Semiconductor Lasers & Amplifiers 



Staffs:    S. Arai     K. Komori

Students:  K. Kudo     S.El Yumin  K.C. Shin   A.Nakatani  M.Tamura
           M.Hotta     T.Kimura    H. Kashou   A.Katsube  S.Kurihashi
           A.Serizawa  R.Ubukata   K. Saitoh
A new type of multiple-reflector micro-cavity laser was proposed and analyzed.

A linewidth property of complex coupled DFB laser was analyzed and fabricated.

A GaInAsP/InP semiconductor collimating GRIN lens was proposed and fabricated for optical coupling improvement of SLA and LD to single mode fiber.

Results obtained in this research are as follows.

  1. A new type of multiple-reflector micro-cavity laser having a 30% refractive index difference was proposed, and it was found that it is possible to operate on sub-mA current.

  2. The cavity length dependence of the linewidth property of complex coupled (CC) DFB lasers was analyzed.

  3. A 1.55 micro meter wavelength CC-DFB laser having an anti-phase structure by introducing InP depression layer was fabricated. We showed the ratio of the index-coupling coefficient to the gain-coupling coefficient can be controlled by introducing this InP depression layer.

  4. Saturation characteristics of TTW-SLA using the tensile strained quantum well active layer was demonstrated.

  5. A semiconductor collimating GRIN lens for vertical output beam divergence improvement of SLA and LD was fabricated, and integration with TTW-SLA was demonstrated.