| Ferrite Conference
Hall, Centennial Memorial Building, Tokyo Institute of Technology |
| Program |
| 10:00-10:10 |
Opening address |
|
K. Furuya |
|
|
| 10:10-10:35 |
MOMBE Growth of InGaP on (100)
and (411) A GaAs Substrates Using Tertiarybutylphosphine (TBP) |
|
*S. Hatatani, K. Yuasa and M. Konagai |
|
|
| 10:35-11:00 |
Application of PECVD SiO2 for Compound
Semiconductor Devices |
|
*O. Sugiura, T. Akiba and I. Idris |
|
|
| 11:00-11:25 |
Low-Temperature Sputter-Deposition
of Poly-Si Thin-Films --A New Technology of "System-on-Panel"-- |
|
*W.-C. Yeh and M. Matsumura |
|
|
| 11:25-11:50 |
Waveguide Optical Bitable Device
with a GaInAsP for All-Optical Set-Reset Operation |
|
*K. Nakatsuhara, T. Mizumoto, R.
Munakata, Y. Kigure and Y. Naito |
|
|
| 11:50-13:00 |
LUNCH |
|
|
|
|
| 13:00-13:35 |
Growth and Characterization of
3-C SiC Thin Film on Si Substrate |
|
Kee Suk Nahm |
Jeonbuk National University |
Invited |
| 13:35-14:10 |
Radiative and Nonrdiative Recombination
in GaN |
|
Oliver Brandt |
Paul Drude Institute |
Invited |
| 14:10-14:35 |
Fabrication of GaInAsP/InP Multiple-Quantum-Wire
Structure by Low-Damage ECR Dry Etching |
|
*M. Tamura, T. Ando, N. Nunoya,
S. Tamura, S. Arai and M. Nakamura |
|
|
| 14:35-15:00 |
Fabrication of Single-Electron
Transistors by Beam-Induced Reaction Processes |
|
*A. Yamada, N. Miura, T, Namaguchi
and M. Konagai |
|
|
| 15:00-15:25 |
CaF2/CdF2 Quantum Well Intersubband
Transition Lasers |
|
*M. Watanabe and Y. Aoki |
|
|
| 15:25-15:45 |
BREAK |
|
|
|
|
| 15:45-16:10 |
Active Probing of Single Electron
Effects in a Silicon Quantum Dots |
|
S. Vyshenski, A. Ohata, Y. Kinugasa,
Y. Hayafune, S. Hara, S. P. Leem K. Nishiguchi, A. Dutta and *S. Oda |
|
|
| 16:10-16:35 |
Electric Properties of Coplanar-type
High-Tc Superconducting Field-Effect Devices |
|
*S. Suzuki, H. Tobisaka and S.
Oda |
|
|
| 16:35-17:00 |
Miniaturization of GaInAs/InP heterojunction
Bipolar Transistors by electron beam lithography |
|
*Y. Miyamoto, H. Toda, T. Arai
and K.Furuya |
|
|
| 17:00-17:25 |
Fabrication and Characterization
of GaInAs/InP Resonant Tunneling Diodes toward the Estimation Phase
Coherent Length of Electron Wave |
|
*T. Oobo, M. Suhara, Y. Miyamoto
and K. Furuya |
|
|
| 17:25-17:50 |
Short Channel Tunneling Field Effect
Transistor Using CdF2/CaF2/CoSi2 Hetero structures on Si Substrate |
|
*W. Saitoh, K. Yamazaki, M. Tsutsui
and M. Asada |
|
|
| 17:50-18:00 |
Closing remarks |
|
M. Matsumura |
|
|
