LIST OF REPORT

 

Low Dimensional Quantum Structure Lasers

 

Journal Papers

 

1.        K. Ohira, N. Nunoya, H. Yagi, K. Muranushi, A. Onomura, S. Tamura and S. Arai, “Reliable Operation of GaInAsP/InP Distributed Feedback Laser with Wirelike Active Regions,” Jpn. J. Appl. Phys., vol. 42, part 1, no. 2A, pp. 475-476, Feb. 2003.

2.        T. Sano, H. Yagi, K. Muranushi, S. Tamura, T. Maruyama, A. Haque and S. Arai, “Multiple-Quantum-Wire Structures with Good Size Uniformity Fabricated by CH4/H2 Dry Etching and Organometallic Vapor-Phase-Epitaxial Regrowth,” Jpn. J. Appl. Phys., vol. 42, part 1, no. 6A, pp. 3471-3472, Jun. 2003.

3.        H. Yagi, T. Sano, K. Ohira, T. Maruyama, A. Haque and S. Arai, “Room Temperature-Continuous Wave Operation of GaInAsP/InP Multiple-Quantum-Wire Lasers by Dry Etching and Regrowth Method,” Jpn. J. Appl. Phys., vol. 42, part 2, no. 7A, pp. L748-L750, Jul. 2003.

4.        A. Haque, H. Yagi, T. Sano, T. Maruyama and S. Arai, “Electronic Band Structures of   GaInAsP/InP Vertically Stacked Multiple Quantum Wires with Strain-Compensating Barriers,” J. Appl. Phys., vol. 94, no. 3, pp. 2018-2023, Aug. 2003.

5.        K. Ohira, T. Murayama, H. Yagi, S. Tamura and S. Arai, “Distributed Reflector Laser Integrated with Active and Passive Grating Sections Using Lateral Quantum Confinement Effect” Jpn. J. Appl. Phys., vol. 42, part 2, no. 8A, pp. L921-L923, Aug. 2003.

6.        K. Ohira, N. Nunoya and S. Arai, “Stable Single-Mode Operation of Distributed Feedback Lasers With Wirelike Active Regions,” Prepared to submit to IEEE J. Sel. Top. Quantum Electron. vol. 9, no. 5, pp. 1166-1171, Sep/Oct. 2003.

7.        H. Yagi, T. Sano, K. Ohira, D. Plumwongrot, T. Maruyama, A. Haque, S. Tamura and S. Arai, “GaInAsP/InP Partially Strain-Compensated Multiple-Quantum-Wire Lasers Fabricated by Dry Etching and Regrowth Processes,” to be published in Jpn. J. Appl. Phys., 2004.

 

International Conferences

 

1.        H. Yagi, T. Sano, K. Ohira, T. Maruyama, A. Haque and S. Arai, “ RT-CW Operation of GaInAsP/InP Quantum-Wire Lasers Fabricated by Dry Etching and Regrowth Method,” Sixth International Symposium on Contemporary Photonics Technology (CPT 2003), PDP-1, pp. 1 (PD), Tokyo (Japan), Jan. 2003.

2.        K. Ohira, T. Murayama, H. Yagi, S. Tamura and S. Arai, “New Type Distributed Reflector Laser with Passive DBR Section By Using Lateral Confinement Effect,” Sixth International Symposium on Contemporary Photonics Technology (CPT2003), PDP-3, pp. 3(PD), Tokyo (Japan), Jan. 2003.

3.        K. Ohira, T. Murayama, H. Yagi, S. Tamura and S. Arai, “Distributed Reflector Lasers Integrated with Passive Grating Region By Using Lateral Quantum Confinement Effect,” The 15th Indium Phosphide and Related Materials Conf. (IPRM2003), Santa Barbara (USA), WB1.5, pp. 251-254, May 2003.

4.        H. Yagi, T. Sano, K. Ohira, T. Maruyama, A. Haque and S. Arai, “Over 2,000 Hours of RT-CW Operation of GaInAsP/InP Vertically-Stacked Multiple-Quantum-Wire Laser,” The 15th Indium Phosphide and Related Materials Conference (IPRM2003), ThA2.5, pp. 378-379, Santa Barbara, Cal. (USA), May 2003.

5.        A. Haque, H. Yagi, T. Sano, T. Maruyama and S. Arai, “Energy-Band Structures of GaInAsP/InP Vertically Stacked Multiple Quantum-Wire Lasers with Strain-Compensating Barriers,” The 15th Indium Phosphide and Related Materials Conference (IPRM2003), ThP11, pp. 433-436, Santa Barbara, Cal. (USA), May 2003.

6.        A. Haque, T. Maruyama, H. Yagi, T. Sano and S. Arai, “In-Plane Polarization Dependence of Gain in Strained Quantum-Wire Lasers with Strain-Compensating Barriers,” The IEEE/LEOS International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices (NUSOD-03), MA3, pp. 7-8, Tokyo (Japan), Oct. 2003.

7.        T. Maruyama, A. Haque and S. Arai, “Polarization Anisotropy in Strained Quantum-Wire Structures Considering The Strain Relaxation Effect,” The 16th Annual Meeting of The IEEE Lasers & Electro-Optics Society (LEOS2003), MD5, pp. 43-44, Tucson (USA), Oct. 2003.

8.        K. Ohira, T. Murayama, H. Yagi, S. Tamura and S. Arai, “A Novel Distributed Reflector Laser Consisting of Width Modulated Wires in Active DFB and Passive DBR Sections,” The 16th Annual Meeting of The IEEE Lasers & Electro-Optics Society (LEOS2003), Tucson (USA), TuD5, pp. 204-205, Oct. 2003.

9.        H. Yagi, T. Sano, K. Ohira, D. Plumwongrot, T. Maruyama, A. Haque and S. Arai, “Reliable RT-CW Operation of GaInAsP/InP Multiple-Quantum-Wire Lasers Fabricated by Dry Etching and Regrowth Method,” to be presented at Conference on Lasers and Electro Optics/International Quantum Electronics Conference (CLEO/IQEC 2004), CThL, San Francisco, Cal. (USA), May 2004.

10.    H. Yagi, T. Sano, K. Ohira, K. Miura, T. Maruyama, A. Haque and S. Arai, “GaInAsP/InP Multiple-Quantum-Wire Lasers with Narrow (14 nm) Quantum-Wire Structure,” to be presented at 16th Indium Phosphide and Related Materials Conference (IPRM2004), TuA-3-4, Kagoshima (Japan), May/June 2004.

 

Meeting Reports

 

1.        H. Yagi, T. Sano, K. Ohira, T. Maruyama, A. Haque and S. Arai, “RT-CW Operation of GaInAsP/InP Strain-Compensated Multiple Quantum-Wire Lasers Fabricated by Dry-Etching and Regrowth,” 「ドライエッチングと再成長法によるGaInAsP/InP歪補償多層量子細線レーザの室温連続発振」 Technical Report of IEICE, OPE2003-31/LQE2003-25 (2003-07), pp.39-42, Tokyo (Japan), Jul. 2003.

2.        T. Maruyama, A. Haque and S. Arai, “Analysis of Band Structure and Polarization Anisotropy of Strained Quantum-Wire Structure,” 「歪量子細線構造のバンド構造と偏光異方性解析」 Technical Report of IEICE, OPE2003-32/LQE2003-26 (2003-07), pp.43-46, Tokyo (Japan), Jul. 2003.

3.        K. Ohira, T. Murayama, H. Yagi, S. Tamura and S. Arai, “A Novel Distributed Reflector Laser Consisting of Width Modulated Wires in Active DFB and Passive DBR Sections,” The 10th Int. Symposium on Quantum Effect Electronics, pp. 34-37, Tokyo (Japan), Nov. 2002.

4.        S. Arai, H. Yagi, T. Sano, K. Ohira, T. Maruyama, A. Haque, D. Plumwongrot, and S. Tamura, “GaInAsP/InP Long Wavelength Quantum-Wire Lasers,” Pre-Conference of IEEE International Semiconductor Laser Conference 2004 IEICE LQE/OPE Technical Meeting, Kobe (Japan), 20-B, pp.33-36, Dec. 2003.

5.        S. Arai, “Photonics Nanodevice Integration Engineering in Tokyo Tech”, 2004 RCIQE International Seminar for 21st Century COE Program:“Quantum Nanoelectronics for Meme-Media-Based Information Technologies (II)”, Sapporo (Japan), Feb. 2004.

 

Domestic Conferences

 

1.        H. Yagi, T. Sano, K. Ohira, T. Maruyama, A. Haque, S. Tamura and S. Arai,” Room-Temperature Continuous Wave Operation of GaInAsP/InP Strain-Compensated Multiple-Quantum-Wire Lasers,” 「GaInAsP/InP歪補償多層量子細線レーザの室温連続発振」The 50th Spring Meeting, 2003; The Japanese Society of Applied Physics and Related Societies, 28a-YF-4, pp. 1233, Kanagawa, Mar. 2003.

2.        K. Ohira, T. Murayama, H. Yagi, S. Tamura and S. Arai, “Distributed Reflector (DR) Laser with Passive Section Using Lateral Quantum Confinement Effect,” 「横方向量子閉じ込め効果を用いた受動領域を有する分布反射型(DR)レーザ」The 50th Spring Meeting, 2003; The Japanese Society of Applied Physics and Related Societies, 28p-ZQ-14, pp. 1240, Kanagawa, Mar. 2003.

3.        A. Haque, H. Yagi, T. Sano, T. Maruyama and S. Arai,” Band Structure Analysis of Strained Quantum-Wires with Strain-Compensating Barriers Using 8 Band k.p Theory,”「8 ´ 8行列k·p法による歪補償量子細線のバンド構造解析」The 50th Spring Meeting, 2003; The Japanese Society of Applied Physics and Related Societies, 28p-ZE-14, pp. 1466, Kanagawa, Mar. 2003.

4.        T. Maruyama, A. Haque, T. Sano, H. Yagi and S. Arai,” Analysis of Polarization Dependence in Strained Quantum-Wire Structures,”「歪量子細線構造における偏光依存性の解析」The 50th Spring Meeting, 2003; The Japanese Society of Applied Physics and Related Societies, 28p-ZE-15, pp. 1466, Kanagawa, Mar. 2003.

5.        A. Haque, T. Maruyama, H. Yagi, T. Sano and S. Arai, “Polarization Anisotropy of Optical Gain in Strained Quantum-Wire Lasers with Strain-Compensating Barriers,” 「歪補償障壁層を有する歪量子細線レーザの光利得の偏光異方性」 The 64th Autumn Meeting, 2003; The Japan Society of Applied Physics, 30a-ZF-11, pp. 1249, Fukuoka, Aug. 2003.

6.        T. Murayama, K. Ohira, H. Yagi, S. Tamura and S. Arai, “Reflectivity Characteristics of DBR Using Lateral Quantum Confinement Effect,” 「横方向量子閉じ込め効果を用いた高反射率DBRの反射率特性評価」 The 64th Autumn Meeting, 2003; The Japan Society of Applied Physics, 30p-YB-3, pp. 1039, Fukuoka, Aug. 2003.

7.        K. Ohira, T. Murayama, H. Yagi, S. Tamura and S. Arai, “Low-threshold Operation of Distributed reflector (DR) Laser Integrated with Active and Passive Sections,” 「活性領域と受動DBR領域を集積した分布反射型(DR)レーザの低しきい値動作」 The 64th Autumn Meeting, 2003; The Japan Society of Applied Physics, 30p-YB-4, pp. 1039, Fukuoka, Aug. 2003.

8.        H. Yagi, T. Sano, P. Dhanorm, K. Ohira, T. Maruyama, A. Haque and S. Arai, “RT-CW Lifetime of GaInAsP/InP Strain-Compensated Multiple-Quantum-Wire Lasers,” 「GaInAsP/InP 歪補償多層量子細線レーザの室温連続動作寿命」 The 64th Autumn Meeting, 2003; The Japan Society of Applied Physics, 30p-YB-10, pp. 1041, Fukuoka, Aug. 2003.

9.        T. Murayama, K. Ohira, H. Yagi, S. Tamura and S. Arai, “Low-Threshold Operation of Distributed Reflector (DR) Laser Using Wirelike Active Region,” 「細線状活性層を用いた分布反射型(DR)レーザの低しきい値動作」 The 51st Spring Meeting, 2004; The Japanese Society of Applied Physics and Related Societies, 30a-ZZ-2, Tokyo, Mar. 2004.

10.    T. Sano, H. Yagi, K. Ohira, D. Plumwongrot, T. Maruyama, A. Haque and S. Arai, “GaInAsP/InP Strain-Compensated 5-Layered Quantum-Wire Lasers with Narrow Wire (14nm) Structures,” 「狭細線(14nm)構造を有するGaInAsP/InP歪補償5層量子細線レーザ」The 51st Spring Meeting, 2004; The Japanese Society of Applied Physics and Related Societies, 31a-ZZ-4, Tokyo, Mar. 2004.

11.    H. Yagi, T. Sano, D. Plumwongrot, K. Miura, T. Maruyama, A. Haque and S. Arai, “TEM Observation of Regrown Interfaces for GaInAsP/InP Strain-Compensated Multiple-Quantum-Wire Lasers,” 「GaInAsP/InP歪補償多層量子細線レーザの再成長界面のTEM観測」The 51st Spring Meeting, 2004; The Japanese Society of Applied Physics and Related Societies, 31a-ZZ-5, Tokyo, Mar. 2004.

12.    K. Miura, H. Yagi, T. Sano, D. Plumwongrot, T. Maruyama, A. Haque and S. Arai, “GaInAsP/InP Strain-Compensated Multiple-Quantum-Wire Lasers with SiO2/Semiconductor Reflector,” 「SiO2/半導体反射鏡を有するGaInAsP/InP歪補償多層量子細線レーザ」The 51st Spring Meeting, 2004; The Japanese Society of Applied Physics and Related Societies, 31a-ZZ-6, Tokyo, Mar. 2004.

 

New Types of Semiconductor Lasers for Photonic Integration

 

Journal Papers

 

1.        H.-C. Kim, H. Kanjo, S. Tamura and S. Arai, “Narrow-Stripe Distributed Reflector Lasers with First-Order-Vertical Grating and Distributed Bragg Reflector,” IEEE Photon. Technol. Lett., vol. 15, no. 8, pp. 1032-1034, Aug. 2003.

2.        H.-C. Kim, H. Kanjo, T. Hasegawa, S. Tamura and S. Arai, “1.5mm- Wavelength Narrow Stripe Distributed Reflector Lasers for High-Performance Operation,” IEEE J. Sel. Top. Quantum Electron., vol.9, no.5, pp. 1146-1152, Sept./Oct. 2003.

3.        T. Okamoto, N. Nunoya, Y. Onodera, T. Yamazaki, S. Tamura and S. Arai, “Optically Pumped Membrane BH-DFB Lasers for Low-Threshold and Single-Mode Operation,” IEEE J. Select. Topics in Quantum Electron., vol. 9, no. 5, pp. 1361-1366, Sept. /Oct. 2003.

4.        T. Okamoto, T. Yamazaki, S. Sakamoto, S. Tamura and S. Arai, “Low Threshold Membrane BH-DFB Laser Arrays with Precisely Controlled Wavelength over a Wide Range,” to be published in IEEE Photon. Technol. Lett., 2004.

 

 

International Conferences

 

1.      T. Okamoto, Y. Onodera, T. Yamazaki, S. Tamura and S. Arai, “Low Threshold Membrane BH-DFB Laser Arrays for 1490-1565nm Wavelength Range,” 15th Indium Phosphide and Related Materials Conf. (IPRM2003), FA2.5, pp. 558-561, Santa Barbara (USA), May, 2003.

2.      S. Arai, T. Okamoto, Y. Onodera, T. Yamazaki, S. Tamura, “Low Threshold GaInAsP/InP Membrane BH-DFB Lasers,” (Invited), The 8th Optoelectronics and Communications Conference (OECC2003), 14C1-2, pp.315-316, Shanghai (China), Oct. 2003.

3.      T. Okamoto, T. Yamazaki, S. Sakamoto, S. Tamura and S. Arai, “Low Threshold Operation of Optically Pumped Membrane BH-DFB Laser Arrays with a Wide Wavelength Range,” The 16th Annual Meeting of The IEEE Lasers & Electro-Optics Society (LEOS2003), WT 2, pp. 636-637, Tucson (USA), Oct. 2003.

4.      T. Okamoto, T. Yamazaki, S. Sakamoto, S. Tamura and S. Arai, “Short Cavity Membrane BH-DFB Laser with l/4 Phase Shift,” to be presented at 16th Indium Phosphide and Related Materials Conf. (IPRM2004), Kagoshima (Japan), May/June, 2004.

5.      S. Arai, H.-C. Kim and H. Kanjo, “1.5mm-wavelength Single Mode Semiconductor Lasers with Deeply Etched Vertical Grating,” (Invited), to be presented at Conference on Lasers and Electro Optics/International Quantum Electronics Conference (CLEO/IQEC 2004), CWC3, San Francisco, Cal. (USA), May 2004.

 

Meeting Reports

 

1.      T. Okamoto, Y. Onodera, T. Yamazaki, S. Tamura and S. Arai, “A Study of Semiconductor Membrane BH-DFB Laser Arrays,” 「半導体薄膜BH-DFBレーザに関する研究」 Technical Report of IEICE, OPE2003-30 (2003-07), pp.35-38, Tokyo (Japan), July 2003.

 

Domestic Conferences

 

1.        H. Kanjo, H.-C. Kim, S. Tamura, S. Arai, “Facet Phase Control of Vertical-Grating Distributed-Reflector (VG-DR) Laser,” 「垂直回折格子を有する分布反射型(VG-DR)レーザの端面位相制御」 The 50th Spring Meeting, 2003; The Japan Society of Applied Physics and Related Societies, 28p-ZQ-13, pp. 1240, Kanagawa, Mar. 2003.

2.        T. Okamoto, Y. Onodera, T. Yamazaki, S. Tamura and S. Arai, “Wavelength Controllability of Membrane BH-DFB Lasers,” 「半導体薄膜BH-DFBレーザの波長制御性」 The 50th Spring Meeting, 2003; The Japan Society of Applied Physics and Related Societies, 28p-ZQ-16, pp. 1241, Kanagawa, Mar. 2003.

3.        T. Okamoto, Y. Onodera, T. Yamazaki, S. Tamura and S. Arai, “Fabrication of Multiple Wavelength Membrane BH-DFB Laser Array,” 「半導体薄膜BH-DFB多波長レーザアレイの試作」 The 50th Spring Meeting, 2003; The Japan Society of Applied Physics and Related Societies, 28p-ZQ-17, pp. 1241, Kanagawa, Mar. 2003.

4.        H. Kanjo, H.-C. Kim, S. Tamura and S. Arai, “Fabrication of Facet Phase Controlled Vertical-Grating Distributed Reflector (VG-DR) Laser,” 「端面位相制御型垂直回折格子を有する分布反射型(VG-DR)レーザの試作」 The 64th Autumn Meeting, 2003; The Japan Society of Applied Physics and Related Societies, 30p-YB-7, pp.1040, Fukuoka, Aug. 2003.

5.        H.-C. Kim, H. Kanjo, S. Tamura and S. Arai, “1.5mm Vertical Grating Distributed Feedback (VG-DFB) Lasers with Tensile Strained Single Quantum Well,” ｢垂直回折格子と引っ張り歪み量子井戸を有する分布帰還形（VG-DFB）レーザ｣ The 64th Autumn Meeting, 2003: The Japan Society of Applied Physics, 30p-YB-8, pp.1040, Fukuoka, Aug. 2003.

6.        T. Okamoto, T. Yamazaki, S. Tamura and S. Arai, “Room Temperature CW Operation of Phase Shifted Membrane BH-DFB Laser,” 「位相シフト半導体薄膜BH-DFBレーザの室温連続動作」 The 64th Autumn Meeting, 2003; The Japan Society of Applied Physics, 30p-YB-11, pp. 1041, Fukuoka, Aug. 2003.

7.        T. Yamazaki, T. Okamoto, S. Tamura and S. Arai, “Low Threshold Operation of Membrane BH-DFB Laser Arrays,” 「半導体薄膜BH-DFBレーザアレイの低しきい値動作」The 64th Autumn Meeting, 2003; The Japan Society of Applied Physics, 30p-YB-12, pp. 1042, Fukuoka, Aug. 2003.

8.        T. Okamoto, T. Yamazaki, S. Sakamoto, S. Tamura and S. Arai, “Athermal Effect of Polymer Cladded Membrane BH-DFB Laser,” 「誘電体クラッドを用いた半導体薄膜BH-DFBレーザにおけるアサーマル効果の観測」 The 51st Spring Meeting, 2004; The Japan Society of Applied Physics and Related Societies, 30a-ZZ-5, Tokyo, Mar. 2004.

9.        T. Yamazaki, T. Okamoto, S. Sakamoto, S. Tamura and S. Arai, “Multiple Wavelength Membrane BH-DFB Laser Arrays,” 「一括励起半導体薄膜BH-DFB多波長レーザアレイの試作」The 51st Spring Meeting, 2004; The Japan Society of Applied Physics and Related Societies, 30a-ZZ-6, Tokyo, Mar. 2004.

 

Quantum Coherent Electron Devices

 

Journal Papers

 

1.        K. Furuya, Y. Ninomiya, N. Machida, and Y. Miyamoto, "Young’s Double-Slit Interference Observation of Hot Electrons in Semiconductors", Phys. Rev. Lett., Vol. 91, No. 21, pp. 216803-1 – 216803-4, Nov. 2003.

2.        K. Furuya, 「ホットエレクトロンによるヤングの2重スリット干渉実験」, パリティ, Vol. 19, No. 02, pp. 54-56, Feb. 2004.

 

International Conferences

 

1.        K. Furuya , Y. Ninomiya , and Y. Miyamoto, "Young's Double-Slit Interference Experiment of Hot Electron in Semiconductors", The 13th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors, Th11.17, Modena, Italy, July, 2003.

2.        K. Furuya, Y. Ninomiya, N. Machida, and Y. Miyamoto, "Young’s double-slit interference experiment of hot electron in semiconductors," Japan-UK 10+10 Meeting, Toba, Japan, July 18 - 20, 2003.

3.        K. Furuya, Y. Ninomiya, N. Machida, and Y. Miyamoto, "Young's Double-Slit Interference Experiment of Hot Electron in Semiconductors", Sixth International Conference on New Phenomena in Mesoscopic Systems & Fourth International Conference on Surfaces and Interfaces of Mesoscopic Devices, 1.6, Maui, USA, Dec., 2003.

4.        K. Furuya, " GaInAs/InP vertical ballistic-electron devices ---Toward ultra-fast and electron-wave function---," QNANO workshop, Stockholm, Sweden, Dec. 15-16, 2003.

 

Meeting Report

 

1.        N. Machida, H. Kanoh, and K. Furuya, “Numerical Foundation of Hot-Electron Diffraction Experiment Based on Ballistic Electron Emission Microscope,”「弾道電子放出顕微鏡によるホットエレクトロン回折実験の数値解析―量子相反性成立の起源―」, Technical Report of IEICE, ED2003-222, SDM2003-208, pp.5-9, Sapporo, Jan. 2004.

 

 

 

Domestic Conferences

 

1.        N. Machida, K. Furuya, Y. Miyamoto and H. Maeda, “Numerical Simulation of Ballistic Transport Produced by Modulated Hetero-Nano Structure”, 「超ヘテロナノ構造によるバリスティック伝導の数値シミュレーション」, Nat. Conv. Res. of Japan Soc. Appl. Phys., 29a-ZE-10, Digest III -p.1471, Kanagawa, Mar. 2003.

2.        Y. Miyamoto, Y. Ninomiya, N. Machida, and K. Furuya, "Young’s Double-Slit Interference Observation by Hot Electrons in Semiconductors",「半導体中ホットエレクトロンによるダブルスリット干渉観測」, Nat. Conv. Res. of Japan Soc. Appl. Phys., 30p-ZF-4, Digest III -p.1250, Fukuoka, August 2003.

3.        N. Machida, Y. Toriumi, and K. Furuya, "Transmission Analysis of Hot-Electron Double Slit by Mode Expansion Method",「ホットエレクトロンダブルスリット透過のモード展開法による解析」, Nat. Conv. Res. of Japan Soc. Appl. Phys., 30p-ZF-5, Digest III -p.1250, Fukuoka, August 2003.

4.        N. Machida, H. Nagatsuka, and K. Furuya, "Inhomogeneous Broadening of Double-Barrier Resonant Spectrum Explained by Well Width Fluctuations",「井戸幅揺らぎによるダブルバリア共鳴スペクトルの不均一広がり」, Nat. Conv. Res. of Japan Soc. Appl. Phys., 30p-ZF-6, Digest III -p.1251, Fukuoka, August 2003.

5.        H. Kanoh, N. Machida, and K. Furuya, "Transverse Coherence Requirement for Diffraction Observation of Electron Wave in Phase Shift Device",「位相シフタによる電子波回折観測のための横コヒーレンス条件」, Nat. Conv. Res. of Japan Soc. Appl. Phys., 30p-ZF-7, Digest III -p.1251, Fukuoka, August 2003.

6.        H. Kanoh, N. Machida, and K. Furuya, "Validity of Quantum Reciprocity in Hot-Electron Diffraction Experiment Based on Ballistic Electron Emission Microscope", 「BEEMを用いたホットエレクトロン回折実験における量子相反性成立の起源」, Nat. Conv. Res. of Japan Soc. Appl. Phys., 30p-ZE-17, Tokyo, Mar. 2004.

7.        K. Furuya, S. Sato, and N. Machida, "BEEM Transmission Efficiency Taking Diffraction of Emitted Hot Electron into Account", 「放射ホットエレクトロンの回折を考慮したBEEM輸送効率解析」, Nat. Conv. Res. of Japan Soc. Appl. Phys., 31a-ZB-6, Tokyo, Mar. 2004.

 

High-Speed Electron Devices Using Advanced Structures and Materials

 

Journal Papers

 

1.        M.Asada, “Quantum theory of a semiconductor klystron”, Phys. Rev. B, vol.67, No.11, pp.115303 1-8, Mar. 3, 2003.

2.        M. Asada, "Theory of superradiance from photon-assisted tunneling electrons and its application to terahertz device", J. Appl. Phys., vol.94, no.1, 677-685, July 1, 2003.

3.        K. Yokoyama, K. Matuda, T. Nonaka, Y. Miyamoto, and K. Furuya, "Fabrication of GaInAs/InP Heterojunction Bipolar Transistors with a Single Tungsten Wire as Collector Electrode", Jpn. J. Appl. Phys., Vol. 42, No. 12B, pp. L1501-L1503, Dec. 3, 2003.

4.        Y. Miyamoto, R. Yamamoto, H. Maeda, K. Takeuchi, N. Machida, Lars-Erik Wernersson, and K. Furuya, "InP Hot Electron Transistors with a Buried Metal Gate", Jpn. J. Appl. Phys., Vol. 42, No.12, pp. 7221-7226, Dec. 10, 2003.

5.        K. Takeuchi, H. Maeda, R. Nakagawa, Y. Miyamoto, and K. Furuya, "InP Hot Electron Transistors with Emitter Mesa Fabricated between Gate Electrodes for Reduction in Emitter-Gate Gate-Leakage Current ", Jpn. J. Appl. Phys. Vol. 43, No. 2A, pp. L183-L186, Jan. 16, 2004.

6.        K. Sasao, Y. Azuma, N. Kaneda, E. Hase, Y. Miyamoto, and Y. Majima, "Observation of Current Modulation through Self-Assembled Monolayer Molecule in Transistor Structure", Jpn. J. Appl. Phys., Vol. 43, No.3A, Feb. 13, 2004.

7.        M. Asada and M. Yamada, "Theoretical analysis of interaction between electron beam and electro- magnetic wave for unidirectional optical amplifier", to be published in J. Appl. Phys., vol.95, 2004.

8.        M. Asada, "Proposal and Analysis of a Travelling-Wave Amplifier in Terahertz Range Using Two-Dimensional Electron Gas", to be published in Japan. J. Appl. Phys., vol.42, 2004.

9.        M. Asada, "Proposal and Analysis of a Semiconductor Klystron Device Using Two-Dimensional Electron Gas", submitted for publication.

 

International Conference

 

1.        K.Yokoyama, Y.Miyamoto, T.Morita, T.Arai, K. Matsuda and K. Furuya, "Wet Etching for Self-Aligned 0.1-mm-wide Emitter in InP/InGaAs HBT", Topical Workshop on Heterostructure Microelectronics (TWHM'03), W-11, Okinawa, Japan, Jan., 2003.

2.        Y. Miyamoto, K. Sasao, Y. Azuma, N. Kaneda and Y. Majima, "Small Au/SAM/Au Junctions by EB Lithography"(Invited), Quantum Sensing, Evolution and Revolution from Past to Future, Photonic West, 4999-37, San Jose, USA, Jan., 2003.

3.        Y. Miyamoto and Y. Tohmori, "Activities of Indium Phosphide in Japan", (Invited) GaAs Mantech, 11-1, Scottdale, USA, May 2003.

4.        K. Sasao, Y. Azuma, N. Kaneda, E. Hase, Y. Miyamoto and Y. Majima, "Observation of current modulation in SAM-FET fabricated by an air-bridge structure", The 2003 International Conference on Solid State Devices and Materials, P7-5, Tokyo, Sept., 2003.

5.        K. Takeuchi, H. Maeda, R. Nakagawa, Y. Miyamoto, and K. Furuya, "InP hot electron transistors using modulation of gate electrodes", The 2003 International Conference on Solid State Devices and Materials, E-7-3, Tokyo, Sept., 2003.

6.        M. Asada, H. Imai, and H. Kamata, "Proposal of a Semiconductor Klystron Device for THz Range Using Two-Dimensional Electron Gas", to be presented in Int. Conf. Indium Phosphide and Related Materials, May, 2004.

7.        N. Orihashi, S. Hattori, and M. Asada, "Millimeter and Submillimeter Oscillators Using Resonant Tunneling Diode with Stacked-Layer Slot  Antenna", to be presented in Int. Conf. Indium Phosphide and Related Materials, May, 2004.

 

Meeting Report

 

1.      M.Asada, “A Comprehensive Analysis of Traveling-Wave Directional Amplifiers and Its Application to Possibility of Solid-State Terahertz Devices”, 「進行波型一方向性増幅器の一般的解析と固体テラヘルツ素子の可能性」,  IEICE Tech. Rep. of Meeting on Lasers and Quantum Electronics (LQE), No.2, Kanazawa, May 2003.

 

Domestic Conferences

 

1.        H. Sato, H. Sato, T. Iguchi, and M. Asada, “Protection Effect of W in the Fabrication Process of n-Type Schottky Source/Drain MOSFETs Using ErSi2” 「ErSi2を用いたn型ショットキーソース／ドレインMOSFETのWによる保護効果」, Nat. Conv. Rec. of Japan Soc. Appl. Phys., 28p-ZV-14, Digest II –p.965, Kanagawa, Mar. 2003.

2.        N. Orihashi and M. Asada, “Analysis of Terahertz Oscillators Using Resonant Tunneling Diodes Integrated with Slot Antennas” 「共鳴トンネルダイオードとスロットアンテナの集積によるテラヘルツ波発振素子の解析」, Nat. Conv. Rec. of Japan Soc. Appl. Phys., 29a-ZE-5, Digest –p.1469, Kanagawa, Mar. 2003.

3.        K. Yokoyama, K. Matsuda, T. Morita, T. Arai, Y. Miyamoto and K. Furuya, “Wet Etching for Self-Aligned 0.1-um-wide Emitter in InP/InGaAs HBT", 「InP/InGaAs系HBT0.1-um幅エミッタの為のウェットエッチングの改善」, Nat. Conv. Res. of Japan Soc. Appl. Phys., 30a-ZF-1, Digest III -p.1500, Kanagawa, Mar. 2003.

4.        K. Sasao, Y. Azuma, N. Kaneda, E. Hase, Y. Majima, and Y. Miyamoto, "Study of SAM Transistor with an Air-Bridge Structure", 22nd Electronic Materials Symposium (EMS-22), D8, pp. 93-94, Shiga, July 2003.

5.        K. Takeuchi, H. Maeda, R. Nakagawa, Y. Miyamoto, and K. Furuya, "InP Hot Electron Transistors with Emitter Mesa between Gate ",「ゲート電極間にエミッタメサを作製したInP系ホットエレクトロントランジスタ」, Nat. Conv. Res. of Japan Soc. Appl. Phys., 30p-ZF-9, Digest III -p.1251, Fukuoka, August 2003.

6.        M. Asada, “Photon-Assisted Tunneling in Resonant Tunneling Structures and Its Application to Terahertz Devices” 「量子井戸構造のフォトンアシストトンネルとテラヘルツデバイス」, (JJAP Paper Award), Nat. Conv. Rec. of Japan Soc. Appl. Phys., 31p-ZF-1, Fukuoka, Aug. 2003.

7.        N. Kaneda, K. Sasao, Y. Azuma, E. Hase, Y. Miyamoto, and Y. Majima, "Observation of Current Modulation in SAM-FET Fabricated by an Air-Bridge Structure",「エアブリッジ構造を用いたSAM-FETのドレイン電流変調の観測」, Nat. Conv. Res. of Japan Soc. Appl. Phys., 2p-S-5, Digest III -p.1155, Fukuoka, Sept. 2003.

8.        N. Orihashi, S. Hattori, Z. Y. Zhang, and M. Asada, “Millimeter and Submillimeter Oscillators Using Resonant Tunneling Diodes Integrated with Stacked-Layer Slot Antennas”, 「共鳴トンネルダイオードと積層型スロットアンテナによるミリ波・サブミリ波発振素子」, to be presented in Nat. Conv. Rec. of Japan Soc. Appl. Phys., 29p-ZE-15, Tokyo, Mar. 2004.

9.        S. Hattori, N. Orihashi, Z. Y. Zhang, and M. Asada, “Analysis of Oscillation Frequency of Oscillators Using Resonant Tunneling Diodes Integrated with Slot Antennas”, 「共鳴トンネルダイオードとスロットアンテナを用いたTHz波発振素子の発振周波数の解析」, to be presented in Nat. Conv. Rec. of Japan Soc. Appl. Phys., 29p-ZE-16, Tokyo, Mar. 2004.

10.    R. Nakagawa, K. Takeuchi, Y. Yamada, Y. Miyamoto, and K. Furuya, "InP Hot Electron Transistors with Changed Emitter Shape for Controllability of Collector Current by Gate Bias ", 「エミッタ形状を変えてゲートによる制御性を高めたInP系ホットエレクトロントランジスタ」, Nat. Conv. Res. of Japan Soc. Appl. Phys., 30a-S-4, Tokyo, Mar. 2004.

11.    T. Hori, T. Ozono, N. Orihashi, and M. Asada, “Mixing Characteristics of Triple-Barrier Resonant Tunneling Diode in the Millimeter Wavelength Range”, 「三重障壁共鳴トンネルダイオードによるミリ波帯周波数ミキシング特性」, Nat. Conv. Rec. of Japan Soc. Appl. Phys., 30a-ZE-10, Tokyo, Mar. 2004.

 

Light Emitting Devices Using Advanced Structures and Materials

 

Journal of Papers

 

1.      Y. Niiyama, T. Yokoyama, and M. Watanabe, "Effect of Buffer Layer for Epitaxial Growth of High Magnesium Content BeMgZnSe Lattice Matched to GaP (001) Substrate," Jpn. J. Appl. Phys., vol.42, no.6A, pp.L599-L602, 2003.

2.      Y. Niiyama, T. Yokoyama and M. Watanabe, "Epitaxial growth and optical properties for ultraviolet region of BeMgZnSe on GaP(001) substrate," Phys. Stat. Solid. (b), vol. 241, no. 3, pp. 479-482, 2004.

3.      M. Watanabe, T. Kanazawa, K. Jinen, S. Tamura, and M. Asada, "Structural Dependence of the Negative Differential Resistance Characteristics of CdF2/CaF2 Resonant Tunneling Diodes grown on Si(111) using Nanoarea Local Epitaxy," IEEE Trans. Nanotech. to be published.

 

International Conferences

 

1.          M. Watanabe, M. Matsuda, H. Fujioka, T. Kanazawa, and M. Asada, “Structure Dependence of Negative Differential Resistance Characteristics of CdF2/CaF2 Resonant Tunneling Diode grown by Local Epitaxy on Silicon,” 2003 Silicon Nanoelectronics Workshop, 8-07, pp.106-107, Kyoto, Japan, June 8-9, 2003.

2.          M. Watanabe, M. Matsuda, H. Fujioka, T. Kanazawa, and M. Asada, “Memory Effect of CdF2/CaF2 Resonant Tunneling Diode grown on p-type Silicon Substrate,” The 11th International Conference on Modulated Semiconductor Structures -MSS11-, PC47, pp.454-455, Nara, Japan, July 14-18, 2003.

3.          Y. Niiyama, T. Yokoyama, and M. Watanabe, “Crystal Growth of High-Mg-Content BeMgZnSe Lattice Matched to GaP(001) Substrate Using BeZnSe Buffer Layer,” First Asia-Pacific Workshop on Widegap Semiconductors, P118, pp.302-303, Awaji, Hyogo, Japan, March 9-12, 2003.

4.          Y. Niiyama, T. Yokoyama, and M. Watanabe, “Epitaxial growth and optical properties for ultraviolet region of BeMgZnSe on GaP(001) substrate,” 11th International Conference on II-VI compounds, We-1.3, pp.-, Niagara Falls, New York, U.S.A., Sept. 22-26, 2003.

 

Meeting Report

 

1.        M. Watanabe, M. Matsuda, H. Fujioka, T. Kanazawa, and M. Asada, “Structure Dependence of Negative Differential Resistance Characteristics of CdF2/CaF2 Resonant Tunneling Diode Grown by Nanoarea Local Epitaxy,” 「ローカルエピタキシー法により形成されたシリコン基板上CdF2/CaF2共鳴トンネルダイオードの微分負性抵抗特性の構造依存性」 電子情報通信学会（電子デバイス研究会）信学技法, ED2002-287，SDM2002-250, pp.33-38, 2003.

2.        Y. Niiyama, T. Yokoyama, and M. Watanabe, “Epitaxial growth and optical properties of BeMgZnSe for ultraviolet laser diodes,” 第22回電子材料シンポジウム G9, pp.231-234, 2003.

3.        M. Watanabe, T. Kanazawa, K. Jinen, and M. Asada, “Room Temperature Negative Differential Resistance of CdF2/CaF2 Resonant Tunneling Diode Grown on Si(100) Substrate,” 「Si(100)基板上に形成されたCdF2/CaF2超ヘテロ構造による共鳴トンネルダイオードの室温微分負性抵抗特性」 電子情報通信学会（電子デバイス研究会）, pp.25-28, 2004.

 

Domestic Conferences

 

1.        M. Matsuda, T. Kanazawa, M. Watanabe, and M. Asada, "Memory effect due to charge and discharge of CdF2/CaF2 resonant tunneling diode," 「CdF2/CaF2 共鳴トンネルダイオードの電荷蓄積による特性変化」The 50th Spring Meeting of The Jpn. Soc. Of Appl. Phys. And Related Societies, , Kanagawa, March, 2003.

2.        T. Kanazawa, M. Matsuda, M. Watanabe, and M. Asada, "Fabrication and characterization of CdF2/CaF2 resonant tunneling diode on double step Si(100) 2 off substrate," 「ダブルステップ化Si(100) 2° off基板上CdF2/CaF2 共鳴トンネルダイオードの作製と評価」The 50th Spring Meeting of The Jpn. Soc. Of Appl. Phys. And Related Societies, , Kanagawa, March, 2003.

3.        K. Jinen, M. Watanabe, and M. Asada, "Analysis of CaF2 Based Heterostructure Intersubband Transition Lasers on SOI," 「SOI 基板上弗化物系超ヘテロ構造を用いたサブバンド間遷移レーザの解析」The 50th Spring Meeting of The Jpn. Soc. Of Appl. Phys. And Related Societies, , Kanagawa, March, 2003.

4.        T. Yokoyama, Y. Niiyama, and M. Watanabe, "Crystal growth of high Mg-content BeMgZnSe on GaP(001) substrate," 「GaP(001)基板上への高Mg 含有BeMgZnSe の結晶成長」The 50th Spring Meeting of The Jpn. Soc. of Appl. Phys. And Related Societies, Kanagawa, March, 2003.

5.        Y. Niiyama, T. Yokoyama, T. Maruyama, and M. Watanabe, "Content dependence of interband transition process in BeMgZnSe," 「BeMgZnSe におけるバンド間遷移過程の組成比依存性」The 50th Spring Meeting of The Jpn. Soc. Of Appl. Phys. And Related Societies, Kanagawa, March, 2003.

6.        T. Kanazawa, M. Matsuda, M. Watanabe and M. Asada, "Structure dependence of negative differential resistance characteristics of CdF2/CaF2 resonant tunneling diode on Si(100) substrate," 「Si (100)基板上CdF2/CaF2 共鳴トンネルダイオードの微分負性抵抗特性の構造依存性」The 64th Autumn Meeting of The Jpn. Soc. of Appl. Phys, 30p-ZF-14, Fukuoka, Aug., 2003.

7.        T. Yokoyama, Y. Niiyama, M. Watanabe, "Surface morphologies of BeZnSe grown by migration enhanced epitaxy on GaP(001) substrate," 「MEE 法によるGaP(001)基板上BeZnSe 混晶の表面モフォロジ」The 64th Autumn Meeting of The Jpn. Soc. of Appl. Phys, 30p-B-11, Fukuoka, Aug., 2003.

8.        Y. Niiyama, T. Yokoyama, T. Murata, and M. Watanabe, "Temperature dependence of photoluminescence energy of BeMgZnSe," 「BeMgZnSe 混晶のPL 発光エネルギーの温度依存性」The 64th Autumn Meeting of The Jpn. Soc. of Appl. Phys, 30p-B-12, Fukuoka, Aug., 2003.

9.        Y. Niiyama, T. Yokoyama, T. Murata, T. Maruyama, and M. Watanabe, "Theoretical analysis of BeMgZnSe ultraviolet quantum well laser - cladding layer Mg content dependence of threshold current density -," 「BeMgZnSe 系紫外線量子井戸レーザの理論解析 〜クラッド層Mg 含有量依存性〜」The 64th Autumn Meeting of The Jpn. Soc. of Appl. Phys, 30p-B-13, Fukuoka, Aug., 2003.

 

 

 

Processing for Nanometer Structures

 

Journal Papers

 

1.          T. Tanaka, K. Tokudome, and Y. Miyamoto, "Effects of Low-Oxygen-Content Metalorganic Precursors on AlInAs and High Electron Mobility Transistor Structures with the Thick AlInAs Buffer Layer", Jpn. J. Appl. Phys., Vol. 42, No. 8B, pp. L993-L995, July 8, 2003.

 

International Conference

 

1.        T. Tanaka, K. Tokudome, and Y. Miyamoto, "Growth of AlInAs using low-oxygen-content metalorganic precursors and application to HEMT strutures", International Conference on Indium Phosphide and Related Materials,ThB 2.4, Santa Barbara, USA, May 2003.

2.        M. Yoshizawa, S. Moriya, H. Nakano, T. Morita, T. Kitagawa and Y. Miyamoto,  "The Impact of Latent Image Quality on Line Edge Roughness in Electron Beam Lithography", 2003 International Microprocesses and Nanotechnology Conference, 30p-6-15, Tokyo, Japan, Oct. 2003.

 

Domestic Conferences

 

1.      T. Tanaka, K. Tokudome and Y. Miyamoto, "Growth of AlInAs, InP and AlInAs/InP HEMT structure by low-oxygen-content MOCVD materials",「低酸素MOCVD材料を用いたAlInAs、InPとAlInAs/InP HEMT構造の成長」, Nat. Conv. Rec. of The 50th Spring Meeting, Japan Soc. Appl. Phys., 28p-YA-3, Digest I -p.359, Kanagawa, Mar. 2003.

2.      Y. Miyamoto, S. Arai and K. Furuya, "Nano Foundry Service by Research Center for Quantum Effect Electronics of Tokyo Institute of Technology",「東京工業大学量子効果エレクトロニクス研究センターによる極微細加工・造形支援」, Nat. Conv. Rec. of The 50th Spring Meeting, Japan Soc. Appl. Phys., 29p-ZT-12, Digest 0 -p.120, Kanagawa, Mar. 2003.