LIST OF REPORT

Semiconductor Lasers & Amplifiers

Journal of Papers

  1. K.C.Shin, M. Tamura, A. Kasukawa, N. Serizawa, S. Kurihashi, S. Tamura, and S. Arai, "Low Threshold Current Density Operation of GaInAsP/InP Laser with Multiple-Reflector Micro-Cavities," IEEE Photo.Tech.Lett., vol. 7, no. 10, pp. 1119-1121, 1995.
  2. K.C.Shin, M. Tamura, N. Serizawa, S. Kurihasi, S. Tamura, and S. Arai, "Fabrication and Low Threshold current Density CW Operation of GaInAsP/InP Multiple-Reflector Micro-Cavity Laser," to be published in Optical and Quantum Electronics, vol. 27, 1995.

International Conferences

  1. K.C.Shin, M. Tamura, S. Kurihashi, S. Tamura, M. Hotta, S. Arai, and N. Serizawa, "GaInAsP/InP Multiple-Reflector Micro-Cavity Structure Fabricated by EB Lithography and Selective Etching," 7th International Conference of Indium Phosphide and related Compound (IPRM '95), ThP.50, Hokkaido, Apr. 1995.
  2. K.C.Shin, M. Tamura, N. Serizawa, S. Kurihashi, S. Tamura, and S. Arai, "Low Threshold Current Density CW Operation of GaInAsP/InP Multiple-Reflector Micro-Cavity Lasers," 7th International Conference of Indium Phosphide and Related Compound (IPRM'95), FB2-5 (Post Deadline), Hokkaido, Apr. 1995.
  3. S.El Yumin, S. Arai, T. Kimura, H. Kasyou, K. Saito, and A.Ubukata, "Monolithic Integration of GaInAsP/InP Collimating GRIN Lens with Tapered Waveguide Active Region", Seventh International Conference on Indium Phosphide and Related Materials, Sapporo, May 1995.

Domestic Conferences

  1. K.C.Shin, M. Tamura, N. Serizawa, S. Kurihashi, S. Tamura, and S. Arai, "Fabrication of Multiple-Reflector Micro-Cavity Structure by EB Lithography and Selective Etching," 「電子ビーム露光及び選択エッチングによる多重反射極微共振器半導体レーザの作製」 Nat. Conv. Rec. of Japan Soc. Appl. Phys., 30a-ZG-9, Kanagawa, Mar. 1995.
  2. K.C.Shin, M. Tamura, S. Kurihashi, N.Serizawa, S. Tamura, S. Arai, and A. Kasukawa, 「多重反射極微共振器半導体レーザの試作」、第１２回半導体レーザシンポジウム、Yokohama, Mar. 1995.
  3. K.C.Shin, M. Tamura, N. Serizawa, S. Kurihashi, S. Tamura, and S. Arai, "Fabrication and Low Threshold Current Density CW Operation of GaInAsP/InP Multiple-Reflector Micro-Cavity Laser,"「第２回量子効果エレクトロニクス」並びに東京工業大学創造プロジェクト研究・「電子波・光波先端エレクトロニクス研究体」シンポジウム、 July 1995.

Quantum-Film, Quantum-Wire, and Quantum-Box Lasers

Journal Papers

  1. K.C.Shin, S.Arai, Y.Nagashima, K.Kudo and S.Tamura, "Temperature Dependence of Ga0.66In0.34As/InP Tensile-Strained Quasi-Quantum-Wire Laser Fabricated by Wet Chemical Etching and 2-Step OMVPE Growth," IEEE Photon Technol. Lett., 7 [4] pp.345-347, 1995.
  2. M.Tamura, Y.Nagashima, K.Kudo, K.C. Shin, S. Tamura, A. Ubukata and S.Arai, "Surface Damage in GaInAs/GaInAsP/InP Wire Structures Prepared by Substrate-Potential-Controlled Reactive Ion Beam Etching," Jpn.J.Appl.Phys., vol.34,6A, pp.3307-3308, 1995.

International Conferences

  1. S.Arai, M.Tamura, K.C.Shin and S.Tamura, "Fabrication of InP-Based Quantum-Wires and Its Application to Lasers," (Invited)The 7th Int. Conf. on Indium Phosphide and Related Materials (IPRM'95), Sapporo, ThA2.1, May 1995.
  2. S.Arai, M.Asada and K.C.Shin, "GaInAsP/InP Quantum Wire Lasers,"(Invited) The 10th Int. Conf. on Integrated Optics and Optical Fiber Communication (IOOC-95), Hong Kong, FB1-1, May 1995.

Domestic Conferences

  1. M.Tamura, T.Kojima,K.C.Shin, S.Tamura and S.Arai, "Fabrication of GaInAsP Quantum-Wire Structure by ECR Dry-etching and Hydrogen Plasma Cleaning," 「ECRドライエッチングによるGaInAsP/InP量子細線構造作製と水素プラズマクリーニング処理」 Nat. Conv. Res. of Japan Soc. Appl. Phys., 28p-ZB-10, Kanazawa, Aug. 1995.
  2. T.Kojoma, M.Tamura, K.C.Shin, S.Tamura and S.Arai, "Fabrication of GaInAsP/InP Semiconductor Lasers with Compressive-Strained Wire Structure," 「GaInAsP/InP圧縮歪量子細線構造を有する半導体レーザの試作」 Nat. Conv. Res. of Japan Soc. Appl. Phys., 28p-ZA-3, Kanazawa, Oct. 1995.

Quantum Coherent Electron Devices

Journal Papers

  1. H.Matsuura and K.Furuya, "Wavefront spread of hot electrons generated by planer tunnel emitters", Jpn.J.Appl.Phys., vol.34, pp.3589-3592, 1995.
  2. Y.C.Kang, M.Suhara, K.Furuya and R.Koizumi, "Evaluation of hot electron coherent length using well width dependence of the resonance characteristics of resonant tunneling diodes," Jpn.J.Appl.Phys., 34, pp.4417-4419, 1995.
  3. M.Suhara, R. Takemura and K.Furuya, "Possibility of high-temperature evaluation of phase coherent length of hot electrons in triple-barrier resonant tunneling diodes," Jpn.J.Appl.Phys., vol.34, pp.4452-4454, 1995.
  4. Y.Miyamoto, A.G.Dentai, J.M.M.Rios, and S.Chandrasekhar, "GaInAs/InP DHBT incorporating thick extrinsic base and selectively regrown emitter," Electron. Lett., vol. 31, no.17, pp.1510, Aug. 1995

International Conferences

  1. F.Vazquez, K.Furuya and D.Kobayashi, "Proposal of a technique to detect sub-surface hot electrons with a scanning probe microscope," 1995 International Conference on Solid State Devices and Materials, PD-L2 1, Osaka, Aug. 1995.
  2. Y.C.Kang, M.Suhara, K.Furuya and R.Koizumi, "Evaluation of hot electron coherent length using well width dependence of the resonance characteristics of resonant tunneling diodes," International Workshops on Mesoscopic Physics and Electronics, I-19, Tokyo, Mar. 1995.
  3. M.Suhara, R.Takemura and K.Furuya, "Possibility of high-temperature evaluation of phase coherent length of hot electrons in triple-barrier resonant tunneling diodes," International Workshops on Mesoscopic Physics and Electronics, B-18, Tokyo, Mar. 1995.
  4. Y.C.Kang, M.Suhara, K.Furuya、M.Gault and R.Takemura, "Undoped spacer layer effects on the evaluation of the coherent length in GaInAs/InP resonant tunneling diodes," 3rd International Symp. Mesoscopic Structure, Q04 , 322, Hawaii (1995)
  5. N.Kikegawa and K.Furuya, "Mobility enhancement due to the electron wave interference by periodic impurity doping," 3rd International Symp. Mesoscopic Structure, Q07, 331, Hawaii (1995)
  6. F.Vazquez, K.Furuya, D.Kobayashi, and H.Nakaya, "Possibility of hot electron detection with a scanning probe microscope," submitted to the Third International Symposium on New Phenomena in Mesoscopic Structures, R08, 416, Hawaii (1995)

Domestic Conferences

  1. N.Kikegawa and K.Furuya, "Possibility of suppression of impurity scattering in semiconductors by organic doping," 「半導体への不純物組織ドーピングによる電子の散乱抑制」, Nat. Conv. Rec. of IEICE Japan, C-539, pp.132, 1995.
  2. Koizumi, K. Furuya and Y.Miyamoto, "Small-emitter resonant tunneling diodes (RTD) for estimation of electron coherence,” 「ホットエレクトロンのコヒーレンス評価のための微細エミッタ共鳴トンネルダイオード」, Nat. Conv. Rec. of IEICE Japan, C-540, pp.133, 1995.
  3. M.Gault, K.Furuya, N.Machida, Y.Kang, N.Kikegawa and P.Mawby, "Influence of impurities on the estimation of the phase coherent length of electrons in resonant tunneling diodes", Nat. Conv. Rec. of IEICE Japan, C-542, pp.135, 1995.
  4. Suhara, R.Takemura and K.Furuya, "Possibility of high temperature evaluation of phase coherent length using triple barrier resonant tunneling diodes," 「３重障壁共鳴トンネルダイオードによる高温での位相コヒーレンス長評価の可能性」, Nat. Conv. Rec. of IEICE Japan, C-543, pp.136, 1995.
  5. N.Kikegawa and K.Furuya, "Scattering phenomena by periodically placed impurities in semiconductor," 「半導体中の規則配置不純物イオンによる電子の散乱現象」, Nat. Conv. Rec. of IEICE Japan, C-388, pp.80, 1995.
  6. S.Machida, K.Furuya and M.Gault, "Analysis of impurity level assisted tunneling in resonant tunneling diodes," 「共鳴トンネルダイオードにおける不純物準位介在トンネルの理論解析」, Nat. Conv. Rec. of IEICE Japan, C-391, pp.83, 1995.
  7. M.Suhara, C.Nagao, D.Sonoda, Y. Miyamoto and K.Furuya, "AFM observation of interface roughness of GaInAs/InP heterostructure grown by OMVPE," 「OMVPE成長によるGaInAs/InP共鳴トンネルダイオードのヘテロ界面凹凸のAFM観察」, Nat.Conv.Rec.of The Japan Soc. of Appl. Phys. 30aSZY-14, pp.320, Kanagawa, Mar. 1995.
  8. M.Suhara, R.Takemura and K.Furuya, "Possibility of measurement of temperature dependence of phase coherent length using triple barrier resonant tunneling diodes," 「３重障壁共鳴トンネルダイオードを用いた位相コヒーレント長の温度特性評価の可能性」, Nat.Conv.Rec.of The Japan Soc. of Appl. Phys. 30pZK-1, pp. 1280, Kanagawa, Mar. 1995.
  9. Y.C.Kang, M.Suhara, K.Furuya and R.Koizumi, "Evaluation of coherent length of hot electron using well width dependency of resonant tunneling," 「RTDの共鳴特性の井戸幅依存性によるホットエレクトロンのコヒーレンス長評価」, Nat.Conv.Rec.of The Japan Soc. of Appl. Phys. 30pZK-2, pp. 1281, Kanagawa, Mar. 1995.
  10. Y.C.Kang, M.Suhara, M.Gault, R.Takemura and K.Furuya, "Undoped space layer effects on evaluating of coherent length in GaInAs/InP RTD," 「GaInAs/InP RTDによるコヒーレンス長評価に及ぼすアンドープスペーサ層の効果」, Nat.Conv.Rec.of The Japan Soc. of Appl. Phys. 29aZM-7, pp. 1133, Kanazawa, Aug. 1995.
  11. S.Machida, K.Furuya and M.Gault, "Analysis of wave functions with an impurity in RTD-well," 「RTD井戸内不純物存在時の波動関数解析」, Nat.Conv.Rec.of The Japan Soc. of Appl. Phys. 29pZM-2, pp. 1135, Kanazawa, Aug. 1995.

High-Speed Electron Devices Using Nanometer-thick Metal/Insulator Layered Heterostructures

Journal Papers

  1. Saitoh, T. Suemasu, Y. Kohno, M. Watanabe and M. Asada, "Multiple Negative Differential Resistance due to Quantum Interference of Hot Electron Waves in Metal(CoSi2)/Insulator(CaF2) Heterostructures and Influence of Parasitic Elements," Jpn. J. Appl. Phys., vol.34, pp.4481-4482, 1995.
  2. Suemasu, Y. Kohno, W. Saitoh, M. Watanabe and M. Asada, "Theoretical and Measured Characteristics of Metal (CoSi2)/ Insulator (CaF2) Resonant Tunneling Transistors and the Influence of Parasitic Elements," IEEE Trans. Electron Devices, vol.42, no.12, pp.2203-2210, 1995.
  3. Asada, M. Watanabe, T. Suemasu, Y. Kohno and W. Saitoh, "Epitaxial Growth of a Metal(CoSi2)/Insulator(CaF2) Nanometer-Thick Heterostructure and its Application to Quantum-Effect Devices," J. Vac. Sci. Technol., A13(3), pp.623-628, 1995.
  4. Saitoh, T. Suemasu, Y. Kohno, M. Watanabe, and M. Asada, "Metal (CoSi2)/ Insulator(CaF2) Hot Electron Transistor Fabricated by Electron-Beam Lithography on a Si Substrate," Jpn. J. Appl. Phys., vol.34, pp. L1254-1256, 1995.

International Conferences

  1. Suemasu, W. Saitoh, Y. Kohno, M. Watanabe and M. Asada, "Multiple Negative Differential Resistance due to Quantum Interference of Hot Electron Waves in Metal(CoSi2)/ Insulator(CaF2) Heterostructures," International Workshop on Mesoscopic Physics and Electronics, H-2, Tokyo, Mar. 1995.
  2. Suemasu, Y. Kohno, W. Saitoh, K. Mori, M. Watanabe and M. Asada, "Metal(CoSi2)/Insulator(CaF2) Resonant Tunneling and Quantum Interference Transistors Grown on a Si Substrate," 2nd International Workshop on Quantum Functional Devices," S11, Matsue, May 1995.
  3. Suemasu, W. Saitoh, Y. Kohno, K. Mori, M. Watanabe and M. Asada, "Transfer Efficiency of Hot Electrons in a Metal(CoSi2)/Insulator(CaF2) Quantum Interference Transistor," 11th International Conference on the Electronic Properties of Two Dimensional Systems," PA07, Nottingham, UK, Aug. 1995.
  4. Saitoh, T. Suemasu, Y. Kohno, M. Watanabe and M. Asada, "Metal(CoSi2)/ Insulator(CaF2) Hot Electron Transistor Using Electron-Beam Lithography on Si Substrate, "25th European Solid State Device Research Conference, the Netherlands, Sept. 1995.
  5. Mori, W. Saitoh, T. Suemasu, Y. Kohno, M. Watanabe and M. Asada, "Room-Temperature Observation of Multiple Negative Differential Resistance in a Metal(CoSi2)/Insulator(CaF2) Quantum Interference Transistor Structure," 3rd International Symposium on New Phenomena in Mesoscopic Structures, H4, Hawaii, Dec. 1995.

Domestic Conferences

  1. Suemasu, Y. Kohno, N. Saitoh, K. Mori, M. Watanabe and M. Asada, "Reduction of Operating Voltage in Metal(CoSi2)/Insulator(CaF2) RHET," 「金属（CoSi2）／絶縁体（CaF2）共鳴トンネルホットエレクトロントランジスタ（RHET）の低電圧動作化」　Nat. Conv. Rec. of The Japan Soc. of Appl. Phys., 30p-ZK-6, Kanagawa, Mar. 1995.
  2. Saitoh, T. Suemasu, Y. Kohno, Watanabe and M. Asada, "Fabrication and Room-Temperature Operation of Metal(CoSi2)/Insulator(CaF2) Nanometer-Thick Small-Area Hot Electron Transistor," 「金属（CoSi2）／絶縁体（CaF2）微細ホットエレクトロントランジスタの作製と室温動作」 Nat. Conv. Rec. of The Japan Soc. of Appl. Phys., 30p-ZK-7, Kanagawa, Mar. 1995.
  3. Mori, W. Saitoh, T. Suemasu, Y. Kohno, M. Watanabe and M. Asada, "Fabrication and Room Temperature Characteristics of Small Areas Metal(CoSi2)/Insulator(CaF2) QIT,"「極微細金属（CoSi2）／絶縁体（CaF2）量子干渉トランジスタの作製を室温動作」 Nat. Conv. Rec. of The Japan Soc. of Appl. Phys., 28p-ZM-9, Kanazawa, Aug. 1995.
  4. Kohno and M. Asada, "Theoretical analysis of base current characteristics on Metal/Insulator Resonant Tunneling Transistor," 「金属／絶縁体共鳴トンネルトランジスタにおけるベース電流特性の理論解析」 Nat. Conv. Rec. of The Japan Soc. of Appl. Phys., 29p-ZM-5, Kanazawa, Aug. 1995

Light Emitting Devices Using Semiconductor(Metal)/Insulator
Nanostructures

Journal of Papers

  1. Watanabe, F. Iizuka, and M. Asada, "Formation of silicon and cobalt silicide nanoparticles in CaF2," Jpn. J. Appl. Phys, vol.34, no.8B, pp4380-4383, Aug. 1995.

International Conferences

  1. M. Watanabe, F. Iizuka, and M. Asada, "Formation of Silicon and Cobalt Silicide Nanometer Fine Particles (<10nm) in CaF2," International Workshop on Mesoscopic Physics and Electronics, I22, Tokyo, March 1995.
  2. M.Watanabe, F. Iizuka, and M. Asada, "Photoluminescence Spectra of Silicon Nanometer Grains (<10nm) Embedded in CaF2 Thin Films on Si(111)," 1995 Electronic Materials Conference (EMC'95), D3, Virginia, USA, June 1995.
  3. M.Watanabe, T. Suemasu, W. Saitoh, and M. Asada, "Metal(CoSi2)/Insulator(CaF2) Heterostructure Quantum Effect Device," (Invited) IEEE Lasers and Electro-Optics Society 1995 annual meeting, OMP 2.3, San Francisco, USA, Oct. 1995.

Domestic Conferences

  1. M. Watanabe, F. Iizuka, and M. Asada," Photoluminescence spectra of CaF2/Si(111) thin film including Si fine particles,"「Si微粒子を分散したCaF2/Si(111)薄膜のフォトルミネッセンス」 Nat. Conv. Rec. of The Japan Soc. of Appl. Phys., 29a-H-10, Kanagawa, March 1995.
  2. M. Watanabe, M. Asada, and T. Matsunuma, "Nanometer crystalline Si embedded in CaF2/Si(111) thin film," 「CaF2/Si(111)薄膜中に形成されたナノメータSi微結晶」 Nat. Conv. Rec. of The Japan Soc. of Appl. Phys., 26p-ZD-11, Kanazawa, Aug. 1995.

OMVPE Growth and Nanometer Structure
Fabrication Technology

Journal Papers

  1. Hongo, J. Suzuki, M. Suhara, Y.Miyamoto, and K.Furuya, "Nanostructure alignment for hot electron interference/diffraction devices," Jpn. J. Appl. Phys., vol.34, pp. 4436-4438, Aug. 1995.
  2. Takizawa, M. Nakahara, E. Kikuno, S. Arai, "Fabrication of 60 nm-pitch Ordered InP Pillars by EB-lithography and Anodization,"　to be published Special Issue #2 of the J. Electron.Mater., 1996

International Conferences

  1. Hongo, J. Suzuki, M. Suhara, Y. Miyamoto, and K. Furuya, "Nanostructure alignment Technique for hot electron interference/diffraction devices," International Workshop on Mesoscopic Physics and Electronics, H-4, pp. 90-91, 1995
  2. Suhara, C.Nagao, Y. Miyamoto, and K. Furuya, "AFM observation of atomically flat heterointerface of GaInAs/InP grown by OMVPE," ISCS-22, FrB2-3, Cheju Island Aug. 1995.
  3. T.Takizawa,　M.Nakahara,　E.Kikuno,　S.Arai,　"Fabrication of 60 nm-pitch Ordered InP Pillars by EB-lithography and Anodization," Indium Phosphide and Related Materials,ThA2.3, Sapporo, May 1995

Meetg Reports

  1. Suhara, C. Nagao, D. Sonoda, Y. Miyamoto, and K. Furuya, "AFM observation of heterointerface of OMVPE grown GaInAs/InP resonant tunneling diodes," 「AFMによるOMVPE成長GaInAs/InP共鳴トンネルダイオードのヘテロ界面の観察」　電子情報通信学会、電子デバイス研究会、信学技報 ED95-12、Apr. 1995.
  2. Suhara, C. Nagao, H. Honji, Y. Miyamoto, and K. Furuya, "Possibility of roughness control by growth interruptions at GaInAs/InP heterointerface frown by OMVPE," 「OMVPE成長GaInAs/InPヘテロ界面の成長中断による制御の可能性」　電子情報通信学会、電子デバイス研究会、信学技報ED95-114、Oct. 1995 .

Domestic Conferences

  1. Hongo, J.Suzuki, M.Suhara, T. Otake, H. TanakaY. Miyamoto, K. Furuya, "Nanostructure alignment techniques for hot electron interference/diffraction device," 「ホットエレクトロン干渉/回折素子作製のための40 nm 周期 GaInAs/InP 埋め込みダブルスリット」, Nat.Conv.Rec.of The Japan Soc. of Appl.Phys., 30p-ZK-8, Kanagawa, March., 1995.
  2. Suhara, C. Nagao, D. Sonoda, Y. Miyamoto, and K. Furuya, "AFM observation of interface roughness of GaInAs/InP heterostructure grown by OMVPE," 「 OMVPE成長によるGaInAs/InP共鳴トンネルダイオードのヘテロ界面凹凸のAFM観察」, Nat. Conv. Rec. of The Japan Soc. of Appl. Phys., 29a-SZY-14, Mar., 1995.
  3. Suhara, C. Nagao, H. Honji, Y. Miyamoto, and K. Furuya, "AFM observation of heterointerface of GaInAs/InP grown by OMVPE," 「 OMVPE成長によるGaInAs/InPヘテロ界面のAFM観察」, Nat. Conv. Rec. of The Japan Soc. of Appl. Phys., 28p-ZF-1, Aug., 1995.