Nanometer Structure Fabrication Technology



Journal Papers


  1. H. Hongo, Y. Miyamoto, J. Suzuki, M. Funayama, and K. Furuya, "Ultrafine fabrication technique for hot electron interference/diffraction devices," Jpn. J. Appl. Phys., vol.33, pp. 925-928, Jan. 1994.

  2. M. Suhara, Y. Miyamoto, H. Hongo, J. Suzuki and K. Furuya, "GaInAS/InP organometallic vapor phase epitaxy regrowth for ultrafine buried heterostructures with 50 nm pitch toward electron wave devices," J. Cryst. Growth, vol.145, pp.698-701, 1994.

  3. T. Takizawa, S. Arai and M. Nakahara, "Fabrication of vertical and uniform-size porous InP structure by electrochemical anodization," Jpn. J. Appl. Phys., vol.33, no.5A, pp.L643-645, May., 1994.

  4. E. Kikuno, M. Amiotti, T. Takizawa, and S. Arai, "Anisotropic refractive index of porous InP fabricated by anodization of (111)A surface," Jpn. J. Appl. Phys., vol.34, no.1, pp.177-178, Jan., 1995.



International Conferences


  1. Y. Miyamoto, M. Suhara, H. Hongo, J.Suzuki and K. Furuya, "GaInAs/InP OMVPE Regrowth for Ultrafine Buried Heterostructure with 50nm Pitch toward Electron Wave Devices", Conference Digest of 7th International Conference on Metalorganic Vapor Phase Epitaxy ICMOVPE VII, A5-2, pp. 80-81, 1994.



Meeting Reports


  1. H.Hongo, J.Suzuki, M. Suhara, Y.Miyamoto, and K.Furuya, "Nanostructure alignment for hot electron interference/diffraction devices," 「ホットエレクトロンの回折／干渉のためのナノ構造アライメント技術」 電子情報通信学会、電子デバイス研究会、信学技報 ED94-76、Oct. 1994.



Domestic Conferences


  1. J. Suzuki, H. Hongo, M .Suhara, Y. Miyamoto, K. Furuya, "Nanostructure alignment techniqus for hot electron interference/diffraction device," 「ホットエレクトロン干渉/回折素子作製のためのナノ構造のアライメント技術」 Nat. Conv. Rec. of The Japan Soc. of Appl. Phys., 19a-T-11, Nagoya, Sept., 1994.

  2. D. Sonoda, C. Nagao, F. Vasquez, Y. Miyamoto, K. Furuya, and K. Kudo, "Observation of wire buried MQW structure by STM in air," 「大気中STMによる多重量子井戸埋め込み細線構造の観察」 Nat. Conv. Rec. of The Japan Soc. of Appl.Phys., 29p-MF-1, Kanagawa, Mar. 1994.

  3. F. Vasquez, D. Sonoda, Y. Miyamoto, and K. Furuya, "Quantitative analysis of InP surface modifications by STM," 「STMによる硫黄安定化InP表面加工　−パラメータ依存性−」 Nat. Conv. Rec. of The Japan Soc. of Appl. Phys., 29p-MF-4, Kanagawa, Mar. 1994.

  4. D. Sonoda, C. Nagao, F. Vasquez, and K. Furuya, "Contrast inversion of InP/GaInAs on STM observation in air," 「大気中STM観察におけるInP/GaInAs界面コントラストの逆転現象」, Nat. Conv. Rec. of The Japan Soc. of Appl. Phys., 20a-Q-2, Sept., 1994.

  5. T.Takizawa, M.Nakahara, and S.Arai, "Fabrication of 60nm pitch InP piller structures with anodization," 「陽極化成法による60nmピッチInP柱状構造の試作」 Nat. Conv. Rec. of The Japan Soc. of Appl. Phys., 20p-T-11, Nagoya, Sept., 1994.

  6. E.Kikuno, M.Amiotti, T.Takizawa, and S.Arai, "Birefringence of porous structure fabricated on (111)A n-InP substrate with anodization," 「陽極化成法により(111)A面n形InP基板上に形成したポーラス構造の複屈折率特性」 Nat. Conv. Rec. of The Japan Soc. of Appl. Phys., 20p-R-3, Nagoya, Sept., 1994.