Publication List

  1. Qunatum-Film, Quantum-Wire, and Quantum-Box Lasers

  2. Semiconductor Photonic Devices

  3. Quantum Coherent Electron Devices

  4. High-Speed Electron Devices Using Nanometer-thick Metal/Insulator Layered Heterostructures

  5. Light Emitting Devices Using Semiconductor(Metal)/Insulator Nanostructures

  6. Processing for Nanometer Structures

[Contents]

Quantum-Film, Quantum-Wire, and Quantum-Box Lasers

Journal Papers

  1. K. C. Shin, N. Serizawa, M. M. Raj and S. Arai, "Drive Current and Design Consideration of an Ultra-Low Threshold Current Laser for Optical Parallel Data Communication," IEEE Lightwave Technol., vol.15, no.5, pp.845-851, 1997.

  2. M. M. Raj, S. Arai and M. Tamura, "Photon recycling effect in semiconductor lasers using low dimensional structures," Jpn. J. Appl. Phys., vol.36, no.10A, pp.6368-6375, 1997.

  3. T. Kojima, S. Arai and G. U. Bacher, "Anisotropic polarization properties of photoluminescence from GaInAsP/InP quantum-wire structures fabricated by two-step organometallic vapor phase epitaxy growth," Jpn. J. Appl. Phys., vol.37, no.1A/B, pp.L46-L49, 1998.

International Conferences

  1. S. Arai, "GaInAsP/InP long-wavelength quantum-wire lasers by EB-lithography and OMVPE regrowth," The 4th Phantoms Strategic Domain Meetings (PHASDOM'97), Aachen (Germany), D2.8, Mar. 1997.

  2. T. Kojima, X. Y. Jia, H. Nakaya, S. Tanaka, S. Tamura, S. Arai and G.Bacher, "Lasing properties of GaInAsP/InP quantum-wire lasers," 14th Semiconductor Laser Symposium, Yokohama, 18, Mar. 1997.

  3. T. Kojima, M. Tamura, X. Y. Jia, H. Nakaya, T. Ando, S. Tanaka, S. Tamura, S. Arai and G. U. Bacher, "Anisotropic polarization properties of GaInAsP/InP compressively-strained quantum-wire structure," The 9th Int. Conf. on Indium Phosphide and Related Materials (IPRM'97), Hyannis (USA), MD7, pp.226-229, May 1997.

  4. S. Arai, "Fabrication and characterization of GaInAsP/InP long-wavelength quantum-wire lasers," The 10th IEEE Lasers and Electro-Optics Society Meeting (LEOS'97), San Francisco (USA), ThY1, pp.492-493, Nov. 1997.

  5. S. Arai, "Nanometer scale semiconductor photonics - Low-dimensional quantum structures towards high performance lasers -," Int'l Topical Workshop on Contemporary Photonic Technologies (CPT'98), Tokyo, Wa-04, pp.99-102, Jan. 1998.

Domestic Conferences

  1. T. Kojima, X. Y. Jia, H. Nakaya, S. Tanaka, S. Tamura and S. Arai, "Anisotropic Polarization Properties of PL from GaInAsP/InP Quantum-Wire Structure," 「GaInAsP/InP量子細線構造のPL偏光特性」 Nat. Conv. Res. of Japan Soc. Appl. Phys., 29p-T-15, Digest 0-p.1337, Chiba, Mar. 1997.

  2. S. Arai and T. Kojima, "GaInAsP/InP Long-Wavelength Quantum-Wire Semiconductor Lasers,"「長波長帯量子細線半導体レーザ」 Nat. Conv. Rec. of IEICE Japan, C-4-20, p.266, Tokyo, Sept. 1997.

  3. H. Nakaya, T. Kojima, S. Tanaka, S. Tamura and S. Arai, "Fabrication of 50nm-period of GaInAsP/InP Compressively-strained Quantum-Wire Lasers," 「周期50nm GaInAsP/InP圧縮歪量子細線レーザの作製」 Nat. Conv. Res. of Japan Soc. Appl. Phys., 2a-ZC-5, DigestⅢ-p.1073, Akita, Oct. 1997.

  4. T. Kojima, H. Nakaya, S. Tanaka, S. Tamura and S. Arai, "Cavity Length Dependence of Threshold Current of GaInAsP/InP Quantum-Wire Lasers," 「GaInAsP/InP量子細線レーザの発振しきい値電流の共振器長依存性」 Nat. Conv. Res. of Japan Soc. Appl. Phys., 2a-ZC-6, DigestⅢ-p.1073, Akita, Oct. 1997.

  5. S. Tanaka, T. Kojima, H. Nakaya, S. Tamura and S. Arai, "Regrowth Temperature Dependence of GaInAsP/InP Single-Layer Quantum-Well Lasers," 「GaInAsP/InP単層量子井戸レーザの埋め込み成長温度依存性」 Nat. Conv. Res. of Japan Soc. Appl. Phys., (29p-ZH-2), Tokyo, Mar. 1998.

  6. T. Kojima, H. Nakaya, S. Tanaka, S. Tamura and S. Arai, "Temperature Dependence of Threshold Current Density of GaInAsP/InP Quantum-Wire Lasers," 「GaInAsP/InP量子細線レーザの発振しきい値電流の温度依存性」 Nat. Conv. Res. of Japan Soc. Appl. Phys., (29p-ZH-3), Tokyo, Mar. 1998.

  7. M. Tamura, T. Ando, N. Nunoya, S. Tamura and S. Arai, "Estimation Sidewall Recombination Velocity of GaInAsP/InP Multiple Wire Laser from Its Spontaneous Emission Efficiency," 「GaInAsP/InP細線レーザの自然放出光効率からの表面再結合速度の見積もり」 Nat. conv. Res. of Japan Soc. Appl. Phys.,(29p-ZH-4), Tokyo, Mar. 1998.

  8. H. Nakaya, T. Kojima, S. Tanaka, H.Yasumoto, S. Tamura and S. Arai, "Gain spectrum measurement of GaInAsP/InP Compressively-Strained Quantum-Wire Lasers," 「GaInAsP/InP圧縮歪量子細線レーザの光利得スペクトルの測定」 Nat. Conv. Res. of Japan Soc. Appl. Phys., (29p-ZH-5), Tokyo, Mar. 1998.

  9. K. Numata, M. Madhan Raj, S. Toyoshima, H. Nakaya, and S. Arai, "Fabrication of Multiple Microcavity Laser having Air/Semiconductor-Bragg Reflective Mirrors," 「空気/半導体-ブラッグ反射鏡を有する多重極微共振器半導体レーザの試作」 Nat. Conv. Res. of Japan Soc. Appl. Phys., (30a-ZH-8), Tokyo, Mar. 1998.

  10. M. Madhan Raj, K. Numata, S. Toyoshima, S. Peng, Y. Miyamoto, and S. Arai, "Application of Benzocyclobutene (BCB) Polymer to Active Opto-electronics Devices," 「ベンゾシクロブテン(BCB)の動的光デバイスへの応用」 Nat. Conv. Res. of Japan Soc. Appl. Phys., (30a-ZH-9), Tokyo, Mar. 1998.

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Semiconductor Photonic Devices

Journal Papers

  1. T. Takizawa, A. Uchino and S. Arai, "Proposal of Semiconductor Directional-Coupler-Type All-Optical Switch with Tapered-Waveguide Structure," Jpn. J. Appl. Phys. Vol. 36, No. 2 in Feb. 1997.

  2. T. Takizawa, A. Uchino, T. Shimizu, Y. Takeuchi and S. Arai, "Switching Operation of GaInAs/InP Multiple-Quantum-Well Directional-Coupler-Type All-Optical Switch," Jpn. J. Appl. Phys., Vol. 36, No. 3 in Mar. 1997.

Domestic Conferences

  1. T. Takizawa and S. Arai, "Analysis of Directional-Coupler-Type All-Optical Switch with Low Dimensional Quantum-Well Structures," 「低次元量子井戸構造を導入した長波長帯方向性結合型全光スイッチの動作解析」 Nat. Conv. Res. of Japan Soc. Appl. Phys., 28p-NE-6, Chiba, March 1997

  2. T. Shimizu, S. Yamazaki, and S. Arai, "Waveguide Width Dependence of Crosstalk for MQW Directional-Coupler type All-Optical Switch," 「MQW方向性結合型全光スイッチにおけるクロストークの導波路幅依存性」 Nat. Conv. Res. of Japan Soc. Appl. Phys., 29a-SZL-3, Tokyo, March 1998

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Quantum Coherent Electron Devices

Journal Papers

  1. H.Hongo, Y.Miyamoto, M.Suhara and K.Furuya, "A 40nm pitch double slit experiment of hot electrons in a semiconductor under a magnetic field," Appl.Phys.Lett., vol.70, no.1, pp.93-95, 1997.

  2. J.M.M.Rios, L.M.Lurardi, S.Chandrasekhar and Y.Miyamoto, "A self-consistent method for complete small- signal parameter extraction of InP-based heterojunction bipolar transistors(HBT's)," IEEE Trans, Microwave Theory Tech., vol.45, no.1, pp. 39-45, 1997.

  3. H.Hongo, Y.Miyamoto, M.Suhara and K.Furuya, "Hot electron interference by 40nm-pitch double slit buried in semiconductor," Microelectronic Engineering, vol.35, pp.337-340, 1997.

  4. R.Takemura, M.Suhara, T.Oobo, Y.Miyamoto and K.Furuya, "Characterization of GaInAs/InP triple-barrier resonant tunneling diodes grown by organo-metallic vapor phase epitaxy for high-temperature estimation of phase coherent length of electrons," Jpn.J.Appl.Phys., vol.36, no.3B, pp.1846-1848, 1997.

  5. D. Kobayashi, K. Furuya, N. Kikegawa and F. Vazuquez, "Estimation of Lateral Resolution in Scanning Hot Electron Microscopy," Jpn. J. Appl. Phys. vol.36, Pt. 1 no.7A, pp.4472-44473, 1997.

  6. T.Oobo, R.Takemura, M.Suhara, Y.Miyamoto and K.Furuya, "High Peak to Valley Current Ratio GaInAs/GaInP Resonant Tunneling Diodes," Jpn.J.Appl.Phys., vol.36, no.8, pp.5079-5080, 1997.

  7. H.Hongo, Y.Miyamoto, M.Gault and K.Furuya, "Influence of a finite energy width in electron distribution to an experiment of hot electron double-slit interference - a design of the emitter structure," J. Appl. Phys.. vol.82, no.8, pp.3846-3852, 1997.

International Conferences

  1. Y.Miyamoto, A.Yamaguchi, K.Oshima, W.Saitoh and M.Asada, "MIS emitter with epitaxial CaF2 layer as insulator," 10th International Vacuum Microelectronics Conference, Kyongju, Korea, Aug. 1997.

  2. Y.Miyamoto, J.Yoshinaga, H.Toda, T.Arai, H.Hongo, T.Hattori, A.Kokubo and K.Furuya, "Sub-micron GaInAs/InP Hot Electron Transistors by EBL process and size dependence of current gain," International workshop on Nano-Physics and Electronics, Tokyo, Japan, Sept. 1997.

Meeting Report

  1. T.Oobo, M.Suhara, Y.Miyamoto and K.Furuya, "Fabrication and characterization of GaInAs/InP resonant tunneling diodes toward the estimation of phase coherent length of electron wave," 「電子波位相コヒーレンス評価のためのGaInAs/InP共鳴トンネルダイオード作製と特性評価」 Technical Report of IEICE, ED97-122, pp.23-29, 1997.

Domestic Conferences

  1. T.Oobo, R.Takemura, K.Sato, M.Suhara, Y.Miyamoto and K.Furuya, "Spacer layer effects on resonant width of GaInAs/InP resonant tunneling diodes," 「GaInAs/InP共鳴トンネルダイオードの共鳴準位幅に対するスペーサーの影響」 Nat. Conv. Res. of Japan Soc. Appl. Phys., 29aZA-4, Chiba, Mar. 1997.

  2. Kikegawa, F. Vazquez and K. Furuya, "Theoretical analysis to observe hot electrons in semiconductors with Scanning Hot Electron Microscopy using low work function metals," 「低仕事関数金属を用いたSHEMによる半導体中ホットエレクトロン観測のための理論的検討」 Nat. Conv. Rec. of Japan Soc. Appl. Phys., 29aPB-18, Chiba, Mar. 1997.

  3. D. Kobayashi, K. Furuya N. Kikegawa and F. Vazquez, "Spatial Resolution of Scanning Hot Electron Microscope," 「走査型ホットエレクトロン顕微鏡の空間分解能」 Nat. Conv. Rec. of Japan Soc. Appl. Phys., 29aPB-17, Chiba, Mar. 1997

  4. K.Furuya, "Electronwave diffraction/interference devices," 「電子波回折/干渉デバイス」 Nat. Conv. Rec. of IEICE, SC-8-6 (1997).

  5. J.Yoshinaga, H.Toda, T.Arai, Y.Miyamoto, K.Furuya, T.Hattori, A.Kokubo, "Fabrication of fine GaInAs/InP HETs by electron beam lithography," 「EB(電子ビーム)露光によるGaInAs/InP系ホットエレクトロントランジスタ(HET)の微細化」 Nat. Conv. Rec. of IEICE, C-10-39 (1997).

  6. T.Oobo, M.Suhara, K.Furuya, and K.Kyo, "Estimation of temperature dependence of resonant voltage width in GaInAs/InP triple-barrier RTDs," 「GaInAs/InP 3重障壁共鳴トンネルダイオードを用いた共鳴電圧幅の温度依存性評価」 Nat. Conv. Rec. of Japan Soc. Appl. Phys., 2aZF-8, Akita Sep.1997

  7. T.Oobo, M.Suhara and K.Furuya, "Theoretical model of the effects of impurity ions in the electrodes on resonant level width in RTDs," 「共鳴トンネルダイオードの共鳴準位幅に及ぼす電極不純物の影響の理論モデル」 Nat. Conv. Rec. of Japan Soc. Appl. Phys., 2aZF-9, Akita Sep.1997

  8. N.Machida and K.Furuya, "Analysis of phase breaking effect on TBRTDs," 「3重障壁共鳴トンネルダイオード(TBRTD)における位相破壊の影響解析」 Nat. Conv. Rec. of Japan Soc. Appl. Phys., 2aZF-10, Akita Sep.1997

  9. Y.Miyamoto, A.Yamaguchi, K.Oshima, W.Saitoh and M.Asada, "MIS emitter with epitaxial CaF2 layer as insulator,”「CaF2エピタキシャル層を絶縁層としたMISエミッタ」 Nat. Conv. Rec. of Japan Soc. Appl. Phys., 2a-E-3, Akita Sep.1997

  10. K. Furuya, F. Vazquez N. Kikegawa, N.Matsumoto and Y. Ikeda, "Suppression of the effect of the residual series resistance for hot electron observation with SHEM," 「SHEMによるホットエレクトロン観測のために残留抵抗問題の解消」 Nat. Conv. Rec. of Japan Soc. Appl. Phys., 3pZT-2, Akita Sep.1997

  11. Kikegawa, F. Vazquez, K. Furuya N.Matsumoto and Y.Ikeda, "The condition of vibration noise to observe hot electrons using Scanning Tunneling Microscope," 「STMによるホットエレクトロン観測のためのノイズ振動条件」 Nat. Conv. Rec. of Japan Soc. Appl. Phys., 4pE-10, Akita Sep.1997

[Activities] [Top] [Contents]

High-Speed Electron Devices Using Nanometer-thick Metal/Insulator Layered Heterostructures

Journal Papers

  1. W. Saitoh, K. Mori, H. Sugiura, T. Maruyama, M. Watanabe and M. Asada, "Reduction of Electrical Resistance of Nanometer-Thick CoSi2 Film on CaF2," Jpn. J. Appl. Phys., vol. 36, pp.4470-4471, 1997.

International Conference

  1. M. Asada, M. Watanabe and W. Saitoh, "Metal/Insulator/Semiconductor Heterostructure Quantum-Effect Devices on Si Substrate," (Invited) Nanostructures: Physics and Technology, SBNS. 01i, St. Petersberg (Russia), June 1997.

  2. W. Saitoh, Y. Aoki, J. Nishiyama, M. Watanabe and M. Asada, "Epitaxial Growth of Si/CdF2/CaF2 Heterostructures on Si Substrate," Electronic Materials Conference, U9, Fort Collins (U.S.A.), June 1997.

  3. M. Asada, K. Osada and W. Saitoh, "Small Area (1μm-Diam.) Metal/Insulator Resonant Tunneling Diode Applicable to Terahertz Devices," International Workshop on Nano-Physics and Electronics, G04, Tokyo (Japan), Sep. 1997.

  4. M. Tsutsui, W. Saitoh, K. Yamazaki and M. Asada, "Proposal and Analysis of Coupled Channel Tunneling FET with New Heterostructures on Silicon," International Workshop on Nano-Physics and Electronics, X20, Tokyo (Japan), Sep. 1997.

Meeting Report

  1. W. Saitoh, M. Tsutsui, Y. Aoki, K. Yamazaki, J. Nishiyama, M. Watanabe and M. Asada, "Field Effect Quantum Devices with Si/CdF2 Quantum-Well Structure on Si Substrate," 「Si基板上Si/CdF2量子井戸構造を用いた電界効果型量子効果デバイス」 Technical Report of IEICE, ED97-6, Apr. 1997.

Domestic Conferences

  1. W. Saitoh, K. Yamazaki, M. Tsutsui and M. Asada, "Analysis of Static Characteristics and Response Time of Very Short Channel Tunneling FET with CoSi2/Si/CdF2/CaF2 Heterostructures on Si Substrate," 「Si基板上CoSi2/Si/CdF2/CaF2ヘテロ構造を用いた極短チャネルトンネルFETの静特性と動作時間解析」 Nat. Conv. Rec. of IEICE Japan, C-10-17, Oosaka, Mar. 1997.

  2. W. Saitoh, Y. Aoki, J. Nishiyama, M. Watanabe and M. Asada, "Epitaxial Growth of Si/CdF2/CaF2 Heterostructures on Si Substrate," 「Si基板上Si/CdF2/CaF2ヘテロ構造エピタキシャル成長」 Nat. Conv. Rec. of The Japan Soc. of Appl. Phys., 30a-A-3, Funabashi, Mar. 1997.

  3. M. Asada, K. Osada and W. Saitoh, "Metal/Insulator Small-Area Resonant Tunneling Diode and Its Integration with Patch Antenna for Terahertz Application," 「金属／絶縁体微小面積共鳴トンネルダイオードの作製とテラヘルツ用パッチアンテナの集積」 Nat. Conv. Rec. of The Japan Soc. of Appl. Phys., 2a-ZF-12, Akita, Sep. 1997.

  4. K. Yamazaki, W. Saitoh and M. Asada, "Theoretical Analysis of Degradation of Metal/Insulator Tunneling Field Effect Transistor due to Carrier Scattering in Channel," 「金属／絶縁体トンネル電界効果トランジスタのチャネル内散乱特性劣化の解析」 Nat. Conv. Rec. of The Japan Soc. of Appl. Phys., 3p-ZF-2, Akita, Sep. 1997.

  5. M. Tsutsui, W. Saitoh, K. Yamazaki and M. Asada, "Analysis of Coupled Channel Field Effect Quantum Device on Silicon," 「シリコン基板上の結合チャネル型電界制御量子効果デバイスの解析」 Nat. Conv. Rec. of IEICI Japan, C-10-42, Tokyo, Sep. 1997.

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Light Emitting Devices Using Semiconductor(Metal)/Insulator Nanostructures

Journal of Papers

  1. M. Watanabe, W. Saitoh, Y. Aoki, J. Nishiyama, "Epitaxial growth of nanometer-thick CaF2/CdF2 heterostructures using partially ionized beam epitaxy," Solid State Electron., to be published.

International Conferences

  1. M. Watanabe, T. Matsunuma, T. Maruyama, and M. Asada, "Electroluminescence from silicon nanoparticles embedded in CaF2 on Si(111)," Phantoms Strategic Domain Meetings (PHASDOM97), D2.23c, Aachen, Germany, March 10-13, 1997.

  2. W. Saitoh, Y. Aoki, J. Nishiyama, M. Watanabe and M. Asada, "Epitaxial growth of Si/CdF2/CaF2 heterostructures on Si substrate," 39th Electronic Materials Conference, U9, pp.48-48, Colorado, U. S. A., June 25-27, 1997.

  3. M. Watanabe, W. Saitoh, Y. Aoki, J. Nishiyama, "Epitaxial growth of nanometer-thick CaF2/CdF2 heterostructure using partially ionized beam epitaxy," International Workshop on NANO-PHYSICS AND ELECTRONICS (NPE'97), X09, pp.156-157, Roppongi, Japan, Sept. 18-20, 1997.

Domestic Conferences

  1. Y. Aoki, J. Nishiyama, W. Saitoh, M. Watanabe, and M. Asada, "Analysis of CaF2/CdF2 Intersubband Transition Lasers," 「CaF2/CdF2ヘテロ接合を用いた量子井戸サブバンド間遷移レーザの解析」 Nat. Conv. Rec. of The Japan Soc. of Appl. Phys., 28a-ZA-6, Chiba, March, 1997.

  2. W. Saitoh, Y. Aoki, J. Nishiyama, M. Watanabe, and M. Asada, "Epitaxial Growth of Si/CdF2/CaF2 Heterostructures on Si Substrate," 「Si基板上Si/CdF2/CaF2ヘテロ構造エピタキシャル成長」 Nat. Conv. Rec. of The Japan Soc. of Appl. Phys., 30a-A-3, Chiba, March, 1997.

  3. M. Watanabe, Y. Iketani, H. Sugiura, K. Yoshida, "Epitaxial growth of CaF2 on low-off angle Si(111) substrate using ion assisted epitaxy," 「イオンビームアシストを用いた低オフ角Si(111)基板上へのCaF2エピタキシャル成長」 Nat. Conv. Rec. of The Japan Soc. of Appl. Phys., 4p-V-16, Akita, Oct., 1997.

  4. Y. Aoki, W. Saitoh, J. Nishiyama, M. Watanabe, "Epitaxial growth of nanometer-thick CaF2/CdF2 superlattice using partially ionized beam epitaxy," 「イオンビーム法を用いたCaF2/CdF2ヘテロ超格子の低温エピタキシャル成長」 Nat. Conv. Rec. of The Japan Soc. of Appl. Phys., 5a-ZF-2, Akita, Oct., 1997.

  5. A. Yamada, Y. Maeda, M. Watanabe, "Fabrication of nano-structure ZnO on CaF2/Si(111) and its photoluminescence spectra," 「CaF2/Si(111)基板上ZnOナノ構造形成とPL発光スペクトル」 Nat. Conv. Rec. of The Japan Soc. of Appl. Phys., 3a-ZH-9, Akita, Oct., 1997.

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Processing for Nanometer Structures

Journal Papers

  1. H.Hongo, H.Tanaka, Y.Miyamoto, T.Otake, J.Yoshinaga and K.Furuya, "Electrical properties of 100nm pitch Cr/Au fine electrodes with 40nm width on GaInAs toward hot electron interference/diffraction devices," Microelectronic Engineering, vol.35, pp.241-244 1997.

  2. M.Suhara, C.Nagao, H.Honji, Y.Miyamoto, K.Furuya and R.Takemura, "Atomically flat OMVPE growth of GaInAs and InP observed by AFM for level narrowing in resonant tunneling diodes," J.Cryst.Growth, vol.179, no.1-2, pp.18-25 1997.

International Conferences

  1. M. Tamura, T. Ando, N. Nunoya, S. Tamura, S. Arai and G. U. Bacher, "Surface damage in GaInAsP/InP wire structures by Cl2/H2-ECR dry etching," The 9th Int. Conf. on Indium Phosphide and Related Materials (IPRM'97), Hyannis (USA), ThA4, pp.582-585, May 1997.

  2. H.Hongo, Y.Miyamoto, J.Suzuki, T.Hattori, A.Kokubo, M.Suhara, and K.Furuya, "W/Cr/Au/SiO2 composite alignment mark for fabrication of interference/diffraction hot electron devices," 1997 International Conference on Solid State Device and Materials, B-10-8, Hamamatsu, Japan, Sep. 1997.

  3. M.Suhara, K.Sato, H.Honji, H.Nakamura, Y.Miyamoto and K.Furuya, "Transport anisotropy of Si delta-doped layer in InP grown by OMVPE," 1997 International Conference on Solid State Device and Materials, D-5-6, Hamamatsu, Japan, Sep. 1997.

Meeting Report

  1. M. Suhara, H. Honji, H. Nakamura, Y.Miyamoto and K.Furuya, "Si-δ doping on OMVPE grown InP surface with monolayer steps," 「OMVPE成長InP単原子ステップ表面へのSi-δドーピング」 Technical Report of IEICE, ED97-9, Apr. 1997.

Domestic Conferences

  1. H.Hongo, A.Kokubo, T.Hattori, Y.Miyamoto and K.Furuya, "25 nm pitch patterning on a GaInAs layer by using Calixarene resist," 「カリックスアレーンによるGaInAsへの25nm周期パターン転写」 Nat. Conv. Rec. of Japan Soc. Appl. Phys., 28pX-10, Chiba, Mar. 1997.

  2. X. Y. Jia, T. Kojima, Y. Hayafune, S. Tamura, M. Watanabe and S. Arai, "Reduction of the Size Fluctuation of Quantum-Wire Structures Fabricated by Proximity Effect Correction," 「近接効果補正露光による量子細線構造のサイズ揺らぎの低減」 Nat. Conv. Rec. of Japan Soc. Appl. Phys., 29a-X-4, Chiba, Mar. 1997.

  3. M. Tamura, T. Ando, N. Nunoya, S. Tamura, S. Arai and G. U. Bacher, "Surface damage in GaInAsP/InP Quantum-Wire Structures by Cl2/H2-ECR Dry-Etching," 「Cl2/H2-ECRドライエッチングによるGaInAsP/InP細線構造の作製とその損傷評価」 Nat. Conv. Rec. of Japan Soc. Appl. Phys., 30p-ZD-15, Chiba, Mar. 1997.

  4. K.Sato, M.Suhara, M.Nakamura, Y.Miyamoto, and K.Furuya, "Estimation of transport characteristics of Si delta-doping on InP monolayer steps grown by OMVPE," 「OMVPE成長InP単原子ステップへのSi-δドーピングにおける伝導特性」 Nat. Conv. Rec. of Japan Soc. Appl. Phys., 3p-ZF-15, Akita, Oct. 1997.

  5. M. Tamura, T. Ando, N. Nunoya, S. Tamura, S. Arai and M. Nakamura, "Fabrication of GaInAs(P)/InP Multiple-Quantum-Wire Structure by ECR Dry-Etching," 「ECR<ドライエッチングによるGaInAs(P)/InP多層量子細線構造の作製」 Nat. Conv. Rec. of Japan Soc. Appl. Phys., 4a-A-8, Akita, Oct. 1997.

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