LIST OF REPORT

Quantum-Film, Quantum-Wire, and Quantum-Box Lasers

Journal Papers

  1. T. Kojima, S. Arai and G. U. Bacher, "Anisotropic polarization properties of photoluminescence from GaInAsP/InP quantum-wire structures fabricated by two-step organometallic vapor phase epitaxy growth," Jpn. J. Appl. Phys., vol.37, no.1A/B, pp.L46-L49, 1998.

  2. B. Jenichen, H. T. Grahn, T. Kojima and S. Arai, "Lateral periodicity and elastic stress relaxation in GaInAsP quantum wires on InP investigated by X-ray diffractometry," J. Appl. Phys., vol.83, no.11, pp.5810-5813, June 1998.

  3. T. Kojima, M. Tamura, H. Nakaya, S. Tanaka, S. Tamura and S. Arai, "GaInAsP/InP compressively strained quantum-wire lasers fabricated by electron beam lithography and 2-step organometallic vapor phase epitaxy," Jpn. J. Appl. Phys., vol.37, no.9A, pp.4792-4800, 1998.

  4. T. Kojima, S. Tanaka, H. Yasumoto, H. Nakaya, S. Tamura and S. Arai, "Gain spectrum measurement of GaInAsP/InP compressively-strained quantum-wire lasers," Jpn. J. Appl. Phys., vol.37, no.11B, pp.L1386-L1389, 1998.

  5. T. Kojima, H. Nakaya, S. Tanaka, H. Yasumoto, S. Tamura and S. Arai, "Temperature dependence of internal quantum efficiency of 20nm-wide GaInAsP/InP compressively strained quantum-wire lasers," Jpn. J. Appl. Phys., vol.38, no.1B, pp.585-588, 1999.

International Conferences

  1. S. Arai, "Nanometer scale semiconductor photonics - Low-dimensional quantum structures towards high performance lasers -," Int’l Topical Workshop on Contemporary Photonic Technologies (CPT’98), Tokyo, Wa-04, pp.99-102, Jan. 1998.

  2. T. Kojima, H. Nakaya, S. Tanaka, H. Yasumoto, S. Tamura and S. Arai, "Optical gain measurement of GaInAsP/InP quantum-wire lasers," 15th Semiconductor Laser Symposium, 19, p.19, Yokohama, Mar. 1998.

  3. T. Kojima, H. Nakaya, S. Tanaka, S. Tamura and S. Arai, "Evaluation of internal quantum efficiency and waveguide loss of 50nm-period GaInAsP/InP quantum-wire lasers," The 10th Int. Conf. on Indium Phosphide and Related Materials (IPRM'98), WA2-4, pp.365-368, Tsukuba, May 1998.

  4. H. Nakaya, T. Kojima, S. Tanaka, S. Tamura and S. Arai, "Gain spectral characteristics of GaInAsP/InP quantum-wire lasers," The 10th Int. Conf. on Indium Phosphide and Related Materials (IPRM'98), TuP-20, pp.591-594, Tsukuba, May 1998.

  5. T. Kojima, H. Nakaya, S. Tanaka, H. Yasumoto, S. Tamura and S. Arai, "Temperature dependence of internal quantum efficiency of 20nm-wide GaInAsP/InP quantum-wire lasers," Int. Symposium on Formation, Physics and Device Application of Quantum Dot Structures (QDS’98), Th2-8, p.212, Sapporo, May/June 1998.

  6. S. Arai, T. Kojima, M. Madhan Raj, N. Nunoya, S. Tanaka and S. Toyoshima, "Long-wavelength lasers prepared by semiconductor microfabrication," submitted to the Pacific Rim Conference on Lasers and Electro-Optics (CLEO/Pacific Rim '99), (Invited), Seoul (Korea), Aug./Sep. 1999.

Meeting Reports

  1. T. Kojima, H. Nakaya, S. Tanaka, H. Yasumoto, S. Tamura and S. Arai, "Fabrication of GaInAsP/InP quantum-wire lasers and evaluation of its optical gain characteristics," 「GaInAsP/InP量子細線レーザの作製とその光学利得特性評価」 電子情報通信学会技術研究報告、光エレクトロニクス、信学技報, OPE98-39/LQE98-33, pp.25-30, Tokyo, July 1998.

Domestic Conferences

  1. S. Tanaka, T. Kojima, H. Nakaya, S. Tamura and S. Arai, "Regrowth temperature dependence of GaInAsP/InP single-layer quantum-well lasers," 「GaInAsP/InP単層量子井戸レーザの埋め込み成長温度依存性」 Nat. Conv. Res. of Japan Soc. Appl. Phys., 29p-ZH-2, DigestⅢ-p.1115, Hachioji, Mar. 1998.

  2. T. Kojima, H. Nakaya, S. Tanaka, S. Tamura and S. Arai, "Temperature dependence of threshold current density of GaInAsP/InP quantum-wire lasers," 「GaInAsP/InP量子細線レーザの発振しきい値電流の温度依存性」 Nat. Conv. Res. of Japan Soc. Appl. Phys., 29p-ZH-3, DigestⅢ-p.1115, Hachioji, Mar. 1998.

  3. H. Nakaya, T. Kojima, S. Tanaka, H. Yasumoto, S. Tamura and S. Arai, "Gain spectrum measurement of GaInAsP/InP compressively-strained quantum-wire lasers," 「GaInAsP/InP圧縮歪量子細線レーザの光利得スペクトルの測定」 Nat. Conv. Res. of Japan Soc. Appl. Phys., 29p-ZH-5, DigestⅢ-p.1116, Hachioji, Mar. 1998.

  4. S. Arai and T. Kojima, "Nano-structure fabrication using lithography and GaInAsP/InP quantum-wire lasers," 「リソグラフィーによる極微構造形成とGaInAsP/InP量子細線レーザ」 電気化学会第65回大会, Nat. Conv. Rec. of the Electrochemical Soc. of Japan, (Invited) 特1H07, p.208, Meguro, Apr. 1998.

  5. S. Tanaka, T. Kojima, H. Yasumoto, S. Tamura and S. Arai, "Fabrication of GaInAsP/InP compressively-strained single-quantum-well laser with AlInAs ESL," 「AlInAs ESL を有するGaInAsP/InP圧縮歪単層量子井戸レーザの作製」 Nat. Conv. Res. of Japan Soc. Appl. Phys., 15a-A-9, DigestⅢ-p.993, Higashi-Hiroshima, Sep. 1998.

  6. T. Kojima, S. Tanaka, H. Yasumoto, S. Tamura and S. Arai, "Regrowth layer dependence of anisotropic polarization properties of PL from GaInAsP/InP quantum-wire structure," 「GaInAsP/InP量子細線構造のPL偏光特性の埋め込み層依存性」 Nat. Conv. Res. of Japan Soc. Appl. Phys., 15p-YG-1, DigestⅢ-p.1236, Higashi-Hiroshima, Sep. 1998.

  7. H. Yasumoto, T. Kojima, N. Nunoya, S. Tanaka and S. Arai, "Temperature dependences of 1.55μm GaInAsP/InP compressively-strained MQW lasers," 「1.55μm波長GaInAsP/InP圧縮歪多重量子井戸レーザの温度特性」 Nat. Conv. Res. of Japan Soc. Appl. Phys., 28a-B-9, Noda, Mar. 1999.

  8. S. Tanaka, T. Kojima, H. Yasumoto, M. Morshed, S. Tamura and S. Arai, "Fabrication of 1.55μm GaInAsP/AlGaInAs compressively-strained quantum-wire laser," 「1.55μm帯GaInAsP/AlGaInAs圧縮歪量子細線レーザの作製」 Nat. Conv. Res. of Japan Soc. Appl. Phys., 28p-B-8, Noda, Mar. 1999.

  9. N. Nunoya, M. Nakamura, T. Kojima, S. Tanaka, I. Fukushi, S. Tamura and S. Arai, "GaInAsP/InP multiple-layered quantum-wire lasers fabricated by CH4/H2-RIE/ OMVPE regrowth," 「CH4/H2-RIE/OMVPE再成長法によるGaInAsP/InP多層量子細線レーザ」 Nat. Conv. Res. of Japan Soc. Appl. Phys., 29p-ZL-19, Noda, Mar. 1999.

　

New Types of Semiconductor Lasers

Journal Papers

  1. M. Madhan Raj, K. Numata, S. Toyoshima, and S. Arai, “GaInAsP/InP Multiple Short Cavity Laser with λ/4-Air Gap/ Semiconductor Bragg Reflectors,” Jpn. J. Appl. Phys., vol.37, pp.L1461-L1464, 1998.

International Conferences

  1. M. Madhan Raj, K. Numata, S. Toyoshima, H. Nakaya, and S. Arai, “Realization of Multiple Cavity Laser with λ/4-Air Gap/Semiconductor Reflectors,” Third Optoelectronics and Communication Conference (OECC’98), Chiba (Japan), 13B2-3, pp.44-45, July, 1998.

  2. M. Madhan Raj, S. Toyoshima and S. Arai, ”Multiple Microcavity Laser with Benzocyclobutene(BCB)/Semiconductor High Reflective mirrors fabricated by CH4/H2-RIE Dry Etching,” 16th Semiconductor Laser Symposium, Yokohama, 3, March, 1999.

  3. N. Nunoya, M. Nakamura, T. Kojima, S. Tanaka, S. Tamura and S. Arai, “Low threshold current density (330A/cm2) operation of 1.55μm GaInAsP/InP MQW-DFB lasers with separated periodic active regions,” 16th Semiconductor Laser Symposium, Yokohama, 3, March, 1999.

  4. M. Madhan Raj, S. Toyoshima, and S. Arai, “Multiple Micro-Cavity Laser with λ/4-Wide Deep Grooves Buried with Benzocyclobutene,” The 11th Int. Conf. on Indium Phosphide and Related Materials (IPRM's), May, 1999.

  5. N. Nunoya, M. Nakamura, S. Tanaka, H. Yasumoto, I. Fukushi, S. Tamura and S. Arai, "Low damage GaInAsP/InP nano-Structures by CH4/H2 reactive ion etching and its application to low threshold gain-coupled DFB lasers," The 11th Int. Conf. on Indium Phosphide and Related Materials (IPRM'99), May, 1999.

　

Domestic Conferences

  1. M. Madhan Raj, K. Numata, S. Toyoshima, S. Peng, Y. Miyamoto, and S. Arai, "Application of Benzocyclobutene (BCB) Polymer to Active Opto-electronics Devices," 「ベンゾシクロブテン(BCB)の動的光デバイスへの応用」Nat. Conv. Res. of Japan Soc. Appl. Phys., (30a-ZH-9), Tokyo, March 1998.

  2. K. Numata, M. Madhan Raj, S. Toyoshima, H. Nakaya, and S. Arai, "Fabrication of Multiple Microcavity Laser having Air/Semiconductor-Bragg Reflective Mirrors," 「空気/半導体-ブラッグ反射鏡を有する多重極微共振器半導体レーザの試作」 Nat. Conv. Res. of Japan Soc. Appl. Phys., (30a-ZH-8), Tokyo, March 1998.

  3. M. Madhan Raj, S. Toyoshima, Y. Saka, T. Kojima, and S. Arai, “Analysis of threshold current of a high Optical Confinement semiconductor Laser” 「高屈折率差光閉じ込め半導体レーザのしきい値電流解析」Nat. Conv. Res. of Japan Society of Applied Phys., (15a-A-19), Hiroshima, September 1998.

  4. S. Toyoshima, M. Madhan Raj, H. Yasumoto, and S. Arai, “Fabrication of Multiple Microcavity Laser using CH4/H2-RIE Dry etching” 「CH4/H2ドライエッチングを用いた多重極微共振器半導体レーザの試作」 Nat. Conv. Res. of Japan Society of Applied Phys., (15a-A-25), Hiroshima, September 1998.

  5. M. Madhan Raj, S. Toyoshima, A. Matsutani, M. Oyake, Y. Saka, and S. Arai, “Measurement of CH4/H2-RIE Etched Mirror Roughness and Its Application to Semiconductor Lasers”, 「CH4/H2-RIEエッチトミラーのラフネス測定と半導体レーザへの応用」Nat. Conv. Res. of Japan Society of Applied Phys., (28p-ZC-11),Tokyo, March 1999

  6. S. Toyoshima, M. Madhan Raj, M. Oyake and S. Arai, ”Multiple Microcavity Laser with BCB/Semiconductor Reflectors by CH4/H2-RIE Dry Etching” 「CH4/H2ドライエッチングを用いたBCB/半導体反射鏡を有する多重極微共振器レーザ」Nat. Conv. Res. of Japan Society of Applied Phys., (28p-B-4)Tokyo, March 1999.

  7. N. Nunoya, M. Nakamura, S. Tanaka, H. Yasumoto, S. Tamura and S. Arai, “ GaInAsP/InP Lasers Fabricated by CH4/H2-RIE and OMVPE Regrowth,” 「CH4/H2-RIEとOMVPE 埋め込み再成長によるGaInAsP/InP DFBレーザの作製」 Nat. Conv. Rec. of Japan Soc. Appl. Phys., 28p-B-10, Chiba, March 1999.

　

Semiconductor Photonic Devices

Domestic Conferences

  1. T. Shimizu, S. Yamazaki, S. Tamura and S. Arai, "Waveguide Width Dependence of Crosstalk for MQW Directional-Coupler type All-Optical Switch." 「MQW方向性結合型全光スイッチにおけるクロストークの導波路幅依存性」 Nat. Conv. Rec. of Japan Soc. Appl. Phys., 29a-SZL-3, DigestⅢ-p.1130, Tokyo, Mar. 1998.

　

Quantum Coherent Electron Devices

Journal Papers

  1. T.Oobo, R.Takemura, K.Sato, M.Suhara, Y.Miyamoto and K.Furuya, "Effect of spacer layer thickness in energy level width narrowing in GaInAs/InP resonant tunneling diodes grown by OMVPE",Jpn. J. Appl. Phys. Vol.37(1998) pp.445-449,Part 1, No. 2, 1998.

  2. Y.Miyamoto, A.Yamaguchi, K. Oshima, W.Saitoh and M.Asada, "Metal-Insulator-Semiconductor emitter with epitaxial CaF2 layer as insulator" , J. Vac. Sci. Technol. , vol.B 16, pp.851-854, no. 2 , Mar/Apr 1998.

  3. Y.Miyamoto, J.Yoshinaga, H.Toda, T.Arai, H.Hongo, T.Hattori, A.Kokubo and K.Furuya, "Sub-micron GaInAs/InP Hot Electron Transistors by EBL process and size dependence of current gain", Solid State Electronics, vol.42, No. 7-8, pp.1467-1470, 1998.

  4. N. Machida, B. Hansson, K. Furuya, L. -E. Wernersson and L. Samuelson, “Proposal for a Solid State Biprism Device”, Jpn. J. Appl. Phys. Vol. 37 (1998) pp. 4311-4315, Part 1, No. 8, 1998.

  5. N. Kikegawa, K. Furuya, F. Vazquez and Y. Ikeda; “Characteristics and Reduction of Noise in Scanning Hot Electron Microscopy”, Jpn. J. Appl. Phys Vol. 37 pp. 6580-6584 (1998).

International Conferences

  1. Y.Miyamoto, "Analysis of deflection sub-milimeter-wave amplifier" 11th International Vacuum Microelectronics Conference, Asheville, NC, USA, Aug. 1998

  2. Y.Miyamoto, H.Tobita, K.Oshima, and K.Furuya "GaInAs/AlAs/InP resonant tunneling diodes by MOVPE", Topical Workshop on Heterostructure Microelectronics (TWHM'98) Hayama, Japan, Aug.-Sept., 1998.

  3. M.Suhara, T.Oobo, X.Z.Xu, Y.Miyamoto, and K.Furuya, "Evaluation of phase coherent length at high temperature up to 180 K using triple barrier resonant tunneling diode", 25 th Int. Symp. Compound Semiconductor, We-P23,Nara, Japan, Oct., 1998.

  4. M.Suhara, L. -E. Wernersson, B. Gustafson, N. Carlsson, W. Seifert, L. Samuelson and K. Furuya, "Gated resonant tunneling structures with buried tungsten grating adjacent to semiconductor heterostructure", International Conference on Solid State Devices and Materials, C-2-2, Hiroshima, Japan, Sep.,1998.

  5. N. Machida and K. Furuya, “Analysis of Phase Breaking Effect in Triple-Barrier Resonant-Tunneling Diodes”, 6 th International Workshop on Computational Electronics (IWCE-6), TuE14, Osaka, Japan, Oct., 1998.

Meeting Report

  1. Y.Miyamoto, “Analysis of sub-millimeter-wave amplification by Deflectron,” 「ディフレクトロンによるサブミリ波増幅の解析」 Technical Report of IEICE, ED98-170, 1998.

  2. K. Oshima, Y. Miyamoto, W. Saitoh, T. Maruyam and M. Watanabe, “Improvement of emission current stability and lowering of emission threshold voltage using tetrahedral amorphous carbon of MIS tunneling emitter with epitaxial CaF2 insulator layer”, 「エピタキシャルCaF2を用いたMIS電子トンネルエミッタのエミッション電流安定化及びta-Cによる電子放出閾値電圧の低下」, Technical Report of IEICE, ED98-168, 1998.

Domestic Conferences

  1. T. Oobo, K. Kyo, M. Suhara, Y. Miyamoto and K. Furuya, “Design and Fabrication of GaInAs/InP Triple-Barrier Resonant Tunneling Diodes toward the Estimation of Phase Coherence of Electron Wave”,「電子波位相コヒーレンス評価のためのGaInAs/InP 3重障壁共鳴トンネルダイオードの設計と作製」, Nat. Conv. Rec. of Japan Soc. Appl. Phys., 28a-R-7, Hachioji Mar. 1998.

  2. N. Machida, B. Hanssosn, K. Furuya and L. Samuelson, “Theoretical Analysis of Electron Wave Biprism Effects in Solid State”, 「固体中電子波バイプリズム効果の理論解析」, Nat. Conv. Rec. of Japan Soc. Appl. Phys., 31a-R-1, Hachioji Mar. 1998.

  3. Y.Miyamoto, “Analysis of Deflection Sub-millimeter-wave Amplifier,” 「真空中偏向ビームによるサブミリ波増幅の解析」 Nat. Conv. Rec. of IEICE, Yamanashi, C-10-25. 1998.

  4. Y.Miyamoto, H.Tobita, K.Oshima, and K.Furuya, GaInAs/AlAs/InP resonant tunneling diodes by MOVPE 「MOVPEによるGaInAs/AlAs/InP共鳴トンネルダイオード」, Nat. Conv. Rec. of Japan Soc. Appl. Phys., 18p-YA-7 , Hiroshima Sep.1998

  5. K. Oshima, Y. Miyamoto, W. Saitoh, T. Maruyama and M. Watanabe, “Improvement of emission current stability of MIS tunneling emitter”, 「MIS電子トンネルエミッタのエミッション電流安定化」, Nat. Conv. Res. of Japan Soc. Appl. Phys., 17a-A-8, Hiroshima, Sep. 1998.

  6. M. Suhara, L. -E. Wernersson, B. Gustafson, N. Carlsson, W. Seifert, L. Samuelson and K. Furuya, “Vertical current control due to a buried fine metal gate in resonant tunneling structures”, 「微細埋め込み金属ゲートを用いた共鳴トンネル電流の制御」, Nat. Conv. Res. of Japan Soc. Appl. Phys., 15a-ZN-2, Hiroshima, Sep. 1998.

  7. M. Nagase, T. Oobo, M. Suhara, Y. Miyamoto and K. Furuya, “Measurement of resonant energy widths in triple-barrier resonant tunneling diodes - Emitter Fermi energy dependence -”,「3重障壁トンネルダイオードの共鳴準位幅測定 - エミッタのフェルミ準位依存性 - 」, Nat. Conv. Res. of Japan Soc. Appl. Phys., 15a-ZN-9, Hiroshima, Sep. 1998.

  8. N. Machida, K. Furuya. B. Hansson. L. -E. Hansson, L. Samuelson, “Analysis of interference fringes in Solid State Biprism Devices”, 「固体バイプリズムデバイス中の干渉縞解析」, Nat. Conv. Res. of Japan Soc. Appl. Phys., 16a-ZN-12, Hiroshima, Sep. 1998.

  9. B. Zhang, K. Furuya, Y. Ikeda and N. Kikegawa, ”Effect of valence electrons on tunneling current in the experiment of SHEM for n+-Si/CaF2/Au structure”, Nat Conv. Rec . of Japna Soc. Appl. Phys.,15ax-2 Hiroshima,1998.

  10. N. Kikegawa, B. Zhang, K. Furuya, Y. Ikeda and N. Sakai,;” Hot electron detection for Scanning Hot Electron Microscope”, 「走査型ホットエレクトロン顕微鏡に向けたホットエレクトロン検出」、Nat Conv. Rec . of Japna Soc. Appl. Phys.,15ax-3 Hiroshima,1998

  11. Y. Ikeda, B. Zhang, N. Kikegawa and K. Furuya;” Theoretical hot electron current density of GaInAs/AlAs DBRTD emitter”, 「GaInAs/AlAs　　DBRTDホットエレクトロンエミッタの電流密度とエネルギの関係」、Nat Conv. Rec . of Japna Soc. Appl. Phys.,15ax-1 Hiroshima,1998

  12. N. Kikegawa, K. Furuya, N. Matsumoto and Y. Ikeda,;” noise reduction for SHEM using the digital measurement”, 「ディジタル計測処理による走査型ホットエレクトロン顕微鏡のノイズ抑制」、Nat Conv. Rec . of Japna Soc. Appl. Phys.,30PZD-9 Tokyo,,1998.

　

High-Speed Electron Devices Using Nanometer-thick Metal/Insulator Layered Heterostructures

Journal Papers

1. M. Asada, K. Osada and W. Saitoh, "Theoretical Analysis and Fabrication of Small Area Metal/Insulator Resonant Tunneling Diode Integrated with Patch Antenna for Terahertz Photon Assisted Tunneling" Solid State Electron., vol.42, pp.1543-1546,1998.

2. M. Tsutsui, W. Saitoh, K. Yamazaki and M. Asada, "Proposal and Analysis of Coupled Channel Tunneling FET with New Heterostructures on Silicon" Solid State Electron, vol.42, pp.1547-1551, 1998.

3. W. Saitoh, K. Yamazaki, M. Tsutsui and M. Asada, "Analysis of the Influence of Carrier Scattering in the Channel of a Metal/Insulator Tunneling Field Effect Transistor" Japan. J. Appl. Phys., vol.37, pp.5921-5925, 1998.

4. W. Saitoh, K. Yamazaki, M. Tsutsui, A. Itoh and M. Asada, "Fabrication and Characteristics of a Field Effect Transistor Using CdF2/CaF2 Heterostructures on a Si Substrate" Japan. J. Appl. Phys., vol.37, pp.L1138-L1140, 1998.

5. W. Saitoh, K. Yamazaki, M. Tsutsui and M. Asada, "Analysis of Structure Dependence of Very Short Channel Field Effect Transistor Using Vertical Tunneling with Heterostrucures on Silicon" IEICE Trans. Electron., vol.E81-C, pp.1918-1925, 1998.

Domestic Conferences

1. W. Saitoh, K. Yamazaki, M. Tsutsui, A. Itoh and M. Asada, "Fabrication of Field Effect Transistor Using CdF2/CaF2 Heterostructures on Si Substrate",　「Si基板上CdF2/CaF2ヘテロ構造を用いた電界効果型トランジスタの作製」, Nat. Conv. Rec. of Japan Soc. Appl. Phys., 28a-R-4, Hachioji Mar. 1998.

2. W. Saitoh, S. Yamagami, A. Itoh and M. Asada, "Fubrication of Sub 0.1 μm Channel Schottky MOS-FET on SIMOX Substrate", 「SIMOX基板上 Sub 0.1μmチャネルSchottky MOSFETの作製」, Nat. Conv. Rec. of Japan Soc. Appl. Phys., 15a-P9-8, Hiroshima Sep. 1998.

3. Y. Oguma, N. Sashinaka, W. Saitoh and M. Asada, "Fabrication of Patch Antenna and Measurement of induced voltage in submilimeter wave range for observation of Photon Assist Tunneling", 「フォトンアシストトンネリング観測用サブミリ波帯パッチアンテナの作製と高周波誘起電圧の測定」, Nat. Conv. Rec. of Japan Soc. Appl. Phys., 17p-ZB-13, Hiroshima Sep. 1998.

4. W. Saitoh, S. Yamagami, A. Itoh and M. Asada, "35nm metal gate p-type Schottcky MOSFET on SIMOX Substrate", 「SIMOX基板上 35nm金属ゲートp型 Schottky MOSFETの作製」, Nat. Conv. Rec. of Japan Soc. Appl. Phys., 30p-ZM-13, Noda Mar. 1999.

5. A. Itoh, W. Saitoh, S. Yamagami and M. Asada, "Analysis of short channel Schottcky MOSFET on SOI Substrate and Fabrication of n-type devices",「SOI基板上 短チャネルSchottky MOSFETの特性解析とn形素子の作製」, Nat. Conv. Rec. of Japan Soc. Appl. Phys., 30p-ZM-14, Noda Mar. 1999.

6. Y. Oguma, N. Sashinaka, W. Saitoh and M. Asada, "Observation of THz rectification of the Triple-barrier resonant tunneling diode", 「三重障壁共鳴トンネルダイオードにおけるTHz検波出力特性の観測」, Nat. Conv. Rec. of Japan Soc. Appl. Phys., 30a-Y-10, Noda Mar. 1999.

　

　

Light Emitting Devices Using Semiconductor(Metal)/Insulator

Nanostructures

Journal Papers

  1. M. Watanabe, W. Saitoh, Y. Aoki, J. Nishiyama, "Epitaxial growth of nanometer-thick CaF2/CdF2 heterostructures using partially ionized beam epitaxy," Solid State Electron., 42, 7-8, pp.1627-1630, 1998.

  2. M. Watanabe, T. Matsunuma, T. Maruyama, Y. Maeda, "Electroluminescence of Nanocrystal Si Embedded in Single-Crystal CaF2/Si(111)," Jpn. J. Appl. Phys., 37, 5B, pp.L591-L593, 1998.

  3. M. Watanabe, Y. Aoki, W. Saitoh and M. Tsuganezawa, "Negative Differential Resistance of CdF2/CaF2 Resonant Tunneling Diode on Si(111) Grown by Partially Ionized Beam Epitaxy," Jpn. J. Appl. Phys., 38, 2A, pp.L116-L118, 1999.

  4. M. Watanabe, T. Maruyama, S. Ikeda, "Light emission from Si nanocrystals embedded in CaF2 epilayers on Si(111): effect of rapid thermal annealing," J. Luminescence, to be published.

International Conferences

  1. M. Watanabe, T. Maruyama, S. Ikeda, “Light Emission from Nanocrystal Si Embedded in CaF2 Epilayers on Si(111): Effect of Rapid Thermal Annealing,” E-MRS 1998 Spring Meeting, B-II/P.10, pp.B-29-B-29, Strasbourg, France, June 16-19, 1998.

  2. M. Watanabe, Y. Aoki, W. Saitoh, M. Tsuganezawa, “Negative Differential Resistance of CdF2/CaF2 Resonant Tunneling Diode on Si(111) Grown by Partially Ionized Beam Epitaxy,” 40th Electronic Materials Conference, G9, pp.13-13, Virginia, U.S.A., June 24-26, 1998.

  3. M. Watanabe, Y. Maeda, A. Yamada, “Epitaxial growth of nanocrystal ZnO on CaF2/Si(111),” 1998 Materials Research Society Fall meeting, D4.8, pp.84-84, Boston, U.S.A., Nov. 30-Dec. 4, 1998.

Domestic Conferences

  1. Y. Aoki, M. Tsuganezawa, W. Saitoh and M. Watanabe, "Negative Differential Resistance of the Triple-barrier RTD using Epitaxial CaF2/CdF2 Superlattice," 「CaF2/CdF2ヘテロ超格子による3重障壁共鳴トンネルダイオードの微分負性抵抗」The 45th Spring Meeting of The Jpn. Soc. Of Appl. Phys. And Related Societies, 28a-R-2, Tokyo, March , 1998.

  2. Y. Maeda, A. Yamada and M. Watanabe, "Electroluminescence spectra from ZnO nano-structure on CaF2/Si(111)," 「CaF2/Si(111)基板上ZnOナノ構造からのEL発光スペクトル」The 45th Spring Meeting of The Jpn. Soc. Of Appl. Phys. And Related Societies, 29a-S-2, Tokyo, March , 1998.

  3. K. Osada, Y. Aoki, M. Tsuganezawa and M. Watanabe, "Analysis of Si/CaF2 intersubband transition lasers," 「Si/CaF2超格子によるサブバンド間遷移レーザレーザの解析」The 45th Spring Meeting of The Jpn. Soc. Of Appl. Phys. And Related Societies, 30p-R-4, Tokyo, March , 1998.

  4. T. Maruyama, S. Ikeda, M. Watanabe, "Growth condition dependence of photoluminescence spectra from nano-cryatalline Si embedded in CaF2/Si(111) thin film," 「CaF2/Si(111)薄膜中に形成されたSi微結晶からのPL発光スペクトルの成長条件依存性」The 45th Spring Meeting of The Jpn. Soc. Of Appl. Phys. And Related Societies, 29a-p-8, Tokyo, March , 1998.

  5. T. Maruyama, N. Nakamura, M. Watanabe, "RTA ambient dependence of PL spectra from nano-crystalline Si embedded in CaF2/Si(111) thin film," 「CaF2/Si(111)薄膜中に形成されたSi微結晶からのPL発光スペクトルのRTA雰囲気依存性」The 58th Autumn Meeting of The Jpn. Soc. Of Appl. Phys, 16a-ZE-8, Hiroshima, Sept. , 1998.

　

Processing for Nanometer Structures

Journal Papers

  1. H. Hongo, Y. Miyamoto, J. Suzuki, M. Suhara, and K.Furuya, "Wrapped alignment mark for fabrication of interference/diffraction hot electron devices", Jpn. J. Appl. Phys.. vol.37, pp.1518-1521, No.3B 1998.

  2. A.Kokubo, T.Hattori, H.Hongo, M.Suhara, Y.Miyamoto , and K.Furuya, "25 nm Pitch GaInAs/InP Buried Structure by Calixarene Resist" Jpn. J. Appl. Phys., vol.37 No. 7A, pp.L827-L829, 1998.

  1. Y.Miyamoto , A.Kokubo, T.Hattori, H.Hongo, M.Suhara, and K.Furuya, "25 nm pitch GaInAs/InP buried structure : Improvement by calixarene as EB resist and TBP as P-source in OMVPE regrowth", J. Vac. Sci. Technol. B, vol.16, no.6, pp.3894-3898, 1998.

  2. M. Tamura, T. Ando, M. Nunoya, S. Tamura, S. Arai and G. U. Bacher, "Estimation of Sidewall Nonradiative Recombination in GaInAsP/InP Wire Structures Fabricated by Low Energy Electron-Cyclotron-Resonance Reactive-Ion-Beam-Etching," Jpn. J. Appl. Phys., vol.37, no. 6A, pp.3576-3584, 1998.

  3. T. Kojima, X. Y. Jia, Y. Hayafune, S. Tamura, M. Watanabe and S. Arai, "Size Fluctuation of 50nm Periodic GaInAsP/InP Wire Structure by Electron Beam Lithography and Wet Chemical Etching," Jpn. J. Appl. Phys., vol. 37, no. 11, pp. 5961-5962, 1998.

  4. M. Tamura, T. Kojima, T. Ando, N. Nunoya, S. Tamura and S. Arai, "Sidewall Recombination Velocity in GaInAsP/InP Quantum-Wire Lasers with Wire-like Active Region Fabricated by Wet-Chemical Etching and Organo-Metallic Vapor-Phase-Epitaxial Regrowth," Jpn. J. Appl. Phys., vol. 37, no. 12A, pp. 6569-6574, 1998.

International Conferences

  1. Y.Miyamoto , A.Kokubo, T.Hattori, H.Hongo, M.Suhara, and K.Furuya, "25 nm Pitch GaInAs/InP Buried Structure by Calixarene Resist", 42nd International Conference on Electron, Ion and Photon Beam Technology and Nanofabrication, Chicago, IL, USA, May 1998.

Meeting Report

  1. A. Kokubo, T. Hattori, M. Kurahashi, H. Oguchi, M. Suhara, Y. Miyamoto and K. Furuya, “A 25-nm-pitch buried heterostructure and a 80-nm-pitch electrode for hot electron interference device, ”「ホットエレクトロン干渉現象観測のための25nm周期埋込みヘテロ構造と80nm周期電極の作製」 Technical Report of IEICE, ED98-132, pp.51-56, 1998.

Domestic Conferences

  1. T.Arai, E.Zhang, T.Hattroi, A.Kokubo, M.Suhara, Y.Miyamoto and K.Furuya, “Fabrication of 20 nm tungsten wire by SiO2 lift-off and InP buried growth,” 「SiO2リフトオフによる幅20nmタングステンワイヤの作製とInPの埋め込み成長」 Nat. Conv. Rec. of Japan Soc. Appl. Phys., 28aPC-22, Hachioji, Mar. 1998.

  1. A.Kokubo, T.Hattroi, M.Suhara, Y.Miyamoto and K.Furuya, “Fabrication of a 25 nm pitch GaInAs/InP buried structure,” 「25nm周期GaInAs/InP埋込み構造の作製」 Nat. Conv. Rec. of Japan Soc. Appl. Phys., 29aPC-19, Hachioji, Mar. 1998.

  2. T.Arai, M.Suhara, Y.Miyamoto and K.Furuya, “Buried growth of InP over tungsten stripes using organometallic vapor phase epitaxy,” 「OMVPE法を用いたタングステンのInP埋め込み成長」 Nat. Conv. Rec. of Japan Soc. Appl. Phys., 17p-YE-11, Hiroshima, Sept.. 1998.

  3. A.Kokubo, T.Hattroi, M.Suhara, Y.Miyamoto and K.Furuya, “Improvement of regrowth condition for a GaInAs/InP buried periodic structure with TBP,” 「TBPを用いたGaInAs/InP埋め込み周期構造の再成長条件」 Nat. Conv. Rec. of Japan Soc. Appl. Phys., 17p-YG-10, Hiroshima, Sept.. 1998.

  4. A.Kokubo, M.Kurahashi, H.Oguchi, Y.Miyamoto and K.Furuya, “Fabrication of a periodic electrode by lift-off using two-layer resist consisting of ZEP incorporating and PMMA,” 「C60複合ZEP-520/PMMA2層レジストリフトオフによる周期電極の作製」 Nat. Conv. Rec. of Japan Soc. Appl. Phys., 16a-B-1, Hiroshima, Sept.. 1998.

  1. T. Shimizu, S. Yamazaki, S. Tamura and S. Arai, "Waveguide Width Dependence of Crosstalk for MQW Directional-Coupler type All-Optical Switch." 「MQW方向性結合型全光スイッチにおけるクロストークの導波路幅依存性」 Nat. Conv. Rec. of Japan Soc. Appl. Phys., (29a-SZL-3), Tokyo, Mar. 1998.

  2. M. Tamura, T. Ando, N. Nunoya, S. Tamura and S. Arai, "Estimation Sidewall Recombination Velocity of GaInAsP/InP Multiple Wire Laser from Its Spontaneous Emission Efficiency," 「GaInAsP/InP細線レーザの自然放出光効率からの表面再結合速度の見積もり」Nat. Conv. Rec. of Japan Soc. Appl. Phys., (29p-ZH-4), Tokyo, Mar. 1998.

  3. N. Nunoya, M. Nakamura and S. Arai, "Depth Profile of Damage Induced by ECR-RIBE with Cl2 gas," 「塩素ガスECR-RIBEによるInP系結晶底面方向への損傷分布のPL評価」 Nat. Conv. Rec. of Japan Soc. Appl. Phys., (17p-P12-2), Hiroshima, Sep. 1998.

  4. M. Nakamura, N. Nunoya, I. Fukushi, S. Tamura and S. Arai, “CH4/H2 Dry Etching/OMVPE Regrowth for GaInAsP/InP Low-Dimensional Quantum-Well Structure,” 「GaInAsP/InP 低次元量子井戸構造のためのCH4/H2ドライエッチング/埋め込み再成長」 Nat. Conv. Rec. of Japan Soc. Appl. Phys., 28-p-ZC-9, Chiba, Mar. 1998.