LIST OF REPORT

 

Quantum-Film, Quantum-Wire, and Quantum-Box Lasers

 

Journal Papers

 

1.         T. Kojima, H. Nakaya, S. Tanaka, H. Yasumoto, S. Tamura and S. Arai, “Temperature Dependence of Internal Quantum Efficiency of 20nm-Wide GaInAsP/InP Compressively Strained Quantum-Wire Lasers,” Jpn. J. Appl. Phys., vol.38, no.1B pp.585-588, 1999.

2.         D. Lübbert, B. Jenichen, T. Baumbach, H. T. Grahn, G. Paris, A. Mazuelas, T. Kojima and S. Arai, “Elastic Stress Relaxation in GaInAsP Quantum Wires on InP,” J. Phys. D: Appl. Phys., vol.32, pp.A21-A25, 1999.

3.         N. Nunoya, M. Nakamura, H. Yasumoto, S. Tamura and S. Arai, “Low Threshold GaInAsP/InP Distributed Feedback Lasers with Periodic Wire Active Regions Fabricated by CH4/H2 Reactive Ion Etching,” Jpn. J. Appl. Phys., vol.38, no.11B, pp.L1323-L1326, 1999.

4.         T. Kojima, S. Tanaka, H. Yasumoto, S. Tamura and S. Arai, “Evaluation of Optical Gain Properties of GaInAsP/InP Compressively Strained Quantum-Wire Lasers,” Jpn. J. Appl. Phys., vol.38, no.11A, pp. 6327-6334, 1999.

 

International Conferences

 

1.       N. Nunoya, M. Nakamura, T. Kojima, S. Tanaka, S. Tamura and S. Arai, “Low Threshold Current Density (330A/cm2) Operation of 1.55mm GaInAsP/InP MQW-DFB Lasers with Separated Periodic Active Regions,” 16th Semiconductor Laser Symposium (29th precision & Intelligence Lab. Symposium), 17, p.17, Yokohama (Japan), Mar. 1999.

2.       N. Nunoya, M. Nakamura, S. Tanaka, H. Yasumoto, I. Fukushi, S. Tamura and S. Arai, “Low Damage GaInAsP/InP Nano-Structures by CH4/H2 Reactive Ion Etching and Its Application to Low Threshold Gain-Coupled DFB Lasers,” The 11th Int. Conf. on Indium Phosphide and Related Materials (IPRM'99), TuB4-1, pp.349-352, Davos (Switzerland), May 1999.

3.       N. Nunoya, M. Nakamura, T. Kojima, S. Tanaka, H. Yasumoto, S. Tamura and S. Arai, “GaInAsP/InP Distributed Feedback Lasers with Periodic Wire-like Active Region Fabricated by CH4/H2 Reactive-Ion-Etching,” The 3rd Pacific Rim Conf. on Lasers and Electro-Optics (CLEO/PR'99), FU3, Seoul (Korea), pp.1291-1292, Sep. 1999.

4.       S. Arai, T. Kojima, M. M. Raj, N. Nunoya, S. Tanaka and S. Toyoshima, “Long-Wavelength Lasers Prepared by Semiconductor Microfabrication,” The 3rd Pacific Rim Conf. on Lasers and Electro-Optics (CLEO/PR'99), FU4(Invited), pp.1293-1294, Seoul (Korea), Aug./Sep. 1999.

5.       N. Nunoya, M. Nakamura, H. Yasumoto, S. Tamura and S. Arai, “GaInAsP/InP Multiple Layered Quantum-Wire Lasers Fabricated by CH4/H2 Reactive-Ion-Etching,” The 31st Int. Conf. on Solid State Devices and Materials (SSDM'99), E-5-3, pp.276-277, Tokyo (Japan), Sep. 1999.

6.       S. Arai, T. Kojima, N. Nunoya, M. Nakamura, H. Yasumoto, M. Morshed and S. Tamura, “GaInAsP/InP Quantum-Wire Lasers,” The 4th Optoelectronics and Communications Conf. (OECC'99), C6S1-1(Invited), pp.1294-1297, Beijing (China), Oct. 1999.

7.       M. Nakamura, N. Nunoya, H. Yasumoto, S Tamura and S. Arai, “GaInAsP/InP High Index Coupled (ki=290 cm-1) DFB Laser with Periodic Wire-like Active Regions; The 4th Optoelectronics and Communications Conf. (OECC'99), C6S5-4, pp.1454-1455. Beijing (China), Oct. 1999.

8.       S. Arai, N. Nunoya, M. Nakamura, H. Yasumoto and S. Tamura, “1.5 mm Wavelength GaInAsP/InP Low Threshold Current Lasers by Low-Damage CH4/H2-RIE and OMVPE Regrowth,” Int. Symposium on Ultra-Parallel Optoelectronics (30th Precision & Intelligence Lab. Symposium), C-2, pp.27-28, Kawasaki (Japan), Mar. 2000.

9.       N. Nunoya, M. Nakamura, H. Yasumoto, M. Morshed, K. Fukuda, S. Tamura, and S. Arai, “1.5mm GaInAsP/InP Double-Quantum-Well DFB Lasers with Deeply Etched Active Regions,” to be presented at the 12th Int. Conf. on Indium Phosphide and Related Materials (IPRM'00), TuA2, Williamsburg (Virginia, USA), May 2000.

10.   H. Yasumoto, N. Nunoya, H. Midorikawa, S. Tamura and S. Arai, “1.5mm Wavelength Strain-Compensated GaInAsP/InP Wirelike Laser by CH4/H2 Reactive Ion Etching,” to be presented at the 12th Int. Conf. on Indium Phosphide and Related Materials (IPRM'00), WA3, Williamsburg (Virginia, USA), May 2000.

 

Meeting Reports

 

1.       N. Nunoya, M. Nakamura, T. Kojima, S. Tanaka, H. Yasumoto S. Tamura and S. Arai, “GaInAsP/InP Multiple Quantum Wire Lasers Fabricated by CH4/H2 Dry Etching and Regrowth,” ｢CH4/H2ドライエッチングと埋め込み再成長によるGaInAsP/InP多層量子細線レーザ｣ Technical Report of IEICE, OPE99-44, LQE99-38, pp.57-62, Tokyo (Japan), July 1999.

 

Domestic Conferences

 

1.         H. Yasumoto, T. Kojima, N. Nunoya, S. Tanaka and S. Arai, “Temperature Dependences of 1.55mm GaInAsP/InP Compressively-Strained MQW Lasers,” 「1.55mm波長帯GaInAsP/InP圧縮歪多重量子井戸レーザの温度特性」 Nat. Conv. Res. of Japan Soc. Appl. Phys., 28a-B-9, Digest III -p.1185, Noda, Mar. 1999.

2.         S. Tanaka, T. Kojima, H. Yasumoto, M. Morshed, S. Tamura and S. Arai, “Fabrication of 1.55mm GaInAsP/AlGaInAs Compressively-Straned Quantum-Wire Laser,” ｢1.55mm帯GaInAsP/AlGaInAs圧縮歪量子細線レーザの作製｣ Nat. Conv. Res. of Japan Soc. Appl. Phys., 28p-B-8, Digest III -p.1189, Noda, Mar. 1999.

3.         N. Nunoya, M. Nakamura, S. Tanaka, H. Yasumoto, S. Tamura and S. Arai, “GaInAsP/InP DFB Lasers Fabricated by CH4/H2-RIE and OMVPE Regrowth,” ｢CH4/H2-RIEとOMVPE 埋め込み再成長によるGaInAsP/InP DFBレーザの作製｣ Nat. Conv. Res. of Japan Soc. Appl. Phys., 28p-B-10, Digest III -p.1189, Noda, Mar. 1999.

4.         N. Nunoya, M. Nakamura, T. Kojima, S. Tanaka, I. Fukushi, S. Tamura and S. Arai, “GaInAsP/InP Multiple-Layered Quantum Wire Lasers Fabricated by CH4/H2-RIE/ OMVPE Regrowth,” ｢CH4/H2-RIE/OMVPE再成長法によるGaInAsP/InP多層量子細線レーザ｣ Nat. Conv. Res. of Japan Soc. Appl. Phys., 29p-ZL-19, Digest III -p.1459, Noda, Mar. 1999.

5.         M. Nakamura, N. Nunoya, H. Yasumoto, S. Tamura and S. Arai, “Characteristics of High Index Coupled DFB Laser with Periodic Wire-like Active Region,” ｢強屈折率結合を有する活性層分離型DFBレーザの特性｣ Nat. Conv. Res. of Japan Soc. Appl. Phys., 3a-ZE-42, Digest III -p.980, Kobe, Sep. 1999.

6.         N. Nunoya, M. Nakamura, M. Morshed, H. Yasumoto, S. Tamura and S. Arai, “GaInAsP/InP Multiple Layered Wire Structure Laser,” ｢GaInAsP/InP多層細線構造レーザの試作｣ Nat. Conv. Res. of Japan Soc. Appl. Phys., 3a-ZE-43, Digest III -p.981, Kobe, Sep. 1999.

7.         M. Nakamura, N. Nunoya, M. Morshed, H. Yasumoto, S. Tamura and S. Arai, “Wire Wudtg Dependences of Threshold Current for 2QW DFB Lasers with Wirelike Active Region,” ｢活性層分離型2層DFBレーザのしきい値電流の細線幅依存性｣ Nat. Conv. Res. of Japan Soc. Appl. Phys., 30p-N-1, Tokyo, Mar. 2000.

8.         N. Nunoya, M. Nakamura, K. Fukuda, M. Morshed, S. Tamura and S. Arai, “Submilliampere Operation of BH-DFB Laser with Wirelike Active Region,” ｢活性層分離型DFBレーザのサブミリアンペア動作｣ Nat. Conv. Res. of Japan Soc. Appl. Phys., 30p-N-2, Tokyo, Mar. 2000.

9.         H. Yasumoto, N. Nunoya, H. Midorikawa, S. Tamura and S. Arai, “Low Threshold Operation of Strain-Compensated GaInAsP/InP Multiple-Layered Wire Laser,” ｢GaInAsP/InP歪補償多層細線レーザの低しきい値動作｣ Nat. Conv. Res. of Japan Soc. Appl. Phys., 30p-N-11, Tokyo, Mar. 2000.

 

New Types of Semiconductor Lasers for Photonic Integration

 

Journal Papers

 

1.       M. Madhan Raj, S. Toyoshima and S. Arai, “Multiple Micro-Cavity Laser with Benzocyclobutene/Semiconductor High Reflective Mirrors Fabricated by CH4/H2-Reactive Ion Etching,” Jpn. J. Appl. Phys., vol.38, pp.L811-L814, 1999.

2.       M. Madhan Raj, J. Wiedmann, Y. Saka, H. Yasumoto and S. Arai, “1.5 mm Wavelength DBR Lasers Consisting of 3l/4-Semiconductor and 3l/4-Groove Buried with Benzocyclobutene,” Elec. Lett., vol.35, pp.1335-1337, 1999.

3.       M. Madhan Raj, Y. Saka, J. Wiedmann, H. Yasumoto and S. Arai, “Continuous Wave Operation of 1.55 mm GaInAsP/InP Laser with Semiconductor /Benzocyclobutene Distributed Bragg Reflector,” Jpn. J. Appl. Phys., vol.38, pp.L1240-L1242, 1999.

 

International Conferences

 

1.       M. Madhan Raj, S. Toyoshima and S. Arai, “Multiple Micro-cavity Laser with l/4-Wide Deep Grooves Buried with Benzocyclobutene,” The 11th Int. Conf. on Indium Phosphide and Related Materials (IPRM'99), TuB1-3, pp.207-210, Davos (Switzerland), May 1999

2.       M. Madhan Raj, J. Wiedmann, Y. Saka, H. Yasumoto, and S. Arai, “High Reflectivity Laser Facets by Deeply Etched DBR Buried with Benzocyclobutene,” The 11th Int. Conf. on Indium Phosphide and Related Materials (IPRM'99), PDA-3 (Post Deadline Papers), pp.10-11, Davos (Switzerland), May 1999.

3.       M. Madhan Raj, J. Wiedmann, Y. Saka, K. Ebihara, K. Matsui and S. Arai, “Highly Uniform 1.55mm Wavelength Lasers with Deeply Etched Semiconductor/ Benzocyclobutene DBR,” to be presented at the 12th Int. Conf. on Indium Phosphide and Related Materials (IPRM'00), WP2, Williamsburg (US), May 2000.

4.       M. Madhan Raj, S. Toyoshima and S. Arai, ”Multiple Microcavity Laser with Benzocyclobutene(BCB)/Semiconductor High Reflective Mirrors Fabricated by CH4/H2-RIE Dry Etching,” 16th Semiconductor Laser Symposium, 5, pp.5, Yokohama, March 1999.

5.       M. Madhan RAJ, Y. Saka, J. Wiedmann, S. Tamura and S. Arai, ”Low Threshold 1.5 mm Wavelength GaInAsP/InP Lasers with Semiconductor/Benzocyclobutene DBR Structure”, International Symposium on Ultra-Parallel Optoelectronics, P7, pp.97-98, Kawasaki (Japan), February 2000.

 

Domestic Conferences

 

1.       M. Madhan Raj, S. Toyoshima, A. Matsutani, M. Oyake, Y. Saka and S. Arai, “Measurement of CH4/H2-RIE Etched Mirror Roughness and Its Application to Semiconductor Lasers,” 「CH4/H2-RIEエッチトミラーのラフネス測定と半導体レーザへの応用」 Nat. Conv. Res. of Japan Society of Applied Phys., (28p-ZC-11), Tokyo, March 1999.

2.       S. Toyoshima, M. Madhan Raj, M. Oyake and S. Arai, ”Multiple Microcavity Laser with BCB/Semiconductor Reflectors by CH4/H2-RIE Dry Etching,” 「CH4/H2ドライエッチングを用いたBCB/半導体反射鏡を有する多重極微共振器レーザ」 Nat. Conv. Res. of Japan Society of Applied Phys., (28p-B-4), Tokyo, March 1999.

3.       Y. Saka, M. Madhan Raj, J. Wiedmann, H. Yasumoto and S. Arai, ”Room Temperature CW Operation of 1.54mm DBR Laser with BCB /Semiconductor Reflectors,” 「BCB/半導体反射鏡を有する1.54mmDBRレーザの室温CW動作」Nat. Conv. Res. of Japan Society of Applied Phys., (3a-ZE-40), Kobe, September 1999.

4.       J. Wiedmann, M. Madhan Raj, Y. Saka, H. Yasumoto and S. Arai, ”Evaluation of Reflectivity of Deeply Etched Semiconductor/BCB DBR Structure Lasers,” ” 「半導体/BCB DBR構造レーザーの反射率評価」Nat. Conv. Res. of Japan Society of Applied Phys., (3a-ZE-41), Kobe, September 1999.

5.       M. Madhan Raj, Y. Saka, K. Ebihara and S. Arai, “Low Threshold and High Efficiency Operation of 1.5mm Wavelength Semiconductor/BCB DBR Lasers,” 「1.5mm波長帯半導体/BCB DBRレーザの低しきい値・高効率動作」Nat. Conv. Res. of Japan Society of Applied Phys., (30p-N-8), Tokyo, March 2000.

6.       J. Wiedmann, M. Madhan Raj, Y. Saka, S. Tamura and S. Arai, “Single-Mode Operation of Deeply Etched DBR Lasers with Multiple-Cavities,” 「多重共振器を有するDBRレーザの単一波長動作」Nat. Conv. Res. of Japan Society of Applied Phys., (30p-N-9), Tokyo, March 2000.

7.       Y. Saka, K. Ebihara, M. Madhan Raj, J. Wiedmann and S. Arai, “Double Sided DBR Laser with BCB/Semiconductor Bragg Reflector,” 「両端にBCB/半導体反射鏡を有するDBRレーザ」Nat. Conv. Res. of Japan Society of Applied Phys., (30p-N-10), Tokyo, March 2000.

 

 

Quantum Coherent Electron Devices

 

Journal Papers

 

1.         N. Machida and K. Furuya, “Analysis of Phase-Breaking Effects in Triple-Barrier Resonant-Tunneling Diodes”, Jpn. J. Appl. Phys., Vol. 38, Part 1, No. 7A, pp.4017-4020, 1999.

2.         N. Machida and K. Furuya, “Analysis of Electron Incoherence Effects in Solid-State Biprism Devices”, Physica B, Vol. 272, pp.82-84, 1999.

3.         L. E. Wernersson, M. Suhara, N .Carlsson, K. Furuya, B. Gustafson, A. Litwin, L. Samuelson and W. Seifert, “Lateral Confinement in a Resonant Tunneling Transistor with a Buried Metallic Gate”, Appl. Phys. Lett., vol.74, no.2,  pp.311-313, 1999.

4.         M. Suhara, L. E. Wernersson, B. Gustafson, N .Carlsson, W. Seifert, A. Gustafson, J. O. Malm, A. Litwin, L. Samuelson and K. Furuya, “Gated Tunneling Structures with Buried Tungsten Grating Adjacent to Semiconductor Heterostructures”,  Jpn.J.Appl.Phys., Vol. 38, No. 6A, pp.3466-3469, 1999.

5.         Y. Miyamoto, H. Tobita, K. Oshima, and K. Furuya, "Barrier Thickness Dependence of Peak Current Density in GaInAs/AlAs/InP Resonant Tunneling Diodes by MOVPE," Solid-State Electronics, vol.43, pp.1395-1398, 1999.

6.         N. Kikegawa, B. Y. Zhang, Y. Ikeda, N. Sakai, K. Furuya, M. Asada, M. Wanatabe   and W. Saito, “Shortening of Detection Time for Observation of Hot Electron Spatial Distribution by Scanning Hot Electron Microscopy”, Jpn. J. Appl. Phys., Vol. 38, Part 1, No. 4A, pp.2108-2113,1999.

7.         B. Y. Zhang, Y. Ikeda, K. Furuya and N. Kikegawa, “Comparison between Fermi-Dirac and Boltzmann Methods for Band-bending Calculations of Si/CaF2/Au Hot Electron Emitter”, Jpn. J. Appl. Phys., Vol. 38, Part 1, No. 4A, pp.1905-1908,1999.

8.         B. Y. Zhang, K. Furuya, Y. Ikeda and N. Kikegawa, “Design and Experimental Characteristics of n-Si/CaF2/Au Hot Electron Emitter for Use in Scanning Hot Electron Microscopy”, Jpn. J. Appl. Phys., Vol. 38, Part 1, No. 8, pp.4887-4892, 1999.

9.         B. Y. Zhang, K. Furuya, Y. Ikeda, N. Kikegawa, M. Watanabe and T. Maruyama,  “Theoretical and Experimental Characterizations of Hot Electron Emission of n-Si/CaF2/Au Emitter Used in Hot Electron Detection Experiment”, Physica B, Vol. 272, pp.425-427, 1999.

 

 

 

International Conferences

 

1.         N. Machida and K. Furuya, “Analysis of Electron Coherence Effects in Solid-State Biprism Devices”, The 11th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-11), MoP-21, p 57, Kyoto, Japan, July 19-23, 1999.

2.         B. Gustafson, M. Suhara, K. Furuya, L. Samuelson, W. Seifert, and L. E. Wernersson, “Lateral Quantum Confinement in Selectively Grown Resonant Tunneling Transistor with an Embedded Gate”, The 9th International Conference on Modulated Semiconductor Structures (MSS9), G09, p128, Fukuoka, Japan, July 12-16, 1999.

3.         M. Suhara, L. –E. Wernersson, B. Gustafson, W. Seifert, L. Samuelson, and K. Furuya, “A Study of the Regrown Semiconductor Interface Including Patterned Metal Using Resonant Tunneling Structures Fabricated in the Overgrowth Process”, 7th International Conference on the Formation of Semiconductor Interfaces (ICFSI7), 0Fr02, Goethenberg, June, 1999.

4.         B. Y. Zhang, Y. Ikeda, Y. Miyamoto, K. Furuya, and N. Kikegawa, “A Versatile Hot Electron Emitter of InGaAs/AlAs Heterostructure with Wide Energy Range at High Current Density”, The 9th International Conference on Modulated Semiconductor Structures (MSS9), N13, p279, Fukuoka, Japan, July 12-16, 1999.

5.         B. Y. Zhang, K. Furuya, Y. Ikeda, N. Kikegawa, M. Watanabe and T. Maruyama, “Theoretical and Experimental Characterizations of Hot Electron Emission of n-Si/CaF2/Au Emitter Used in Hot Electron Detection Experiment”, The 11th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-11), ThP-18, p182, Kyoto, Japan, July 19-23, 1999.

 

Meeting Report

 

1.         M. Suhara, L. E. Wernersson, B. Gustafson, W. Seifert, L. Samuelson and K. Furuya, “Control of Resonant Tunneling Current due to Buried Fine Metal Adjacent to Semiconductor Heterostructures,” 「半導体ヘテロ接合に隣接した埋め込み微細金属による共鳴トンネル電流の制御」Technical Report of IEICE, ED99-9, pp.53-58, 1999.

 

Domestic Conferences

 

1.         N. Machida, K. Furuya and T. Konishi, “Design for Solid-State Biprism: Proposal of a Detection Method for Electron Interference Fringes”, 「固体バイプリズムの設計：電子波干渉縞検出法の提案」, Nat. Conv. Res. of Japan Soc. Appl. Phys., 28p-Y-4, Chiba, Mar. 1999.

2.         T. Konishi, N. Machdia and K. Furuya, “Proposal for a Solid-State Lens for Electron Wave with Fine-Metal Wires Buried in Semiconductors", 「半導体中埋め込み金属細線を用いた固体中電子波レンズの提案」, Nat. Conv. Rec. of Japan Soc. Appl. Phys., 2a-P4-6, Kobe, Sep. 1999.

3.         N. Machida, M. Kurahashi and K. Furuya, "Device Design for Solid-State Biprism: Proposal for a Structure with p-type Semiconductor/W Junction", 「固体バイプリズムの設計：p型半導体/W接合を用いたデバイス構造の提案」, Nat. Conv. Rec. of Japan Soc. Appl. Phys., 2a-P4-7, Kobe, Sep. 1999.

4.         B. Y. Zhang, Y. Ikeda, N. Kikegawa and K. Furuya, “Quantum Mechanical Effect on Potential Barrier Height and Transmission Probability in n+-Si/CaF2/Au Hot Electron Emitter”, Nat. Conv. Res. of Japan Soc. Appl. Phys., 28a-Y-4, Noda, Mar. 1999.

5.         N. Sakai, N. Kikegawa, K. Furuya, B. Y. Zhang, Y. Ikeda, "Spatial Resolution of Scanning Hot Electron Microscope - 3D Potential Analysis", 「走査型ホットエレクトロン顕微鏡の分解能評価−3次元ポテンシャル解析−」, Nat. Conv. Rec. of Japan Soc. Appl. Phys., 29p-H-1, Noda, Mar. 1999.

6.         N. Kikegawa, B. Y. Zhang, Y. Ikeda, N. Sakai, K. Furuya, "Multipoint Detection toward Scanning Hot Electron Microscopy (SHEM)",「走査型ホットエレクトロン顕微鏡(SHEM)に向けた多点ホットエレクトロン測定」, Nat. Conv. Rec. of Japan Soc. Appl. Phys., 29p-H-2, Noda, Mar.1999.

7.         N. Sakai, B. Y. Zhang, S. Karasawa, K. Furuya, "Development of SHEM for Measurement of HE Spatial Distribution - Noise Characteristics ", 「HE空間分布測定に向けたSHEMの開発−ノイズ特性−」, Nat. Conv. Rec. of Japan Soc. Appl. Phys., 2p-ZK-8, Kobe, Sep.1999.

8.         M. Nagase, M. Shioyama, M.Suhara, Y.Miyamoto and K.Furuya, “Analysis of I-V Characteristics of Triple-Barrier Resonant Tunneling Diodes -Temperature Dependence-”, 「3重障壁共鳴トンネルダイオードの電流電圧特性解析‐温度依存性‐」, Nat. Conv. Res. of Japan Soc. Appl. Phys., 28a-Y-3, Noda, Mar. 1999.

9.         M. Suhara, L. E. Wernersson, B. Gustafson, W. Seifert, L. Samuelson and K. Furuya, “Control of Tunnel Current by Using a Buried Tungsten Grating,”, 「埋込みタングステン‐グレーティングを用いたトンネルバリアの制御」, Nat. Conv. Rec. of Japan Soc. Appl. Phys., 28a-Y-5, Noda, Mar. 1999.

10.     K. Sato, S. Karasawa, M. Suhara, Y. Miyamoto and K. Furuya, "Estimation of Transport Characteristics of Si Delta-Doping on InP Monolayer Steps Grown by OMVPE", 「OMVPE成長InP単原子ステップへのSiδドーピング層における導電特性の評価」, Nat. Conv. Rec. of Japan Soc. Appl. Phys., 28p-Y-14, Noda, Mar. 1999.

11.     M. Nagase and K.Furuya, "Estimation Accuracy of Resonant Energy Widths Using a Triple-Barrier Resonant Tunnling Diode", 「3重障壁共鳴トンネルダイオードを用いた共鳴準位幅の評価精度」, Nat. Conv. Rec. of Japan Soc. Appl. Phys., 1a-P2-12, Kobe, Sep.1999.

 

High-Speed Electron Devices Using Advanced Structures and Materials

 

Journal Papers

 

1.         W.Saitoh, A.Itoh, S.Yamagami, and M.Asada, "Analysis of Short-Channel　Schottky Source/Drain Metal-Oxide-Semiconductor Field-Effect Transistor on Silicon-on-Insulator Substrate and Demonstration of sub-50nm n-type　Devices with Metal Gate", Jpn. J. Appl. Phys., Vol. 38, No. 11, pp. 6226-6231, 1999.

2.         M.Tsutsui, M.Watanabe, and M.Asada: "Resonant  Tunneling Diodes in　Si/CaF2　Heterostructures Grown by Molecular Beam Epitaxy", Jpn. J. Appl. Phys., Vol. 38, No. 8B, pp. L920-L922, 1999.

3.         W.Saitoh, S.Yamagami, A.Itoh, and M.Asada, "35nm Metal Gate p-type Metal Oxide Semiconductor Field-Effect Transistor with PtSi Schottky Source/Drain on Separation by Implanted Oxygen Substrate", Jpn.J.Appl.Phys., Vol. 38, No. 6A, pp. L629-L631, 1999.

4.         Y.Oguma, N.Sashinaka, and M.Asada, "Terahertz Response with Gradual Change from Square-Law Detection to Photon-Assisted Tunneling in Triple-Barrier Resonant Tunneling Diodes", Jpn.J.Appl.Phys., Vol. 38, No. 7A, pp. L717-L719, 1999.

 

International Conference

 

1.         T. Arai, H. Tobita, Y. Harada, M. Suhara, Y. Miyamoto and K. Furuya, “Proposal of Buried Metal Heterojunction Bipolar Transistor and Fabrication of HBT with Buried Tungsten” International Conference on Indium Phosphide and Related Materials, TuA1-4, Davos (Switzerland), May 16-20, 1999.

2.         M.Asada, Y.Oguma, and N.Sashinaka, "Estimation of THz Gain due to Interwell Transition by the Measurement of Detection Properties of Triple-Barrier Resonant Tunneling Diodes" (Invited), Int. Conf. on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-11), MoB-1, Kyoto (July 1999).

3.         W.Saitoh, A.Itoh, S.Yamagami, and M.Asada, "Demonstration of sub 50nm Gate n-type Schottky Source/Drain MOSFETs", Int. Conf. on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-11), TuC-3, Kyoto (July 1999).

4.         M.Tsutsui, M.Watanabe and M.Asada, "Observation of Negative Differential Resistance in Si/CaF2 Resonant Tunneling Diodes", Silicon Nanoelectronics Workshop, S3-6, Kyoto (June 1999).

5.         Y.Oguma, N.Sashinaka, and M.Asada, "Observation of Gradual Change from Square-Law Detection to Photon-Assisted Tunneling in THz Response of Triple-Barrier Resonant Tunneling Diodes", Int. Conf. on Modulated Semiconductor Structures (MSS9), G03, Fukuoka (July 1999).

6.         W.Saitoh, S.Yamagami, A.Itoh, and M.Asada, "35nm metal gate SOI-p-MOS-FETs with PtSi Schottky Source/Drain", Annual Device Research Conference (DRC'99), II-A-6, Santa Barbara, CA/USA (June 1999).

 

Meeting Report

 

1.         W.Saitoh, S.Yamagami, A.Itoh and M.Asada, “Demonstration of sub 50nm Gate Schottky Source/Drain MOSFETs”, ｢SOI基板上サブ50nm金属ゲートSchottky Source/Drain MOSFET｣, Technical report of IEICE, ED99-26, Yamaguchi, April 1999.

2.         T. Arai, Y. Harada, H. Tobita, Y. Miyamoto and K. Furuya, “Fabrication of HBT with Buried Tungsten Mesh Used as a Collector Electrode” ｢埋め込みタングステンメッシュをコレクタ電極として使用したHBTの作製｣, Technical report of IEICE, ED99-196, Oct. 21, 1999.

 

Domestic Conferences

 

1.         W.Saitoh, S.Yamagami, A.Itoh and M.Asada, "35nm Metal Gate p-type Schottky MOSFET on SIMOX Substrate", 「SIMOX基板上 35nm金属ゲートp型 Schottky MOSFETの作製」, Nat. Conv. Rec. of Japan Soc. Appl. Phys., 30p-ZM-13, Noda Mar. 1999.

2.         A.Itoh, W.Saitoh, S.Yamagami and M.Asada, "Analysis of Short Channel Schottky MOSFET on SOI Substrate and Fabrication of n-type Devices", 「SOI基板上 短チャネルSchottky MOSFETの特性解析とn形素子の作製」, Nat. Conv. Rec. of Japan Soc. Appl. Phys., 30p-ZM-14, Noda Mar. 1999.

3.         Y.Oguma, N.Sashinaka, W.Saitoh and M.Asada, "Observation of THz Rectification of the Triple-Barrier Resonant Tunneling Diode", 「三重障壁共鳴トンネルダイオードにおけるTHz検波出力特性の観測」, Nat. Conv. Rec. of Japan Soc. Appl. Phys., 30a-Y-10, Noda Mar. 1999.

4.         T. Arai, H. Tobita, Y. Harada, M. Suhara, Y. Miyamoto and K. Furuya, “Fabrication of HBT with Buried Tungsten Mesh as Collector Electrode” ｢埋め込みタングステンメッシュをコレクタ電極として使用したHBTの作製｣ Nat. Conv. Rec. of The Japan Soc. Appl. Phys., 31a-P11-8, Noda Mar. 1999.

5.         M.Tsutsui, M.Watanabe and M.Asada, "Fabrication and Characteristics of Resonant Tunneling Diodes with Si/CaF2 Heterostructures", ｢Si/CaF2ヘテロ構造共鳴トンネルダイオードの作製と評価｣, Nat. Conv. Rec. of Japan Soc. Appl. Phys., 2p-ZL-9, Kobe Sep. 1999.

6.         M.Asada, Y.Oguma and N.Sashinaka, "Terahertz Gain Due to Interwell Transition Estimated by the Detection Properties of Resonant Tunneling Diodes", ｢共鳴トンネルダイオードの検波特性から見積もった隣接量子井戸間遷移によるテラヘルツ利得｣, Nat. Conv. Rec. of Japan Soc. Appl. Phys., 1a-p2-6, Kobe Sep. 1999.

7.         Y.Iketani, M.Watanabe and M.Asada, "Ion Beam Epitaxial Growth of CaF2 on Si(111) 1°off Substrate with Controlled Terrace-Width", ｢テラス幅を制御したSi(111)1度off基板上へのCaF2イオンビームエピタキシャル成長｣, Nat. Conv. Rec. of Japan Soc. Appl. Phys., 1p-T-4, Kobe Sep. 1999.

8.         Y. Harada, T. Arai, S. Yamagami, Y. Miyamoto and K. Furuya, “Fabrication and DC Characteristics of GaInAs/InP-Based HBT with 20 nm Thick InP Emitter Layer” ｢エミッタ層厚20nmのGaInAs/InP系HBTの作製と直流動作特性｣ Nat. Conv. Rec. of The Japan Soc. Appl. Phys., 1a-ZF-8, Kobe Sept. 1999.

 

Light Emitting Devices Using Advanced Structures and Materials

 

Journal of Papers

 

1.       M. Watanabe, Y. Aoki, W. Saitoh and M. Tsuganezawa, "Negative Differential Resistance of CdF2/CaF2 Resonant Tunneling Diode on Si(111) Grown by Partially Ionized Beam Epitaxy," Jpn. J. Appl. Phys., 38, 2A, pp.L116-L118, 1999.

2.       M. Watanabe, T. Maruyama, S. Ikeda, "Light Emission from Si Nanocrystals Embedded in CaF2 Epilayers on Si(111): Effect of Rapid Thermal Annealing," J. Luminescence, 80, pp.253-256, 1999.

3.       T. Maruyama, N. Nakamura, and M. Watanabe, "Visible Electroluminescence from Nanocrystalline Silicon Embedded in Single-Crystalline CaF2/Si(111) with Rapid Thermal Anneal," Jpn. J. Appl. Phys., 38, 8B, pp. L904-L906, 1999.

4.       T. Maruyama, N. Nakamura, and M. Watanabe, "Improvement of the Visible Electroluminescence from Nanocrystalline Silicon Embedded in CaF2 on Si(111) Substrate Prepared by Rapid Thermal Annealling," Jpn. J. Appl. Phys., 39, 4B, 2000.

 

International Conferences

 

1.           M. Watanabe, Y. Maeda, S. Okano, “Epitaxial Growth and UV Luminescence of CaF2/ZnO/CaF2 Heterostructures on Si(111),” 41st Electronic Materials Conference, T5, pp.51-51, Santa Barbara, U.S.A., June 30-July 2, 1999.

2.           T. Maruyama, N. Nakamura, and M. Watanabe, “Visible Electroluninescence from Silicon Nanocrystals Embeded in CaF2 Epilayers on Si(111) with Rapid Thermal Anneal,” The 1999 International Conference on Solid State Devices and Materials, D-11-1, pp.426-427, Tokyo, Sept. 21-24, 1999.

 

Meeting Report

 

1.         M. Watanabe, M. Tsutsui, and M. Asada, “Resonant Tunneling Diode Silicon Substrate Using Si-CaF2 and CdF2-CaF2 Heterostructures,” 「Si-CaF2及びCdF2-CaF2ヘテロ接合を用いたシリコン基板上共鳴トンネルダイオード」, Technical report of IEICE, ED99-316, Sapporo, Feb. 2000.

 

Domestic Conferences

 

1.                  S. Okano, Y. Maeda, and M. Watanabe, "UV Electroluminescence from CaF2/ZnO/CaF2 Heteroepitaxial Structure on Si(111) Substrate," 「Si(111)基板上CaF2/ZnO/CaF2ヘテロエピタキシャル構造からのEL紫外線発光」The 46th Spring Meeting of The Jpn. Soc. Of Appl. Phys. And Related Societies, 28a-ZA-9, Chiba, March , 1999.

2.                  N. Nakamura, T. Maruyama, and M. Watanabe, "EL Spectra from Nano-Crystalline Si Embedded in CaF2/Si(111) Thin Film," 「CaF2/Si(111)薄膜中Si微結晶からのEL発光」The 60th Autumn Meeting of The Jpn. Soc. Of Appl. Phys, 3p-ZN-15, Kobe, Sept. , 1999.

3.                  M. Tsutsui, M. Watanabe, and M. Asada, "Fabrication and Characteristics of Resonant Tunneling Diodes with Si/CaF2 Heterostructures," 「Si/CaF2ヘテロ構造共鳴トンネルダイオードの作製と評価」The 60th Autumn Meeting of The Jpn. Soc. Of Appl. Phys, 2p-ZL-9, Kobe, Sept. , 1999.

4.                  Y. Iketani, M. Watanabe, and M. Asada, "Ion Beam Epitaxial Growth of CaF2 on Si(111) 1degree Substrate with Controlled Terrace-Width," 「テラス幅を制御したSi(111)1゜off 基板上へのCaF2イオンビームエピタキシャル成長」The 60th Autumn Meeting of The Jpn. Soc. Of Appl. Phys, 1p-T-4, Kobe, Sept. , 1999.

 

Processing for Nanometer Structures

 

Journal Papers

 

1.         N. Nunoya, M. Nakamura, M. Tamura and S. Arai, “Characterization of Etching Damage in Cl2/H2-Reactive-Ion-Etching of GaInAs/InP Heterostructure,” Jpn. J. Appl. Phys., vol.38, no.12A, pp.6942-6946, 1999.

 

International Conferences

 

1.              Y. Miyamoto, A. Kokubo, H. Oguchi, M. Kurahashi and K. Furuya, “Anomalous Current in 50nm width Au/Cr/GaInAs Electrode for Electoron Wave Interference Device”, Third International Symposium on Control of Semiconductor Interfaces, A5-6, Karuizawa (Japan), Oct. 25-29, 1999.

2.              T. Arai, H. Tobita, Y. Harada, M. Suhara, Y. Miyamoto and K. Furuya, “Toward Nano-Metal Buried in InP Structure - 20 nm Wide Tungsten Wire and InP Buried Growth of Tungsten -”, The 9th International Conference on Modulated Semiconductor Structures, D21, Fukuoka (Japan), July 12-16, 1999.

 

Domestic Conferences

 

1.       M. Nakamura, N. Nunoya, I. Fukushi, S. Tamura and S. Arai, “CH4/H2 Dry Etching/ OMVPE Regrowth for GaInAsP/InP Low-Dimensional Quantum-Well Structures,” ｢GaInAsP/InP 低次元量子井戸構造のためのCH4/H2ドライエッチング／埋め込み再成長｣ Nat. Conv. Res. of Japan Soc. Appl. Phys., 28p-ZC-9, Digest III -p.1189, Noda, Mar. 1999.

2.       H. Oguchi, K. Sato, Y. Miyamoto and K. Furuya, “Contact Characteristics in 80nm Period Electrode on GaInAs for Electron Wave Interference Device”, ｢電子波干渉素子用 GaInAs上80nm周期電極の特性｣, Nat. Conv. Rec. of Japan Soc. Appl. Phys., 2a-P4-5, Kobe, Sep. 1999.