Quantum-Film, Quantum-Wire, and Quantum-Box Lasers

Journal Papers

1. H. Hirayama, K. Matsunaga, M. Asada, and Y. Suematsu, "Lasing action of Ga0.67In0.33As/GaInAsP/InP tensile-strained quantum-box laser," Electron. Lett., vol.30, no.2, pp.142-143, Jan. 1994.

2. H. Hirayama, J. Yoshida, Y. Miyake, and M. Asada, "Carrier capture time and its effect on the efficiency of quantum-well lasers," IEEE J. Quantum Electron., vol.30, no.1, pp.54-62, 1994.

3. H. Hirayama, K. Matsunaga, M. Asada, T. Kakinuma, and M. Kumazawa, "Emission energy shift in GaInAs/GaInAsP strained quantum-box structures due to 0-dimensional quantum-box effect," Japan. J. Appl. Phys., vol.33, no.6A, pp.3571-3577, 1994.

4. H. Hirayama, and M. Asada, "Hole capture rate of GaInAs/InP strained quantum-well lasers," Oprtical and Quantum Electronics (Chapman&Hall), vol.26, no.2, S719-S729, 1994.

5. K. Shimomura, and S. Arai, "Semiconductor waveguide optical switches and modulators," Fiber and Integrated Optics, vol.13, no.1, pp.65-100, Jan. 1994.

6. K. Kudo, Y. Nagashima, M. Tamura, S. Tamura, A. Ubukata, and S. Arai, "Fabrication of GaInAs/GaInAsP/InP multi-quantum-wires and -boxes by substrate-potential-controlled electron cyclotron resonance reactive ion beam etching," Jpn. J. Appl. Phys., vol.33, no.10A, pp. L1383-L1385, Oct. 1994.

7. K.C. Shin, S. Arai, Y. Nagashima, K. Kudo, and S. Tamura, "Temperature dependence of Ga0.66In0.34As/InP tensile-strained quasi-quantum-wire laser fabricated by wet chemical etching and 2-step OMVPE growth," IEEE Photon. Technol. Lett., to be published.

International Conferences

1. S. Arai, Y. Miyamoto, and K. Furuya, "Study of semiconductor intersectional optical switches/modulators," The International Symposium on Ultrafast and Ultra-Parallel Optoelectronics (UUO), Makuhari/Japan, 1-17, July 1994.

2. S. Arai, M. Asada, H. Hirayama, K. Kudo, S. Tamura, and K.C. Shin, "Long wavelength quantum-wire and quantum-box lasers --- Present status and prospects in future," (Invited) The 5th Optoelectronics Conf. (OEC '94), 14D4-1, Makuhari/ Japan, July 1994.

3. M. Tamura, Y. Nagashima, K. Kudo, K. C. Shin, S. Tamura, and S. Arai, "Investigation of surface damage in GaInAs/GaInAsP/InP wire structures by low-energy-reactive-ion assisted radical etching," The 12th Int. Conf. on Solid State Devices and Materials (SSDM '94), Yokohama/Japan, PB-2-7, pp.199-201, Aug. 1994.

4. H. Hirayama, and M. Asada, "Reduction of size fluctuation effect in GaInAs/ GaInAsP quantum-box lasers using tensile-strained active region," Int. Semiconductor Laser Conf., P4, Hawaii/USA, Sep. 1994.

5. S. Arai, "Fabrication and operation properties of GaInAsP/InP quasi-quantum-wire lasers," (Invited) The 2nd Int. Workshop of the Phantoms Network (PHASDOM94), Dublin, 1994.

Domestic Conferences

1. K. C. Shin, K. Kudo, Y. Nagashima, S. Tamura, and S. Arai, "Temperature dependence of Ga0.66In0.34As/InP tensile-strained quasi-quantum-wire laser fabricated by wet chemical etching and 2-step OMVPE growth," Nat. Conv. Rec. of Japan Soc. Appl. Phys., 30p-K-1, Kanagawa, Mar. 1994.

2. A. Nakatani, K. Komori, S. Arai, and A. Katsube, "Lasing Action of GaInAs/InP Quantum-Wire Laser by Selective Growth to Side Trench," Nat. Conv. Rec. of Japan Soc. Appl. Phys., 30p-K-3, Kanagawa, Mar. 1994.

3. H. Hirayama, M. Asada, and M. Kumazawa, "Analysis of threshold current density of GaInAs/GaInAsP/InP tensile-strained-quantum-box lasers," Nat. Conv. Rec. of Japan Soc. Appl. Phys., 30p-K-3, Kanagawa, Mar. 1994.

4. M. Tamura, Y. Nagashima, K. Kudo, S. Tamura, A. Ubukata, S. Arai, "Investigation of surface damage in GaInAs/GaInAsP/InP wire structures by low-energy-reactive-ion assisted radical etching," Nat. Conv. Rec. of Japan Soc. Appl. Phys., 30a-V-10, Kanagawa, Mar. 1994.

5. S. Arai, "Fabrication of GaInAs/InP quantum-wires and -boxes semiconductor laser," May 1994.

6. S. Arai, K. C. Shin, T. Takizawa, M. Tamura, M. Hotta, and M. Nakahara, "Fabiracation of GaInAs(P)/InP ultra-fine structure and its application to quantum-wire optical devices," Oct. 1994.