| Ferrite Conference
Hall, Centennial Memorial Building, Tokyo Institute of Technology |
| Program |
| 10:00-10:10 |
Opening address |
|
T. Moriizumi |
|
|
| 10:10-10:35 |
Heavily Carbon-Doped GaAs Grown
on Various Oriented GaAs Substrates by MOMBE |
|
*S. Hatatani and M. Konagai |
|
|
| 10:35-11:00 |
Epitaxial Growth of InSb (111)
Substrate |
|
T. Satoh, Y. Tsukamoto and *O.
Sugiura |
|
|
| 11:00-11:25 |
Atomic-Layer-Epitaxy of Silicon
and Germanium Using Atomic Hydrogen |
|
*S. Sugahara and M. Matsumura |
|
|
| 11:25-11:50 |
Current Issues in Silicide Formation
for ULSI devices |
|
R. Tung |
Bell Laboratory, Lucent Technology |
|
| 11:50-12:15 |
Address-Data Separation for All-Optical
Routing |
|
*K. H. Park, T. Mizumoto, A. Matsuura
and Y. Naito |
|
|
| 12:15-12:45 |
Excitonic Emission and Oxide Current
Aperture in Vertical-Cavity Laser Structure |
|
G. M. Yang, D. H. Lim, J. H. Kim,
Y.Lim and H.J.Lee |
Jeonbuk National University |
Invited |
| 12:45-13:45 |
LUNCH |
|
|
|
|
| 13:45-14:15 |
Fabrication of Semiconductor Quantum
Wire and Quantum Dot Structures Using Spontaneous Patterning During
Epitaxy |
|
K. H. Ploog |
Paul Drude Institute |
Invited |
| 14:15-14:40 |
Fabrication of Nano-Structures
Using EB-Lithography and Its Application to Long-Wavelength Quantum-Wire
Lasers |
|
*T. Kojima, M. Tamura, X. -Y. Jia,
S. Tamura and S. Arai |
|
|
| 14:40-15:05 |
Electron-Beam-Induced Deposition
of Carbonaceous Material and Its Applications to Microstructure Fabrication |
|
*N. Miura, H. Ishii, A. Yamada
and M. Konagai |
|
|
| 15:05-15:30 |
Visible Light Emission from Nanocrystalline
Silicon Embedded in CaF2 Layers on Si (111) |
|
*M. Watanabe, T. Matsunuma, T.
Maruyama and M. Asada |
|
|
| 15:35-15:50 |
BREAK |
|
|
|
|
| 15:50-16:15 |
Technology Trends for High-Temperature
Single- Electronics |
|
S. Vyshenski |
Moscow State University |
|
| 16:15-16:40 |
Fabrication of Silicon Quantum
Dots by Plasma Processing and Room-Temperature Single Electron Tunneling
Characteristics |
|
*A. Itoh, T. Ifuku, A. Dutta and
S. Oda |
|
|
| 16:40-17:05 |
Observation of Ballistic Electronics
in Solids by Scanning Probe Microscopy: Principle, Evidence and Projection |
|
*N. Kikegawa, D. Kobayashi, F.
Vazquez, N. Matsumoto, Y. Ikeda, K. Furuya and Y. Miyamoto |
|
|
| 17:05-17:30 |
Hot Electron Interference by 40nm-Pitch
Double Slit Buried in Semiconductor under Magnetic Field |
|
*H. Hongo, Y. Miyamoto, M. Suhara
and K. Furura |
|
|
| 17:30-17:55 |
A Possible Three-Terminal Amplifier
Device in the Terahertz Frequency Range Using Photon-Assisted Tunneling |
|
M. Asada |
|
|
| 17:55-18:00 |
Closing remarks |
|
M. Matsumura |
|
|
