| Ferrite Conference
Hall, Centennial Memorial Building, Tokyo Institute of Technology |
| Program |
| 10:00-10:10 |
Opening address |
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| 10:10-10:35 |
Epitaxial Growth of GaSe by Molecular
Beam Epitaxy |
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*N. Kojima, M. Budiman, K. Sato,
A. Yamada, M. Konagai and K. Takahashi |
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| 10:35-11:00 |
Ultra Thin Film Growth of InSb
by MEE |
|
*S. Sunahara, H. Chibahara and
O. Sugiura |
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| 11:00-11:25 |
Atomic Layer Epitaxy of Germanium |
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*S. Sugahara, T. Kitamura, S. Imai
and M. Matsumura |
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| 11:25-11:50 |
MOCVD Growth of GaInSb on Gd3Ga5O12
Substrates |
|
M. Totoki, T. Mizumoto, T. Nakamura
and Y. Naito |
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| 11:50-13:20 |
LUNCH |
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| 13:20-13:50 |
Spontaneously Formed Multilayer
Structures of AlxGa1-xAs/AlyGa1-yAs Grown on (100) GaAs by MOCVD |
|
S. S. Cha, H. I. Jeon, Y. H. Lee,
K. Y. Lim, *E.-K. Suh and H. J. Lee |
Jeonbuk National University |
Invited |
| 13:50-14:15 |
Heavily Carbon-doped Base InGaP/GaAs,
InP/InGaAs HBTs Grown by MOMBE with TBP |
|
*J. Shirakashi, T. Azuma, F. Fukuchi,
M. Konagai and K. Takahashi |
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|
| 14:15-14:40 |
Ultra fine Fabrication Technique
for Hot Electron Interference/Diffraction Devices |
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*H. Hongo, J. Suzuki, Y. Miyamoto,
T. Tan, M. Funayama and K. Furuya |
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|
| 14:40-15:10 |
BREAK |
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| 15:10-15:35 |
Metal(CoSi2)/Insulator(CaF2) Resonant
Tunneling Transistor |
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*Y. Kohno, T. Suemasu, N. Suzuki,
W. Saitoh, M. Watanabe and M. Asada |
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|
| 15:35-16:00 |
GaInAs/GaInAsP/InP Wire Structures
Fabricated by Low-Energy Reactive-Ion Assisted Radical Etching |
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*M. Tamura, K. Shin, S. Tamura,
A. Ubukata and S. Arai |
|
|
| 16:00-16:25 |
Surface Morphology and Superconductivity
of YBaCuO Films Prepared by Atomic Layer MOCVD |
|
*S. Yamamoto and S. Oda |
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|
| 16:25-16:50 |
Optical Response of YBa2Cu3O7-delta |
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*K. Tanaka, M. Danerud, M. Ohtsu,
M. Sekine, M. Kawasaki and H. Koinuma |
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| 16:50-17:00 |
Closing remarks |
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