| Ferrite Conference
Hall, Centennial Memorial Building, Tokyo Institute of Technology |
| Program |
| 10:00-10:10 |
Opening address |
|
M. Konagai |
|
|
| 10:10-10:45 |
Quantum computing based on superconducting
charge qubit |
 |
J. S. Tsai, Y. Nakamura, and Yu.
Pashkin |
NEC Fundamental Research Laboratories |
Invited |
| 10:45-11:10 |
Ballistic transport in Si vertical
transistors |
|
K. Nishiguchi and S. Oda |
|
|
| 11:10-11:35 |
Vertical MOSFET with PtSi Schottky
source and drain |
|
M. Tsutsui, M. Asada and T, Nagai |
|
|
| 11:35-12:00 |
Room-temperature negative differential
resistance with high peak-to-valley ratio(>100,000) of CaF2/CdF2
resonant tunneling diode on Si |
|
M. Watanabe, T. Funayama, T. Teraji
and N. Sakamaki |
|
|
| 12:00-13:00 |
LUNCH |
|
|
|
|
| 13:00-13:35 |
Escape-time model for the frequency
of current self-oscillations in semiconductor super lattices |
|
H. T. Grahn |
Paul Drude Institute, Germany |
Invited |
| 13:35-14:00 |
High performance operation of gain-matched
DFB lasers |
|
N. Nunoya, M. Morshed, S. Tamura
and S. Arai |
|
|
| 14:00-14:25 |
Excellent temperature characteristics
of GaIn(N)As lasers on GaAs |
|
T. Miyamoto, D. Schlenker, T. Kageyama,
S. Makino, M. Kawaguchi, T. Kondo, F. Koyama and K. Iga |
|
|
| 14:25-14:50 |
Reduction of base-collector capacitance
in GaInAs/InP heterojunction bipolar transistor by using InP buried
growth of tungsten |
|
Y. Miyamoto, T. Arai, Y. Harada,
S. Yamagami and K. Furuya |
|
|
| 14:50-15:15 |
Wafer bonding and its application
to integrated optical isolator |
|
T. Mizumoto, H. Yokoi, N. Shinjo,
M. Shimizu and S. Kuroda |
|
|
| 15:15-15:40 |
Phase breaking effect in resonant
tunneling characteristics - comparison between experiment and phase
correlation theory - |
|
M. Nagase, M. Kurahashi, N. Machida
and K. Furuya |
|
|
| 15:40-16:00 |
BREAK |
|
|
|
|
| 16:00-16:35 |
Highly efficient CdTe solar cells
investigated by cathodoluminescence spectroscopy |
|
U. Jahn, T. Okamoto, A. Yamada
and M. Konagai |
Paul Drude Institute and Tokyo Institute
of Technology |
Invited |
| 16:35-17:00 |
Anodization of p-GaAs by atomic
force microscopy(AFM) oxidation process with voltage modulation |
|
Y. Matsuzaki, S. Hasui, S. Kamada,
D. Sasaki, A. Yamada and M. Konagai |
|
|
| 17:00-17:25 |
Strained Si1-yCy thin films on
Si grown by chemical vapor deposition |
|
A. Yamada, K. Abe, T. Watahiki,
S. Yagi and M. Konagai |
|
|
| 17:25-17:50 |
Preparation of low-k porous SiO2/Organic
hybrid chemical vapor deposition |
|
A. Fujimoto and O. Sugiura |
|
|
| 17:50-18:15 |
A silica-based inter-metal insulator
with low dielectric constant and high thermal conductivity |
|
K. Usami, S. Sugahara, T. Kadoya
and M. Matsumura |
|
|
| 18:15-18:25 |
Closing remarks |
|
M. Matsumura |
|
|
