LIST OF REPORTS

 

Low Dimensional Quantum Structure Lasers

 

Journal Papers

 

1.        N. Nunoya, M. Nakamura, M. Morshed, S. Tamura and S. Arai, “High-Performance 1.55 mm Wavelength GaInAsP-InP Distributed-Feedback Lasers with Wirelike Active Regions,” IEEE J. Select. Topics in Quantum Electron., vol. 7, no. 2, pp.249-258, March/April 2001.

2.        H. Yagi, K. Muranushi, N. Nunoya, T. Sano, S. Tamura and S. Arai, “GaInAsP/InP Strain-Compensated Quantum-Wire Lasers Fabricated by CH4/H2 Dry Etching and Organometallic Vapor-Phase-Epitaxial Regrowth,” Jpn. J. Appl. Phys., vol. 41, part 2, no.2B, pp. L186-L189, Feb. 2002.

3.        K. Ohira, N. Nunoya, S. Tamura and S. Arai “Distributed reflector laser with wirelike active regions for asymmetric output property,” Jpn. J. Appl. Phys., vol. 41, part 1, no.3A, pp. 1417-1418, Mar. 2002.

 

International Conferences

 

1.        H. Midorikawa, N. Nunoya, K. Muranushi, S. Tamura and S. Arai, “Low-Damage Etched/Regrown Interfaces of GaInAsP/InP Wirelike Laser with Strain-Compensated MQW Structure,” The 13th Int’l Conf. on Indium Phosphide and Related Materials (IPRM’01), TuB2-2, pp.67-70, Nara (Japan), May 2001.

2.        N. Nunoya, M. Morshed, K. Ohira, S. Tamura and S. Arai, “Distributed Reflector Lasers with Wirelike Active Regions Having Asymmetric Output Property,” The 4th Pacific Rim Conf. on Lasers and Electro-Optics (CLEO/PR2001), WC2-2, pp.II-44-45, Makuhari (Chiba, Japan), July 2001.

3.        H. Midorikawa, K. Muranushi, N. Nunoya, T. Sano, S. Tamura and S. Arai, “1.5 mm Wavelength GaInAsP/InP 5-Layered Quantum-Wire Lasers Fabricated by CH4/H2 Dry Etching and Regrowth,” The 14th Annual Meeting of The IEEE Lasers & Electro-Optics Society (LEOS2001), WA-5, pp.407-408, San Diego (USA), Nov. 2001.

4.        N. Nunoya, K. Ohira, H. Midorikawa, K. Muranushi and S. Arai, “CW Life Test of Gain-Matched DFB Laser with Wire-Like Active Regions,” Fifth International Symposium on Contemporary Photonics Technology (CPT 2002), E-12, pp.83-84, Tokyo (Japan), Jan. 2002.

Meeting Reports

 

1.        N. Nunoya, K. Ohira, H. Midorikawa, K. Muranushi, S. Tamura and S. Arai, “Design and Fabrication of Distributed Reflector Lasers for Low Threshold Current and High Efficiency Operation,” ｢低しきい値・高効率動作のための活性層分離型分布反射型レーザの設計と試作｣ Technical Report of IEICE, OPE2001-2, pp.7-12, Tokyo (Japan), May 2001.

2.        H. Midorikawa, N. Nunoya, K. Muranushi, S. Tamura and S. Arai, “Low Threshold Operation of 1.5 mm Wavelength Strain-Compensated GaInAsP/InP Multiple Wirelike Laser Fabricated by Low Damage CH4/H2 Dry Etching and Regrowth,” ｢低損傷CH4/H2ドライエッチングと埋め込み再成長による1.5mm波長帯GaInAsP/InP歪補償多層細線レーザの低しきい値動作｣ Technical Report of IEICE, OPE2001-33/LQE2001-32 (2001-07), p.7-12, Tokyo (Japan), July 2001.

3.        H. Midorikawa, K. Muranushi, N. Nunoya, T. Sano, S. Tamura and S. Arai, “1.5 mm Wavelength Strain-Compensated GaInAsP/InP 5-Layered Quantum-Wire Lasers by Low-Damage CH4/H2 Reactive Ion Etching Process,” The 8th Int. Symposium on Quantum Effect Electronics, pp.50-53, Meguro, Oct. 2001.

 

Domestic Conferences

 

1.        K. Muranushi, H. Midorikawa, N. Nunoya, S. Tamura, B. Chen and S. Arai, “Temperature dependence of threshold current in strain-compensated GaInAsP/InP wirelike laser,” ｢GaInAsP/InP歪補償細線レーザにおけるしきい値電流の温度特性｣ Nat. Conv. Res. of Japan Soc. Appl. Phys., 30a-ZS-1, Digest III -p.1150, Tokyo, Mar. 2001.

2.        H. Midorikawa, N. Nunoya, K. Muranushi, B. Chen and S. Arai, “Threshold reduction by thin InP barrier in regrowth process of GaInAsP/InP MQW laser,” ｢再成長プロセスにおけるInP障壁薄層化によるGaInAsP/InP MQWレーザの低閾値動作｣ Nat. Conv. Res. of Japan Soc. Appl. Phys., 30a-ZS-2, Digest III -p.1150, Tokyo, Mar. 2001.

3.        M. Morshed, N. Nunoya, K. Ohira, J. Wiedmann and S. Arai, “Improvement of single-mode characteristics of DFB lasers with gain-matching effect,” ｢活性層分離型DFBレーザの利得整合効果による単一モード性向上｣ Nat. Conv. Res. of Japan Soc. Appl. Phys., 30a-ZS-5, Digest III -p.1151, Tokyo, Mar. 2001.

4.        N. Nunoya, M. Morshed, K. Ohira, S. Tamura, B. Chen and S. Arai, “Fabrication of GaInAsP/InP phase shift DFB laser with wirelike active regions,” ｢GaInAsP/InP位相シフト活性層分離型DFBレーザの試作｣ Nat. Conv. Res. of Japan Soc. Appl. Phys., 30a-ZS-6, Digest III -p.1152 Tokyo, Mar. 2001.

5.        K. Muranushi, H. Midorikawa, N. Nunoya, K. Ohira, S. Tamura and S. Arai, “Room Temperature Operation of Strain-Compensated GaInAsP/InP 5-Layered Quantum-Wire Laser,” 「GaInAsP/InP5層歪補償量子細線レーザの室温発振」Nat. Conv. Res. of Japan Soc. Appl. Phys., 13p-B-7 Digest III -p.866, Aichi, Sep. 2001.

6.        H. Midorikawa, K. Muranushi, N. Nunoya and S. Arai, “Low-damage etched/regrown interface of strain-compensated GaInAsP/InP quantum-wire laser,” 「GaInAsP/InP歪補償量子細線レーザの低損傷再成長界面」Nat. Conv. Res. of Japan Soc. Appl. Phys., 13p-B-8 Digest III -p.867, Aichi, Sep. 2001.

7.        N. Nunoya, K. Ohira, H. Midorikawa, K. Muranushi and S. Arai, “Reliability Test of DFB Laser with Wirelike Active Regions Fabricated by CH4/H2-RIE,” 「CH4/H2-RIEによる活性層分離型DFBレーザの初期信頼性」Nat. Conv. Res. of Japan Soc. Appl. Phys., 13p-B-13 Digest III -p.868, Aichi, Sep. 2001.

8.        K. Ohira, N. Nunoya, A. Onomura and S. Arai, “Influence of a Phase Shift on DFB Laser with Wirelike Active Regions,” 「活性層分離型DFBレーザにおける位相シフトの効果」Nat. Conv. Res. of Japan Soc. Appl. Phys., 29a-YS-7 Digest III-p.1143, Kanagawa, Mar. 2002.

9.        N. Nunoya, K. Ohira, A. Onomura and S. Arai, “Sub-mode suppression ratio(SMSR) of DFB lasers with wirelike active regions,”「活性層分離型DFBレーザの副モード抑圧比(SMSR)」Nat. Conv. Res. of Japan Soc. Appl. Phys., 29a-YS-8 Digest III-p.1144,  Kanagawa, Mar. 2002.

10.    K. Muranushi, H. Yagi, T. Sano, N. Nunoya, S. Tamura and S. Arai, “Realization of Narrow Wire Width Multiple-Layered Quantum-Wire Laser,” 「狭細線幅多層量子細線レーザの実現」Nat. Conv. Res. of Japan Soc. Appl. Phys., 29a-YS-13 Digest III-p.1145, Kanagawa, Mar. 2002.

11.    H. Yagi, K. Muranushi, N. Nunoya, T. Sano, S. Tamura and S. Arai, “Wire width dependence of blue shift in strain-compensated GaInAsP/InP quantum-wire lasers,” 「GaInAsP/InP歪補償量子細線レーザのブルーシフト量の細線幅依存性」Nat. Conv. Res. of Japan Soc. Appl. Phys., 29p-YH-8 Digest III-p.1394, Kanagawa, Mar. 2002.

 

New Types of Semiconductor Lasers for Photonic Integration

 

Journal Papers

 

1.        M. M. Raj, J. Wiedmann, S. Toyoshima, Y. Saka, K. Ebihara and S. Arai, “High-reflectivity semiconductor/benzocyclobutene Bragg reflector mirrors for GaInAsP/InP lasers,” Jpn. J. Appl. Phys., vol. 40, part 1, no. 4A, pp. 2269-2277, Apr. 2001.

2.        J. Wiedmann, M. M. Raj, K. Ebihara, K. Matsui, S. Tamura and S. Arai, “Deeply etched semiconductor/benzocyclobutene distributed Bragg reflector laser combined with multiple cavities for 1.5-mm-wavelength single-mode operation,” Jpn. J. Appl. Phys., vol. 40, part 1, no. 6A, pp. 4031-4037, June 2001.

3.        J. Wiedmann, K. Ebihara, H.-C. Kim, B. Chen, M. Ohta, K. Matsui, S. Tamura and S. Arai, “1.5 mm wavelength distributed reflector lasers with vertical grating,” Electron. Lett., vol. 37, no. 13, pp. 831-832, June 2001.

4.        H.-C. Kim, J. Wiedmann, K. Matsui, S. Tamura and S. Arai, “1.5-mm-wavelength distributed feedback lasers with deeply etched first-order vertical grating,” Jpn. J. Appl. Phys., vol. 40, part 2, no.10B, pp. L1107-L1109, Oct. 2001.

5.        T. Okamoto, N. Nunoya, Y. Onodera, S. Tamura and S. Arai, “Continuous wave operation of optically pumped membrane DFB laser,” Electron. Lett., vol. 37, no. 24, pp. 1455-1457, Nov. 2001.

6.        S.-H. Jeong, H.-C. Kim, T. Mizumoto, J. Wiedmann, S. Arai, M. Takenaka, and Y. Nakano, “Polarisation insensitive deep-ridge vertical-groove DFB waveguide for all-optical switching,” Electron. Lett., vol. 37, no. 23, pp 1387-1389, Nov. 2001

7.        J. Wiedmann, H.-C. Kim, K. Ebihara, B. Chen, M. Ohta, S. Tamura, J.-I. Shim and S. Arai, “GaInAsP/InP distributed reflector lasers consisting of deeply etched vertical gratings,” Jpn. J. Appl. Phys., vol. 40, part 1, no.12, pp. 6845-6851, Dec. 2001.

8.        T. Okamoto, N. Nunoya, Y. Onodera, S. Tamura and S. Arai, “Single-Mode Operation of Optically Pumped Membrane Buried Heterostructure Distributed-Feedback Lasers,” Jpn. J. Appl. Phys., vol. 41, part 2, no.3A, pp. L249-L251, Mar. 2002.

 

International Conferences

 

1.      J. Wiedmann, K. Ebihara, H. -C. Kim, K. Matsui, S. Tamura, B. Chen and S. Arai, “Deeply etched 1.55 mm wavelength distributed-reflector lasers with vertical grating,” The 13th Int’l Conf. on Indium Phosphide and Related Materials (IPRM’01), TuA1-3, pp.19-22, Nara (Japan), May 2001.

2.      T. Okamoto, N. Nunoya, Y. Onodera, S. Tamura and S. Arai, “CW Operation of Optically Pumped Membrane DFB Laser,” The 4th Pacific Rim Conf. on Lasers and Electro-Optics (CLEO/PR2001), WJPD1-10, pp.44-45 (PD), Makuhari (Chiba, Japan), July 2001.

3.      H.-C. Kim, J. Wiedmann, K. Matsui, S. Tamura and S. Arai, “1.55 mm wavelength GaInAsP/InP distributed feedback lasers with deeply etched first order vertical grating,” The 4th Pacific Rim Conf. on Lasers and Electro-Optics (CLEO/PR2001), WJPD1-11, pp.46-47 (PD), Makuhari (Chiba, Japan), July 2001.

4.      T. Okamoto, N. Nunoya, Y. Onodera, S. Tamura and S. Arai, “Single Mode Operation of Optically Pumped Membrane BH-DFB Lasers,” The 14th Annual Meeting of The IEEE Lasers & Electro-Optics Society (LEOS2001), PD1-1, San Diego (USA), Nov. 2001.

5.      S.-H. Jeong, H.-C. Kim, T. Mizumoto, J. Wiedmann, S. Arai, M. Takenaka, and Y. Nakano, “Demonstration of Polarization Insensitive All-Optical Switching in a Highmesa Distributed Feedback Waveguide,” Fifth International Symposium on Contemporary Photonics Technology (CPT 2002), B-5, pp. 31-32, Tokyo (Japan), Jan. 2002.

6.      T. Okamoto, N. Nunoya, Y. Onodera, S. Tamura and S. Arai, “1550 nm Wavelength Membrane DFB Laser Cladded by BCB Polymer,” Fifth International Symposium on Contemporary Photonics Technology (CPT 2002), E-21, pp.101-102, Tokyo (Japan), Jan. 2002.

7.      S.-H. Jeong, T. Mizumoto, H.-C. Kim, J. Wiedmann, S. Arai, M. Takenaka and Y. Nakano, “Polarization independent all-optical switching employing nonlinear vertical-groove DFB waveguide,” Conference on Optical Fiber Communications (OFC2002), Anaheim (USA), Mar. 2002.

 

Meeting Reports

 

1.      S. Arai, H.-C. Kim, J. Wiedmann and S. Tamura, “1.5 mm Wavelength Distributed Feedback Lasers with Deeply Etched Vertical Grating,” 「垂直回折格子を用いた1.5mm波長分布帰還形レーザ」第82回微小光学研究会, pp.1-6, 東京, Nov. 2001.

2.      S.-H. Jeong, H.-C. Kim, T. Mizumoto, J. Wiedmann, S. Arai, M. Takenaka and Y. Nakano, “Polarization insensitive all-optical switch with DFB waveguide,” 「DFB導波路を用いた全光スイッチの偏光無依存化」Technical Report of IEICE, NS2001-197, PS2001-63(2001-12), pp.163-168, Dec. 2001.

3.      S.-H. Jeong, H.-C. Kim, T. Mizumoto, J. Wiedmann, S. Arai, M. Takenaka and Y. Nakano, “All-optical polarization independent operation in a nonlinear DFB waveguide switch,” 「DFB導波路全光スイッチの偏光無依存動作特性」Technical Report of IEICE, PS2001-87, OFT2001-84, OPE2001-128, LQE2001-114(2002-01), pp.55-60, Dec. 2001.

 

Domestic Conferences

 

1.        J. Wiedmann, K. Ebihara, M. Ohta, H.-C. Kim, B. Chen, K. Matsui, S. Tamura and S. Arai, “Low threshold current operation of distributed reflector (DR) lasers with vertical grating,” ｢垂直回折格子を用いた分布反射形（DR）レーザの低電流動作｣ Nat. Conv. Res. of Japan Soc. Appl. Phys., 30a-ZS-4, Digest III -p.1151, Tokyo, Mar. 2001.

2.        K. Matsui, T. Okamoto, N. Nunoya, S. Arai, “Analysis of threshold current of membrane DFB lasers with wirelike active regions,” ｢半導体薄膜活性分離型DFBレーザの閾値電流解析｣ Nat. Conv. Res. of Japan Soc. Appl. Phys., 30a-ZS-7, Digest III -p.1152, Tokyo, Mar. 2001.

3.        H.-C. Kim, J. Wiedmann, K. Matsui, S. Tamura and S. Arai, “Distributed Feedback (DFB) laser with first order vertical grating,” 「深い垂直エッチング技術を用いた一次回折格子DFBレーザ」Nat. Conv. Res. of Japan Soc. Appl. Phys., 13p-B-12, Digest III -p.868, Aichi, Sep. 2001.

4.        T. Okamoto, N. Nunoya, Y. Onodera, S. Tamura and S. Arai, “Room Temperature CW Operation of Optically-Pumped Membrane DFB Lasers,” 「半導体薄膜構造DFBレーザの光励起室温連続動作」Nat. Conv. Res. of Japan Soc. Appl. Phys., 13p-B-14 Digest III -p.869, Aichi, Sep. 2001.

5.        T. Okamoto, N. Nunoya, Y. Onodera, S. Tamura and S. Arai, “Single-mode Operation of Optically Pumped Membrane BH-DFB Lasers,” 「BH構造を導入した光励起半導体薄膜DFBレーザの単一モード動作」 Nat. Conv. Res. of Japan Soc. Appl. Phys., 29a-YS-9 Digest III-p.1144, Kanagawa, Mar. 2002.

6.        Y. Onodera, T. Okamoto, N. Nunoya, S. Tamura and S. Arai, “Low Threshold Operation of Membrane BH-DFB Lasers,” 「半導体薄膜DFBレーザの低しきい値動作」 Nat. Conv. Res. of Japan Soc. Appl. Phys., 29a-YS-10 Digest III-p.1144, Kanagawa, Mar. 2002.

7.        H.-C. Kim, H. Kanjo, S. Tamura and S. Arai, “Distributed Reflector (DR) Laser with First Order Vertical Grating (VG),” 「一次垂直回折格子分布反射型(DR)レーザ」Nat. Conv. Res. of Japan Soc. Appl. Phys., 29a-YS-11 Digest III-p.1145, Kanagawa, Mar. 2002.

8.        S.-H. Jeong, H.-C. Kim, T. Mizumoto, J. Wiedmann, S. Arai, M. Takenaka, and Y. Nakano, “Polarization independent All-Optical Switching Device with DFB Waveguide Structure,” 「DFB導波路形偏光無依存全光スイッチ」Nat. Conv. Rec. of IEICE Japan, SC-4-4, Mar. 2002.

 

Quantum Coherent Electron Devices

 

Journal Papers

 

1.        N. Machida and K. Furuya, “Coherent Hot-Electron Emitter”, Jpn. J. Appl. Phys., Vol. 40, Part 1, No. 1, pp. 63-68, Jan. 2001.

2.        M. Nagase, K. Furuya and N. Machida, “Phase-Breaking Effect Appearing in the Current-Voltage Characteristics of Double-Barrier Resonant Tunneling Diodes –Theoretical Fitting Over Four Orders of Magnitude”, Jpn. J. Appl. Phys., Vol. 40, Part 1, No. 4B, pp. 3018-3022, Apr. 2001.

3.        B. Zhang, K. Furuya and S. Karasawa, "Theoretical Ratio of Hot Electron Current to Thermal Electron Current in Scanning Hot Electron", J. Appl. Phys., Vol. 89, No. 10, pp. 5516-5520, May 2001.

4.        M. Nagase, K. Furuya, N. Machida and M. Kurahashi, “Current Peak Characteristics of Triple-Barrier Resonant-Tunneling Diodes with and without Phase Breaking”, Jpn. J. Appl. Phys., Vol. 40, Part 1, No. 12, pp. 6753-6760, Dec. 2001.

5.        N. Machida, H. Tamura, and K. Furuya, “Numerical Simulation of Hot Electron Interference in Solid-State Biprism”, Springer Proceedings in Physics, Vol. 87, pp. 1723-1724, 2001.

6.        B. Zhang and K. Furuya, “Characterization of Hot Electron Transmission Tunneling through the Gap Potential in Scanning Hot Electron Microscopy”, Appl. Surf. Sci., Vol. 175-176, pp. 294-298, 2001.

 

International Conferences

 

1.        K. Furuya, M. Nagase and N. Machida, “Phase Breaking Effects Observed in I-V Curves of Resonant Tunneling Diodes”, Progress In Electromagnetics Research Symposium (PIERS 2001), pp. 401, Osaka, Japan, July 18-22, 2001.

2.        L.-E. Wernersson, R. Yamamoto, E. Lind, I. Pietzonka, W. Seifert, Y. Miyamoto, K. Furuya, and L. Samuelson, "Attractive Potential around a Buried Metallic Gate in a Schottky Collector Hot Electron Transistor", 28th International Symposium on Compound Semiconductors 2001 (ISCS2001), MoP-33, Tokyo, JAPAN, Oct., 2001.

 

Meeting Report

 

1.        N. Machida, K. Furuya, M. Fukasawa, K. Mae, T. Hirata and D. Miyamoto, “Proposal of a New Experiment for Observation of Electron Wave Diffraction by BEEM”, 「BEEMを用いた電子波回折観測法の提案」, Technical Report of IEICE, ED2001-234, SDM2001-237, pp. 13-18, Sapporo, Jan. 2002.

 

Domestic Conferences

 

1.        N. Machida and K. Furuya, “Possibility of Controling Electron Wavefront Spread by Taylored Semiconductor Heterostructures”, 「半導体ヘテロ構造による電子波面広がり制御の可能性」, Nat. Conv. Rec. of IEICE Japan, C-10-14, Digest II –p.76, Shiga, Mar. 2001.

2.        R. Yamamoto, Y. Miyamoto, K. Furuya, E. Lind, I. Pietzonka, L., Wernersson and L. Samuelson, “Modulation of Hot Electron Current by Buried Metal in i-GaAs”, 「ノンドープGaAs中の埋め込み金属電極によるホットエレクトロン電流変調」, Nat. Conv. Res. of Japan Soc. Appl. Phys., 29a-YD-3, Digest III -p.1338, Tokyo, Mar. 2001.

3.        N. Machida, M. Nagase and K. Furuya, “Comparison between Theories of Phase Breaking in Double-Barrier Resonant-Tunneling Structures", 「2重障壁共鳴構造における位相破壊理論の比較」, Nat. Conv. Res. of Japan Soc. Appl. Phys., 29a-YD-5, Digest III -p.1339, Tokyo, Mar. 2001.

4.        B. Y. Zhang, S. Karasawa, T. Hirata, Y. Miyamoto and K. Furuya, "Scanning Hot Electron Microscopy (SHEM) Experiment on DBRTD InGaAs/AlAs Heterostructure Emitter", Nat. Conv. Res. of Japan Soc. Appl. Phys., 29p-ZE-10, Digest II -p.688, Tokyo, Mar. 2001.

5.        H. Nagatsuka, N. Machida and K. Furuya, “Possibility of Estimating Temperature Dependence of Electron Phase Coherence by Double-Barrier Resonant-Tunneling Diode”, 「二重障壁共鳴トンネルダイオードによる電子位相コヒーレンスの温度特性評価の可能性」, Nat. Conv. Res. of Japan Soc. Appl. Phys., 14a-YB-8, Digest III -p.1053, Aichi, Sept. 2001.

6.        M. Nagase, N. Machida, M. Kurahashi and K. Furuya, “Analysis of Current Peak Width of Triple-Barrier Resonant Tunneling Diodes Using Phase Correlation Theory”, 「位相相関法を用いた三重障壁共鳴トンネルダイオードの電流ピーク幅解析」, Nat. Conv. Res. of Japan Soc. Appl. Phys., 14a-YB-9, Digest III -p.1053, Aichi, Sept. 2001.

7.        N. Machida and K. Furuya, “Reciprocity in Electron Wave Devices”, 「電子波デバイスの相反性」, Nat. Conv. Res. of Japan Soc. Appl. Phys., 14a-YB-11, Digest III -p.1054, Aichi, Sept. 2001.

8.        N. Machida and K. Furuya, “Proposal of a New Detection Experiment of Electron Interference in Solid by Using Scanning Probe”, 「走査探針による新しい固体電子干渉検出実験」, Nat. Conv. Rec. of IEICE Japan, C-10-1, Digest II –p. 37, Tokyo, Sept. 2001.

 

High-Speed Electron Devices Using Advanced Structures and Materials

 

Journal Papers

 

1.        M.Asada and N.Sashinaka, “Nonlinear Terahertz Gain Estimated from Multiphoton-Assisted Tunneling in Resonant Tunneling Diodes”, Jpn. J. Appl. Phys., vol.40, No.9, pp.5394-5398, Sept. 2001.

2.        M. Asada, “Density-Matrix Modeling of Terahertz Photon-Assisted Tunneling and Optical Gain in Resonant Tunneling Structures”, Jpn. J. Appl. Phys., vol.40, No.9, pp.5251-5256, Sept. 2001.

3.        T. Arai, S. Yamagami, Y. Miyamoto and K. Furuya, "Reduction of Base-Collector Capacitance in Submicron InP/GaInAs Heterojunction Bipolar Transistors with Buried Tungsten Wires", Jpn. J. Appl. Phys., Vol.40, Part 2, No. 7B, pp. L735-L737, July 2001.

4.        T. Arai, S. Yamagami, Y. Okuda, Y. Miyamoto and K. Furuya, "InP DHBT with 0.5µm wide emitter along <010> direction toward BM-HBT with narrow emitter", IEICE Trans. Electron., Vol. E84-C, No. 10, pp. 1394-1398, Oct. 2001.

5.        M. Asada, “Theoretical Analysis of Terahertz Harmonic Generation in Resonant Tunneling Diodes”, Jpn. J. Appl. Phys., vol.40, No.12, pp. 6809-6810, Dec. 2001.

6.        M. Tsutsui and M. Asada, “Dependence of Drain Current on Gate Oxide Thickness of P-type Vertical PtSi Schottky Source/Drain MOSFETs'', Jpn. J. Appl. Phys., vol. 41, No.1, pp.54-58, Jan. 2002.

7.        T. Morita, T. Arai, H. Nagatsuka, Y. Miyamoto, and K. Furuya, “Fabrication of InP/GaInAs Double Heterojunction Bipolar Transistors with a 0.1-mm-Wide Emitter”, Jpn. J. Appl. Phys., Vol. 41, No. 2A, pp. L121-L123, Feb. 2002.

8.        Y. Miyamoto and K. Furuya, “Techniques for High-Speed InP-Related Heterojunction Bipolar Transistors”, 「InP系ヘテロ接合バイポーラトランジスタの高速化技術」, OYOBUTURI, Vol. 71, No. 3, pp. 285-294, Mar. 2002.

9.        M. Tsutsui, T. Nagai and M. Asada, “Analysis and Fabrication of P-Type Vertical PtSi Schottky Source/Drain MOSFET'', to be published in IEICE Trans. Electro. of Jpn. (2002)

 

International Conference

 

1.        M. Asada and N. Sashinaka, “Nonlinear Terahertz Gain Estimated from Multiple Photon-Assisted Tunneling in Resonant Tunneling Diode”, International Conference on Indium Phosphide and Related Materials (IPRM-01), Nara, WP-29, May 2001.

2.        T. Arai, S. Yamagami, Y. Miyamoto and K. Furuya, "Submicron buried metal heterojunction bipolar transistors - Fabrication and CBC dependence on buried growth conditions -" 13th International Conference on Indium Phosphide and Related Materials (IPRM'01), Post Deadline Papers FA3-7, pp. 25-26, Nara, Japan, May 14-18, 2001.

3.        M. Asada, “Density-Matrix Modeling of THz Photon-Assisted Tunneling in Resonant Tunneling Diodes”, Advanced Research Workshop on Quantum Transport in Semiconductors, Maratea/Italy, G3-8, June 2001.

4.        T. Arai, T. Morita, H. Nagatuka, Y. Miyamoto and K. Furuya, "Fabrication of InP DHBT with 0.1 µm wide emitter" 59th Device Research Conference (DRC2001), III.-24, pp. 99-100, Notre dame, Indiana USA, June 25-27, 2001.

5.        M. Asada and N. Sashinaka, “Theoretical Analysis of THz Photon-Assisted Tunneling and Optical Gain in Resonant Tunneling Diodes”, 10th International Conference on Modulated Semiconductor Structures (MSS-10), Linz/Austria, ThP-56, July 2001.

 

Meeting Report

1.        M. Tsutsui, T. Nagai and M. Asada, “Fabrication of PtSi Schottky Source/Drain vertical MOSFET”, “垂直型ショットキーソースドレインMOSFETの作製”, Technical report of IEICE, ED2000-256, Sapporo, Jan. 2001.

 

Domestic Conferences

 

1.        T. Arai, S. Yamagami, T. Sakai, Y. Miyamoto and K. Furuya, "Reduction of collector resistance for high-speed operation in BM-HBT",「BM-HBT高速化のためのコレクタ抵抗の低減」, Nat. Conv. Rec. of The 48th Spring Meeting, Japan Soc. Appl. Phys., 28p-YC-8, Digest III-p.1386, Tokyo, Mar. 2001.

2.        N. Sashinaka, T. Abe and M. Asada, “共鳴トンネルダイオードを集積したTHz帯スロットアンテナアレイの共振特性”, “Oscillation Characteristics of Slot Antenna integrated Resonant Tunneling Diode for THz electro-magnetic wave”, Nat. Conv. Rec. of The 48th Spring Meeting of The Jpn. Soc. of Appl. Phys., 30p-ZR-2, Tokyo, Mar. 2001.

3.        M. Asada and N. Sashinaka, “共鳴トンネルダイオードの多光子フォトンアシストトンネルによるテラヘルツ光非線形利得”, “Nonlinear Terahertz Gain Estimated from Multiphoton-Assisted Tunneling in Resonant Tunneling Diodes”, Nat. Conv. Rec. of The 48th Spring Meeting of The Jpn. Soc. of Appl. Phys., 28p-YD-13, Tokyo, Mar. 2001.

4.        M. Saitoh, H. Sato and M. Asada, “SOI層の薄膜化によるp型Schottkyソース／ドレインMOSFETのon/off比向上”, “Improved On/Off ratio of P-type Schottky Source/Drain MOSFET by Thin SOI layer”, Nat. Conv. Rec. of The 48th Spring Meeting of The Jpn. Soc. of Appl. Phys., 30p-ZL-2, Tokyo, Mar. 2001.

5.        M. Tsutsui and M. Asada, “ゲート酸化膜薄膜化による縦型 P-Type PtSi Schottky Source/Drain MOSFET の特性向上”, “Improved Characteristics of P-Type Vertical PtSi Schottky Source/Drain MOSFET by Thin Gate Oxide”, Nat. Conv. Rec. of The 62th Autumn Meeting of The Jpn. Soc. of Appl. Phys., 13a-P9-15, Aichi, Sept. 2001.

6.        T. Arai, S. Yamagami, T. Sakai, Y. Miyamoto and K. Furuya, "Fabrication of buried metal heterojunction bipolar transistor with fine emitter by EB-lithography",「EB露光による微細金属埋め込みHBTの作製」, Nat. Conv. Rec. of The 62th Autumn Meeting, Japan Soc. Appl. Phys., 13p-ZF-8, Digest III-p.1068, Aichi, Sept. 2001.

7.        T. Morita, T. Arai, H. Nagatsuka, Y. Miyamoto and K. Furuya, "Fabrication of InP/GaInAs DHBT with 0.1µm wide emitter",「0.1µm幅エミッタを有するInP/GaInAs系DHBTの作製」, Nat. Conv. Rec. of The 62th Autumn Meeting, Japan Soc. Appl. Phys., 13p-ZF-9, Digest III-p.1068, Aichi, Sept. 2001.

8.        M. Asada, “テラヘルツ波の増幅・発振デバイス”, “Amplification and Oscillation devices for THz electro-magnetic waves”, Nat. Conv. Rec. of The 49th Spring Meeting of The Jpn. Soc. of Appl. Phys., 27p-YR-3, Digest 0-p.30, Kanagawa, Mar. 2002.

 

Light Emitting Devices Using Advanced Structures and Materials

 

Journal of Papers

 

1.      T, Maruyama, N. Nakamura and M. Watanabe, “Theoretical Analysis of Threshold Current Density in BeMgZnSe Quantum Well Ultra-violet Lasers,” Jpn, J. Appl. Phys., vol. 40, no. 12, pp. 6872-6873, Dec. 2001

 

International Conferences

 

1.           M. Watanabe, N. Sakamaki, and T. Ishikawa, “Room Temperature Negative Differential Resistance with High Peak-to-Valley Crrent Ratio of CdF2/CaF2 Resonant Tunneling Diode on Silicon,” Thirteenth International Conference on Indiumu Phosphide and Related Materials (IPRM'01), WP-30, pp.244-247, Nara, Japan, May 14-18, 2001.

2.           M. Watanabe, N. Sakamaki, T. Ishikawa, and D. Okamoto, “Selective growth of CdF2/CaF2 resonant tunneling diode nanostructure on Si,” 43rd 2001 Electronic Materials Conference (EMC), Y4, pp.55-56, Notre Dame, U.S.A., June 27-29, 2001.

3.           T. Maruyama, N. Nakamura, and M. Watanabe, “Epitaxial growth of BeZnSe on CaF2/Si(111) substrate,” 43rd 2001 Electronic Materials Conference, Y3, pp.55-55, Notre Dame, U.S.A., June 27-29, 2001.

4.           M. Watanabe, N. Sakamaki, and T. Ishikawa, “Fine-Area Epitaxy of CdF2/CaF2 Resonant Tunneling Diode on Si,” the First International Workshop on Quantum Nonplanar Nanostructureｓ & Nanoelectronics '01 (QNN '01), TuP-29, pp.185-186, Tsukuba, Japan, July 2-4, 2001.

5.           M. Watanabe, N. Sakamaki, and T. Ishikawa, “Feasibility study of CdF2/CaF2 intersubband transition lasers,” The 4th Pacific Rim Conference on Lasers and Electro-Optics (CLEO), WC1-5, pp.II-40-II-41, Chiba，Japan, July 15-19, 2001.

6.           M. Watanabe and M. Asada, “CaF2/CdF2 Resonant Tunneling Devices with High Peak-to-Valley Ratio on Silicon Substrate (Invited),” Frontier Science Research Conference, Science and Technology of Silicon Materials, S-II, pp.-, LaJolla/CA, Aug. 13-15, 2001.

 

Meeting Report

 

1.        M. Watanabe, T. Ishikawa, M. Matsuda, T. Kanazawa, and M. Asada, “CdF2/CaF2 Resonant Tunneling Diode Grown on Si(111) and Si(100) Substrate using Nano-area Epitaxy,” 「ナノ領域成長によるSi(111)及びSi(100)基板上CdF2/CaF2共鳴トンネルダイオード」 , Technical Report of IEICE, ED2001-242, SDM2001-245, pp.65-70, Sapporo, Jan. 2002.

 

Domestic Conferences

 

1.                  T. Maruyama, N. Nakamura and M. Watanabe, "Epitaxial Growth of BeZnSe on CaF2/Si(111) Substrate", 「CaF2/Si(111)基板上へのBeZnSeエピタキシャル成長」, Ext. Abstr. (48th Spring Meet., 2001); Japan Society of Applied Physics and Related Societies, Digest I, p.319, 28p-K-13, Tokyo, March, 2001.

2.                  M. Suzuki, S. Okano and M. Watanabe, " Oxygen Ambient Annealing of ZnO Thin Films on CaF2/Si Substrate ", 「CaF2/Si基板上へZnO薄膜の酸素雰囲気中アニール」, Ext. Abstr. (48th Spring Meet., 2001); Japan Society of Applied Physics and Related Societies, Digest III, p.1438, 31a-YL-2, Tokyo, March, 2001.

3.                  S. Okano, M. Suzuki and M. Watanabe, "Impurity Control of Eptaxial ZnO Thin Films Grown on CaF2/Si(111) by N, Ga Codoping ", 「CaF2/Si(111)基板上ZnO薄膜のN, Gaコドーピング法による不純物制御」, Ext. Abstr. (48th Spring Meet., 2001); Japan Society of Applied Physics and Related Societies, Digest III, p.1438, 31a-YL-3, Tokyo, March, 2001.

4.                  T. Ishikawa, N. Sakamaki, D. Okamoto and M. Watanabe, "Fabrication and Characterization of CdF2/CaF2 Resonant Tunneling Diode by Selective Area Growth", 「ナノ領域選択成長によるCdF2/CaF2共鳴トンネルダイオードの作製と評価」, Ext. Abstr. (48th Spring Meet., 2001); Japan Society of Applied Physics and Related Societies, Digest III, p. 1338, 29a-YD-2, Tokyo, March, 2001.

5.                  T. Maruyama, N. Nakamura, Y. Niiyama and M. Watanabe, “UV Photoluminescence from BeZnSe Grown on GaP(001) Substrate at Room Temperature,” 「GaP(001)基板上に成長したBeZnSeからの室温紫外線PL発光」, Ext. Abstr. (62nd Autumn Meet., 2001); Japan Society of Applied Physics, Digest I, p. 207, 11aP1-2, Aichi, Sept. 2001

6.                  N. Nakamura, Y. Niiyama, T. Maruyama, and M. Watanabe, “Epitaxial Growth of BeMgZnSe on GaP(001) Substrate,” 「GaP(001)基板上へのBeMgZnSeエピタキシャル成長」, Ext. Abstr. (62nd Autumn Meet., 2001); Japan Society of Applied Physics, Digest I, p. 207, 11aP1-3, Aichi, Sept. 2001

7.                  M. Matsuda, T. Ishikawa, T. Kanazawa, M. Watanabe, and M. Asada, "Fabrication and characterization of CdF2/CaF2 resonant tunneling diode on Si(100) substrate," 「Si(100)基板上CdF2/CaF2共鳴トンネルダイオードの作製と評価」The 49th Spring Meeting of The Jpn. Soc. Of Appl. Phys. And Related Societies, 27p-YH-3, Digest III-p.1374, Kanagawa, Mar. 2002.

 

Processing for Nanometer Structures

 

International Conferences

 

1.             Y. Miyamoto, H. Oguchi, H. Nakamura, Y. Ninomiya and K. Furuya, “Isolation of 80 nm periodical Au/Ti/n-GaInAs ohmic contacts”, 20th Electronic Materials Symposium (EMS20), B3, pp. 23-24, Nara, Japan, June 20-22, 2001.

2.             Y. Miyamoto, H. Oguchi, H. Nakamura, Y. Ninomiya and K. Furuya, “80 nm periodical ohmic contacts toward Young’s double slit experiment using a semiconductor”, 1st International Workshop on Quantum Nonplanar Nanostructures & Nanoelectronics ‘01 (QNN’01), TuP-31, pp. 189-190, Tsukuba, Japan July 2-4, 2001.

 

Domestic Conferences

 

1.      H. Nakamura, H. Oguchi, Y. Ninomiya, Y. Miyamoto and K. Furuya, "Isolation of 80nm periodical Au/Ti/n-GaInAs ohmic contacts",「80nm周期Au/Ti/n-GaInAsオーミック電極のアイソレーション」, Nat. Conv. Rec. of The 62th Autumn Meeting, Japan Soc. Appl. Phys., 14a-YB-10, Digest III-p.1053, Aichi, Sept. 2001.

2.      Y. Ninomiya, H. Nakamura, Y. Miyamoto, N. Machida and K. Furuya, "Current modulation in fine electrode by hot electron passing through GaInAs/InP double slits",「GaInAs/InPダブルスリットを通過したホットエレクトロンの電流変調」, Nat. Conv. Rec. of The 49th Spring Meeting, Japan Soc. Appl. Phys., 27p-YH-16, Digest III-p.1378, Kanagawa, Mar. 2002.