S. Arai, "Loss Reduction of Si Wire Waveguide Fabricated by Edge-Enhancement Writing for Electron Beam Lithography and Reactive Ion Etching Using Double Layered Resist Mask with C60," Jpn. J. Appl. Phys., Vol. 48, No. 3, pp. 030208-1-030208-3, Mar. 2009.

3. T. Okumura, M. Kurokawa, M. Shirao, D. Kondo, H. Ito, T. Maruyama, N. Nishiyama, and S. Arai, "Lateral Current Injection GaInAsP/InP Laser on Semi-insulating Substrate for Membrane-based Photonic Circuits," Opt. Express, Vol. 17, No. 15, pp. 12564-12570, July 2009.

1. T. Okumura, M. Kurokawa, D. Kondo, H. Ito, N. Nishiyama, and S. Arai, "Lateral Current Injection Type GaInAsP/InP DFB Lasers on SI-InP Substrate," The 21st Int. Conf. on Indium Phosphide and Related Materials (IPRM 2009), Newport Beach, CA, USA, TuB2, May 2009.

2. T. Okumura, M. Kurokawa, H. Ito, D. Kondo, N. Nishiyama, and S. Arai, "Room-Temperature CW Operation of Lateral Current Injection Lasers with Thin Film Lateral Cladding Layers," The 21st Int. Conf. on Indium Phosphide and Related Materials (IPRM 2009), Newport Beach, CA, USA, WP 12, May 2009.

3. N. Nishiyama, T. Maruyama and S. Arai, "III-V/SOI Heterogeneous Photonic Integrated Devices for Optical Interconnection in LSI," [invited] The 21st Int. Conf. on Indium Phosphide and Related Materials (IPRM 2009), Newport Beach, CA, USA, WB1-1, May 2009.

4. H. Enomoto, K. Inoue, T. Okumura, D. H. Nguyen, N. Nishiyama, Y. Atsumi, S. Kondo and S. Arai, "Properties of High Index-Contrast Wired GaInAsP Waveguides with Benzocyclobutene on Si Substrate," The 21st Int. Conf. on Indium Phosphide and Related Materials (IPRM 2009), Newport Beach, CA, USA, ThA1-4, May 2009.

5. Y. Atsumi, N. Nishiyama, H. Enomoto, K. Inoue, S. Arai, "Athermal Wavelength Property of Si-Slot Ring Resonator Embedded with Benzocyclobutene, " The 6th IEEE Int. Conf. on Group IV Photonics (GFP), San Francisco, CA, USA, ThB3, Sept. 2009.

6. H. Ito, T. Okumura, D. Kondo, N. Nishiyama, and S. Arai, "Improved Quantum Efficiency of Lateral Current Injection Type Fabry-Perot Lasers," Int. Symposium on Quantum Nanophotonics and Nanoelectronics, Tokyo, Japan, ThC-4, Nov. 2009.

1. Y. Atsumi, K. Inoue, N. Nishiyama, and S. Arai, "Athermal Wavelength Property of Si-Slot Ring Resonator Embedded with Benzocyclobutene," Technical Meeting of IEICE, SiPH2009-P3, Tokyo, Japan, Nov. 2009.

2. S. Kondo, T. Okumura, R. Osabe, N. Nishiyama, and S. Arai, "Surface Activated Bonding of InP / Si Structure and Its Photoluminescence Characterization," Technical Meeting of IEICE, SiPH2009-P11, Tokyo, Japan, Nov. 2009.

3. T. Okumura, D. Kondo, H. Ito, N. Nishiyama, and S. Arai, "Lateral Current Injection Lasers for Membrane Semiconductor Light Sources toward Optical Interconnection," Technical Meeting of IEICE, SiPH2009-P18, Tokyo, Japan, Nov. 2009.

4. D. Kondo, T. Okumura, H. Ito, S. H. Lee, N. Nishiyama, and S. Arai, "Waveguide Type Lateral Junction Photodiode Toward Membrane Based Photonic Circuit," Technical Meeting of IEICE, SiPH2009-P27, Tokyo, Japan, Nov. 2009.

5. T. Okumura, H. Ito, D. Kondo, N. Nishiyama, and S. Arai, "Continuous Wave Operation of GaInAsP/InP Thin Film Lateral Current Injection Lasers on SI-InP," Technical Report of IEICE, LQE2009-147, pp. 45-50, Tokyo, Japan, Dec. 2009.

6. S. Arai, "Low-power Consumption Lasers for Monolithic Integration," [invited] Global COE International Symposium, A-1, Tokyo, Japan, Mar. 2010.

7. T. Okumura, D. Kondo, H. Ito, S. H. Lee, D. Takahashi, N. Nishiyama, and S. Arai, "Dynamic Characteristics of Lateral Current Injection Laser," Global COE International Symposium, P-8, Tokyo, Japan, Mar. 2010.

8. H. Ito, T. Okumura, D. Kondo, N. Nishiyama, and S. Arai, "Improvement in Quantum Efficiency of Lateral Current Injection Laser," Global COE International Symposium, P-9, Tokyo, Japan, Mar. 2010.

9. S. Kondo, T. Okumura, R. Osabe, N. Nishiyama, and S. Arai, "Investigations of Low Temperature InP/Si Bonding by Surface Activation Process," Global COE International Symposium, P-28, Tokyo, Japan, Mar. 2010.

10. Y. Atsumi, K. Inoue, N. Nishiyama, and S. Arai, "Characteristics of Si Slot Waveguide Embedded with Benzocyclobutene for Athermal Ring Resonator on SOI," Global COE International Symposium, P-31, Tokyo, Japan, Mar. 2010.

11. Y. Maeda, K. Inoue, Y. Atsumi, N. Nishiyama, and S. Arai, "GaInAsP Wire Waveguides on Si Substrate Formed by Wafer Bonding with Benzocyclobutene," Global COE International Symposium, P-32, Tokyo, Japan, Mar. 2010.

12. K. Inoue, Y. Atsumi, N. Nishiyama, S. Tamura, and S. Arai, "Investigation of The Propagation Loss of a-Si Multiple Layer Waveguides," Global COE International Symposium, P-33, Tokyo, Japan, Mar. 2010.

1. 西山伸彦、丸山武男、荒井滋久：「シリコン基板上半導体レーザ・発光デバイスの現状」(依頼講演) The 2009 IEICE General Conf., CI-2-4, Ehime, Japan, Mar. 2009.

2. 奥村忠嗣、黒川宗高、近藤大介、伊藤　瞳、西山伸彦、荒井滋久：「半絶縁性基板上の横方向注入型DFBレーザ」 The 56th Spring Meeting, 2009; The Japan Society of Applied Physics and Related Societies, 1a-G-2, Digest III p1192, Ibaraki, Japan, Mar./Apr. 2009.

3. 奥村忠嗣、黒川宗高、伊藤　瞳、近藤大介、西山伸彦、荒井滋久：「横方向電流注入型ファブリ・ペローレーザの室温連続動作」 The 56th Spring Meeting, 2009; The Japan Society of Applied Physics and Related Societies, 1a-G-2, Digest III p1192, Ibaraki, Japan, Mar./Apr. 2009.

4. 渥美裕樹、西山伸彦、榎本晴基、井上敬太、荒井滋久:「BCB埋め込みSiスロット導波路による波長フィルタの温度無依存化の検討」 The 56th Spring Meeting, 2009; The Japan Society of Applied Physics and Related Societies, 1a-B-12, Digest III, Ibaraki, Japan, Mar./Apr. 2009.

5. 榎本晴基、井上敬太、奥村忠嗣、グェン・ドゥック・ハン、西山伸彦、渥美裕樹、近藤志文、荒井滋久:「Si上BCB貼付型強光閉じ込めGaInAsP細線導波路の特性」 The 56th Spring Meeting, 2009; The Japan Society of Applied Physics and Related Societies, 2P-A-8, Digest III, Ibaraki, Japan, Mar./Apr. 2009.

6. 伊藤　瞳、奥村忠嗣、近藤大介、西山伸彦、荒井滋久：「横方向電流注入型ファブリ・ペローレーザの微分量子効率改善」 The 70th Autumn Meeting, 2009; The Japan Society of Applied Physics, 10p-S-11, Digest III p1070, Toyama, Japan, Sept. 2009.

7. 近藤大介、奥村忠嗣、伊藤　瞳、李　承勲、西山伸彦、荒井滋久：「シリコン上薄膜光回路のための横方向接合導波路型フォトダイオード」 The 70th Autumn Meeting, 2009; The Japan Society of Applied Physics, 10a-S-5, Digest III p1064, Toyama, Japan, Sept. 2009.

8. 荒井滋久、西山伸彦：「Si基板上ハイブリッドIII-V族半導体薄膜光デバイス」(シンポジウム講演) The 70th Autumn Meeting, 2009; The Japan Society of Applied Physics, 9p-TE-6, Digest 0 p89, Toyama, Japan, Sept. 2009.

9. 渥美裕樹、井上敬太、西山伸彦、荒井滋久：「BCB埋め込みSiスロット導波路構造を用いた温度無依存波長フィルタ」 The 2009 IEICE Society Conf., C-3-7, Niigata, Japan, Sept. 2009.

10. 井上敬太、渥美裕樹、西山伸彦、田村茂雄、荒井滋久：「SOI基板上多層a-Si細線導波路の伝搬特性の評価」 The 57th Spring Meeting, 2010; The Japan Society of Applied Physics and Related Societies, 17p-P3-7, Kanagawa, Japan, Mar. 2010.

11. 渥美裕樹、井上敬太、西山伸彦、荒井滋久：「BCB埋め込みSiスロット導波路の光伝搬損失の評価」 The 57th Spring Meeting, 2010; The Japan Society of Applied Physics and Related Societies, 17p-P3-10, Kanagawa, Japan, Mar. 2010.

12. 近藤志文、奥村忠嗣、長部　亮、西山伸彦、荒井滋久：「表面活性化貼付法を用いたInP/Si接合とフォトルミネッセンス特性」 The 57th Spring Meeting, 2010; The Japan Society of Applied Physics and Related Societies, 17p-P3-13, Kanagawa, Japan, Mar. 2010.

13. 奥村忠嗣、近藤大介、伊藤　瞳、李　承勲、高橋大佑、西山伸彦、荒井滋久：「横方向電流注入レーザの変調特性」 The 57th Spring Meeting, 2010; The Japan Society of Applied Physics and Related Societies, 19p-E-5, Kanagawa, Japan, Mar. 2010.

1. S. Arai and T. Maruyama, "GaInAsP/InP Quantum-Wire Lasers," [Invited] IEEE J. Select. Topics in Quantum Electron., Vol. 15, No.3, pp. 731-742, May 2009.

2. T. Shindo, S. Lee, D. Takahashi, N. Tajima, N. Nishiyama, and S. Arai, "Low-Threshold and High-Efficiency Operation of Distributed Reflector Laser With Wirelike Active Regions," IEEE Photon. Technol. Lett., Vol. 21, No. 19, pp. 1414-1416, Sept. 2009.

3. S. Lee, N. Tajima, T. Shindo, D. Takahashi, N. Nishiyama, and S. Arai, "High Optical-Feedback Tolerance of Distributed Reflector Lasers with Wirelike Active Regions for Isolator-Free Operation," IEEE Photon. Technol. Lett., Vol. 21, No. 20, pp. 1529-1531, Oct. 2009.

1. S. Lee, T. Shindo, D. Takahashi, N. Tajima, N. Nishiyama, and S. Arai, "Low-threshold and High-efficiency Operation of Distributed Reflector Laser with Wirelike Active Regions by Reduced Waveguide Loss," The 21st Int. Conf. on Indium Phosphide and Related Materials (IPRM 2009), Newport Beach, CA, USA, TuB2.4, May 2009

2. S. Lee, N. Tajima, T. Shindo, D. Takahashi, N. Nishiyama, and S. Arai, "High Optical Feedback-Tolerance of Distributed Reflector Lasers with Wire-like Active Regions for High Speed Isolator-Free Operation," Conf. on Lasers and Electro Optics/Int. Quantum Electronics Conf. (CLEO/IQEC) 2009, Baltimore, MD, USA, CTuH5, June 2009.

3. T. Amemiya, T. Shindo, D. Takahashi, N. Nishiyama, and S. Arai, "Left-handed Light Controlling Device for Optical Frequency," Int. Symp. on Quantum Nanophotonics and Nanoelectronics (ISQNN-2009), FrE-8, Tokyo, Japan, Nov. 2009.

4. S. Lee, D. Parekh, T. Shindo, W. Yang, P. Guo, D. Takahashi, N. Tajima, N. Nishiyama, C. J. Chang-Hasnain, and S. Arai "Bandwidth Enhancement of Distributed Reflector Lasers at Low Bias Current by Optical Injection Locking," Opt. Fiber Commun. Conf. and National Fiber Optic Eng. Conf. (OFC/NFOEC 2010), San Diego, CA, USA, Poster Session I, JWA37, Mar. 2010.

1. T. Shindo, S. Lee, N. Tajima, D. Takahashi, N. Nishiyama, and S. Arai, "Progress in Distributed-Reflector(DR) Lasers with Wirelke Active Regions," Technical Report of IEICE, LQE2009-3, Vol. 109, No. 49, pp. 13-18, Kanazawa, Japan, May 2009.

2. S. Lee, N. Tajima, T. Shindo, D. Takahashi, N. Nishiyama, and S. Arai "High External Feedback Tolerance of Distributed Reflector Lasers with Wirelike Active Regions," Int. Nano-Optoelectronics Workshop 2009 (i-NOW 2009), Poster Session 5, P115, pp. 349-350, Stockholm, Sweden and Berlin, Germany, Aug. 2009.

3. T. Amemiya, T. Shindo, D. Takahashi, N. Nishiyama, and S. Arai, "Design of left-handed light controlling device for optical frequency," Technical Report of IEICE, LQE2009-169, Vol. 109, No. 353, pp. 19-24, Tokyo, Japan, Dec. 2009.

4. T. Amemiya, T. Shindo, D. Takahashi, N. Nishiyama, and S. Arai, "Demonstration of waveguide optical device with negative-refractive-index layer," Technical Report of IEICE, LQE2009-169, Vol. 109, No. 401, pp.123-128, Kyoto, Japan, Jan. 2010.

5. S. Lee, D. Parekh, T. Shindo, W. Yang, P. Guo, D. Takahashi, N. Tajima, N. Nishiyama, C. J. Chang-Hasnain, and S. Arai, "Optical Injection Locking of Distributed Reflector Lasers with Wirelike Active Regions," Technical Report of IEICE, LQE2009-169, Vol. 109, No. 401, pp. 75-80, Kyoto, Japan, Jan. 2010.

6. Y. Takino, M. Shirao, T. Sato, N. Nishiyama, and S. Arai, "Effects of In-situ Thermal Cleaning for Regrowth Interface Quality of AlGaInAs/InP Buried Heterostructure Lasers by OMVPE," Global COE International Symposium, P-7, Tokyo, Japan, Mar. 2010.

7. T. Shindo, S. H. Lee, N. Tajima, D. Takahashi, N. Nishiyama, and S. Arai, "Low-power Consumption Distributed Reflector (DR) Laser with Wirelike Active Regions," Global COE International Symposium, P-10, Tokyo, Japan, Mar. 2010.

8. S. H. Lee, D. Parek, T. Shindo, W. Yang, P. Guo, D. Takahashi, N. Tajima, N. Nishiyama, C. J. Chang-Hasnain, and S. Arai, "Bandwidth Enhancement of Distributed Reflector Lasers with Wirelike Active Regions by Optical Injection Locking," Global COE International Symposium, P-11, Tokyo, Japan, Mar. 2010.

9. D. Takahashi, S. H. Lee, T. Shindo, N. Tajima, N. Nishiyama, and S. Arai, "Highmesa GaInAsP/InP Lasers Buried in Benzocyclobutene towards High-Speed Distributed Reflector Lasers," Global COE International Symposium, P-12, Tokyo, Japan, Mar. 2010.

10. M. Shirao, S. H. Lee, Y. Takino, T. Sato, N. Nishiyama, and S. Arai, "Theoretical Analysis of a AlGaInAs/InP Long-Wavelength Laser Transistor," Global COE International Symposium, P-13, Tokyo, Japan, Mar. 2010.

1. 李　承勲、田島典明、進藤隆彦、高橋大佑、西山伸彦、荒井滋久：「細線状活性層を有する分布反射型レーザの反射戻り光耐性」 The 2009 IEICE General Conf., C-4-34, Ehime, Japan, Mar. 2009.

2. 進藤隆彦、李　承勲、田島典明、高橋大佑、西山伸彦、荒井 滋久：「細線状活性層を有する分布反射型(DR)レーザの低しきい値・高効率動作」 The 56th Spring Meeting, 2009; The Japan Society of Applied Physics and Related Societies, 1a-G-9, Digest III-p.1194 , Ibaraki, Mar./Apr, 2009.

3. 白尾瑞基、瀧野祐太、李　承勲、西山伸彦、荒井滋久：「レート方程式によるAlGaInAs長波長帯レーザトランジスタの動作解析」 The 70th Autumn Meeting, 2009; The Japan Society of Applied Physics, 2p-S-10, Digest III-p.1069, Toyama, Japan, Sept. 2009.

4. 李　承勲、D. Parekh、進藤隆彦、W. Yang、P. Guo、高橋大佑、西山伸彦、C. J. Chang-Hasnain、荒井滋久：「光注入同期による活性層分離型分布反射型レーザの変調帯域増大」 The 2010 IEICE General Conf., C-4-29, Sendai, Japan, Mar. 2010.

5. 雨宮智宏、進藤隆彦、高橋大佑、西山伸彦、荒井滋久：「メタマテリアルを有するInP導波路型デバイスにおける光周波数領域での磁気応答」 The 57th Spring Meeting, 2010; The Japan Society of Applied Physics and Related Societies, 18p-P6-18, Kanagawa, Japan, Mar. 2010.

6. 瀧野祐太、白尾瑞基、佐藤孝司、西山伸彦、荒井滋久：「AlGaInAs/InP 埋め込みヘテロ構造レーザにおける再成長界面品質のサーマルクリーニング依存性」 The 57th Spring Meeting, 2010; The Japan Society of Applied Physics and Related Societies, 19p-E-4, Kanagawa, Japan, Mar. 2010.

7. 白尾瑞基、西山伸彦、李　承勲、荒井滋久：「AlGaInAs量子井戸活性層を有する長波長帯レーザトランジスタ変調効率の構造依存性」 The 57th Spring Meeting, 2010; The Japan Society of Applied Physics and Related Societies, 19p-E-6, Kanagawa, Japan, Mar. 2010.

1. M. Shirao, Y. Numajiri, R. Yokoyama, N. Nishiyama, M. Asada, and S. Arai, "Preliminary Experiment for Direct Media Conversion to Sub-Terahertz Wave Signal from 1.55-μm Optical Signal Using Photon-generated Free Carriers," Jpn. J. Appl. Phys., Vol. 48, No. 9, pp. 090203-1-3, Sept. 2009.

1. Y. Numajiri, M. Shirao, M. Asada, N. Nishiyama, and S. Arai, "Improvement of Modulation Speed of Semiconductor THz/Optical Direct Media Convertor," Global COE International Symposium, P-23, Tokyo, Japan, Mar. 2010.

1. 沼尻祐貴、横山　亮、白尾瑞基、西山伸彦、浅田雅洋、荒井滋久：「光生成キャリア変調による光信号からサブテラヘルツ信号への直接変換速度特性」 The 56th Spring Meeting, 2009; The Japan Society of Applied Physics and Related Societies, 31a-P6-6, Digest III-p.1160, Ibaraki, Japan, Mar./Apr. 2009.