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Home > Symposia > 5th International Symposium on Quantum Effect Electronics, October 20, 1998
Ferrite Conference Hall, Centennial Memorial Building, Tokyo Institute of Technology
Program
10:00-10:10 Opening address   K. Furuya    
10:10-10:35 Nano fabrication of III-V compound semiconductors by AFM-based surface oxidation process   *Y. Matsuzaki, K. Yuasa, A. Yamada and M. Konagai    
10:35-11:00 Dielectric constant of TICS/H2 CVD SiO2 films   S. Makino, A. Fujimoto and O. Sugiura    
11:00-11:25 Excimer-laser produced ultra-large grain growth technology for Si thin-films   *C.-H. Oh and M. Matsumura    
11:25-11:50 Grating-loaded NLDC with GaInAsP/InP as an all-optical switching device   K. Nakatsuhara, T. Mizumoto, *S. Hossain , S. H. Jeong and Y. Tsukishima    
11:50-13:00 LUNCH        
13:00-13:35 Correlation between electron mobility and structural property in MOCVD grown GaN   C. -H. Hong, K. S. Kim, K. J. Lee, C. S. Oh, G. M. Yangm K. Y. Lim and H. J. Lee Chonbuk National University Invited
13:35-14:10 Stress relaxation in Ga0.22In0.78As0.80P0.20 quantum wires on InP investigated by high-resolution x-ray diffratometry   B. Jenichen, G. Paris, *H. T. Grahn, D. Luebbert, T. Baumbach, T. Kojima, S. Arai and A. Mazuelas Paul Drude Institute and Tokyo Institute of Technology Invited
14:10-14:35 Fabrication of GaInAsP/InP quantum wire laser and evaluation of its optical gain characteristics   *T. Kojima, S. Tanaka, H. Yasumoto, S. Tamura, N. Nunoya and S. Arai    
14:35-15:00 Growth of GaInNAs quantum wells and its optical properties   *T. Miyamoto, D. Schlenker, T. Kageyama, F. Koyama and K. Iga    
15:00-15:25 Negative differential resistance of CdF2/CaF2 resonant tunneling diode on Si(111) grown by partially ionized beam epitaxy   *M. Watanabe, M. Tsuganezawa, t. Funayama and D. Kuruma    
15:25-15:35 BREAK        
15:35-16:10 Possible approach for quantum doping of silicon quantum dots   Sergei Vyshenski Moscow State University Invited
16:10-16:35 Single electron tunneling devices based on Si quantum dots   *A. Dutta, Y. Hayafune, S.P. Lee, S. Hara, K. Nishiguchi, S. Hatatani and S. Oda    
16:35-17:00 Fabrication techniques of heterojunction bipolar transistor with buried collector electrode   *T. Arai, W. Zhang, H. Tobita, Y. Harada, M. Suhara, Y. Miyamoto and K. Furuya    
17:00-17:25 Noise and detection characteristics of scanning hot electron microscope   *N. Kikegawa, B. Y. Zhang, Y. Ikeda, N. Sakai and K. Furuya    
17:25-17:50 Structural analysis of SiGeC alloys and growth of Si films by hot-wire cell method   *A. Yamada, M. Ichikawa, N. Miyazono, J. Takeshita and M. Konagai    
17:50-18:15 Fabrication and characteristics of sub 1micrometer Schottky MOS-FETs on SIMOX substrate   *W. Saitoh, S. Yamagami, A. Itoh and M. Asada    
18:15-18:25 Closing remarks   M. Konagai