トップ > 講演 > 過去の講演   日時 場所 講演者 講演題目 2002.10.03 Cambridge University, Engineering Department David F. Moore Micromachining silicon for devices 2002.2.12 Bell Laboratories, Lucent Tech. and TIT Raymond T. Tung Formation of band-offset and Schottky barrier height at semiconductor interfaces 2002.2.6 NASA Jet Propulsion Lab Gerhard Klimeck Nanoelectronic Modeling(NEMO):Moving from commercial grade 1-D simulation to prototype 3-D simulation 2001.11.7 Cambridge University, Engineering Department John Robertson Theoretical guidelines for high-k gate oxides 2001.10.31 IBM Research Division, T.J. Watson Research Center James H. Stathis Breakdown of Hyper-Thin SiO2 at Low Voltage 2001.9.18 Cambridge University, Engineering Department David Moore Microfabrication techniques applied in nanotechnology and biotechnology 2001.4.19 Tokyo Institute of Technology Bruce J. Hinds Chemistry of the Si/SiO2 Interface and Single Electron Memory from a Nano-Crystalline Si Floating Gate Node 2001.3.22 Indian Institute of Technology, Delhi K. P. Jain Raman and photoluminescence spectroscopy of Silicon nanostructures 2001.2.21 Indian Institute of Science S. A. Shivashankar MOCVD of thin films of metals and metal oxides 2000.12.11 Cambridge University, Engineering Department David Moore Applications of silicon micromachining technology 1999.4.2 Delft University of Technology Yuli V. Nazarov Current drag in capacitevly coupled Luttinger constrictions 1998.5.25 Paul Drude Institute and TIT E.Chilla Scanning Probe Methods on Oscillating Surfaces 1998.2.10 Lund University Lars-Erik Wernersson Buried W-Structures for Novel Nano-Electronic Devices 1997.12.8 Cambridge University, Engineering Department David Moore Micro Electro Mechanical Systems (MEMS) using Si 1997.11.28 Moscow State University and Delft University of Technology Arkadi A. Odintsov Transport of interacting electrons in modulated quantum wires and carbon nanotubes 1997.10.24 University of California, San Diego Charles W. Tu Growth and application of N-containing mixed group V compounds 1997.10.17 Toshiba Cambridge Laboratories Donald Arnone Quasi one and zero dimensional systems fabricated via epitaxial regrowth 1997.9.24 Royal Institute of Technology (KTH) Katharina Hieke Electron-waveguides with in-plane sidegates - basic results and deviceconcepts 1997.7.14 Cambridge University, Engineering Department W. I. Milne Tetrahedrally Bonded Amorphous Carbon 1997.3.21 Nanjin University Kunji Chen A luminescent Si and Ge quantum crystallites: Preparation and characterization 1997.2.1 New York State University at Stony Brook K. K. Likharev Two challenges to CMOS; Single electronics and RSFQ 1996.12.17 Wuerzburg University and TIT Bacher Nanometer-Patterning of II-VI Compounds -Basic Physics and Optoelectronic Applications 1996.10.9 Japan Science and Technology Corp. Sakigake 21 Gerhart Fasol Spin electronics and computer graphics of quantum devices 1996.9.27 Moscow State University and TIT Sergei Vyshenski Single electron devices and circuits 1996.7.15 Bell Laboratories, Lucent Tech. and TIT Reymond Tung Current issues in silicide formation for ULSI devices 1995.4.10 Cambridge University, Engineering Department David Moore Progress in High-Tc Superconducting devices 1995.3.17 Massachusetts Institute of Technology Marc Kastner The physics of the single-electron transistor