Semiconductor materials and optical devicesfor future optoelectronic systems Miyamoto Lab. http://vcsel-www.pi.titech.ac.jp/index-e.html

Objective The purpose of this study is to develop future optoelectronic systems by investigation of novel semiconductor materials, quantum structures and device structures for high performance semiconductor optical devices. The target is new parallel lightwave systems by these optical devices. Research Field Optoelectronics, Semiconductor laser, semiconductor epitaxial growth Research Theme We are developing novel semiconductor materials for high performance laser devices. The GaInNAs shown in Fig. 1 can be grown on GaAs and it can emit at wavelength over 1.0mm. It is attractive for long wavelength vertical cavity surface emitting lasers (VCSELs) because of applicability of matured VCSEL technologies. The GaInNAs is also expected to have a good temperature characteristic due to its material property. The GaInNAs is grown by metalorganic vapor phase epitaxy (MOCVD) and molecular beam epitaxy (MBE). The lasing operations from 1.2mm to 1.4mm of wavelengths have been realized. High performance long wavelength VCSEL is the next target and GaInNAs self-organized quantum dots as shown in Fig. 2 are investigated for the future active material.

Fig. 1 Bandgap vs. lattice constant of GaInNAs Fig.2 GaInNAs Quantum Dot