Ferrite Conference
Hall, Centennial Memorial Building, Tokyo Institute of Technology |
Program |
10:00-10:10 |
Opening address |
|
K. Furuya |
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10:10-10:35 |
Nano fabrication of III-V compound
semiconductors by AFM-based surface oxidation process |
|
*Y. Matsuzaki, K. Yuasa, A. Yamada
and M. Konagai |
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10:35-11:00 |
Dielectric constant of TICS/H2
CVD SiO2 films |
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S. Makino, A. Fujimoto and O. Sugiura |
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11:00-11:25 |
Excimer-laser produced ultra-large
grain growth technology for Si thin-films |
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*C.-H. Oh and M. Matsumura |
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11:25-11:50 |
Grating-loaded NLDC with GaInAsP/InP
as an all-optical switching device |
|
K. Nakatsuhara, T. Mizumoto, *S.
Hossain , S. H. Jeong and Y. Tsukishima |
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11:50-13:00 |
LUNCH |
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13:00-13:35 |
Correlation between electron mobility
and structural property in MOCVD grown GaN |
|
C. -H. Hong, K. S. Kim, K. J. Lee,
C. S. Oh, G. M. Yangm K. Y. Lim and H. J. Lee |
Chonbuk National University |
Invited |
13:35-14:10 |
Stress relaxation in Ga0.22In0.78As0.80P0.20
quantum wires on InP investigated by high-resolution x-ray diffratometry
|
|
B. Jenichen, G. Paris, *H. T. Grahn,
D. Luebbert, T. Baumbach, T. Kojima, S. Arai and A. Mazuelas |
Paul Drude Institute and Tokyo Institute
of Technology |
Invited |
14:10-14:35 |
Fabrication of GaInAsP/InP quantum
wire laser and evaluation of its optical gain characteristics |
|
*T. Kojima, S. Tanaka, H. Yasumoto,
S. Tamura, N. Nunoya and S. Arai |
|
|
14:35-15:00 |
Growth of GaInNAs quantum wells
and its optical properties |
|
*T. Miyamoto, D. Schlenker, T.
Kageyama, F. Koyama and K. Iga |
|
|
15:00-15:25 |
Negative differential resistance
of CdF2/CaF2 resonant tunneling diode on Si(111) grown by partially
ionized beam epitaxy |
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*M. Watanabe, M. Tsuganezawa, t.
Funayama and D. Kuruma |
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15:25-15:35 |
BREAK |
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15:35-16:10 |
Possible approach for quantum doping
of silicon quantum dots |
|
Sergei Vyshenski |
Moscow State University |
Invited |
16:10-16:35 |
Single electron tunneling devices
based on Si quantum dots |
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*A. Dutta, Y. Hayafune, S.P. Lee,
S. Hara, K. Nishiguchi, S. Hatatani and S. Oda |
|
|
16:35-17:00 |
Fabrication techniques of heterojunction
bipolar transistor with buried collector electrode |
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*T. Arai, W. Zhang, H. Tobita,
Y. Harada, M. Suhara, Y. Miyamoto and K. Furuya |
|
|
17:00-17:25 |
Noise and detection characteristics
of scanning hot electron microscope |
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*N. Kikegawa, B. Y. Zhang, Y. Ikeda,
N. Sakai and K. Furuya |
|
|
17:25-17:50 |
Structural analysis of SiGeC alloys
and growth of Si films by hot-wire cell method |
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*A. Yamada, M. Ichikawa, N. Miyazono,
J. Takeshita and M. Konagai |
|
|
17:50-18:15 |
Fabrication and characteristics
of sub 1micrometer Schottky MOS-FETs on SIMOX substrate |
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*W. Saitoh, S. Yamagami, A. Itoh
and M. Asada |
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18:15-18:25 |
Closing remarks |
|
M. Konagai |
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