LIST OF REPORTS

 

Quantum-Film, Quantum-Wire, and Quantum-Box Lasers

 

Journal Papers

 

1.         H. Yagi, K. Muranushi, N. Nunoya, T. Sano, S. Tamura and S. Arai, “GaInAsP/InP Strain-Compensated Quantum-Wire Lasers Fabricated by CH4/H2 Dry Etching and Organometallic Vapor-Phase-Epitaxial Regrowth,” Jpn. J. Appl. Phys., vol. 41, part 2, no. 2B, pp. L186-189, Feb. 2002.

2.         K. Ohira, N. Nunoya, S. Tamura and S. Arai, “Distributed Reflector Laser with Wirelike Active Regions for Asymmetric Output Property,” Jpn. J. Appl. Phys., vol. 41, part 1, no. 3A, pp. 1417-1418, Mar. 2002.

3.         V. M. Kaganer, B. Jenichen, G. Paris, K. H. Ploog, O. Konovalov, P. Mikulík, and S. Arai, “Strain in Buried Quantum Wires: Analytical Calculations and X-Ray Diffraction Study,” Phys. Rev. B, vol. 66, no. 3, pp. 035310 (7pages), July 2002.

4.         H. Yagi, K. Muranushi, N. Nunoya, T. Sano, S. Tamura and S. Arai, “Low-Damage Etched/Regrown Interface of Strain-Compensated GaInAsP/InP Quantum-Wire Laser Fabricated by CH­4/H2 Dry Etching and Regrowth,” Appl. Phys. Lett., , vol. 81, no. 6, pp. 966-968, Aug. 2002.

5.         K. Ohira, N. Nunoya, H. Yagi, K. Muranushi, A. Onomura, S. Tamura and S. Arai, “Reliable Operation of GaInAsP/InP Distributed Feedback Laser with Wirelike Active Regions,” Jpn. J. Appl. Phys., vol. 42, part 1, no. 2A, pp. 475-476, Feb. 2003.

6.         T. Sano, H. Yagi, K. Muranushi, S. Tamura, T. Maruyama, A. Haque and S. Arai, “Multiple-Quantum-Wire Structures with Good Size Uniformity Fabricated by CH4/H2 Dry Etching and Organometallic Vapor-Phase-Epitaxial Regrowth,” to be published in Jpn. J. Appl. Phys., 2003.

 

International Conferences

 

1.         N. Nunoya, K. Ohira, H. Midorikawa, K. Muranushi, and S. Arai, “CW Life Test of Gain-Matched DFB Laser with Wire-Like Active Regions,” Fifth International Symposium on Contemporary Photonics Technology (CPT 2002), E-12, pp. 83-84, Tokyo (Japan), Jan. 2002.

2.         H. Yagi, K. Muranushi, N. Nunoya, T. Sano, N. Nunoya, S. Tamura and S. Arai, “Large Blue Shift in GaInAsP/InP Vertically-Stacked Multiple-Quantum-Wire-Lasers by Dry Etching and Regrowth Processes,” The 14th Indium Phosphide and Related Materials Conference (IPRM2002), A9-4, pp. 723-726, Stockholm (Sweden), May 2002.

3.         H. Yagi, K. Muranushi, T. Sano, N. Nunoya, S. Tamura and S. Arai, “GaInAsP/InP Multiple-Quantum-Wire Lasers by CH4/H2 Reactive Ion Etching,” The 7th Optoelectronics and Communications Conference (OECC2002), Yokohama (Japan), 10C3-4, pp. 158-159, July 2002.

4.         N. Nunoya, K. Ohira, H. Yagi, K. Muranushi, A. Onomura, T. Sano and S. Arai, “Reliable Operation of Sub-mA Threshold DFB Lasers with Wirelike Active Regions,” The 7th Optoelectronics and Communications Conference (OECC2002), Yokohama (Japan), 10P-60, pp. 306-307, July 2002.

5.         H. Yagi, T. Sano, K. Ohira, T. Maruyama, A. Haque and S. Arai, “ RT-CW Operation of GaInAsP/InP Quantum-Wire Lasers Fabricated by Dry Etching and Regrowth Method,” Sixth International Symposium on Contemporary Photonics Technology (CPT 2003), PDP-1, pp. 1 (PD), Tokyo (Japan), Jan. 2003.

6.         K. Ohira, T. Murayama, H. Yagi, S. Tamura and S. Arai, “New Type Distributed Reflector Laser with Passive DBR Section By Using Lateral Confinement Effect,” Sixth International Symposium on Contemporary Photonics Technology (CPT2003), PDP-3, pp. 3(PD), Tokyo (Japan), Jan. 2003.

 

Meeting Reports

 

1.         K. Ohira, N. Nunoya, A. Onomura, H. Yagi, S. Tamura and S. Arai, “Distributed Reflector (DR) Laser with Wire Structure,” 「細線構造を有する分布反射型(DR)レーザ」Technical Report of IEICE, LQE2002-16 (2002-05), pp.61-64, Fukui (Japan), May 2002.

2.         H. Yagi, K. Muranushi, T. Sano, N. Nunoya, S. Tamura and S. Arai, “GaInAsP/InP Strain-Compensated Multiple-Quantum-Wire Lasers Fabricated by Dry Etching and Regrowth,” 「ドライエッチングと埋め込み再成長法によるGaInAsP/InP歪補償多層量子細線レーザ」 Technical Report of IEICE, OPE2002-42/LQE2002-97 (2002-06), p.27-30, Tokyo (Japan), July 2002.

 

Domestic Conferences

 

1.         K. Ohira, N. Nunoya, A. Onomura and S. Arai, “Influence of a Phase Shift on DFB Laser with Wirelike Active Regions,” 「活性層分離型DFBレーザにおける位相シフトの効果」 The 49th Spring Meeting, 2002; The Japan Society of Applied Physics and Related Societies, 29a-YS-7, pp. 1143, Kanagawa, Mar. 2002.

2.         N. Nunoya, K. Ohira, A. Onomura and S. Arai, “Sub-mode suppression ratio (SMSR) of DFB lasers with wirelike active regions,” ｢活性層分離型DFBレーザの副モード抑圧比(SMSR)｣ The 49th Spring Meeting, 2002; The Japan Society of Applied Physics and Related Societies, 29a-YS-8, pp. 1144, Kanagawa, Mar. 2002.

3.         K. Muranushi, H. Yagi, T. Sano, N. Nunoya, S. Tamura and S. Arai, “Realization of Narrow Wire Width Multiple-Layered Quantum-Wire Laser,” 「狭細線幅多層量子細線レーザの実現」 The 49th Spring Meeting, 2002; The Japan Society of Applied Physics and Related Societies, 29a-YS-13, pp. 1145, Kanagawa, Mar. 2002.

4.         H. Yagi, K. Muranushi, N. Nunoya, T. Sano, S. Tamura and S. Arai, “Wire Width Dependence of Blue Shift in Strain-Compensated GaInAsP/InP Quantum-Wire Lasers,” ｢GaInAsP/InP歪補償量子細線レーザのブルーシフト量の細線幅依存性｣ The 49th Spring Meeting, 2002; The Japan Society of Applied Physics and Related Societies, 29p-YH-8, pp. 1394, Kanagawa, Mar. 2002.

5.         H. Yagi, T. Sano, K. Muranushi, S. Tamura, T. Maruyama, A. Haque and S. Arai, “Wire Width Dependence of Threshold Current Density in Strain-Compensated GaInAsP/InP Multiple-Quantum-Wire Lasers,” 「GaInAsP/InP歪補償多層量子細線レーザのしきい値電流密度の細線幅依存性」 The 63rd Autumn Meeting, 2002; The Japan Society of Applied Physics, 26p-A-10, pp. 995 Niigata, Sep. 2002.

6.         K. Ohira, N. Nunoya, A. Onomura, H. Yagi, T. Sano, S. Tamura and S. Arai, “Distributed Reflector (DR) Laser with Wire Structure,” 「細線構造を有する分布反射型(DR)レーザ」 The 63rd Autumn Meeting, 2002; The Japan Society Applied. Physics, 26p-A-14, pp. 997, Niigata, Sep. 2002.

7.         T. Sano, H. Yagi, K. Muranushi, S. Tamura, T. Maruyama, A. Haque and S. Arai, “Multiple-Quantum-Wire Structure with Good Size Uniformity Fabricated by CH4/H2 Dry Etching,” 「CH4/H2ドライエッチングによるサイズ均一性に優れた多層量子細線構造」 The 63rd Autumn Meeting, 2002; The Japan Society of Applied Physics, 25a-ZB-3, pp. 1224, Niigata, Sep. 2002.

8.         H. Yagi, T. Sano, K. Ohira, T. Maruyama, A. Haque, S. Tamura and S. Arai,” Room-Temperature Continuous Wave Operation of GaInAsP/InP Strain-Compensated Multiple-Quantum-Wire Lasers,” 「GaInAsP/InP歪補償多層量子細線レーザの室温連続発振」The 50th Spring Meeting, 2003; The Japanese Society of Applied Physics and Related Societies, 28a-YF-4, pp. 1233, Kanagawa, Mar. 2003.

9.         K. Ohira, T. Murayama, H. Yagi, S. Tamura and S. Arai, “Distributed Reflector (DR) Laser with Passive Section Using Lateral Quantum Confinement Effect,” 「横方向量子閉じ込め効果を用いた受動領域を有する分布反射型(DR)レーザ」The 50th Spring Meeting, 2003; The Japanese Society of Applied Physics and Related Societies, 28p-ZQ-14, pp. 1240, Kanagawa, Mar. 2003.

10.     A. Haque, H. Yagi, T. Sano, T. Maruyama and S. Arai,” Band Structure Analysis of Strained Quantum-Wires with Strain-Compensating Barriers Using 8 Band k.p Theory,”　「8 ´ 8行列k·p法による歪補償量子細線のバンド構造解析」The 50th Spring Meeting, 2003; The Japanese Society of Applied Physics and Related Societies, 28p-ZE-14, pp. 1466, Kanagawa, Mar. 2003.

11.     T. Maruyama, A. Haque, T. Sano, H. Yagi and S. Arai,” Analysis of Polarization Dependence in Strained Quantum-Wire Structures,”「歪量子細線構造における偏光依存性の解析」The 50th Spring Meeting, 2003; The Japanese Society of Applied Physics and Related Societies, 28p-ZE-15, pp. 1466, Kanagawa, Mar. 2003.

 

New Types of Semiconductor Lasers for Photonic Integration

 

Journal Papers

 

1.         T. Okamoto, N. Nunoya, Y. Onodera, S. Tamura and S. Arai, “Single-Mode Operation of Optically Pumped Membrane Buried Heterostructure Distributed-Feedback Lasers,” Jpn. J. Appl. Phys., vol. 41, part 2, no. 3A, pp. L249-L251, Mar. 2002.

2.         J. Shim, J. Kim, D. Jang, Y. Eo and S. Arai, “Facet reflectivity of a spot-size-converter integrated semiconductor optical amplifier,” IEEE J. Quantum Electron., vol. 38, no. 6, pp. 665-673 June 2002.

3.         S.-H. Jeong, H.-C. Kim. T. Mizumoto, J. Wiedmann, S. Arai, M. Takenaka and Y. Nakano, “Polarization-Independent All-Optical Switching in a Nonlinear GaInAsP-InP Highmesa Waveguide with a Vertically Etched Bragg Reflector,” IEEE J. Quantum Electron., vol. 38, no. 7, pp. 706-715, July 2002.

4.         T. Okamoto, N. Nunoya, Y. Onodera, S. Tamura and S. Arai, “Low-Threshold Singlemode Operation of Membrane BH-DFB Lasers,” Electron. Lett., vol. 38, no. 23, pp. 1444-1446, Nov. 2002.

5.         H.-C. Kim, H. Kanjo, S. Tamura and S. Arai, “Distributed Reflector Lasers with First-Order Vertical Grating and Second-Order Bragg Reflectors,” Jpn. J. Appl. Phys., vol. 41, no.12, part 1, no. 12, pp. 7396-7397, Dec. 2002.

 

International Conferences

 

1.       S.-H. Jeong, H.-C. Kim, T. Mizumoto, J. Wiedmann, S. Arai, M. Takenaka, Y. Nakano, “Demonstration of Polarization Insensitive All-Optical Switching in a Highmesa Distributed Feedback Waveguide,” Fifth International Symposium on Contemporary Photonics Technology (CPT2002), Tokyo (Japan), B-5, pp. 31-32, Jan. 2002.

2.       T. Okamoto, N. Nunoya, Y. Onodera, S. Tamura and S. Arai, “1550nm Wavelength Membrane DFB Laser Cladded by BCB Polymer,” Fifth 5th International Symposium on Contemporary Photonics Technology (CPT2002), Tokyo (Japan), E-21, pp. 101-102, Jan. 2002.

3.       S.-H. Jeong, T. Mizumoto, H.-C. Kim, J. Wiedmann, S. Arai, M. Takenaka and Y. Nakano, “Polarization Independent All-Optical Switching Employing Nonlinear Vertical-Groove DFB Waveguide,” Conference on Optical Fiber Communications (OFC2002), Anaheim (USA), TuU3, pp. 140-142 , Mar. 2002.

4.       T. Okamoto, N. Nunoya, Y. Onodera, S. Tamura and S. Arai, “Low Threshold Operation of Membrane Buried Heterostructure Distributed Feedback Laser,” The 14th Indium Phosphide and Related Materials Conf. (IPRM2002), Stockholm (Sweden), PI-4, pp. 115-118, May 2002.

5.       S. Arai, “InP-Based Fine-Structuring Techniques for Photonic Devices,”(Invited) The 14th Indium Phosphide and Related Materials Conference (IPRM2002), A6-6, pp. 433-436, Stockholm (Sweden), May 2002.

6.       S.-H. Jeong, T. Mizumoto, H.-C. Kim, J. Wiedmann, S. Arai, M. Takenaka and Y. Nakano, “All-Optical Polarization Independent Switching in a Nonlinear DFB Waveguide with Vertically Etched Grating,” The 22nd Annual Conference on Lasers and Electro-Optics and the 10th Quantum Electronics and Laser Science Conference (CLEO/QELS 2002), CMB2, pp. 7-8, Long Beach (USA), May 2002.

7.       S.-H. Jeong, H.-C. Kim. T. Mizumoto, J. Wiedmann, S. Arai, M. Takenaka and Y. Nakano, “Polarization Independent Switching Characteristics in a Passive Highmesa Waveguide with Vertically Etched Bragg Reflector,” Conference on Optical Internet and Photonics in Switching (COIN+PS 2002), Cheju Island (Korea), PS.MoB5, pp. 46-48, July 2002.

8.       H.-C Kim, H. Kanjo, S. Tamura and S. Arai, “Distributed Reflector Lasers with Deeply Etched First Order Vertical Grating,” The 7th Optoelectronics and Communications Conference (OECC2002), Yokohama (Japan), 10C3-3, pp. 156-157, July 2002.

9.       S. Arai, H.-C. Kim and J. Wiedmann, “Functional Optical Devices Using Vertical Grooved DFB and DBR Structures,” (Invited), SPIE’s ITCom2002, Proc. SPIE vol. 4870, pp. 144-152, Boston (USA), July 2002.

10.   H.-C. Kim, H. Kanjo, S. Tamura and S. Arai, “Narrow Stripe Distributed Reflector Lasers with First-Order Vertical Grating,” 2002 IEEE 18th International Semiconductor Laser Conference, Garmisch-Partenkirchen (Germany), MC1, pp. 19-20, Sep 2002.

 

Meeting Reports

 

1.       S.-H. Jeong, H.-C. Kim, T. Mizumoto, J. Wiedmann, S. Arai, M. Takenaka, Y. Nakano, “All-Optical Polarization Independent Operation in a Nonlinear DFB Waveguide Switch,” 「DFB導波路全光スイッチの偏光無依存動作特性」Technical Report of IEICE, PS 2001-87, OFT 2001-84, OPE 2001-128, LQE 2001-114 (2002-01), pp. 55-60, Fukuoka (Japan), Jan. 2002.

2.       H.-C. Kim, H. Kanjo, S. Tamura, S. Arai, “1.5 mm Wavelength Distributed Reflector Lasers with Deeply Etched Vertical Gratings,” 「垂直回折格子を有する1.5mm波長分布反射型レーザ」Technical Report of IEICE, LQE2002-16 (2002-05), pp.61-64, Fukui (Japan), May 2002.

 

Domestic Conferences

 

1.         S.-H. Jeong, H.-C. Kim, T. Mizumoto, J. Wiedmann, S. Arai, M. Takenaka and Y. Nakano, 「DFB導波路型偏光無依存全光スイッチ」 2002 IEICE General Conference, SC-4-4, Tokyo, Mar. 2002.

2.         T. Okamoto, N. Nunoya, Y. Onodera, S. Tamura and S. Arai, “Single-Mode Operation of Optically Pumped Membrane BH-DFB Lasers,” 「BH構造を導入した光励起半導体薄膜DFBレーザの単一モード動作」 The 49th Spring Meeting, 2002; The Japan Society of Applied Physics and Related Societies, 29a-YS-9, pp. 1144, Kanagawa, Mar. 2002.

3.         Y. Onodera, T. Okamoto, N. Nunoya, S. Tamura and S. Arai, “Low Threshold Operation of Membrane BH-DFB Lasers,” 「半導体薄膜DFBレーザの低しきい値動作」The 49th Spring Meeting, 2002; The Japan Society of Applied Physics and Related Societies, 29a-YS-10, pp. 1144, Kanagawa, Mar. 2002.

4.         H.-C. Kim, H. Kanjo, S. Tamura and S. Arai, “Distributed Reflector (DR) Laser with First Order Vertical Grating (VG),” 「一次垂直回折格子分布反射型(DR)レーザ」The 49th Spring Meeting, 2002; The Japan Society of Applied Physics and Related Societies, 29a-YS-11, pp. 1145, Kanagawa, Mar. 2002.

5.         T. Okamoto, Y. Onodera, T. Yamazaki, S. Tamura and S. Arai, “Proposal of Multiple Wavelength Membrane DFB Laser Array,” 「位相シフト変調型半導体薄膜DFB多波長アレイ光源の提案」 The 63rd Autumn Meeting, 2002; The Japan Society of Applied Physics, 26p-A-12, pp. 996, Niigata, Sep. 2002.

6.         H.-C. Kim, H. Kanjo, S. Tamura and S. Arai, “Low Threshold Current Operation of Vertical-Grating Distributed-Reflector (VG-DR) Laser,” 「垂直回折格子を有する分布反射型(VG-DR)レーザの低しきい値電流動作」The 63rd Autumn Meeting, 2002; The Japan Society of Applied Physics, 26p-A-15, pp. 997, Niigata, Sep. 2002.

7.         H. Kanjo, H.-C. Kim, S. Tamura, S. Arai, “Facet Phase Control of Vertical-Grating Distributed-Reflector (VG-DR) Laser,” 「垂直回折格子を有する分布反射型(VG-DR)レーザの端面位相制御」 The 50th Spring Meeting, 2003; The Japan Society of Applied Physics and Related Societies, 28p-ZQ-13, pp. 1240, Kanagawa, Mar. 2003.

8.         T. Okamoto, Y. Onodera, T. Yamazaki, S. Tamura and S. Arai, “Wavelength Controllability of Membrane BH-DFB Lasers,” 「半導体薄膜BH-DFBレーザの波長制御性」 The 50th Spring Meeting, 2003; The Japan Society of Applied Physics and Related Societies, 28p-ZQ-16, pp. 1241, Kanagawa, Mar. 2003.

9.         T. Okamoto, Y. Onodera, T. Yamazaki, S. Tamura and S. Arai, “Fabrication of Multiple Wavelength Membrane BH-DFB Laser Array,” 「半導体薄膜BH-DFB多波長レーザアレイの試作」 The 50th Spring Meeting, 2003; The Japan Society of Applied Physics and Related Societies, 28p-ZQ-17, pp. 1241, Kanagawa, Mar. 2003.

 

Quantum Coherent Electron Devices

 

Journal Papers

 

1.         N. Machida, H. Nagatsuka, M. Nagase, and K. Furuya, "Phase Coherence and Temperature Dependence of Current-Voltage Characteristics at Low-Current and Low-Voltage Region of Double-Barrier Resonant-Tunneling Diode", Jpn. J. Appl. Phys., Vol. 41, No. 7A, pp. 4469-4473, 2002.

 

International Conferences

 

1.         Y. Miyamoto, H. Nakamura, Y. Ninomiya, H. Oguchi, N. Machida, and K. Furuya, "Current modulation in fine electrode by hot electron passing through GaInAs/InP double slits", 14th International Conference on Indium Phosphide and Related Materials, PII-24, Stockholm, Sweden, May 12-16, 2002.

2.         N. Machida, M. Fukasawa, and K. Furuya, "Numerical Simulation toward Observation of Electron Wave Diffraction by Ballistic Electron Emission Microscope", 7th International Conference on Nanometer-Scale Science and Technology (NANO-7), 21st European Conference on Surface Science (ECOSS-21), TH-P-091, Malmo, Sweden, June 24-28, 2002.

 

Meeting Report

 

1.         N. Machida, K. Furuya, M. Fukasawa, K. Mae, T. Hirata and D. Miyamoto, “Proposal of a New Experiment for Observation of Electron Wave Diffraction by BEEM”, 「BEEMを用いた電子波回折観測法の提案」, Technical Report of IEICE, ED2001-234, SDM2001-237, pp. 13-18, Sapporo, Jan. 2002.

 

Domestic Conferences

 

1.         N. Machida, Y. Ninomiya, H. Nakamura, Y. Miyamoto and K. Furuya, "Theoretical Explanation of Current Modulation by Magnetic Field Observed in Hot-Electron Double-Slit Experiment", G-10, 21st Electronic Materials Symposium (EMS-21), Izu-Nagaoka, June 19-21, 2002.

2.         Y. Ninomiya, H. Nakamura, Y. Miyamoto, N. Machida and K. Furuya, “Current Modulation in Fine Electrode by Hot Electron Passing through GaInAs/InP Double Slits”, 「GaInAs/InPダブルスリットを通過したホットエレクトロンの電流変調」, Nat. Conv. Res. of Japan Soc. Appl. Phys., 27p-YH-16, Digest III -p.1378, Kanagawa, Mar. 2002.

3.         H. Nagatsuka, N. Machida and K. Furuya, "Influence of Structural Inhomogeneity in Phase Coherence Estimation Using Double Barrier", 「二重障壁共鳴を用いた位相コヒーレンス評価における構造不均一の影響」, Nat. Conv. Res. of Japan Soc. Appl. Phys., 25p-P9-8, Digest III -p.1202, Niigata, Sept. 2002.

4.         N. Machida and K. Furuya, “Analysis of 3 Dimensional BEEM Transfer Efficiencies in Phase Shifter Devices”, 「位相シフタ干渉デバイスにおける3次元 BEEM転送効率の解析」, Nat. Conv. Res. of Japan Soc. Appl. Phys., 25p-P9-9, Digest III -p.1203, Niigata, Sept. 2002.

5.         N. Machida, K. Furuya, Y. Miyamoto and H. Maeda, “Numerical Simulation of Ballistic Transport Produced by Modulated Hetero-Nano Structure”, 「超ヘテロナノ構造によるバリスティック伝導の数値シミュレーション」, Nat. Conv. Res. of Japan Soc. Appl. Phys., 29a-ZE-10, Digest III -p.1471, Kanagawa, Mar. 2003.

 

High-Speed Electron Devices Using Advanced Structures and Materials

 

Journal Papers

 

1.         M.Tsutsui and M.Asada: “Dependence of Drain Current on Gate Oxide Thickness of p-type Vertical PtSi Schottky Source/Drain MOSFETs”, Japan.J.Appl. Phys., vol.41, No.1, pp.54-58 Jan. 2002.

2.         T. Morita, T. Arai, H. Nagatsuka, Y. Miyamoto and K. Furuya, "Fabrication of InP/GaInAs Double Heterojunction Bipolar Transistors with 0.1-um-Wide Emitter" Jpn. J. Appl. Phys., vol.41, no.2A, pp. L121-L123, 2002.

3.         Y. Miyamoto and K. Furuya, “Techniques for High-Speed InP-Related Heterojunction Bipolar Transistors”, 「InP系ヘテロ接合バイポーラトランジスタの高速化技術」, OYOBUTURI, Vol. 71, No. 3, pp. 285-294, Mar. 2002.

4.         M. Tsutsui, T. Nagai, and M. Asada: “Analysis and Fabrication of p-type Vertical PtSi Schottky Source/Drain MOSFET”, Trans. Electron. IEICE of Japan, vol.E85-C, No.5, pp.1191-1199 May 2002.

5.         M.Asada, “Quantum theory of a semiconductor klystron”, Phys. Rev. B, vol.67, No.11, pp.115303 1-8, Mar. 2003.

6.         M.Asada, “Theory of superradiance from photon-assisted tunneling electrons and its application to a terahertz device”, to be published in J. Appl. Phys.

 

International Conference

 

1.         Y. Miyamoto, R. Yamamoto, H. Maeda, K. Takeuchi, L. -E. Wernersson and K. Furuya, “InP Hot Electron Transistor with a Buried Metallic Gate for Electron Emission”, 60th Annual Device Research Conference, III-20, Santa Barbara, California, June 24-26, 2002.

2.         Y. Miyamoto, T. Arai, S. Yamagami, K. Matsuda and K. Furuya, "Evaluation of Base-collector Capacitance in Submicron Buried Metal Heterojunction Bipolar Transistors", The 2002 International Conference on Solid State Devices and Materials, E-1-4, Nagoya, Japan, Sept., 2002.

3.         K. Takeuchi, R. Yamamoto, H. Maeda, Y. Miyamoto and K. Furuya, "Freestanding Tungten Wires for BM-HET", 2002 International Microprocesses and Nanotechnology Conference, 6B-3-4, Tokyo, Japan, November 6-8, 2002.

4.         Y. Majima, K. Sasao, Y. Azuma and Y. Miyamoto, "Fabrication and I-V Characteristics of Metal/SAM/Metal Devices", 2002 International Microprocesses and Nanotechnology Conference, 6B-3-7, Tokyo, Japan, November 6-8, 2002.

5.         K.Yokoyama, Y.Miyamoto, T.Morita, T.Arai, K.Matsuda and K.Furuya, "Wet Etching for Self-Aligned 0.1-mm-wide Emitter in InP/InGaAs HBT", Topical Workshop on Heterostructure Microelectronics (TWHM'03), W-11, Okinawa, Japan, Jan., 2003.

6.         Y. Miyamoto, K. Sasao, Y. Azuma, N. Kaneda and Y. Majima, "Small Au/SAM/Au Junctions by EB Lithography"(Invited), Quantum Sensing, Evolution and Revolution from Past to Future, Photonic West, 4999-37, San Jose, USA, Jan., 2003.

 

Meeting Report

1.         M. Asada, “Photon-Assisted Tunneling in Quantum-Well Structures and Its Application to Terahertz Devices” 「量子井戸構造のフォトンアシストトンネルとテラヘルツデバイス応用」 (Invited) Tech. Rep. of Meeting on Electron Devices, IEICE, ED2001-238, Sapporo, Jan. 2002.

2.         M.Asada, “A Comprehensive Analysis of Traveling-Wave Directional Amplifiers and Its Application to Possibility of Solid-State Terahertz Devices”, 「進行波型一方向性増幅器の一般的解析と固体テラヘルツ素子の可能性」, to be presented at Tech. Rep. of Meeting on Lasers and Quantum Electronics, IEICE, Kanazawa, May 2003.

 

Domestic Conferences

 

1.         M.Asada, “Optoelectronic Devices for Terahertz Amplifiers and Oscillators”, 「テラヘルツ波の増幅・発振デバイス」 Nat. Conv. Res. of Japan Soc. Appl. Phys., 27p-YR-3, Digest 0 –p.30, Kanagawa, Mar. 2002.

2.         N. Orihashi and M.Asada, “Fabrication of Millimeter and Submillimeter Oscillators Using Resonant Tunneling Diodes Integrated with Slot Antennas”, 「共鳴トンネルダイオードとスロットアンテナの集積によるミリ波・サブミリ波発振素子作製」, Nat. Conv. Res. of Japan Soc. Appl. Phys., 24p-K-7, Digest I –p.404, Niigata, Sept. 2002.

3.         H. Maeda, R. Yamamoto, K. Takeuchi, Y. Miyamoto and K. Furuya, “Fabrication of Hot Electron Transistor with Buried Metal in i-InP", 「ノンドープInP中の埋込金属周期電極を用いたホットエレクトロントランジスタの作製」, Nat. Conv. Res. of Japan Soc. Appl. Phys., 25a-P9-7, Digest III -p.1202, Niigata, Sept. 2002.

4.         H. Sato, H. Sato, T. Iguchi, and M. Asada, “Protection Effect of W in the Fabrication Process of n-Type Schottky Source/Drain MOSFETs Using ErSi2” 「ErSi2を用いたn型ショットキーソース／ドレインMOSFETのWによる保護効果」, Nat. Conv. Res. of Japan Soc. Appl. Phys., 28p-ZV-14, Digest II –p.965, Kanagawa, Mar. 2003.

5.         N. Orihashi and M. Asada, “Analysis of Terahertz Oscillators Using Resonant Tunneling Diodes Integrated with Slot Antennas” 「共鳴トンネルダイオードとスロットアンテナの集積によるテラヘルツ波発振素子の解析」, Nat. Conv. Res. of Japan Soc. Appl. Phys., 29a-ZE-5, Digest –p.1469, Kanagawa, Mar. 2003.

6.         K. Yokoyama, K. Matsuda, T. Morita, T. Arai, Y. Miyamoto and K. Furuya, “Wet Etching for Self-Aligned 0.1-um-wide Emitter in InP/InGaAs HBT", 「InP/InGaAs系HBT0.1-um幅エミッタの為のウェットエッチングの改善」, Nat. Conv. Res. of Japan Soc. Appl. Phys., 30a-ZF-1, Digest III -p.1500, Kanagawa, Mar. 2003.

 

Light Emitting Devices Using Advanced Structures and Materials

 

Journal of Papers

1.       Y. Niiyama, T. Maruyama, N. Nakamura, and M. Watanabe, "Room Temperature Ultraviolet Photoluminescence of BeZnSe on GaP(001)," Jpn. J. Appl. Phys., vol.41, no.7A, pp.L751-L753, 2002

2.       T. Maruyama, N. Nakamura, and M. Watanabe, "Epitaxial Growth of BeZnSe on CaF2/Si(111) Subtrate," Jpn. J. Appl. Phys., vol.41, no.8A, pp.L876-L877, 2002.

 

International Conferences

 

1.        M. Watanabe, T. Ishikawa, M. Matsuda, T. Kanazawa, and M. Asada, “Room Temperature Negative Differential Resistance of CdF2/CaF2 Resonant Tunneling Diode grown on Si(100) substrate using Nanoarea Local Epitaxy,” 44th 2002 Electronic Materials Conference, Z5, pp.54-55, Santa Barbara, U.S.A., June 26-28, 2002.

2.        M. Watanabe, T. Ishikawa, M. Matsuda, T. Kanazawa, and M. Asada, “Room Temperature Negative Differential Resistance of CdF2/CaF2 Resonant Tunneling Diode grown on Si using Nanoarea Local Epitaxy,” 26th International Conference on the Physics of Semiconductors, P157, pp.219-219, Scotland, UK, July 29- Aug. 2, 2002.

3.        M. Watanabe, T. Ishikawa, M. Matsuda, T. Kanazawa, and M. Asada, “Systematic variation of negative differential resistance characteristics of CdF2/CaF2 Resonant Tunneling Diode on Si(111) grown by Nanoarea Local Epitaxy,” The Second International Workshop on Quantum Nonplanar Nanostructureｓ & Nanoelectronics '02 (QNN '02), Tu4-3, pp.103-106, Tsukuba, Japan, Sept. 9-11, 2002.

 

Meeting Report

 

1.         M. Watanabe, M. Matsuda, H. Fujioka, T. Kanazawa, and M. Asada, “Structure Dependence of Negative Differential Resistance Characteristics of CdF2/CaF2 Resonant Tunneling Diode Grown by Nanoarea Local Epitaxy,” 「ローカルエピタキシー法により形成されたシリコン基板上CdF2/CaF2共鳴トンネルダイオードの微分負性抵抗特性の構造依存性」 電子情報通信学会（電子デバイス研究会）信学技法, ED2002-287，SDM2002-250, pp.33-38, 2003.

 

Domestic Conferences

 

1.                  H. Fujioka, M. Tsutsui, T. Ishikawa, M. Watanabe, and M. Asada, "Fabrication of vertical MOSFET integrated with resonant tunneling diode," 「縦型MOSFETとRTDによる微細素子の作成」The 49th Spring Meeting of The Jpn. Soc. Of Appl. Phys. And Related Societies, 30a-H-8, Digest II –p.893, Kanagawa, March 2002.

2.                  M. Matsuda, T. Ishikawa, T. Kanazawa, M. Watanabe, and M. Asada, "Fabrication and characterization of CdF2/CaF2 resonant tunneling diode on Si(100) substrate," 「Si(100)基板上CdF2/CaF2共鳴トンネルダイオードの作製と評価」The 49th Spring Meeting of The Jpn. Soc. Of Appl. Phys. And Related Societies, 27p-YH-3, Digest III -p.1374, Kanagawa, March 2002.

3.                  Y. Niiyama, T. Maruyama, M. Watanabe, "UV-Photoluminescence of BeMgZnSe-BeZnSe DH structure on GaP(100) substrate," 「GaP(001)基板上BeMgZnSe-BeZnSe DH構造における紫外線PL発光」The 63rd Autumn Meeting of The Jpn. Soc. of Appl. Phys, 26p-YE-7, Digest I –p.272, Niigata, Sept. 2002.

4.                  M. Matsuda, T. Kanazawa, M. Watanabe, and M. Asada, "Quantum-well thickness dependence of NDR characteristics of CdF2/CaF2 resonant tunneling diode," 「CdF2/CaF2共鳴トンネルダイオード微分負性抵抗特性の量子井戸厚依存性」The 63rd Autumn Meeting of The Jpn. Soc. of Appl. Phys, 25p-P9-11, , Digest III –p.1203, Niigata, Sept. 2002.

5.                  T. Yokoyama, Y. Niiyama, and M. Watanabe, "Crystal growth of high Mg-content BeMgZnSe on GaP(001) substrate," 「GaP(001)基板上への高Mg 含有BeMgZnSe の結晶成長」The 50th Spring Meeting of The Jpn. Soc. Of Appl. Phys. And Related Societies, 29p-X-1, Digest I –p.348, Kanagawa, March 2003.

6.                  Y. Niiyama, T. Yokoyama, T. Maruyama, and M. Watanabe, "Content dependence of interband transition process in BeMgZnSe," 「BeMgZnSe におけるバンド間遷移過程の組成比依存性」The 50th Spring Meeting of The Jpn. Soc. Of Appl. Phys. And Related Societies, 29p-X-2, Digest I –p.349, Kanagawa, March 2003.

7.                  M. Matsuda, T. Kanazawa, M. Watanabe, and M. Asada, "Memory effect due to charge and discharge of CdF2/CaF2 resonant tunneling diode," 「CdF2/CaF2 共鳴トンネルダイオードの電荷蓄積による特性変化」The 50th Spring Meeting of The Jpn. Soc. Of Appl. Phys. And Related Societies, 29a-ZE-5, Digest III –p.1469, Kanagawa, March 2003.

8.                  T. Kanazawa, M. Matsuda, M. Watanabe, and M. Asada, "Fabrication and characterization of CdF2/CaF2 resonant tunneling diode on double step Si(100) 2 off substrate," 「ダブルステップ化Si(100) 2° off基板上CdF2/CaF2 共鳴トンネルダイオードの作製と評価」The 50th Spring Meeting of The Jpn. Soc. Of Appl. Phys. And Related Societies, 29a-ZE-3, Digest III –p.1469, Kanagawa, March 2003.

9.                  K. Jinen, M. Watanabe, and M. Asada, "Analysis of CaF2 Based Heterostructure Intersubband Transition Lasers on SOI," 「SOI 基板上弗化物系超ヘテロ構造を用いたサブバンド間遷移レーザの解析」The 50th Spring Meeting of The Jpn. Soc. Of Appl. Phys. And Related Societies, 28p-ZE-4, Digest III –p.1462, Kanagawa, March 2003.

 

 

Processing for Nanometer Structures

 

Domestic Conferences

 

1.       T. Tanaka, K. Tokudome and Y. Miyamoto, "Growth of AlInAs layers and AlInAs/InP HEMT structure by low oxygen contained MOCVD materials",「低酸素MOCVD材料を用いたAlInAsとAlInAs/InP HEMT構造の成長」, Nat. Conv. Rec. of The 63rd Autumn Meeting, Japan Soc. Appl. Phys., 26p-YD-14, Digest I -p.300, Niigata, Sept. 2002.

2.       T. Tanaka, K. Tokudome and Y. Miyamoto, "Growth of AlInAs, InP and AlInAs/InP HEMT structure by low-oxygen-content MOCVD materials",「低酸素MOCVD材料を用いたAlInAs、InPとAlInAs/InP HEMT構造の成長」, Nat. Conv. Rec. of The 50th Spring Meeting, Japan Soc. Appl. Phys., 28p-YA-3, Digest I -p.359, Kanagawa, Mar. 2003.

3.       Y. Miyamoto, S. Arai and K. Furuya, "Nano Foundry Service by Research Center for Quantum Effect Electronics of Tokyo Institute of Technology",「東京工業大学量子効果エレクトロニクス研究センターによる極微細加工・造形支援」, Nat. Conv. Rec. of The 50th Spring Meeting, Japan Soc. Appl. Phys., 29p-ZT-12, Digest 0 -p.120, Kanagawa, Mar. 2003.