LIST OF REPORT

Quantum-Film, Quantum-Wire, and Quantum-Box Lasers

Journal Papers

  1. K. C .Shin, M. Tamura, N. Serizawa, S. Kurihashi, S. Tamura and S. Arai, "Fabrication and low threshold current density CW operation of GaInAsP/InP multiple-reflector microcavity laser," Optical and Quantum Electronics, vol. 28, pp.487-493, 1996.

  2. K. C. Shin, N. Serizawa, M. M. Raj and S. Arai, $B!H(BDrive Current and Design Consideration of an Ultra-Low Threshold Current Laser for Optical Parallel Data Communication,$B!I(B to be published on IEEE Lightwave Technology.

$B!!(B

International Conferences

$B!!(B

  1. S. Arai, M. Asada, K. C. Shin and T. Kojima, $B!H(BGaInAsP/InP Low Dimensional Quantum Well Lasers,$B!I(B The 29th Seminar on Science & Technology (Optoelectronics), Tokyo, 7, Feb. 1996.

  2. T. Kojima, M. Tamura, K. C. Shin, S. Tamura and S. Arai, $B!H(BFabrication of GaInAsP/InP Compressively-Strained Single-Layer Quantum-Wire Lasers,$B!I(B 13th Semiconductor Laser Symposium, Yokohama, 24, Mar. 1996.

  3. S. Arai, $B!H(BQuantum-Wires and -Boxes based on GaInAsP/InP and Related Materials for Advanced Semiconductor Lasers,$B!I(B (Invited) The 8th Int. Conf. on Indium Phosphide and Related Materials (IPRM'96), Schw$(D+#(Bbisch Gm$(D+d(Bnd (Germany), PLENARY 2, Digest pp.7-10, Apr. 1996.

  4. T. Kojima, M. Tamura K. C. Shin, S. Tamura and S. Arai, $B!H(BTemperature Dependences of GaInAsP/InP Compressively-Strained Quantum-Wire Lasers -Wires Fabricated by EB Lithography and 2-step OMVPE Growth,$B!I(B The 8th Int. Conf. on Indium Phosphide and Related Materials (IPRM'96), Schw$(D+#(Bbisch Gmünd (Germany), ThA1-5, Digest pp.731-734, Apr. 1996.

  5. S. Arai, $B!H(BGaInAsP/InP Multiple-Microcavity Laser for Low Threshold Operation,$B!I(B (Invited) First Optoelectronics and Communications Conference (OECC$B!G(B96), Makuhari, 16D2-1, Digest pp.70-71, July 1996.

  6. K. C. Shin, N. Serizawa and S. Arai, $B!H(BCalculation of a Drive Current in Ultra-Low Threshold Current Laser,$B!I(B First Optoelectronics and Communications Conference (OECC$B!G(B96), Makuhari, 18P-29, Digest pp.478-479, July 1996.

  7. T. Kojima, M. Tamura, X. Y. Jia, T. Ando, H. Nakaya, S. Tanaka, S. Tamura and S. Arai, $B!H(B1.5mm GaInAsP/InP Compressively-Strained Quantum-Wire Lasers Fabricated by EB-Lithography and Wet-Chemical Etching,$B!I(B Int. Symposium on Formation, Physics and Device Application of Quantum Dot Structures (QDS$B!G(B96), Sapporo, Th2-8, Digest p.190, Nov. 1996.

$B!!(B

$B!!(B

Domestic Conferences

$B!!(B

  1. T. Kojima, M. Tamura, K. C. Shin, S. Tamura and S. Arai, $B!H(BTemperature Dependences of GaInAsP/InP Compressively-Strained Quantum-Wire Lasers,$B!I(B $B!V(BGaInAsP/InP$B05=LODNL;R:Y@~%l!<%6$N29EY0MB8@-!W(B Nat. Conv. Res. of Japan Soc. Appl. Phys., 27a-C-11, Digest?-p.1044, Asaka, Mar. 1996.

  2. S. Kurihashi, K. C. Shin, M. Tamura, N. Serizawa, S. Tamura and S. Arai, $B!H(BFabrication of Multiple Microcavity Laser with narrow groove by ECR Dry-etching,$B!I(B $B!V(BECR$B%I%i%$%(%C%A%s%0$rMQ$$$?699BI}B?=E6KHy6&?64o(B$BH>F3BN%l!<%6$N;n:n!W(B Nat. Conv. Res. of Japan Soc. Appl. Phys., 26p-C-10, Digest?-p.1027, Asaka, Mar. 1996.

  3. S. Kurihashi, K. C. Shin and S. Arai, $B!H(BAnalysis of diffraction loss in Multiple Microcavity Laser structure,$B!I(B $B!V2s@^$r9MN8$7$?B?=E6KHy6&?64oH>F3BN%l!<%6$NM}O@2r@O!W(B Nat. Conv. Rec. of IEICE Japan, C-383, p.383, Tokyo, Mar. 1996.

  4. T. Kojima, M. Tamura, S. Tamura, H. Nakaya, S. Tanaka and S. Arai, $B!H(BTemperature Characteristics of GaInAsP/InP Compressively-Strained Quantum-Wire Lasers,$B!I(B $B!V(BGaInAsP/InP$B05=LODNL;R:Y@~%l!<%6$N29EYFC@-!W(B Nat. Conv. Res. of Japan Soc. Appl. Phys., 8p-KH-11, Digest?-p.952, Fukuoka, Sep. 1996.

  5. N. Serizawa, M. Madhan Raj, S. Peng and S. Arai, $B!H(BCalculation of Characteristics of Multiple Microcavity Laser Diodes by 3-Dimensional Waveguide analysis with Diffraction Loss,$B!I(B $B!V2s@^B;<:$r9MN8$7$?(B3$BF3BN%l!<%6$NFC@-2r@O!W(B Nat. Conv. Res. of Japan Soc. Appl. Phys., 8p-KH-15, Digest?-p.954, Fukuoka, Sep. 1996.

  6. M. Madhan Raj, S. Arai, N. Serizawa and M. Tamura, $B!H(BPhoton Recycling Effect in Semiconductor Lasers using Low Dimensional Structures,$B!I(B $B!V(B$BDcF3BN%l!<%6$K$*$1$k%U%)%H%s%j%5%$%/%j%s%08z2L!W(B Nat. Conv. Rec. of IEICE Japan, C-323, p.323, Kanazawa, Sep. 1996.

$B!!(B

Meeting Reports

$B!!(B

  1. T. Kojima, M. Tamura, X. Y. Jia, S. Tamura, S. Arai, H. Nakaya and S. Tanaka, $B!H(BFabrication of Nano-Structures Using EB-Lithography and Its Application to GaInAsP/InP Quantum-Wire Lasers,$B!I(B $B!V(BEB$BO*8wK!$K$h$k6KHy9=B$$N:n@=$H(BGaInAsP/InP$BNL;R:Y@~%l!<%6%X$N1~MQ!W(B $BEE;R>pJsDL?.3X2q!"%l!<%6!&NL;R%(%l%/%H%m%K%/%9!"?.3X5;Js(BLQE-96-86, pp.55-60, Oct. 1996.

$B!!(B

$B!!(B

Semiconductor Photonic Devices

$B!!(B

Journal Papers

$B!!(B

  1. T. Takizawa, A. Uchino and S. Arai, $B!H(BProposal of Semiconductor Directional-Coupler-Type All-Optical Switch with Tapered-Waveguide Structure,$B!I(B to be published on Jpn. J. Appl. Phys. vol. 36, no. 2 in Feb. 1997.

  2. T. Takizawa, A. Uchino, T. Shimizu, Y. Takeuchi and S. Arai, $B!H(BSwitching Operation of GaInAs/InP Multiple-Quantum-Well Directional-Coupler-Type All-Optical Switch,$B!I(B to be published on. Jpn. J. Appl. Phys., vol. 36, no. 3 in Mar. 1997.

$B!!(B

International Conferences

$B!!(B

  1. T. Takizawa, E. Kikuno, A. Uchino and S. Arai, $B!H(BAnalysis of Directional-Coupler-Type All-Optical Switch with Tapered-Waveguide Structure,$B!I(B First Optoelectronics and Communications Conference (OECC$B!G(B96), 18P-37, pp494-495, Makuhari, July 1996.

$B!!(B

Domestic Conferences

$B!!(B

  1. E. Kikuno, T. Takizawa, A. Uchino, M. Kondo and S. Arai, "Tapered-Waveguide Semiconductor Directional-Coupler Optical Switch by Optical Pumping," $B!V%F!<%Q>uF3GHO)$rM-$9$kH>F3BN8wNe5/J}8~@-7k9g7?8w%9%$%C%A!W(B Nat. Conv. Rec. of IEICE Japan, C-269, Tokyo, Mar. 1996.

  2. T. Takizawa, A. Uchino, T. Shimizu, Y. Takeuchi and S. Arai, "Fabrication of GaInAs/InP Directional-Coupler-Type All-Optical Switch," $B!V(BGaInAs/InP$BD9GHD9BSJ}8~@-7k9g7?A48w%9%$%C%A%s%0AG;R$N;n:n!W(B Nat. Conv. Res. of Japan Soc. Appl. Phys., 7a-KG-5, Fukuoka, Sep. 1996.

$B!!(B

Meeting Reports

$B!!(B

  1. T. Takizawa, A. Uchino and S. Arai, $B!H(BThe All-Optical Directional-Coupler Switch with the Tapered-Shape Structures,$B!I(B $B!V%F!<%Q9=B$$rM-$9$kJ}8~@-7k9g7?8w%9%$%C%A%s%0AG;R!W(B $B%U%)%H%K%C%/%9%$%C%A%s%08&5f2q!"?.3X5;Js(BPS96-14, pp29-34, July 1996.

$B!!(B

$B!!(B

Quantum Coherent Electron Devices

$B!!(B

Journal Papers

$B!!(B

  1. R. Takemura, M. Suhara, Y. Miyamoto, K. Furuya and Y. Nakamura, "Current-voltage characteristics of triple-barrier resonant tunneling diodes including coherent and incoherent tunneling processes", Trans. IEICE, E79-C, no.11, pp.1525-1529, 1996.

  2. Y. C. Kang, M. Suhara, K. Furuya, M. Gault and R. Takemura, "Undoped spacer layer effects on the evaluation on the coherent length in GaInAs/InP resonant tunneling diodes", Physica B, vol.227, pp.210-212, 1996.

  3. N. Machida, K. Furuya, and M. Gault, $B!H(BTheoretical study of resonant tunneling diodes with impurity ions located in wells$B!I(B, Jpn. J. Appl. Phys. vol.35, no.8, pp.4232-4237, 1996.

  4. Y. Miyamoto, J. M. M. Rios, and S. Chandrasekhar , $B!H(BReduction of Base-Collector Capacitance by Undercutting the Collector and Subcollector $B!H(B, IEEE Electron Device Lett., vol. 17, no. 3, pp. 97-99, 1996.

  5. F. Vazquez, K. Furuya, and D. Kobayashi, $B!H(BProposal of a technique to detect subsurface hot electrons with a scanning probe microscope$B!I(B, Jpn. J. Appl. Phys., vol. 35, no. 2B, pp. 1306-1310, Feb. 1996.

  6. F. Vazquez, K. Furuya, and D. Kobayashi, $B!H(BPossibility of hot electron detection with a scanning probe microscope$B!I(B, Physica B, vol. 227, pp. 282-286, 1996.

  7. F. Vazquez, D. Kobayashi, I. Kobayashi, Y. Miyamoto, K. Furuya, T. Maruyama, M. Watanabe, M. Asada, "Detection of hot electron current with scanning hot electron microscopy", Appl. Phys. Lett., vol.68, No.15, pp.2196-2198, Oct. 1996.

  8. F. Vazquez, K. Furuya, and D. Kobayashi, "Detecting subsurface hot electrons with scanning hot electron microscope", J. Appl. Phys., vol.79, No.2, pp.651-655, Jan. 1996.

$B!!(B

International Conferences

$B!!(B

  1. R. Takemura, M. Suhara, T. Oobo, Y. Miyamoto, K. Furuya and Y. Nakamura, "High-temperature estimation of phase coherent length of hot electron using GaInAs/InP triple-barrier resonant tunneling diodes grown by OMVPE", Extended Abstract of the 1996 International Conference on Solid State Device and Materials, pp.758-760, Yokohama, Aug. 1996

  2. H. Hongo, Y. Miyamoto, M. Suhara, and K. Furuya, $B!H(BHot electron interference by 40-nm pitch double slit buried in semiconductor$B!I(B, International Conference Micro- and Nano- Engineering 96, I.67, University of Glasgow, Scotland, Sep. 24, 1996.

  3. F. Vazquez, D. Kobayashi, I. Kobayashi, Y. Miyamoto and K. Furuya, "Scanning probe microscopy applied to a hot electron detection", XI European Congression Microscopy, T3-17, Dublin, Ireland, Aug. 1996.

  4. F. Vazquez, D. Kobayashi, I. Kobayashi, K. Furuya, Y. Miyamoto, T. Maruyama, M. Watanabe and M. Asada, "Experimental evidence of hot electron detection with scanning hot electron microscopy (SHEM)",1996 International Conference on Solid State Device and Materials, IV-7, Yokohama, Japan, Aug. 1996

  5. Y. Miyamoto, "Reduction of base-collector capacitance by undercut of collector and subcollector in GaInAs/InP DHBTs" Advanced Heterostructure Workshop 1996, H-8, Kona, Hawaii, Dec. 1996.

$B!!(B

$B!!(B

Meeting Reports

$B!!(B

  1. Y. Miyamoto, H. Hongo, M. Suhara, K. Furuya, $B!H(BFabrication of semiconductor device for double-slit experiment and hot-electron interference$B!I(B, $B!V(B$BH>F3BN%@%V%k%9%j%C%H%G%P%$%9:n@=$H%[%C%H%(%l%/%H%m%s43>D4QB,!W(B $BEE;R>pJsDL?.3X2q!"EE;R%G%P%$%98&5f2q!"?.3X5;Js(B ED96-107, Apr. 1996.

$B!!(B

Domestic Conferences

$B!!(B

1. R. Takemura, M. Suhara, T. Oobo, Y. Miyamoto, and K. Furuya, $B!H(BEstimation of phase coherent length using current-voltage characteristics of triple-barrier-resonant-tunneling diodes$B!I(B, $B!V(B3$B=E>cJI%H%s%M%k%@%$%*!<%IEEN.EE05FC@-$K$h$k0LAj%3%R!<%l%s%9D9I>2A!W(B, Nat. Conv. Rec. of The Japan Soc. of Appl. Phys., 28pW-8, pp.1265, 1996

2. N. Machida and K. Furuya, $B!H(BAnalysis of effects of impurity ions in RTD-wells on estimating resonance widths of those RTDs$B!I(B, $B!V(BRTD$B$N6&LDI}I>2A$K5Z$\$90f8MFbIT=cJ*%$%*%s$N1F6A2r@O!W(B, Nat. Conv. Rec. of IEICE Japan, C-504, pp.120, 1996

3. N. Machida and K. Furuya, $B!H(BExtraction of resonant spectra in RTDs using de-convolution$B!I(B, $B!V5U%3%s%\%j%e!<%7%g%s$K$h$k(BRTD$B$N6&LD%9%Z%/%H%kCj=P!W(B, Nat. Conv. Rec. of The Japan Soc. of Appl. Phys., 9pZC-4, pp.1134, 1996

4. R. Takemura, T. Oobo, M. Suhara, Y. Miyamoto, and K. Furuya, $B!H(BElectrical properties of resonant tunneling diodes with GaInAs/GaInP heterostructure$B!I(B, $B!V6&LD%H%s%M%k%@%$%*!<%I$NEE5$EAF3FC@-!W(B, Nat. Conv. Rec. of The Japan Soc. of Appl. Phys., 9pZC-5, pp.1134, 1996

5 K. Furuya, $B!VNL;R8z2L$H2sO)%7%9%F%`$r7k$S$D$1$k$K$O(B-$B8&5f$N%9%?%s%9$HEE;RGH%G%P%$%9(B-$B!W(B , Nat. Conv. Rec. of IEICE Japan, SC-9-1, pp.247, 1996

  1. Y. Miyamoto, J. M. M. Rios, and S. Chandrasekhar , $B!H(BReduction of Base-Collector Capacitance by Undercutting the Collector and Subcollector in GaInAs/InP DHBTs$B!H(B , Nat. Conv. Rec. of Japan. Soc. Appl. Phys., 28p-M-13, Saitama, Mar. 1996.

  2. Y. Miyamoto, A. G. Dentai, J. M. M. Rios, and S. Chandrasekhar, $B!H(BGaInAs/InP DHBT with selective regrown emitter for extrinsic base layer$B!I(B, Nat. Conv. Rec. of Japan. Soc. Appl. Phys., 28p-M-9, Saitama, Mar. 1996.

  3. T. Otake, J. Yoshinaga, H. Hongo, Y. Miyamoto, and K. Furuya, $B!H(BDevice performance of fine GaInAs/InP HET by electron beam lithography$B!I(B, $B!V(BEB$BO*8w$K$h$k(BGaInAs/InP$B7O(BHET$B$NHy:Y2=$K$*$1$kAG;RFC@-!W(B, Nat. Conv. Rec. of Japan. Soc. Appl. Phys., 29p-M-7, Saitama, Mar. 1996.

  4. H. Hongo, Y. Miyamoto, M. Suhara, K. Furuya, $B!H(BHot electron interference by 40-nm-pitch double slit buried in semiconductor," $B!V(B$BH>F3BNCf$G$NKd$a9~$_%@%V%k%9%j%C%H$K$h$k%[%C%H%(%l%/%H%m%s$N43>D!W(B, Nat. Conv. Rec. of The Japan Soc. of Appl. Phys., 10p-ZC-5, Fukuoka, Sep., 1996.

$B!!(B

$B!!(B

$B!!(B

High-Speed Electron Devices Using Nanometer-thick Metal/Insulator Layered Heterostructures

$B!!(B

Journal Papers

$B!!(B

1. M. Asada, $B!H(BA Possible Three-Terminal Amplifier Device in the Terahertz Frequency Range Using Photon-Assisted Tunneling,$B!I(B Jpn. J. Appl. Phys., vol. 35, pp.L685-L687, 1996.

2. W. Saitoh, K. Yamazaki, M. Asada and M. Watanabe, $B!H(BProposal and Analysis of Very Short Channel Field Effect Transistor Using Vertical Tunneling with New Heterostructures on Silicon,$B!I(B Jpn. J. Appl. Phys., vol. 35, pp.L1104-L1106, 1996.

3. M. Asada, $B!H(BProposal and Analysis of a Three-Terminal Photon-Assisted Tunneling Device Operating in the Terahertz Frequency Range,$B!I(B IEICE Trans. Electron., E79-C, pp.1537-1542, 1996.

  1. T. Suemasu, W. Saitoh, Y. Kohno, K. Mori, M. Watanabe and M. Asada, $B!H(BTransfer Efficiency of Hot Electron in a Metal(CoSi2)/ Insulator(CaF2) Quantum Interference Transistor,$B!I(B Surface Science, 361/362, pp.209-212, 1996.

  2. K. Mori, W. Saitoh, T. Suemasu, Y. Kohno, M. Watanabe, and M. Asada, $B!H(BRoom-Temperature Observation of Multiple Negative Differential Resistance in a Metal(CoSi2)/ Insulator(CaF2) Quantum Interference Transistor Structure,$B!I(B Physica B, 227$B!$(Bpp.213-215, 1996.

  3. Y. Kohno and M. Asada, $B!H(BTheoretical Base Current in Metal/Insulator Resonant Tunneling Transistors Based on Electron Wave Scattered by Base Port Structure,$B!I(B Physica B, 227, pp.216-219, 1996.

$B!!(B

International Conference

$B!!(B

1. M. Asada, M. Watanabe, W. Saitoh, K. Mori and Y. Kohno, $B!H(BQuantum-Effect Electron Devices Using Metal/Insulator Nanostructures,$B!I(B (Invited) Solid State Devices and Materials, Sympo.IV-1, Kanagawa, Aug. 1996.

$B!!(B

Meeting Report

$B!!(B

1. M. Asada, M. Watanabe, T. Suemasu, K. Kohno, W. Saitoh and K. Mori, $B!H(BQuantum-Effect Electron Devices Using Metal(CoSi2)/Insulator(CaF2)/Si Heterostructures,$B!I(B $B!V6bB0(B(CoSi2)/$B@d1oBN(B(CaF2)/Si$B%X%F%m@\9gNL;R8z2L%G%P%$%9!W(B $BEE;R>pJsDL?.3X2q!"EE;R%G%P%$%98&5f2q!"?.3X5;Js(BED96-2, Apr. 1996.

$B!!(B

Domestic Conferences

$B!!(B

1. W. Saitoh, K. Yamazaki, M. Asada and M. Watanabe, $B!H(BTheoretical Analysis of Metal/Insulator Field Effect Tunneling Transistor,$B!I(B $B!V(B$B6bB0(B/$B@d1oBN%X%F%m9=B$$rMQ$$$?EE3&@)8f7?%H%s%M%k%H%i%s%8%9%?$NM}O@2r@O!W(B Nat. Conv. Rec. of The Japan Soc. of Appl. Phys., 26a-W-6, Saitama, Mar. 1996.

2. T. Suemasu, W. Saitoh, K. Mori Y. Kohno, M. Watanabe and M. Asada, $B!H(BTransfer Efficiency of Hot Electrons from NDR Characteristics of a CoSi2/CaF2 Quantum Interference Transistor,$B!I(B $B!V(BCoSi2/CaF2$BNL;R43>D%H%i%s%8%9%?$NHyJ,Ii@-Dq93FC@-$rMQ$$$?%[%C%H%(%l%/%H%m%sM"Aw8zN(F3=P!W(B, Nat. Conv. Rec. of The Japan Soc. of Appl. Phys., 28p-W-11, Saitama, Mar. 1996.

3. M. Asada, $B!H(BPossibility of Three-Terminal Amplifier Device in The Terahertz Frequency Region Using Photon-Assisted Tunneling,$B!I(B $B!V%U%)%H%s%"%7%9%H%H%s%M%j%s%0$K$h$k%F%i%X%k%DEE<'GHA}I};0C<;RAG;R$N2DG=@-!W(B, Nat. Conv. Rec. of The Japan Soc. of Appl. Phys., 28p-W-19, Saitama, Mar. 1996.

  1. W. Saitoh, K. Mori, H. Sugiura, T. Maruyama, M. Watanabe and M. Asada, $B!H(BRelation of Resistance of Ultra Thin CoSi2 Films on CaF2 and Crystal Quality of CaF2,'' $B!V(BCaF2$B>e6KGvKl(BCoSi2$BEE5$Dq93$N(BCaF2$B7k>=0MB8@-!W(B, Nat. Conv. Rec. of The Japan Soc. of Appl. Phys., 8p-ZE-17, Fukuoka, Sep. 1996.

  2. M. Asada, M. Watanabe, W. Saitoh, K. Mori and Y. Kohno, $B!H(BQuantum-Effect Devices Using Metal/Insulator Heterostructures on Silicon Substrate,$B!I(B $B!V%7%j%3%s4pHD>e$K7A@.$7$?6bB0!?@d1oBNNL;R8z2L%G(B$B%P%$%9!W(B, Nat. Conv. Rec. of IEICE Japan, C-450, Kanazawa, Sep. 1996.

$B!!(B

$B!!(B

Light Emitting Devices Using Semiconductor(Metal)/Insulator

Nanostructures

$B!!(B

$B!!(B

Journal of Papers

$B!!(B

1. M. Watanabe, F. Iizuka, and M. Asada, $B!H(BVisible Light Emission from Nanocrystalline Silicon Embedded in CaF2 Layers on Si(111),$B!I(B IEICE Trans., E79-C, no.11, pp.1562-1567, Nov. 1996.

$B!!(B

International Conferences

$B!!(B

  1. M. Watanabe, T. Matsunuma, T. Maruyama, and M. Asada, $B!H(BVisible Electroluminescence from Silicon Nanoparticles Embedded in CaF2 on Si(111),$B!I(B Second International Symposium on Control of Semiconductor Interfaces, A3-6, Karuizawa, Oct. 1996.

$B!!(B

Domestic Conferences

$B!!(B

  1. T. Matsunuma, T. Maruyama, M. Watanabe, and M. Asada, $B!I(BGrowth condition dependence of electroluminescence from nanometer crystalline Si embedded in CaF2,$B!I(B $B!V(BCaF2$B%J%N%/%j%9%?%k%7%j%3%s$+$i$N(BEL$BH/8w$N@.D9>r7o0MB8@-(B$B!W(B Nat. Conv. Rec. of The Japan Soc. of Appl. Phys., 26aZF5, Saitama, March 1996.

  2. T. Matsunuma, T. Maruyama, M. Watanabe, and M. Asada, $B!I(BElectroluminescence spectra from nano-crystalline Si embedded in CaF2,$B!I(B $B!V(BCaF2$B%J%N%/%j%9%?%k%7%j%3%s$+$i$N(BEL$BH/8w%9%Z%/%H%k(B$B!W(B Nat. Conv. Rec. of The Japan Soc. of Appl. Phys., 8p-V15, Fukuoka, Sep. 1996.

$B!!(B

$B!!(B

Processing for Nanometer Structures

$B!!(B

Journal Papers

$B!!(B

  1. M. Tamura, K. C. Shin, N. Serizawa, and S. Arai, $B!H(BStripe Direction Dependence of Mesa Angle Formed on (100) InP by Selective Etching using HCl Solution,$B!I(B Jpn. J. Appl. Phys, vol.35, pp.2383-2384, 1996.

  2. T. Takizawa, M. Nakahara, E. Kikuno, and S. Arai, $B!H(BFabrication of 60 nm Pitch Ordered InP Pillars by EB-Lithography and Anodization,$B!I(B J. Electron. Mater. vol. 25, pp.657-660, 1996.

  3. H. Hongo, H. Tanaka, Y. Miyamoto, T. Otake, J. Yoshinaga, and K. Furuya, $B!H(BElectrical properties of 100 nm pitch Cr/Au fine electrodes with 40 nm width on GaInAs$B!I(B Jpn. J. Appl. Phys., vol. 35, pp. L964-L967,1996.

  4. H. Hongo, T. Hattori, Y. Miyamoto, K. Furuya, T. Matsunuma, T. Maruyama, M. Watanabe, and M. Asada, $B!H(BSeventy-nm-pitch patterning on CaF2 by e-beam exposure$B!I(B, Jpn. J. Appl. Phys., vol. 35, pp. 6342-6343, 1996

$B!!(B

International Conferences

$B!!(B

  1. M. Suhara C. Nagao, H. Honji, Y. Miyamoto and K. Furuya, "Atomic scale observations of delta-doping structures in GaInAs monolayer steps grown by organometallic vapor phase epitaxy", 8th International Conference on Metal Organic Vapor Phase Epitaxy, PESP.11, Cardiff, June 1996

  2. M. Suhara, C. Nagao, H. Honji, Y. Miyamoto, K. Furuya, and R. Takemura, "Monolayer steps formation in InP and GaInAs by OMVPE and reduction of resonant energy width in GaInAs/InP RTDs", Extended abstract of the 1996 International Conference on Solid State Device and Materials, pp.676-678, Yokohama, Aug. 1996

  3. M. Tamura, T. Kojima, T. Ando, S. Tamura and S. Arai, $B!H(BFabrication of GaInAsP/InP Multiple- Quantum Wire Structures by Cl2-ECR Dry Etching,$B!I(B Int. Symposium on Formation, Physics and Device Application of Quantum Dot Structures (QDS$B!G(B96), Sapporo, Th2-10, Nov. 1996.

  4. H. Hongo, H. Tanaka, Y. Miyamoto, T. Otake, J. Yoshinaga, and K. Furuya, $B!H(BElectrical properties of 100 nm pitch Cr/Au fine electrodes with 40 nm width on GaInAs toward hot electron interference/diffraction device$B!I(B, International Conference Micro- and Nano- Engineering 96, F.1, University of Glasgow, Scotland, Sep. 24, 1996.

$B!!(B

Domestic Conferences

$B!!(B

  1. M. Tamura, T. Kojima, T. Ando, S. Tamura, N. Nunoya and S. Arai, $B!H(BFabrication of GaInAsP/InP Multiple-Quantum-Wire Laser Diodes by Cl2-ECR Dry-etching,$B!I(B $B!V(BECR$B%I%i%$%(%C%A%s%0$K$h$k(BGaInAsP/InP$BNL;R:Y@~9=B$$rM-$9$kEEN.CmF~7?AG;R$N;n:n!W(B Nat. Conv. Res. of Japan Soc. Appl. Phys., 9p-C-7, Fukuoka, Sep. 1996.

  2. X. Y. Jia, T. Kojima, M. Tamura, S. Tamura, and S. Arai, $B!H(BMeasurement Size Fluctuation of Quantum-Wire Structure by Electron-Beam Lithography,$B!I(B $B!V(BEB$BO*8wK!$K$h$j:n@=$7$?NL;R:Y@~9=B$$N%5%$%:MI$i$.!W(B Nat. Conv. Res. of Japan Soc. Appl. Phys., 9a-S-10, Fukuoka, Sep. 1996.

  3. H. Hongo, H. Tanaka, Y. Miyamoto, T. Otake, J. Yoshinaga, and K. Furuya, $B!H(BElectrical properties of 100 nm-pitch electrodes for hot-electron interference/diffraction devices$B!I(B, $B!V%[%C%H%(%l%/%H%m%s$N43>D!&2s@^AG;R$N$?$a$N(B100 nm$B<~4|EE6K$NEE5$FC@-!W(B, Nat. Conv. Rec. of Japan. Soc. Appl. Phys., 29p-W-6, Saitama, Mar. 1996.

  4. T. Hattori, H. Hongo, Y. Miyamoto, K. Furuya, T. Matsunuma, M. Watanabe, and M. Asada, $B!H(BSeventy-nm-pitch CaF2 inorganic resist by electron beam exposure$B!I(B, $B!VEE;R%S!<%`O*8w$K$h$k(BCaF2$BL55!%l%8%9%H(B70 nm$B<~4|%Q%?!<%K%s%0!W(B, Nat. Conv. Rec. of Japan. Soc. Appl. Phys., 26a-SZW-27, Saitama, Mar. 1996.

  5. H. Honji, C. Nagao, M. Suhara, Y. Miyamoto, and K. Furuya $B!H(BSi delta-doping on GaInAs monolayer steps grown by OMVPE$B!I(B, $B!V(BOMVPE?$B@.D9$K$h$k(BGaInAs$BC186;RAX%9%F%C%WI=LL$X$N(BSi?$B%I!<%T%s%0(B$B!W(B, Nat. Conv. Rec. of The Japan Soc. of Appl. Phys., 27pZC-12, pp.255, 1996

  6. M. Suhara, C. Nagao, H. Honji, Y. Miyamoto, and K. Furuya, $B!H(BOMVPE step flow growth in InP/GaInAs and reduction of resonant energy width in RTDs$B!I(B, $B!V(BInP/GaInAs OMVPE$B%9%F%C%W%U%m!<@.D9$H$=$l$K$h$k(BRTD$B6&LD%(%M%k%.!, Nat. Conv. Rec. of The Japan Soc. of Appl. Phys., 8aZH-4, pp.220,1996