Quantum-Film, Quantum-Wire, and Quantum-Box Lasers
Staffs: Y.Suematsu S.Arai M.Asada Y.Miyamoto S.Tamura
Students: K.Kudo H.Hirayama K.C.Shin Y.Nagashima K.Matsunaga
T.Kakinuma M.Tamura M.Hotta S.Kurihashi M.Kumazawa
H.Arima R. Ubukata
Ga1-xInxAs/GaInAsP/InP strained-quantum-film, -wire, and -box lasers
have been studied both theoretically and experimentally. By introducing
tensile-strained quantum-wire (QW) structure into the active layer, room
temperature CW operation of GRIN-SCH single-QW lasers with fairly low
threshold current was achieved. GaInAs/GaInAsP (strained-) quantum-box
(QB) structures were fabricated and obvious 0-dimensional QB size effects
were observed.@Temperature dependences of lasing properties were measured
and compared with those of quantum-film lasers. Carrier injection process in
SCH quantum-film and wire lasers was investigated.
The results obtained in this research are as follows.
- Temperature dependence of lasing properties of quasi-quantum-wire
lasers were measured and compared with those of quantum-film lasers.
- By combining electron beam lithography and ECR dry etching, 20-30nm
wide GaInAs/GaInAsP multi-quantum-wire and -box structures with the
aspect ratio greater than 6 were realized. Moreover, low damage feature
of this fabrication process was confirmed by PL observation.
- An emission energy level shift due to obvious 0-dimensional quantum-
box effect was observed at 4K with GaInAs/GaInAsP single-layer
(strained-) embedded quantum-box structures.
- Lasing action of Ga0.67In0.33As/GaInAsP/InP tensile-strained quantum-box
laser was demonstrated for the first time. The fabricated QB size is 30nm
diameter and 12nm thick with a period of 70nm. The threshold current
density was 7.6KA/cm2 at 77K with pulse current injection.
- Carrier capture time of SCH-QW-lasers was measured by the
spontaneous emission spectra above threshold. Difference between
unstrained, tensile-strained, and compressive-strained lasers was
obtained.