Nanometer Structure Fabrication Technology 




Staffs:    K.Furuya   S.Arai       Y.Miyamoto   M.Suhara    S.Tamura
Students:  H.Hongo    T.Takizawa   J.Suzuki     F.Vazquez   D.Sonoda
           C.Nagao    H.Tanaka	   E.Kikuno
Study of nanometer structure fabrication technique is important for the realization of quantum effect devices such as quantum-wire or -box devices and ballistic electron devices based on wave characteristics of electrons.

Results obtained through this year are as follows.

  1. Ultrafine fabrication technique for hot electron interference diffraction devices was proposed using electron beam direct writing lithography and OMVPE. An alignment of 70nm pitch buried GaInAs /InP heterostructure and 70nm pitch electrodes was demonstrated for the first time.

  2. A cross-sectional multiple quantum well structure (GaInAs:3nm/ GaInAsP:8nm) was observed clearly by a scanning tunneling microscope (STM) in air. (NH4)2Sx solution was used for passivating the sample surface. In addition, the relation between the pulse voltage/time and the size of modified area was also investigated.

  3. Anodization process of InP: Anodization process of InP has been investigated with aiming at a novel fabrication technology of quality quantum-wire and quantum-box structures. As the result, a high density (space filling factor of 50%), uniformly shaped (triangle) and sized (40nm) vertical pillar structure was obtained on (111)A oriented InP substrate with a SiO2 mask by adopting an EBX direct patterning followed by the anodization with HCl acid. Very small physical damage by anodization process was established from observing strong PL intensity from 40nm size-ordered triangle pillers.