発表論文

  1. T. Okumura, T. Maruyama, M. Kanemaru, S. Sakamoto and S. Arai, "Single-mode operation of GaInAsP/InP-membrane distributed feedback (DFB) lasers bonded on silicon-on-insulator (SOI) substrate with rib-waveguide structure," Jpn. J. Appl. Phys., vol. 46, no. 48, pp. L1206 - L1208, Dec. 2007.

  2. H. Naitoh, S. Sakamoto, M. Ohtake, T. Okumura, T. Maruyama, N. Nishiyama and S. Arai, "GaInAsP/InP membrane BH-DFB laser with air-bridge structure," Jpn. J. Appl. Phys., vol. 46, no. 47, pp. L1158 - L1160, Nov. 2007.

  3. S. Sakamoto, H. Naitoh, M. Ohtake, Y. Nishimoto, T. Maruyama, N. Nishiyama and S. Arai, "85 ºC continuous-wave operation of GaInAsP/InP-membrane buried heterostructure distributed feedback lasers with polymer cladding Layer," Jpn. J. Appl. Phys., vol. 46, no. 47, pp. L1155 - L1157, Nov. 2007.

  4. D. Plumwongrot, Y. Nishimoto, S. M. Ullah, Y. Tamura, M. Kurokawa, T. Maruyama, N. Nishiyama and S. Arai, "Bragg wavelength detuning in GaInAsP/InP DFB lasers with wirelike active regions," Jpn. J. Appl. Phys., vol. 46, no. 45, pp. L1090 - L1092, Nov. 2007.

  5. H. Itoh, M. Yoshita, H. Akiyama, D. Plumwongrot, T. Maruyama and S. Arai, "Micro-photoluminescence characterizations of GaInAsP/InP single quantum wires fabricated by dry etching and regrowth," J. Appl. Phys., vol. 102, no. 9 pp. 093509-1-093509-5, Nov. 2007.

  6. S. Sakamoto, H. Naitoh, M. Ohtake, Y. Nishimoto, S. Tamura, T. Maruyama, N. Nishiyama and S. Arai, "Strongly index-coupled membrane BH-DFB lasers with surface corrugation grating," IEEE J. Sel. Topics Quantum. Electron., vol. 13, no. 5, pp. 1135-1141, Dec. 2007.

  7. Y. Nishimoto, H. Yagi, K. Miura, D. Plumwongrot, K. Ohira, T. Maruyama and S. Arai, "High T0 operation of 1590 nm GaInAsP/InP quantum-wire distributed feedback lasers by Bragg wavelength detuning," Jpn. J. Appl. Phys., vol. 46, no. 17, pp. L411-L413, Apr. 2007.

  8. S. Sakamoto, H. Kawashima, H. Naitoh, S. Tamura, T. Maruyama and S. Arai, "Reduced temperature dependence of lasing wavelength in membrane BH-DFB lasers with polymer cladding layers," IEEE Photon. Technol. Lett., vol. 19, no. 5, pp. 291-293, Mar. 2007.

  9. Y. Nishimoto, K. Miura, H. Yagi, D. Plumwongrot, K. Ohira, T. Maruyama, S. Arai, "Low-threshold current density GaInAsP/InP quantum-wire distributed feedback lasers fabricated by low-damage processes," Jpn. J. Appl. Phys., vol. 46, no. 2, pp. L34-L36, Feb. 2007.

  10. T. Maruyama, T. Okumura and S. Arai, "Direct wafer bonding of GaInAsP/InP membrane structure on silicon-on-insulator substrate," Jpn. J. Appl. Phys., vol. 45, no. 11, pp. 8717-8718, Nov. 2006.

  11. T. Maruyama, T. Okumura, S. Sakamoto, K. Miura,Y. Nishimoto and S. Arai, "GaInAsP/InP membrane BH-DFB lasers directly bonded on SOI substrate," Optics Express, vol. 16, no. 14, pp. 8184-8188, Sep. 2006.

  12. H. Yagi, K. Miura, Y. Nishimoto, D. Plumwongrot, K. Ohira, T. Maruyama and S. Arai, "Low-threshold-current operation of 1540 nm GaInAsP/InP distributed-feedback lasers with multiple-quantum-wire active regions," Appl. Phys. Lett., vol. 87, no. 22, pp. 223120-1-223120-3, Nov. 2005.

  13. H. Yagi, T. Sano, K. Miura, D. Plumwongrot, K. Ohira, T. Maruyama and S. Arai, GaInAsP/InP long-wavelength lasers with strain-compensated quantum-wire active regions and SiO2/semiconductor reflectors," IEICE Electronics Express, vol. 1, no. 17, pp. 540-544, Dec. 2004.

  14. A. Haque, T. Maruyama, H. Yagi, T. Sano, D. Plumwongrot and S. Arai, "Anomalous in-plane polarization dependence of optical gain in compressively strained GaInAsP/InP quantum wire lasers," IEEE J. Quantum Electron., vol. 40, no. 9, pp. 1344-1351, Sep. 2004.

  15. H. Yagi, T. Sano, K. Ohira, D. Plumwongrot, T. Maruyama, A. Haque, S. Tamura and S. Arai, "GaInAsP/InP partially strain-compensated multiple-quantum-wire lasers fabricated by dry etching and regrowth processes," Jpn. J. Appl. Phys., vol. 43, no. 6A, pp. 3401-3409, Jun. 2004.

  16. A. Haque, H. Yagi, T. Sano, T. Maruyama and S. Arai, "Electronic band structures of GaInAsP/InP vertically stacked multiple quantum wires with strain-compensating barriers," J. Appl. Phys., vol. 94, no. 3, pp. 2018-2023, Aug. 2003.

  17. H. Yagi, T. Sano, K. Ohira, T. Maruyama, A. Haque and S. Arai, "Room temperature-continuous wave operation of GaInAsP/InP multiple-quantum-wire lasers by dry etching and regrowth method," Jpn. J. Appl. Phys., vol. 42, no. 7A, pp. L748-L750, Jul. 2003.

  18. T. Sano, H. Yagi, K. Muranushi, S. Tamura, T. Maruyama, A. Haque and S. Arai, "Multiple-quantum-wire structures with good size uniformity fabricated by CH4/H2 dry etching and organometallic vapor-phase-epitaxial regrowth," Jpn. J. Appl. Phys., vol. 42, no. 6A, pp. 3471-3472, Jun. 2003.

  19. T. Maruyama, N. Nakamura and M. Watanabe, "Epitaxial growth of BeZnSe on CaF2/Si(111) substrate," Jpn. J. Appl. Phys., vol. 41, no. 8A, pp. L876-L877, Aug. 2002.

  20. Y. Niiyama, T. Maruyama, N. Nakamura and M. Watanabe, "Room-temperature ultraviolet photoluminescence of BeZnSe on GaP(001)," Jpn. J. Appl. Phys., vol. 41, no. 7A, pp. L751-L753, Jul. 2002.

  21. T. Maruyama, N. Nakamura and M. Watanabe, "Theoretical analysis of the threshold current density in BeMgZnSe quantum well ultra-violet lasers," Jpn. J. Appl. Phys., vol. 40, no. 12, pp. 6872-6873, Dec. 2001.

  22. T. Maruyama, N. Nakamura and M. Watanabe, "Improvement of the visible electroluminescence from nanocrystalline silicon embedded in single-crystalline CaF2 on Si(111) substrate prepared by rapid thermal anneal," Jpn. J. Appl. Phys., vol. 39, no. 4B, pp. 1996-2000, Apr. 2000.

  23. M. Watanabe, T. Maruyama and S. Ikeda, "Ligth emission from Si nanocrystals embedded in CaF2 epilayers on Si(111): Effect of rapid thermal annealing," J. Luminescence, vol. 80, no. 1-4, pp. 253-256, Dec. 1999.

  24. B. Y. Zhang, K. Furuya, Y. Ikeda, N. Kikegawa, M. Watanabe and T. Maruyama "Theoretical and experimental charac-terizations of hot electron emission of n-Si/CaF2/Au emitter used in hot electron detection experimen," Physica B, vol. 272, no. 1-4, pp. 425-427, Dec. 1999.

  25. T. Maruyama, N. Nakamura and M. Watanabe, "Visible electroluminescence from nanocrystalline silicon embedded in single-crystalline CaF2/Si(111) with rapid thermal anneal," Jpn. J. Appl. Phys., vol. 38, no. 8B, pp.L904-L906, Aug. 1999.

  26. M. Watanabe, T. Matsunuma, T. Maruyama and Y. Maeda, "Electroluminescence of nanocrystal Si embedded in singel-crystal CaF2/Si(111)," Jpn. J. Appl. Phys., vol. 37, no. 5B, pp. L591-L593, May 1998.

  27. W. Saitoh, K. Mori, H. Sugiura, T. Maruyama, M. Watanabe and M. Asada, "Reduction of electrical resistance of nanometer-thick CoSi2 film on CaF2," Jpn. J. Appl. Phys., vol. 36, no. 7A, pp. 4470-4471, Jul. 1997.

  28. F. Vazquez, D. Kobayashi, I. Kobayashi, Y. Miyamoto, K. Furuya, T. Maruyama, M. Watanabe, M. Asada, "Detection of hot electron current with scanning hot electron microscopy," Appl. Phys. Lett., vol. 69, no. 15, pp. 2196-2198, Dec. 1996.

研究助成

科学研究補助金 特別推進研究（分担）
「Ｓｉ系ＬＳＩ内広帯域配線層の為のＩｎＰ系メンブレン光・電子デバイス」(2007.04-2012.03)

科学研究補助金 若手研究B
「ＳＯＩ導波路上単一モード半導体薄膜レーザに関する研究」(2007.04-2009.03)

服部報公会　工学研究奨励援助
「量子閉じ込めと高屈折率差光閉じ込めを用いる半導体薄膜光機能素子に関する研究」(2006.09)

科学研究補助金 基盤研究A（分担）
「量子ナノ構造を用いる低消費電力・高機能単一波長半導体レーザの研究」(2005.04-2008.03)

科学研究補助金 若手研究B
「薄膜半導体光導波路を有する低次元量子井戸レーザに関する研究」(2005.04-2007.03)

独立行政法人　科学技術振興機構　戦略的創造研究推進事業（分担）
「低次元量子構造を用いる機能光デバイスの創製」(2002.11-2007.10)

東工大電気・情報系COE21「フォトニクスナノデバイス集積工学研究拠点」
若手研究者研究助成 (2003.01)

(財)理工学振興会
工学に関する研究の助成および研究者の養成援助 (2000.01)


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