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24 Electron transport properties of graphene with charged impurities and vacancy defects  Y. Kudo, K. Takai, and T. Enoki J. Mater. Res.  vol.28, pp1097-1104 (2013) —mƒˆƒEŽƒV AA191003
24 Bias-Dependent Radio Frequency Performance for 40 nm InAs High-Electron-Mobility Transistor with a Cutoff Frequency Higher than 600 GHz Faiz Fatah, Chien-I Kuo, Heng-Tung Hsu, Che-Yang Chiang, Ching-Yi Hsu, Yasuyuki Miyamoto, and Edward Yi Chang Jpn. J. Appl. Phys.  vol.51,no.11, 110203 (2012)  —mƒˆƒEŽƒV AA191013
24 InAs Thin-Channel High-Electron-Mobility Transistors with Very High Current-Gain Cutoff Frequency for Emerging Submillimeter-Wave Applications Edward-Yi Chang, Chien-I Kuo, Heng-Tung Hsu, Che-Yang Chiang, and Y. Miyamoto Appl. Phys. Express  vol.6, no.3, 034001 (2013) —mƒˆƒEŽƒV AA191040
24 Focusing Effect Measurements of Artificial Dielectric Lens with Metal Rectangular Chips for Terahertz Wave Band Y. Takebayashi, T. Konno, S. Shimada, F. Miyamaru, J. C.  Young, H.,Kitahara, K. Takano, M. Hangyo, and Takehito Suzuki Applied Physics A. “ÁW† ¸“Ç’† —mƒˆƒEŽƒV @
24 Performance Evaluation of InGaSb/AlSb P-Channel High-Hole-Mobility Transistor Faricated Using BCl3 Dry Etching Chia-Hui Yu, Heng-Tung Hsu, Che-Yang Chiang, Chien-I Kuo, Yasuyuki Miyamoto, and Edward Yi Chang Jpn. J. Appl. Phys.  vol.52,no.2, 020203 (2013)  —mƒˆƒEŽƒV @
24 Experimental Study of Two-Terminal Resistive Random Access Memory Realized in Mono- and Multilayer Exfoliated Graphene Nanoribbons Aya Shindome, Yu Doioka, Nobuyasu Beppu, Shunri Oda, and Ken Uchida Jpn. J. Appl. Phys. 52 (2013) 04CN05 vol.52, 04CN05 (2013) —mƒˆƒEŽƒV @