1. T. Okumura, H. Ito, D. Kondo, N. Nishiyama, and S. Arai, �gContinuous Wave Operation of Thin Film Lateral Current Injection Lasers Grown on Semi-Insulating InP Substrate,�hJpn. J. Appl. Phys., vol. 49, no. 4, pp. 040205-1?040205-3, Apr. 2010.

2. Y. Atsumi, K. Inoue, N. Nishiyama, and S. Arai, �gAthermal Wavelength Characteristics of Si Slot Ring Resonator Embedded with Benzocyclobutene for Optoelectronic Integrated Circuits,�h Jpn. J. Appl. Phys., vol. 49, no. 5, pp. 050206-1-50206-3, May 2010.

3. T. Shindo, T. Okumura, H. Ito, T. Koguchi, D. Takahashi, Y. Atsumi, J. Kang, R. Osabe, T. Amemiya, N. Nishiyama, and S. Arai, �gGaInAsP/InP Lateral-Current-Injection Distributed Feedback Laser with a-Si Surface Grating,�h Opt. Express, vol. 19, no. 3, pp. 1884-1891, Jan. 2011.

4. T. Okumura. D. Kondo, H. Ito, S. H. Lee, T. Amemiya, N. Nishiyama, and S. Arai, �gLateral Junction Waveguide-type Photodiode Grown on Semi-insulating InP Substrate,�h Jpn. J. Appl. Phys., vol. 50, no. 2, pp. 020206-1?020206-3, Feb. 2011.

1. H. Ito, T. Okumura, D. Kondo, N. Nishiyama, and S. Arai, �gThin-Film GaInAsP/InP Lateral Current Injection Type Fabry-Perot Laser - Improved Quantum Efficiency Operation -,�h The 22nd Int. Conf. on Indium Phosphide and Related Materials (IPRM 2010), Takamatsu, Japan, TuA3-5, June 1, 2010.

2. S. Kondo, T. Okumura, R. Osabe, N. Nishiyama, and S. Arai, �gInvestigation of Bonding Strength and Photoluminescence Properties of InP/Si Surface Activated Bonding,�h The 22nd Int. Conf. on Indium Phosphide and Related Materials (IPRM 2010), Takamatsu, Japan, WeP28, June 2, 2010.

3. D. Kondo, T. Okumura, H. Ito, S. H. Lee, T. Amemiya, N. Nishiyama, and S. Arai, �gLateral Junction Waveguide Type Photodiode for Membrane Photonic Circuits,�h The 22nd Int. Conf. on Indium Phosphide and Related Materials (IPRM 2010), Takamatsu, Japan, ThA2-2, June 3, 2010.

4. T. Okumura, D. Kondo, H. Ito, N. Nishiyama, and S. Arai, �gDynamic Characteristics of Lateral Current Injection Laser,�h The 37th International Symposium on Compound Semiconductors (ISCS 2010), Takamatsu, Japan, WeE3-2, June 2, 2010.

5. R. Osabe, T. Okumura, S. Kondo, N. Nishiyama, and S. Arai, �gStabilization on Fabrication of GaInAsP/InP Membrane Structure on SOI waveguide by Surface Activated Bonding,�h The 37th International Symposium on Compound Semiconductors (ISCS 2010), Takamatsu, Japan, FrP23, June 4, 2010.

6. N. Nishiyama and S. Arai, �gCurrent Status of III-V/Si Hybrid Optical Devices,�h 15th OptoElectronics and Communications Conference, (OECC 2010), Sapporo, Japan, Workshop 2-II, p. 10, July 5, 2010.

7. N. Nishiyama and S. Arai, �gLow power consumption semiconductor lasers for optical interconnections�h [Tutorial], 15th OptoElectronics and Communications Conference, (OECC 2010), Sapporo, Japan, 8D-4-1, p. 536, July 8, 2010.

8. S. Arai, and N. Nishiyama, �gMembrane-Type Photonic Devices for Optical Circuits on SOI�h [Invited], 2010 Int. Conf. on Solid State Devices and Materials (SSDM 2010), Tokyo, Japan, D-6-1, Sep. 24, 2010.

9. J. Kang, K. Inoue, Y. Atsumi, N. Nishiyama, and S Arai, �gLoss Measurement of Multiple Layer a-Si Waveguides toward 3D Si-Optical Circuits,�h 2010 Int. Conf. on Solid State Devices and Materials (SSDM 2010), Tokyo, Japan, D-8-2, Sep. 24, 2010.

10. S. Arai, �gMembrane Lasers on Si - Low Power Consumption Lasers for Monolithic Integration,�h Workshop on Semiconductor Lasers, at The 22nd IEEE Int. Semiconductor Laser Conf. (ISLC 2010), Kyoto, Japan, Workshop 1-(4), Sep. 26, 2010.

11. T. Okumura, T. Koguchi, H. Ito, N. Nishiyama, and S. Arai, �gFirst Lasing Operation of Injection Type Membrane GaInAsP DFB Laser With Lateral Current Injection BH Structure,�h The 22nd IEEE Int. Semiconductor Laser Conf. (ISLC 2010), Kyoto, Japan, WA2, Sep. 29, 2010.

12. Y. Atsumi, J. Kang, Y. Maeda, M. Oda, N. Nishiyama, and S. Arai, �gLow-Loss Si-Slot Waveguides and Ring Resonator Embedded with Benzocyclobutene,�h The 23rd Annual Meeting of the IEEE Photonics Society (PHO 2010), Denver, CO, USA, TuP-3, Nov. 9, 2010.

13. T. Shindo, T. Okumura, H. Ito, T. Koguchi, D. Takahashi, Y. Atsumi, J. Kang, R. Osabe, N. Nishiyama, and S. Arai, �gLateral Current Injection Type GaInAsP/InP DFB Laser with a-Si Surface Grating,�h The 23rd Annual Meeting of the IEEE Photonics Society(PHO 2010), Denver, CO, USA, ThR4, Nov. 11, 2010.

14. S. Arai, N. Nishiyama, and T. Okumura, �gMembrane DFB lasers on SOI�h [Invited], Asia Communications and Photonics Conf. and Exhibition 2010 (ACP2010), Shanghai, China, ThF1, Dec. 9, 2010.

15. S. Arai, N. Nishiyama, and T. Okumura, �gLateral Current Injection GaInAsP/InP Llaser for Membrane Based Photonic Circuits�h [Invited], SPIE Photonics West Conference 2011, San Francisco, CA, USA, 7953-06, Jan. 24, 2011.

1. ˆä�ãŒh‘¾�Aˆ­”ü—TŽ÷�A�¼ŽR�L•F�A“c‘º–ΗY�A�rˆäŽ ‹v�F�uSOIŠî”Â�㑽‘wa-Si�×�ü“±”g˜H‚Ì“`”À“Á�«‚Ì•]‰¿�vThe 57th Spring Meeting, The Japan Society of Applied Physics and Related Societies, Hiratsuka, Japan, 17p-P3-7, Mar. 17, 2010.

2. ˆ­”ü—TŽ÷�Aˆä�ãŒh‘¾�A�¼ŽR�L•F�A�rˆäŽ ‹v�F�uBCB–„‚ß�ž‚ÝSiƒXƒ�ƒbƒg“±”g˜H‚ÌŒõ“`”À‘¹Ž¸‚Ì•]‰¿�vThe 57th Spring Meeting, The Japan Society of Applied Physics and Related Societies, Hiratsuka, Japan, 17p-P3-10, Mar. 17, 2010.

3. ‹ß“¡Žu•¶�A‰œ‘º’‰Žk�A’·•”�@—º�A�¼ŽR�L•F�A�rˆäŽ ‹v�F�u•\–ÊŠˆ�«‰»“\•t–@‚ð—p‚¢‚½InP/Si�Ú�‡‚ƃtƒHƒgƒ‹ƒ~ƒlƒbƒZƒ“ƒX“Á�«�v The 57th Spring Meeting, The Japan Society of Applied Physics and Related Societies, Hiratsuka, Japan, 17p-P3-13, Mar. 17, 2010.

4. ‰œ‘º’‰Žk�A‹ß“¡‘å‰î�AˆÉ“¡�@“µ�A—›�@�³ŒM�A�‚‹´‘å—C�A�¼ŽR�L•F�A�rˆäŽ ‹v�F�u‰¡•ûŒü“d—¬’�“üƒŒ�[ƒU‚Ì•Ï’²“Á�«�v The 57th Spring Meeting, The Japan Society of Applied Physics and Related Societies, Hiratsuka, Japan, 19p-E-5, Mar. 19, 2010.

5. ‘O“c‘דÞ�A—›�@’q‰¶�Aˆ­”ü—TŽ÷�A�¼ŽR�L•F�A�rˆäŽ ‹v�A�F�uIII-V‘°”¼“±‘Ì”––ŒŒõ�W�ωñ˜HŽÀŒ»‚ÉŒü‚¯‚½”––Œ•iŽ¿‚̉ü‘P�v The 71st Autumn Meeting, The Japan Society of Applied Physics and Related Societies, Nagasaki, Japan, 14p-G-14, Sep. 14, 2010.

6. ’·•”�@—º�A‰œ‘º’‰Žk�A‹ß“¡Žu•¶�A�¼ŽR�L•F�A�rˆäŽ ‹v�F�u•\–ÊŠˆ�«‰»�Ú�‡–@‚É‚æ‚éSOI“±”g˜H�ãGaInAsP”––Œ�\‘¢‚ÌŒ`�¬�v The 71st Autumn Meeting, The Japan Society of Applied Physics, Nagasaki, Japan, 14p-G-15, Sep. 14, 2010.

7. ˆ­”ü—TŽ÷�A›I�@ú×ûR�A‘O“c‘דÞ�A�¬“c�@Šw�A�¼ŽR�L•F�A�rˆäŽ ‹v�F�uBCB–„‚ß�ž‚݃Xƒ�ƒbƒgƒŠƒ“ƒO‹¤�UŠí‚̒ᑹŽ¸‰»�v The 71st Autumn Meeting, The Japan Society of Applied Physics, Nagasaki, Japan, 14p-G-16, Sep. 14, 2010.

8. �i“¡—²•F�A‰œ‘º’‰Žk�AˆÉ“¡�@“µ�A�¬Œû‹M”V�Aˆ­”ü—TŽ÷�A›Iú×ûR�A’·•”—º�A�¼ŽR�L•F�A�rˆäŽ ‹v�F�ua-Si•\–ʉñ�ÜŠiŽq‚ð—p‚¢‚½‰¡•ûŒü“d—¬’�“üŒ^DFBƒŒ�[ƒU�v The 71st Autumn Meeting, The Japan Society of Applied Physics, Nagasaki, 16p-H-11, Sep. 16, 2010.

9. �¬Œû‹M”V�A‰œ‘º’‰Žk�AˆÉ“¡�@“µ�A�¼ŽR�L•F�A�rˆäŽ ‹v�F�u”¼“±‘Ì”––ŒDFBƒŒ�[ƒU‚Ì“d—¬’�“ü“®�ì�v The 71st Autumn Meeting, The Japan Society of Applied Physics, Nagasaki, Japan, 16p-H-12, Sep. 16, 2010.

10. ˆÉ“¡�@“µ�A‰œ‘º’‰Žk�A—›�@�³ŒM�A�i“¡—²•F�A�¼ŽR�L•F�A�rˆäŽ ‹v�F�uSOIŠî”Â�ã�W�Ï“ñ�d“±”g˜H�\‘¢ƒŒ�[ƒU‚Ì—�˜_ŒŸ“¢�v The 71st Autumn Meeting, 2010, The Japan Society of Applied Physics, Nagasaki, Japan, 16p-H-13, 16, Sep. 2010.

11. �¼ŽR�L•F�A‰œ‘º’‰Žk�A�rˆäŽ ‹v�F�uSi�ESOIŠî”Â�ヌ�[ƒU‘fŽq‚ÌŒ»�ó�v [�µ‘Ò�u‰‰] ƒŒ�[ƒU�[Šw‰ïŠw�p�u‰‰‰ï‘æ31‰ñ”NŽŸ‘å‰ï, Tokyo, Japan, 10pV5, Jan. 10, 2011.

12. �¼ŽR�L•F�A�rˆäŽ ‹v�F�u‘½‘wŒõ‰ñ˜H�\‘¢ŽÀŒ»‚Ì‚½‚߂َ̈íŠî”Â�Ï‘w‹Z�p‚ƃfƒoƒCƒX“Á�«�vThe 2011 IEICE General conf., Tokyo, Japan, CI-1-6, Mar. 14, 2011.

13. ˆ­”ü—TŽ÷�A�¬“c�@Šw�A›I�@ú×ûR�A�¼ŽR�L•F�A�rˆäŽ ‹v�F�u•��LƒMƒƒƒbƒv�\‘¢‚ð—L‚·‚éBCB –„‚ß�ž‚݉·“x–³ˆË‘¶SiƒXƒ�ƒbƒgMZI�v The 58th Spring Meeting, The Japan Society of Applied Physics and Related Societies, Atsugi, Japan, 24a-KB-8, Mar. 24, 2011.

14. ›I�@ú×ûR�Aˆ­”ü—TŽ÷�A�¼ŽR�L•F�A�rˆäŽ ‹v�F�u‘½‘w‰»‚³‚ꂽƒAƒ‚ƒ‹ƒtƒ@ƒXƒVƒŠƒRƒ“�×�ü“±”g˜H‚̒ᑹŽ¸“`”À“Á�«�v The 58th Spring Meeting, The Japan Society of Applied Physics and Related Societies, Atsugi, Japan, 24a-KB-9, Mar. 24, 2011.

15. �i“¡—²•F�A‰œ‘º’‰Žk�A“ñŒ©�[‹P�A’·•”�@—º�AˆÉ“¡�@“µ�A�¬Œû‹M”V�A‰J‹{’q�G�A�¼ŽR�L•F�A�rˆäŽ ‹v�F�u‰¡•ûŒü“d—¬’�“üŒ^ƒŒ�[ƒU‚É‚¨‚¯‚é”­�U“Á�«‚̃Xƒgƒ‰ƒCƒv•�ˆË‘¶�«�v The 58th Spring Meeting, The Japan Society of Applied Physics and Related Societies, Atsugi, 26a-P5-16, Mar. 26, 2011.

16. “ñŒ©�[‹P�A�i“¡—²•F�A‰œ‘º’‰Žk�A’·•”�@—º�AˆÉ“¡�@“µ�A�¬Œû‹M”V�A‰J‹{’q�G�A�¼ŽR�L•F�A�rˆäŽ ‹v�F�u�×�ü�óŠˆ�«‘w‚ð—L‚·‚éGaInAsP/InP‰¡•ûŒü“d—¬’�“üŒ^DFBƒŒ�[ƒU�v The 58th Spring Meeting, The Japan Society of Applied Physics and Related Societies, Atsugi, 26a-P5-17, Mar. 26, 2011.

1. �¼ŽR�L•F�A�uƒVƒŠƒRƒ“/ III-V‘°”¼“±‘̃nƒCƒuƒŠƒbƒh�W�ÏŒõƒfƒoƒCƒX�vŒŽŠ§ OPTRONICS, 2011”N2ŒŽ�†, pp. 117-120, Feb. 2011.

1. S. H. Lee, D. Parekh, T. Shindo, W. Yang, P. Guo, D. Takahashi, N. Nishiyama, C. J. Chang-Hasnain, and S. Arai, �gBandwidth enhancement of injection-locked distributed reflector lasers with wirelike active regions,�h Opt. Express, vol. 18, no. 16, pp. 16370-16378, Aug. 2010.

2. M. Shirao, S. Lee, N. Nishiyama, S. Arai, �gLarge-Signal Analysis of a Transistor Laser,�h IEEE J. Quantum Electron., vol. 47, no. 3, pp. 359-367, Mar. 2011.

1. S. H. Lee, D. Parekh, T. Shindo, W. Yang, P. Guo, D. Takahashi, N. Tajima, N. Nishiyama, C. J. Chang-Hasnain, and S. Arai, �gBandwidth Enhancement of Distributed Reflector Lasers at Low Bias Current by Optical Injection Locking,�h Opt. Fiber Commun. Conf. and National Fiber Optic Eng. Conf. (OFC-NFOEC 2010), San Diego, CA, USA, Poster session I, JWA37, Mar. 24, 2010.

2. M. Shirao, N. Nishiyama, S. Lee, and S. Arai, �gLarge Signal Analysis of AlGaInAs/InP Laser Transistor,�h Conference on Lasers and Electro Optics/International Quantum Electronics Conference (CLEO/IQEC) 2010, San Jose, CA, USA, CMY 7, May 17, 2010.

3. Y. Takino, M. Shirao, T. Sato, N. Nishiyama, and S. Arai, �gInvestigation of Regrowth Interface Quality of AlGaInAs/InP Buried Heterostructure Lasers,�h The 22nd Int. Conf. on Indium Phosphide and Related Materials (IPRM 2010), Takamatsu, Japan, WeP27, June 2, 2010.

4. K. Shinno, S. H. Lee, T. Shindo, D. Takahashi, N. Tajima, N. Nishiyama, and S. Arai, �gDirect Measurements of Characteristics of GaInAsP/InP Bragg Gratings with Periodically Etched Quantum Wells,�h The 37th Int. Sym. on Compound Semiconductors (ISCS 2010), Takamatsu, Japan, FrP21, June 4, 2010.

1. —›�@�³ŒM�AD. Parekh�A�i“¡—²•F�AW. Yang�AP. Guo�A�‚‹´‘å—C�A�¼ŽR�L•F�AC. J. Chang-Hasnain�A�rˆäŽ ‹v�F�uŒõ’�“ü“¯Šú‚É‚æ‚銈�«‘w•ª—£Œ^•ª•z”½ŽËŒ^ƒŒ�[ƒU‚Ì•Ï’²‘шæ‘�‘å�vThe 2010 IEICE General conf., Sendai, Japan, C-4-29, Mar. 2, 2010.

2. ‘ë–ì—S‘¾�A”’”ö��Šî�A�²“¡�FŽi�A�¼ŽR�L•F�A�rˆäŽ ‹v�F�uAlGaInAs/InP –„‚ß�ž‚݃wƒeƒ��\‘¢ƒŒ�[ƒU‚É‚¨‚¯‚é�Ä�¬’·ŠE–Ê•iŽ¿‚̃T�[ƒ}ƒ‹ƒNƒŠ�[ƒjƒ“ƒOˆË‘¶�«�vThe 57th Spring Meeting, The Japan Society of Applied Physics and Related Societies, Hiratsuka, Japan, 19p-E-4, Mar. 19, 2010.

3. ”’”ö��Šî�A�¼ŽR�L•F�A—›�@�³ŒM�A�rˆäŽ ‹v�F�uAlGaInAs—ÊŽqˆäŒËŠˆ�«‘w‚ð—L‚·‚é’·”g’·‘уŒ�[ƒUƒgƒ‰ƒ“ƒWƒXƒ^•Ï’²Œø—¦‚Ì�\‘¢ˆË‘¶�«�v The 57th Spring Meeting, The Japan Society of Applied Physics, Hiratsuka, Japan, 19p-E-6, Mar. 19, 2010.

4. �‚‹´‘å—C�A—›�@�³ŒM�A�M–ìŒ\—S�A�i“¡—²•F�A�¼ŽR�L•F�A�rˆäŽ ‹v�F�uŠˆ�«‘w•ª—£Œ^•ª•z”½ŽËŒ^ƒŒ�[ƒU‚Ì•Ï’²“Á�«‚Ì�\‘¢ˆË‘¶�«�v The 71st Autumn Meeting, The Japan Society of Applied Physics and Related Societies, Nagasaki, Japan, 16p-H-9, Sep. 16, 2010.

5. �M–ìŒ\—S�A—›�@�³ŒM�A�i“¡—²•F�A�‚‹´‘å—C�A�¼ŽR�L•F�A�rˆäŽ ‹v�F�uGaInAsP/InP�×�ü�óŠˆ�«‘w‚ð—L‚·‚éDBR‚Ì“§‰ß”½ŽËƒXƒyƒNƒgƒ‹“Á�«�v The 71st Autumn Meeting, The Japan Society of Applied Physics and Related Societies, Nagasaki, Japan, 16p-H-10, Sep. 16, 2010.

6. ‘ë–ì—S‘¾�A”’”ö��Šî�A�²“¡�FŽi�A�¼ŽR�L•F�A�rˆäŽ ‹v�F�uAlGaInAs/InP –„‚ß�ž‚݃wƒeƒ��\‘¢ƒŒ�[ƒU‚É‚¨‚¯‚éƒT�[ƒ}ƒ‹ƒNƒŠ�[ƒjƒ“ƒO’†•µˆÍ‹C‚Ì�Ä�¬’·ŠE–Ê•iŽ¿‚ɑ΂·‚é‰e‹¿�v The 71st Autumn Meeting, The Japan Society of Applied Physics and Related Societies, Nagasaki, Japan, 19p-H-14, Sep. 19, 2010.

7. �‚‹´‘å—C�A—›�@�³ŒM�A�M–ìŒ\—S�A�i“¡—²•F�A�¼ŽR�L•F�A�rˆäŽ ‹v�F�u�×�ü�óŠˆ�«‘w‚ð—L‚·‚镪•z”½ŽËŒ^ƒŒ�[ƒU‚Ì•Ï’²‘шæŠg‘å‚Æ10Gbit/s’á�Á”ï“d—Í“®�ì�v The 2011 IEICE General conf., Tokyo, Japan, C-4-17, Mar. 16, 2011.

8. �²“¡�FŽi�A”’”ö��Šî�A‘ë–ì—S‘¾�A�¼ŽR�L•F�A�rˆäŽ ‹v�F�u1.3-ƒÊm‘Ñpnp-AlGaInAs/InPƒŒ�[ƒUƒgƒ‰ƒ“ƒWƒXƒ^‚ÌŽº‰·˜A‘±“®�ì�v The 58th Spring Meeting, The Japan Society of Applied Physics and Related Societies, Atsugi, Japan, 26a-P5-14, Mar. 26, 2011.

9. �²“¡Œ›–¾�A‘ë–ì—S‘¾�A”’”ö��Šî�A�²“¡�FŽi�A�¼ŽR�L•F�A�rˆäŽ ‹v�F�uAlGaInAs/InP –„‚ß�ž‚݃wƒeƒ��\‘¢ƒŒ�[ƒU‚É‚¨‚¯‚éƒT�[ƒ}ƒ‹ƒNƒŠ�[ƒjƒ“ƒO’†•µˆÍ‹C‚Ì�Ä�¬’·ŠE–Ê•iŽ¿‚ɑ΂·‚é‰e‹¿�vThe 58th Spring Meeting, The Japan Society of Applied Physics and Related Societies, Atsugi, Japan, 26a-P5-15, Mar. 26, 2011.

10. ”’”ö��Šî�A�¼ŽR�L•F�A—›�@�³ŒM�A�rˆäŽ ‹v�F�u3’[Žq‚ð—L‚·‚éƒwƒeƒ��Ú�‡ƒoƒCƒ|�[ƒ‰ƒgƒ‰ƒ“ƒWƒXƒ^Œ^SOA‚Ì�”’l‰ð�Í�v The 58th Spring Meeting, The Japan Society of Applied Physics and Related Societies, Atsugi, Japan, 27a-P8-10, Mar. 27, 2011.

1. S. H. Lee, D. Parekh, T. Shindo, W. Yang, P. Guo, D. Takahashi, N. Tajima, N. Nishiyama, C. J. Chang-Hasnain, and S. Arai, �gOptical Injection Locking of Distributed Reflector Lasers with Wirelike Active Regions,�h Technical Report of IEICE, Kyoto, Japan, LQE2009-169, vol. 109, no. 401, pp. 75-80, Jan. 28, 2010.

1. T. Amemiya, T. Shindo, D. Takahashi, N. Nishiyama, and S. Arai, �gMagnetic Interaction at Optical Frequencies in InP-based Waveguide Device with Metamaterial,�h IEEE J. Quantum. Electron., vol. 47, no. 5, pp. 736-744, May 2011

1. T. Amemiya, T. Shindo, D. Takahashi, N. Nishiyama, and S. Arai, �gMagnetic Interaction at Optical Frequencies in InP-based Waveguide Device Combined with Metamaterial,�h Conference on Lasers and Electro Optics/International Quantum Electronics Conference (CLEO/IQEC) 2010, San Jose, CA, USA, CFB1, May 21, 2010.

2. T. Amemiya, T. Shindo, D. Takahashi, N. Nishiyama, and S. Arai, �gAll-optical Switch Consisting of Multimode Interferometer Combined with Metamaterials: Device Design,�h The 22nd Int. Conf. on Indium Phosphide and Related Materials (IPRM 2010), Takamatsu, Japan, WeP-60, June 2, 2010.

3. T. Amemiya, T. Shindo, D. Takahashi, N. Nishiyama, and S. Arai, �gMetamaterial-based Control of Permeability in GaInAsP/InP Multimode-Interferometers,�h The 23rd Annual Meeting of the IEEE Photonics Society (PHO 2010), Denver, CO, USA, WM3, Nov. 10, 2010.

1. ‰J‹{’q�G�A�i“¡—²•F�A�‚‹´‘å—C�A�¼ŽR�L•F�A�rˆäŽ ‹v�F�uƒ�ƒ^ƒ}ƒeƒŠƒAƒ‹‚ð—L‚·‚éInP“±”g˜HŒ^ƒfƒoƒCƒX‚É‚¨‚¯‚éŒõŽü”g�”—̈æ‚Å‚ÌŽ¥‹C‰ž“š�v The 57th Spring Meeting, The Japan Society of Applied Physics and Related Societies, Hiratsuka, Japan, 18p-P6-18, Mar. 18, 2010.

2. ‰J‹{’q�G�A�i“¡—²•F�A�‚‹´‘å—C�A�¼ŽR�L•F�A�rˆäŽ ‹v�F�uGaInAsP/InP MMI‚ƃ�ƒ^ƒ}ƒeƒŠƒAƒ‹—Z�‡‘fŽq‚É‚¨‚¯‚铧Ž¥—¦•Ï‰»‚ÌŠÏ‘ª�v The 71st Autumn Meeting, The Japan Society of Applied Physics, Nagasaki, Japan, 14a-G-6, Sep. 14, 2010.

3. ‰J‹{’q�G�A�i“¡—²•F�A�‚‹´‘å—C�A–¾‰ê�¹Žœ�A�¼ŽR�L•F�A�rˆäŽ ‹v�F�u‹à‘®‘¤•Ç‘w‚ð—L‚·‚éƒvƒ‰ƒYƒ‚ƒjƒbƒNDFB ƒŒ�[ƒU‚Ì—�˜_‰ð�Í�v The 58th Spring Meeting, The Japan Society of Applied Physics and Related Societies, Atsugi, Japan, 26a-P5-13, Mar. 26, 2011.

4. –¾‰ê�¹Žœ�A‰J‹{’q�G�A�Î�ì�@“Ä�A�¼ŽR�L•F�A“c’†‘ñ’j�A�rˆäŽ ‹v�F�uIII-V ‰»�‡•¨”¼“±‘̂̃LƒƒƒŠƒA‚ð—p‚¢‚½ƒ�ƒ^ƒ}ƒeƒŠƒAƒ‹‚Ì‹¤�UŽü”g�”•Ï‰»�vThe 58th Spring Meeting, The Japan Society of Applied Physics and Related Societies, Atsugi, Japan, 27p-KB-1, Mar. 27, 2011.

1. T. Amemiya, T. Shindo, D. Takahashi, N. Nishiyama, and S. Arai, �gMagnetic Interaction at Optical Frequencies in InP-based Waveguide Device with Metamaterial,�h Technical Report of IEICE, Kyoto, Japan, PN2009-58, pp. 123-128, Jan. 28, 2010.

2. T. Amemiya, T. Shindo, D. Takahashi, S. Myoga, N. Nishiyama, and S. Arai, �gMeta-photonic device ~ possibility of permeability control in semiconductor-based photonic device combined with metamaterial ~,�h Technical Report of IEICE, Kagoshima, Japan, PN2010-64, pp. 45-48, Feb. 28, 2011.