LIST OF REPORT

 

Low Dimensional Quantum Structure Lasers

 

Journal Papers

 

1.         M. Nakamura, N. Nunoya, H. Yasumoto, M. Morshed, K. Fukuda, S. Tamura and S. Arai, “Very Low Threshold Current Density Operation of 1.5 mm DFB Lasers with Wire-Like Active Regions,” Electron. Lett., vol. 36, no. 7, pp.639-640, Apr. 2000.

2.         N. Nunoya, M. Nakamura, H. Yasumoto, S. Tamura and S. Arai, “GaInAsP/InP Multiple-Layered Quantum-Wire Lasers Fabricated by CH4/H2 Reactive-Ion-Etching,” Jpn. J. Appl. Phys., vol. 39, no. 6A, pp.3410-3415, June 2000.

3.         N. Nunoya, M. Nakamura, H. Yasumoto, M. Morshed, K. Fukuda, S. Tamura and S. Arai, “Sub-Milliampere Operation of 1.55 mm Wavelength High Index-Coupled Buried Heterostructure Distributed Feedback Lasers,” Electron. Lett., vol. 36, no. 14, pp. 1213-1214, July 2000.

4.         N. Nunoya, H. Yasumoto, H. Midorikawa, S. Tamura and S. Arai, “Low Threshold Current Density Operation of GaInAsP/InP Lasers with Strain-Compensated Multiple-Layered Wirelike Active Regions,” Jpn. J. Appl. Phys., vol. 39, no. 10B, pp. L1042-L1045, Oct. 2000.

5.         N. Nunoya, M. Nakamura, M. Morshed, S. Tamura and S. Arai, “High-Performance 1.55 mm Wavelength GaInAsP/InP Distributed Feedback Lasers with Wirelike Active Regions,” to be published in IEEE J. Select. Topics in Quantum Electron, 2001.

 

Review Paper

 

1.       Y. Suematsu and S. Arai, “Single-Mode Semiconductor Lasers for Long-Wavelength Optical Fiber Communications and Dynamics of Semiconductor Lasers,” IEEE J. Select. Topics in Quantum Electron, vol. 6, no. 6, pp. 1436-1449, Nov./Dec. 2000.

 

International Conferences

 

1.       S. Arai, N. Nunoya, M. Nakamura, H. Yasumoto and S. Arai, “1.5 mm Wavelength GaInAsP/InP Low Threshold Current Lasers by Low-Damage CH4/H2-RIE and OMVPE Regrowth,” Int. Symposium on Ultra-Parallel Optoelectronics (30th Precision & Intelligence Lab. Symposium), C-2, pp.27-28, Kawasaki (Japan), Mar. 2000.

2.       N. Nunoya, M. Nakamura, H. Yasumoto, M. Morshed, K. Fukuda, S. Tamura and S. Arai, “1.5 mm GaInAsP/InP Double-Quantum-Well DFB Lasers with Deeply Etched Active Regions,” The 12th Int’l Conf. on Indium Phosphide and Related Materials (IPRM’2000), TuA2.3, pp. 270-273, Williamsburg (USA), May 2000.

3.       H. Yasumoto, N. Nunoya, H. Midorikawa, S. Tamura and S. Arai, “1.5 mm Wavelength Strain-Compensated GaInAsP/InP Wirelike Laser by CH4/H2 Reactive Ion Etching,” The 12th Int. Conf. on Indium Phosphide and Related Materials (IPRM’2000), WA3.2, pp. 498-501, Williamsburg (USA), May 2000.

4.       N. Nunoya, M. Nakamura, H. Yasumoto, M. Morshed, K. Fukuda, S. Tamura and S. Arai, “Submilliampere Operation of 1.55 mm GaInAsP/InP DFB Lasers with Deeply Etched Active Regions,” The 5th Optoelectron. and Commun. Conf. (OECC’2000), 11C1-2, pp. 46-47, Chiba (Japan), July 2000.

5.       S. Arai, “Low-Damage Fabrication of GaInAsP/InP Fine-Structures for High Performance Lasers,” 4th International Workshop of the Canadian - European Research Initiative on Nanostructures (CERION), (Invited), Würzburg Univ. (Germany), July 2000

6.       S. Arai, H. Yasumoto, N. Nunoya, H. Midorikawa, and S. Tamura, “Low-Damage GaInAsP/InP Fine Structure Lasers by CH4/H2-RIE and OMVPE Regrowth,” Int. Symposium on Formation, Physics and Device Application of Quantum Dot Structures (QDS’00), Th1-13, p. 206, Sapporo (Japan), Sept. 2000.

7.       N. Nunoya, M. Morshed, M. Nakamura, S. Tamura and S. Arai, “High Single-Mode Yield 1.55 mm GaInAsP/InP BH-DFB Lasers with Periodic Wirelike Active Regions,” The 17th IEEE Int’l Semicon. Laser Conf., TuB1, pp. 45-46, Monterey (USA), Sept. 2000.

8.       N. Nunoya, M. Morshed, S. Tamura and S. Arai, “High Performance Operation of Gain-Matched DFB Lasers,” The 7th Int’l Symposium on Quantum Effect Electronics, 7, pp.25-28, Meguro (Japan), Nov. 2000.

9.       H. Midorikawa, N. Nunoya, K. Muranushi, S. Tamura and S. Arai, “Low-Damage Etched/Regrown Interfaces of GaInAsP/InP Wirelike Laser with Strain-Compensated MQW Structure,” to be presented in The 13th Int’l Conf. on Indium Phosphide and Related Materials (IPRM’01), TuB2-2, Nara (Japan), May 2001.

 

Domestic Conferences

 

1.         H. Yasumoto, N. Nunoya, H. Midorikawa, S. Tamura and S. Arai, “Low Threshold Operation of Strain-Compensated GaInAsP/InP Multiple-Layered Wire Laser,” ｢GaInAsP/InP歪補償多層細線レーザの低しきい値動作｣ Nat. Conv. Res. of Japan Soc. Appl. Phys., 30a-N-11, Digest III -p.1159, Tokyo, Mar. 2000.

2.         M. Nakamura, N. Nunoya, M. Morshed, H. Yasumoto, S. Tamura and S. Arai, “Wire Width Dependences of Threshold Current for 2QW DFB Lasers with Wirelike Active Region,” ｢活性層分離型2層DFBレーザのしきい値電流の細線幅依存性｣ Nat. Conv. Res. of Japan Soc. Appl. Phys., 30p-N-1, Digest III -p.1159, Tokyo, Mar. 2000.

3.         N. Nunoya, M. Nakamura, K. Fukuda, M. Morshed, S. Tamura and S. Arai, “Submilliampere Operation of BH-DFB Laser with Wirelike Active Region,” ｢活性層分離型DFBレーザのサブミリアンペア動作｣ Nat. Conv. Res. of Japan Soc. Appl. Phys., 30p-N-2, Digest III -p.1159, Tokyo, Mar. 2000.

4.         M. Morshed, N. Nunoya and S. Arai, “Investigation of Single-Mode Characteristics of DFB Lasers with Wirelike Active Regions,” ｢活性層分離型2層DFBレーザの単一モード特性に関する検討｣ Nat. Conv. Res. of Japan Soc. Appl. Phys., 6p-R-6, Digest III -p.994, Sapporo, Sep. 2000.

5.         N, Nunoya, M. Morshed, S. Tamura and S. Arai, “Single-Mode Characteristics of GaInAsP/InP DQW BH-DFB Laser with Wirelike Active Regions,” ｢GaInAsP/InP活性層分離型2層BH-DFBレーザの単一モード特性｣ Nat. Conv. Res. of Japan Soc. Appl. Phys., 6p-R-7, Digest III -p.994, Sapporo, Sep. 2000.

6.         M. Midorikawa, N. Nunoya, K. Muranushi, S. Tamura and S. Arai, “Temperature Dependence of Spontaneous Emission Efficiency in Strain-Compensated GaInAsP/InP Wirelike Laser,” ｢GaInAsP/InP歪補償細線レーザの自然放出光効率の温度依存性｣ Nat. Conv. Res. of Japan Soc. Appl. Phys., 7a-R-6, Digest III -p.1000, Sapporo, Sep. 2000.

7.         K. Muranushi, H. Midorikawa, N. Nunoya, S. Tamura, B. Chen and S. Arai, “Temperature Dependence of Threshold Current in Strain-Compensated GaInAsP/InP Wirelike Laser,” ｢GaInAsP/InP歪補償細線レーザにおけるしきい値電流の温度特性｣ Nat. Conv. Res. of Japan Soc. Appl. Phys., 30a-ZS-1, Tokyo, Mar. 2001.

8.         H. Midorikawa, N. Nunoya, K. Nuranushi, B. Chen and S. Arai, “Threshold Reduction by Thin InP Barrier in Regrowth Process of GaInAsP/InP MQW Laser,” ｢再成長プロセスにおけるInP障壁薄層化によるGaInAsP/InP MQWレーザの低閾値動作｣ Nat. Conv. Res. of Japan Soc. Appl. Phys., 30a-ZS-2, Tokyo, Mar. 2001.

9.         M. Morshed, N. Nunoya, K. Ohira, J. Wiedmann and S. Arai, “Improvement of Single-Mode Characteristics of DFB Lasers with Gain-Matching Effect,” ｢活性層分離型DFBレーザの利得整合効果による単一モード性向上｣ Nat. Conv. Res. of Japan Soc. Appl. Phys., 30a-ZS-5, Tokyo, Mar. 2001.

10.     N. Nunoya, M. Morshed, K. Ohira, S. Tamura, B. Chen and S. Arai, “Fabrication of GaInAsP/InP Phase Shift DFB Laser with Wirelike Active Regions,” ｢GaInAsP/InP位相シフト活性層分離型DFBレーザの試作｣ Nat. Conv. Res. of Japan Soc. Appl. Phys., 30a-ZS-6, Tokyo, Mar. 2001.

 

New Types of Semiconductor Lasers for Photonic Integration

 

Journal Papers

 

1.         J. Wiedmann, M. M. Raj, Y. Saka, S. Tamura and S. Arai, “Singlemode Operation of Deeply Etched Coupled Cavity Laser with DBR Facet,” Electron. Lett., vol. 36, no. 14, pp.1211-1212, July 2000.

2.         M. M. Raj, N. Serizawa, J. Wiedmann and S. Arai, “Theoretical Analysis of GaInAsP/InP Multiple Micro-Cavity Laser,” Jpn. J. Appl. Phys., vol. 39, no. 10, pp.5847-5854, Oct. 2000.

3.         M. M. Raj, J. Wiedmann, Y. Saka, K. Ebihara and S. Arai, “Highly Uniform 1.5 mm Wavelength Deeply Etched Semiconductor/Benzocyclobutene Distributed Bragg Reflector Lasers,” Jpn. J. Appl. Phys., vol. 39, no. 12B, pp.L1297-L1299, Dec. 2000.

4.         M. M. Raj, J. Wiedmann, S. Toyoshima, Y. Saka, K. Ebihara and S. Arai, “High-Reflectivity Semiconductor/Benzocyclobutene Bragg Reflector Mirrors for GaInAsP/InP Lasers” to be published in Jpn. J. Appl. Phys, vol.40, no. 4A, Apr. 2001.

 

International Conferences

 

1.       M. M. Raj, Y. Saka, J. Wiedmann, S. Tamura and S. Arai, “Low Threshold 1.5 mm Wavelength GaInAsP/InP Lasers with Semiconductor/Benzocyclobutene DBR Structure,” Int. Symposium on Ultra-Parallel Optoelectronics (30th Precision & Intelligence Lab. Symposium), P2, pp.97-98, Kawasaki (Japan), Mar. 2000.

2.       M. M. Raj, J. Wiedmann, Y. Saka, K. Ebihara, K. Matsui, and S. Arai, “Highly Uniform 1.55 mm Wavelength Lasers with Deeply Etched semiconductor/ Benzocyclobutene DBR,” The 12th Int’l Conf. on Indium Phosphide and Related Materials (IPRM’2000), WP2.23, pp.427-430, Williamsburg (USA), May 2000.

3.       J. Wiedmann, M. M. Raj, Y. Saka, K. Ebihara, A. Umeshima, S. Tamura, and S. Arai, “Deeply Etched Coupled Cavity Laser with DBR Facet for Low Threshold and Single Mode Operation,” The 5th Optoelectron. and Commun. Conf. (OECC’2000), 11C1-5, pp. 52-53, Chiba (Japan), July 2000.

4.       S. Arai M. M. Raj and J. Wiedmann, “Multiple-Reflector Lasers for Photonic Integrations,” The 13th IEEE Lasers and Electro-Optics Society Meeting (LEOS’00), WM3 (Invited), pp. 502-503, Peurto Rico (USA), Nov. 2000.

5.       J. Wiedmann, K. Ebihara, H.-C. Kim, K. Matsui, S. Tamura, B. Chen and S. Arai, “Deeply Etched 1.55 mm Wavelength Distributed-Reflector Lasers with Vertical Grating,” to be presented in The 13th Int’l Conf. on Indium Phosphide and Related Materials (IPRM’01), TuA1-3, Nara (Japan), May 2001.

 

Meeting Reports

 

1.       M. M. Raj, J. Wiedmann, Y. Saka, K. Ebihara, K. Matsui, S. Tamura and S. Arai, “1.55 mm Wavelength Deeply Etched Semiconductor/Benzocyclobutene DBR Lasers,” Technical Report of IEICE, OPE2000-7 (2000-05), pp. 37-42, Tokyo (Japan), May 2000.

2.       J. Wiedmann, M. M. Raj, K. Ebihara, K. Matsui, S. Tamura and S. Arai, “Design and Development of 1.55 mm Single-Mode Semiconductor Lasers Consisting of Deeply Etched Grooves Buried with Benzocyclobutene,” Technical Report of IEICE, OME2000-118, OPE2000-70 (2000-10), pp.19-24, Tokyo (Japan), Oct. 2000.

 

Domestic Conferences

 

1.         M. M. Raj, Y. Saka, K. Ebihara and S. Arai, “Low Threshold and High Efficiency Operation of 1.5 mm Wavelength Semiconductor/BCB DBR Lasers,” ｢1.5mm波長帯半導体/BCB DBRレーザの低しきい値･高効率動作｣ Nat. Conv. Res. of Japan Soc. Appl. Phys., 30p-N-8, Digest III -p.1161, Tokyo, Mar.2000.

2.         J. Wiedmann, M. M. Raj, Y. Saka, S. Tamura and S. Arai, “Single-Mode Operation of Deeply Etched DBR Lasers with Multiple-Cavities,” ｢多重共振器を有するDBRレーザの単一波長動作｣ Nat. Conv. Res. of Japan Soc. Appl. Phys., 30p-N-9, Digest III -p.1162, Tokyo, Mar. 2000.

3.         Y. Saka, K. Ebihara, M. M. Raj, J. Wiedmann and S. Arai, “Double Sided DBR Laser with BCB/Semiconductor Bragg Reflector,” ｢両端にBCB/半導体反射鏡を有するDBRレーザ｣ Nat. Conv. Res. of Japan Soc. Appl. Phys., 30p-N-10, Digest III -p.1162, Tokyo, Mar. 2000.

4.         K. Ebihara, J. Wiedmann, M. M. Raj and S. Arai, “Design of Front Facet Reflector of Semiconductor/BCB DBR Lasers,” ｢短共振器半導体/BCB DBRレーザの前端面反射器の設計｣ Nat. Conv. Res. of Japan Soc. Appl. Phys., 6p-R-2, Digest III -p.993, Sapporo, Sep. 2000.

5.         J. Wiedmann, M. M. Raj, K. Ebihara, K. Matsui and S. Arai, “Deeply Etched Distributed Reflector (DR) Lasers with Vertical DFB Grating,” ｢垂直DFBグレーティングを用いた分布反射形(DR)レーザ｣ Nat. Conv. Res. of Japan Soc. Appl. Phys., 6p-R-4, Digest III -p.993, Sapporo, Sep. 2000.

6.         J. Wiedmann, K. Ebihara, M. Ohta, H.-C. Kim, B. Chen, K. Matsui, S. Tamura and S. Arai, “Low Threshold Current Operation of Distributed Reflector (DR) Lasers with Vertical Grating,” ｢垂直回折格子を用いた分布反射形(DR)レーザの低電流動作｣ Nat. Conv. Res. of Japan Soc. Appl. Phys., 30a-ZS-4, Tokyo, Mar. 2001.

7.         K. Matsui, T. Okamoto, N. Nunoya and S. Arai, “Analysis of Threshold Current of Membrane DFB Lasers with Wirelike Active Regions,” ｢半導体薄膜活性層分離型DFBレーザの閾値電流解析｣ Nat. Conv. Res. of Japan Soc. Appl. Phys., 30a-ZS-7, Tokyo, Mar. 2001.

 

Quantum Coherent Electron Devices

 

Journal Papers

 

1.         M. Nagase, M. Suhara, Y. Miyamoto and K. Furuya, “Peak Width Analysis of Current-Voltage Characteristics of Triple-Barrier Resonant Tunneling Diodes”, Jpn. J. Appl. Phys., Vol. 39, Part 1, No. 6A, pp. 3314-3318, June 2000.

2.         N. Machida and K. Furuya, "Numerical Simulation of Hot Electron Interference in a Solid State Biprism: Conditions for Interference Observation", J. Appl. Phys., Vol. 88, No. 5, pp. 2885-2891, Sept. 2000.

3.         N. Sakai, K. Furuya, B. Y. Zhang and S. Karasawa, “Theoretical Relation between Spatial Resolution and Efficiency of Detection in Scanning Hot Electron Microscope”, Jpn. J. Appl. Phys., Vol. 39, Part 1, No. 9A, pp. 5256-5260, Sept. 2000.

4.         B. Y. Zhang, Y. Ikeda, Y. Miyamoto, K. Furuya and N. Kikegawa, “A Versatile Hot Electron Emitter of InGaAs/AlAs Heterostructure with Wide Energy Range at High Current Density”, Physica E, Vol. 7, No. 3-4, pp. 851-854, 2000.

5.         B. Gustafson, M. Suhara, K. Furuya, L. Samuelson and W. Seifert, “Lateral Current Confinement in Selectively Grown Resonant Tunneling Transistor with an Embedded Gate”, Physica E, Vol. 7, No. 3-4, pp. 819-822, 2000.

6.         B. Hansson, N. Machida, K. Furuya, L. –E. Wernersson and L. Samuelson, “Simulation of Interference Patterns in Solid-State Biprism Devices”, Solid-State Electron., Vol. 44, No. 9A, pp. 1275-1280, 2000.

 

International Conferences

 

1.         Y. Miyamoto, M. Kurita and K. Furuya, “Vacuum Microelectronic Electron Emitter by InP Double Barrier Diode toward RF Application”, 58th Annual Device Research Conference (58th DRC), III-5, p 55-56, Denver, USA, June 19-21, 2000.

2.         B. Y. Zhang, S. Karasawa, N. Sakai, Y. Miyamoto and K. Furuya, “Characterization of Hot Electron Transmission Tunneling through the Gap Potential in Scanning Hot Electron Microscopy (SHEM)”, 10th International Conference on Solid Films and Surfaces (ICSFS-10), Mo-P-167, Princeton, USA, July 9-13, 2000.

3.         M. Nagase, K. Furuya and N. Machida, “Phase Breaking Effect Appearing in I-V Characteristics of Double-Barrier Resonant-Tunneling Diodes – Theoretical Fitting Over Four Orders of Magnitude –”, The 2000 International Conference on Solid State Devices and Materials (SSDM2000), D-6-5, p 346-347, Sendai, Japan, August 29-31, 2000.

4.         N. Machida, H. Tamura and K. Furuya, “Numerical Simulation of Hot Electron Interference in Solid-State Biprism”, 25th International Conference on the Physics of Semiconductors (ICPS25), M261, p 964, Osaka, Japan, September 17-22, 2000.

 

Meeting Report

 

1.         N. Machida and K. Furuya, “Device Design of Solid-State Biprism for Observation of Electron Interference”, 「電子波干渉観測のための固体バイプリズム設計」, Technical Report of IEICE, ED99-301, SDM99-194, pp. 79-86, Feb. 2000.

2.         M. Nagase, K. Furuya and N. Machida, “Evaluation of Phase Coherent Length Using Double-Barrier Resonant Tunneling Diodes”, 「二重障壁共鳴トンネルダイオードを用いた位相コヒーレンス長の評価」, Technical Report of IEICE, ED2000-108, pp. 55-59, July 2000.

 

Domestic Conferences

 

1.         B. Y. Zhang, N. Sakai, S. Karasawa and K. Furuya, “Estimation of Potential Profile and Hot Electron Transmission Through the Air Gap from I-S Characteristics of STM”, Nat. Conv. Res. of Japan Soc. Appl. Phys., 29p-A-8, Digest II -p.662, Tokyo, Mar. 2000.

2.         N. Sakai, B. Y. Zhang, S. Karasawa and K. Furuya, “Relation between Resolution and Efficiency of Detection for Scanning Hot Electron Microscope", 「走査型ホットエレクトロン顕微鏡における分解能と検出効率の関係」, Nat. Conv. Res. of Japan Soc. Appl. Phys., 29p-A-9, Digest II -p.662, Tokyo, Mar. 2000.

3.         S. Karasawa, B. Y. Zhang, N. Sakai, Y. Miyamoto and K. Furuya, "Hot Electron Emitter for Measurement of Scanning Hot Electron Microscope", 「走査型ホットエレクトロン顕微鏡のためのホットエレクトロンエミッタ」, Nat. Conv. Res. of Japan Soc. Appl. Phys., 29p-A-10, Digest II -p.663, Tokyo, Mar. 2000.

4.         N. Machida and K. Furuya, “Proposal of a Possible Electron Interference Experiment in Semiconductor/Metal Structure”, 「半導体/金属構造を用いた電子波干渉実験の提案」, Nat. Conv. Res. of Japan Soc. Appl. Phys., 30p-YD-2, Digest III -p.1341, Tokyo, Mar. 2000.

5.         N. Machida and K. Furuya, "Numerical Simulation of Hot Electron Interference in Solid State Biprism: Conditions for Interference Observation", 「固体バイプリズム中ホットエレクトロン波干渉の数値シミュレーション：干渉観測条件」, Nat. Conv. Res. of Japan Soc. Appl. Phys., 30p-YD-3, Digest III -p.1342, Tokyo, Mar. 2000.

6.         M. Nagase, K. Furuya and N. Machida, "Analysis of Electron Wave Resonant Property Taking Phase Breaking into Account", 「位相破壊を取り入れた電子波共鳴特性の解析について」, Nat. Conv. Res. of Japan Soc. Appl. Phys., 30p-YD-4, Digest III -p.1342, Tokyo, Mar. 2000.

7.         B. Y. Zhang, K. Furuya, S. Karasawa and T. Hirata, "Hot Electron Current to Thermal Electron Current Ratio in Scanning Hot Electron Microscopy (SHEM)", Nat. Conv. Res. of Japan Soc. Appl. Phys., 5a-H-2, Digest II -p.561, Sapporo, Sep.2000.

8.         S. Karasawa, B. Y. Zhang, T. Hirata and K. Furuya, “Experimental Estimation of Detectable Current in Scanning Hot Electron Microscope”, 「走査型ホットエレクトロン顕微鏡における検出可能な電流値の実験的評価」, Nat. Conv. Res. of Japan Soc. Appl. Phys., 5a-H-3, Digest II -p.561, Sapporo, Sep. 2000.

9.         M. Nagase, M. Kurahashi and K. Furuya, “Analysis of Triple-Barrier Resonant Tunneling Diodes Taking into Account Phase Breaking Effect”, 「位相破壊を考慮した三重障壁共鳴トンネルダイオードの共鳴特性解析」, Nat. Conv. Res. of Japan Soc. Appl. Phys., 6a-ZR-6, Digest III -p.1165, Sapporo, Sep. 2000.

10.     N. Machida, K. Furuya and T. Okada, "Coherent Hot Electron Emitter", 「コヒーレントホットエレクトロンエミッタ」, Nat. Conv. Res. of Japan Soc. Appl. Phys., 6a-ZR-10, Digest III -p.1166, Sapporo, Sep. 2000.

11.     M. Kurita, Y. Miyamoto and K. Furuya, “Electron Emission from GaInAs/AlAs/InP Vacuum Emitter”, 「GaInAs/AlAs/InP構造真空エミッタからの電子放出」, Nat. Conv. Res. of Japan Soc. Appl. Phys., 6p-ZB-12, Digest II -p.661, Sapporo, Sep. 2000.

 

 

High-Speed Electron Devices Using Advanced Structures and Materials

 

Journal Papers

 

1.         T. Arai, Y. Harada, S. Yamagami, Y. Miyamoto and K. Furuya, "First Fabrication of GaInAs/InP Buried Metal Heterojunction Bipolar Transistor and Reduction of Base-Collector Capacitance", Jpn. J. Appl. Phys., Vol.39, Part 2, No. 6A, pp.L503-L505, June 2000.

2.         M.Asada, Y.Oguma, and N.Sashinaka, "Estimation of Interwell Terahertz Gain by Photon-Assisted Tunneling Measurement in Triple-Barrier Resonant Tunneling Diodes", Appl. Phys. Lett., Vol.77, No. 5, pp.618-620, July 2000.

3.         A. Itoh, M. Saitoh and M. Asada, “A 25-nm-long Channel Metal-Gate p-Type Schottky Source/Drain Metal-Oxide-Semiconductor Field Effect Transistor on Separation-by-Implanted-Oxygen Substrate”, Jpn. J. Appl. Phys., Vol.39, Part 1, No. 8, pp.4757-4758, August 2000.

4.         N.Sashinaka, Y.Oguma and M.Asada, “Observation of Terahertz Photon-Assisted Tunneling in Triple-Barrier Resonant Tunneling Diodes Integrated with Patch Antenna”, Jpn. J. Appl. Phys., Vol.39, Part 1, No. 8, pp.4899-4903, August 2000.

 

International Conference

 

1.         T. Arai, Y. Harada, S. Yamagami, Y. Miyamoto and K. Furuya, "CBC Reduction in GaInAs/InP Buried Metal Heterojunction Bipolar Transistor" 12th International Conference on Indium Phosphide and Related Materials (IPRM'00), TUB1.6, pp. 254-257, May 14-18, 2000, Williamsburg, VA USA.

2.         A.Itoh, M.Saitoh and M.Asada, “Very Short Channel Metal-Gate Schottky Source/Drain SOI-PMOSFETs and Their Short Channel Effect”, IEEE Device Research Conference (DRC’00), III-16, June 19-21, 2000, Denver, CO USA.

3.         T. Arai, S. Yamagami, Y. Okuda, Y. Harada, Y. Miyamoto and K. Furuya, "InP DHBT with 0.5µm Wide Emitter along <010> Direction toward BM-HBT with Narrow Emitter" Topical Workshop on Heterostructure Microelectronics (TWHM'00), Tue-3, pp. 66-67, August 20-23, 2000, Kyoto, Japan.

4.         N. Sashinaka, Y. Oguma, and M. Asada, "Terahertz Photon-Assisted Tunneling in Resonant Tunneling Diode Integrated with Patch Antenna", Topical Workshop on Heterostructure Microelectronics (TWHM'00), Mon-28, August 20-23, 2000, Kyoto, Japan.

5.         Y. Miyamoto,  "HBT with Buried Metal in InP as Collector Electrode" Advanced Heterostructure Workshop 2000, L-4, December 3-8, 2000, Kona, HI, USA.

 

Domestic Conferences

 

1.         T. Arai, Y. Harada, S. Yamagami, Y. Miyamoto and K. Furuya, "Reduction of Base-Collector Capacitance in Buried Metal Heterojunction Bipolar Transistor", 「Buried Metal Heterojunction Bipolar Transistorにおけるベース･コレクタ間容量の低減」, Nat. Conv. Rec. of The 47th Spring Meeting, Japan Soc. Appl. Phys., 28a-ZA-3, Digest III–p.1358, Tokyo, Mar., 2000.

2.         A.Itoh, M. Saitoh and M. Asada, “25 nm-Long Channel Metal Gate p-Type Schottky Source/Drain MOSFET on SIMOX Substrate”, 「SIMOX基板上チャンネル長25nm金属ゲートp型Shottky Sourrce/Drain」, Nat. Conv. Rec. of The 47th Spring Meeting, Japan Soc. Appl. Phys., 29a-ZK-2, Digest II -p.891, Tokyo, Mar., 2000.

3.         Y.Oguma, N.Sashinaka and M.Asada, “Incident Power Dependence of THz Photon-Assisted Tunneling in Triple-Barrier Resonant Tunneling Diodes”, 「三重障壁共鳴トンネルダイオードにおけるTHzフォトンアシストトンネル特性の入射電力依存性」, Nat. Conv. Rec. of The 47th Spring Meeting,Japan Soc. Appl. Phys., 30a-YD-3, Digest III -p.1340, Tokyo, Mar., 2000.

4.         S. Yamagami, T. Arai, Y. Okuda, Y. Miyamoto and K. Furuya, "InP DHBT with 0.5µm Wide Emitter toward BM-HBT with Narrow Emitter", 「BM-HBT微細化に向けた0.5µm幅エミッタInP系DHBTの作製と測定」, Nat. Conv. Rec. of The 61st Autumn Meeting, Japan Soc. Appl. Phys., 3p-ZQ-3, Digest III–p.92, Sapporo, Sept., 2000.

 

Light Emitting Devices Using Advanced Structures and Materials

 

Journal of Papers

 

1.       T. Maruyama, N. Nakamura, and M. Watanabe, "Improvement of the Visible Electroluminescence from Nanocrystalline Silicon Embedded in CaF2 on Si(111) Substrate Prepared by Rapid Thermal Annealling", Jpn. J. Appl. Phys., vol. 39, no. 4B, pp.1996-2000, Jan. 2000.

2.       M. Watanabe, Y. Maeda, and S. Okano, "Epitaxial Growth and Ultraviolet Photoluminescence  of CaF2/ZnO/CaF2 Heterostructures on Si(111)", Jpn. J. Appl. Phys., vol. 39, no. 6A, pp. L500-L502, Jun. 2000.

3.       M. Watanabe, T. Funayama, T. Teraji, N. Sakamaki, "CaF2/CdF2 Double-Barrier Resonant Tunneling Diode with High Room-Temperature Peak-to-Valley Ratio", Jpn. J. Appl. Phys., vol. 39, no. 7B, pp. L716-L719, July 2000.

4.       M. Watanabe, Y. Iketani, M. Asada, "Epitaxial Growth and Electrical Characteristics of CaF2/Si/CaF2 Resonant Tunneling Diode Structures Grown on Si(111) 1 -off Substrate", Jpn. J. Appl. Phys., vol. 39, no. 10A, pp. L964-L967, July 2000.

 

International Conferences

 

1.           M. Watanabe, T. Funayama, T. Teraji, N. Sakamaki, “Resonant Tunneling Characteristics of CdF2/CaF2 Heterostructures Grown on Silicon,” 2000 IEEE Silicon Nanoelectronics Workshop, 5-4, pp.57-58, Honolulu, Hawaii, June 11-12, 2000.

2.           M. Watanabe, Y. Iketani, M. Asada, “Characteristics of Epitaxial Si/CaF2 Resonant Tunneling Diodes Grown on Si(111) 1  off Substrate,” 2000 IEEE Silicon Nanoelectronics Workshop, 5-6, pp.63-64, Honolulu, Hawaii, June 11-12, 2000.

3.           M. Watanabe, T. Funayama, T. Teraji, N. Sakamaki, “Negative Differential Resistance with Peak to Valley Ratio Greater Than 100,000 of Double Barrier CdF2/CaF2 Resonant Tunneling Diode on Si(111)”, 42nd Electronic Materials Conference, K7, pp.23-23, Denver, U.S.A., June 21-23, 2000.

4.           M. Watanabe, T. Funayama, T. Teraji, N. Sakamaki, “Room Temperature Negative Differential Resistance of CdF2-CaF2 Resonant Tunneling Diode on Si(111),” 2000 Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices, 4.2, pp.73-77, Okinawa, Japan, June 28-30, 2000.

 

Meeting Report

 

1.         M. Watanabe, M. Tsutsui, and M. Asada, “Resonant Tunneling Diode Silicon Substrate Using Si-CaF2 and CdF2-CaF2 Heterostructures,” 「Si-CaF2及びCdF2-CaF2ヘテロ接合を用いたシリコン基板上共鳴トンネルダイオード」, Technical report of IEICE, ED99-316, Sapporo, Feb. 2000.

 

Domestic Conferences

 

1.                  T. Funayama, T. Teraji and M. Watanabe, "Room Temperature Negative Differential Resistance of CdF2/CaF2 Resonant Tunneling Diode", 「CdF2/CaF2共鳴トンネルダイオードの室温微分負性抵抗特性」, The 47th Spring Meeting of The Jpn. Soc. Of Appl. Phys. And Related Societies, Digest III -p.1340, 30a-YD-7, Tokyo, March, 2000.

2.                  Y. Iketani, M. Watanabe and M. Asada, "Fabrication and Characterization of Si/CaF2 Double Barrier Resonant Tunneling Diode on Si(111) 1 off Substrate", 「Si(111)1 off 基板上Si/CaF2 二重障壁共鳴トンネルダイオードの作製と評価」, The 47th Spring Meeting of The Jpn. Soc. Of Appl. Phys, Digest III -p.1340, 30a-YD-8, Tokyo, March, 2000.

3.                  T. Maruyama, N. Nakamura and M. Watanabe, "Crystal Growth of BeSe on CaF2/Si(111) Substrate", 「CaF2/Si(111)基板上へのBeSe成長」, The 61th Autumn Meeting of The Jpn. Soc. Of Appl. Phys, Digest I -p.236, 4p-Z-8, Sapporo, Sept., 2000.

4.                  M. Suzuki, S. Okano, M. Watanabe, "UV Photoluminescence from ZnO/CaF2 Heteroepitaxial Structure on Si(111) Substrate", 「Si(111)上ZnO/CaF2ヘテロエピタキシャル構造からのPL紫外線発光」, The 61th Autumn Meeting of The Jpn. Soc. Of Appl. Phys, Digest III -p.1195, 3p-ZK-1, Sapporo, Sept., 2000.

5.                  N. Sakamaki and M. Watanabe, "Room Temperature Negative Differential Resistance of CdF2/CaF2 Resonant Tunneling Diode", 「CdF2/CaF2共鳴トンネルダイオードの室温微分負性抵抗特性」, The 61st Autumn Meeting of The Jpn. Soc. Of Appl. Phys., Digest III -p.1166, 6a-ZR-9, Sapporo, Sept., 2000.

6.                  T. Maruyama, N. Nakamura and M. Watanabe, "Epitaxial Growth of BeZnSe on CaF2/Si(111) Substrate", 「CaF2/Si(111)基板上へのBeZnSeエピタキシャル成長」, The 48th Spring Meeting of The Jpn. Soc. Of Appl. Phys. And Related Societies, Digest I -p.319, 28p-K-13, Tokyo, March, 2001.

7.                  M. Suzuki, S. Okano and M. Watanabe, " Oxygen Ambient Annealing of ZnO Thin Films on CaF2/Si Substrate ", 「CaF2/Si基板上へZnO薄膜の酸素雰囲気中アニール」, The 48th Spring Meeting of The Jpn. Soc. Of Appl. Phys. And Related Societies, Digest III -p.1438, 31a-YL-2, Tokyo, March, 2001.

8.                  S. Okano, M. Suzuki and M. Watanabe, "Impurity Control of Eptaxial ZnO Thin Films Grown on CaF2/Si(111) by N, Ga Codoping ", 「CaF2/Si(111)基板上ZnO薄膜のN, Gaコドーピング法による不純物制御」, The 48th Spring Meeting of The Jpn. Soc. Of Appl. Phys. And Related Societies, Digest III -p.1438, 31a-YL-3, Tokyo, March, 2001.

9.                  T. Ishikawa, N. Sakamaki, D. Okamoto and M. Watanabe, "Fabrication and Characterization of CdF2/CaF2 Resonant Tunneling Diode by Selective Area Growth ", 「ナノ領域選択成長によるCdF2/CaF2共鳴トンネルダイオードの作製と評価」, The 48th Spring Meeting of The Jpn. Soc. Of Appl. Phys. And Related Societies, Digest III -p.1338, 29a-YD-2, Tokyo, March, 2001.

 

Processing for Nanometer Structures

 

Journal Papers

 

1.         Y. Miyamoto, A. Kokubo, H. Oguchi, M. Kurahashi and K. Furuya, "Fabrication and Transport Properties of 50-nm-Wide Au/Cr/GaInAs Electrode for Electron Wave Interference Device", Applied Surface Science, Vol. 159-160, pp. 179-185, 2000.

2.         T. Arai, H. Tobita, Y. Harada, M. Suhara, Y. Miyamoto and K. Furuya, "Toward Nano-Metal Buried Structure in InP - 20 nm Wire and InP Buried Growth of Tungsten", Physica E, Vol. 7, Vol. 3-4, pp. 896-901, 2000.

3.         T. Arai, H. Tobita, Y. Miyamoto and K. Furuya, "GaAs Buried Growth over Tungsten Stripes Using TEG and TMG", Journal of Crystal Growth, Vol. 221, Vol. 1-4, pp.212-219, 2000.

 

International Conferences

 

1.              T. Arai, H. Tobita, Y. Miyamoto and K. Furuya, "GaAs Buried Growth over Tungsten Stripes Using TEG and TMG", 10th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-X), Tu-A3, pp. 40-41, June 5-9 2000, Sapporo, Japan.

 

Domestic Conferences

 

1.       T. Arai, H. Tobita, Y. Miyamoto and K. Furuya, "Buried Growth of GaAs over Tungsten Stripes Using TMG and TEG", 「TMGとTEGを材料としたタングステン細線のGaAs OMVPE埋め込み成長」, Nat. Conv. Rec. of The 47th Spring Meeting, Japan Soc. Appl. Phys., 31a-P20-10, Digest I–p.338, Tokyo, Mar., 2000.

2.       H. Oguchi, K. Sato, Y. Miyamoto and K. Furuya, “Contact Characteristics in 80nm Period Electrode on GaInAs for Electron Wave Interference Device”, ｢電子波干渉素子用 GaInAs上80nm周期電極の特性｣, Nat. Conv. Rec. of The 47th Spring Meeting, Japan Soc. Appl. Phys., 30p-YD-1, Digest III–p.1341, Tokyo, Mar., 2000.

3.       Y. Miyamoto, R. Yamamoto, H. Tobita, T. Arai, and K. Furuya, "Very Shallow n-GaAs Ohmic Contact with 10 nm Thick GaInAs Layer", 19th Electronic Materials Symposium (EMS19), B2, pp. 7-8, June 28-30, 2000, Izu-Nagaoka, Japan.