High-Speed Electron Devices Using Nanometer-thick Metal/Insulator Layered Heterostructures



Journal Papers


  1. T. Suemasu, M. Watanabe, J. Suzuki, Y. Kohno, M. Asada, and N. Suzuki, "Metal (CoSi2)/ insulator (CaF2) resonant tunneling diode," Jpn. J. Appl. Phys., vol.33, pp57-65, Jan. 1994.

  2. M.Watanabe, T.Suemasu, and M.Asada, "Metal/insulator heterostructure electron devices," 「金属／絶縁体ヘテロ接合電子デバイス」A monthly publication of the Jpn. Soc. of Appl. Phys., vol.63, no.2, (応用物理 第63巻 第2号 解説記事), pp.124-131, Feb. 1994.

  3. T. Suemasu, Y. Kohno, N. Suzuki, M. Watanabe, and M. Asada, "Different characteristics of metal(CoSi2)/insulator(CaF2) resonant tunneling transistors depending on base quantum-well layer," Trans. IEICE on Electronics, E77-C, pp. 1450-1454, 1994.

  4. T. Suemasu, Y. Kohno, W. Saitoh, N. Suzuki, M. Watanabe, and M. Asada, "Quantum interference of electron wave in metal(CoSi2)/ insulator(CaF2) resonant tunneling hot electron transistor structure," Jpn. J. Appl. Phys., vol.33, pp.L1762-L1765, Dec. 1994.

International Conferences


  1. M. Asada, M. Watanabe, T. Suemasu, and Y. Kohno, "Metal(CoSi2)/ Insulator(CaF2) resonant tunneling diodes and transistors," (Invited) National Symposium of American Vacuum Society, EM-MoA9, Denver, Colorado/USA, Oct., 1994.

Domestic Conferences


  1. T. Suemasu, Y. Kouno, N. Suzuki, W. Saitoh, M. Watanabe and M. Asada, "Fabrication of metal(CoSi2)/insulator(CaF2) resonant tunneling hot electron transistor," 「金属（CoSi2）／絶縁体（CaF2）共鳴トンネルホットエレクトロントランジスタの作製」 Nat. Conv. Rec. of The Japan Soc. of Appl. Phys., 30p-S-14, Kanagawa, Mar. 1994.

  2. Y. Kohno, T. Suemasu, N. Suzuki, M. Watanabe and M. Asada, "Fabrication of metal(CoSi2)/insulator(CaF2) tunneling hot electron resonant transistor using new process," 「新プロセスによる金属（CoSi2）／絶縁体（CaF2）トンネルホットエレクトロン共鳴トランジスタの作製」 Nat. Conv. Rec. of The Japan Soc. of Appl. Phys., 30p-S-15, Kanagawa, Mar. 1994.

  3. N. Suzuki, T. Suemasu, M. Watanabe, M. Asada and Y. Kohno, "Fabrication of metal(CoSi2)/insulator(CaF2) fine-size hot electron transistor(II),"「金属（CoSi2）／絶縁体（CaF2）微細ホットエレクトロントランジスタの作製（II）」 Nat. Conv. Rec. of The Japan Soc. of Appl. Phys., 30p-S-16, Kanagawa, Mar. 1994.

  4. M. Watanabe, H. Iwai, and M. Asada, "Formation of fine metal Co particles on insulator CaF2,"「絶縁体CaF2上への金属Co微粒子の形成」 Nat. Conv. Rec. of The Japan Soc. of Appl. Phys., 30p-S-17, Kanagawa, Mar. 1994.

  5. M. Asada, M. Watanabe, T. Suemasu, N. Suzuki, and Y. Kohno, "Quantum effect devices using metal/insulator heterostructures,"「金属／絶縁体ヘテロ接合を用いた量子効果デバイス」Nat. Conv. Rec. of The Japan Soc. of Appl. Phys., 29p-MA-6, (Symposium), Kanagawa, Mar. 1994.

  6. T. Suemasu, Y. Kohno, W. Saitoh, M. Watanabe, and M. Asada, "Fabrication of metal(CoSi2)/insulator(CaF2) resonant tunneling hot electron transistor (II),"「金属（CoSi2）／絶縁体（CaF2）共鳴トンネルホットエレクトロントランジスタの作製（II）」 Nat. Conv. Rec. of The Japan Soc. of Appl. Phys., 19p-T-9, Nagoya, Sept. 1994.

  7. Y. Kohno, T. Suemasu, W. Saitoh, M. Watanabe, and M. Asada, "Metal(CoSi2)/ Insulator(CaF2) tunneling hot electron resonant transistor,"「金属（CoSi2）／絶縁体（CaF2）トンネルホットエレクトロン共鳴トランジスタ」 Nat. Conv. Rec. of The Japan Soc. of Appl. Phys., 19p-T-10 Nagoya, Sept. 1994.

  8. M. Watanabe, and M. Asada, "Formation of metal Co fine particles on CaF2/Si(111),"「CaF2/Si(111)上への金属Co微粒子の形成」 Nat. Conv. Rec. of The Japan Soc. of Appl. Phys., 20p-MF-14, Nagoya, Sept. 1994.

  9. W. Saitoh, T. Suemasu, Y. Kohno, M. Watanabe, and M. Asada, "Analysis of metal(CoSi2)/insulator(CaF2) resonant tunneling hot electron transistor using equivalent circuit,"「金属（CoSi2）／絶縁体（CaF2）共鳴トンネルホットエレクトロントランジスタの等価回路モデルによる特性評価」Nat. Conv. Rec. of IEICE Japan, C-420, Sendai, Sept. 1994.