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Electron
transport properties of graphene with charged impurities and vacancy defects |
Y. Kudo, K. Takai, and T. Enoki |
J. Mater.
Res. |
vol.28,
pp1097-1104 (2013) |
—mŽ |
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AA191003 |
24 |
Bias-Dependent
Radio Frequency Performance for 40 nm InAs High-Electron-Mobility Transistor
with a Cutoff Frequency Higher than 600 GHz |
Faiz
Fatah, Chien-I Kuo, Heng-Tung Hsu, Che-Yang Chiang, Ching-Yi Hsu, Yasuyuki
Miyamoto, and Edward Yi Chang |
Jpn.
J. Appl. Phys. |
vol.51,no.11,
110203 (2012) |
—mŽ |
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|
AA191013 |
24 |
InAs
Thin-Channel High-Electron-Mobility Transistors with Very High Current-Gain
Cutoff Frequency for Emerging Submillimeter-Wave Applications |
Edward-Yi
Chang, Chien-I Kuo, Heng-Tung Hsu, Che-Yang Chiang, and Y. Miyamoto |
Appl.
Phys. Express |
vol.6,
no.3, 034001 (2013) |
—mŽ |
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AA191040 |
24 |
Focusing
Effect Measurements of Artificial Dielectric Lens with Metal Rectangular
Chips for Terahertz Wave Band |
Y.
Takebayashi, T. Konno, S. Shimada, F. Miyamaru, J. C. Young, H.,Kitahara, K. Takano, M.
Hangyo, and Takehito Suzuki |
Applied
Physics A. |
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24 |
Performance
Evaluation of InGaSb/AlSb P-Channel High-Hole-Mobility Transistor Faricated
Using BCl3 Dry Etching |
Chia-Hui
Yu, Heng-Tung Hsu, Che-Yang Chiang, Chien-I Kuo, Yasuyuki Miyamoto, and
Edward Yi Chang |
Jpn.
J. Appl. Phys. |
vol.52,no.2,
020203 (2013) |
—mŽ |
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24 |
Experimental
Study of Two-Terminal Resistive Random Access Memory Realized in Mono- and
Multilayer Exfoliated Graphene Nanoribbons |
Aya
Shindome, Yu Doioka, Nobuyasu Beppu, Shunri Oda, and Ken Uchida |
Jpn.
J. Appl. Phys. 52 (2013) 04CN05 |
vol.52,
04CN05 (2013) |
—mŽ |
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