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Crystal growth and optical assessment of Be-chalcogenide quantum well heterostructure for ultraviolet laser diodes with lattice matched to substrate
Takeshi YOKOYAMA, Yuuki NIIYAMA, Tomoyuki MURATA and Masahiro
WATANABE,
"Improvement of Crystalline Quality of BeZnSe Using Buffer Layer by
Migration Enhanced Epitaxy on GaP(001) Substrate,"
Jpn. J. Appl. Phys., vol.44, pp. L75-77, 2005.
Yuuki Niiyama, Takeshi Yokoyama and Masahiro Watanabe, "Epitaxial growth and optical properties for ultraviolet region of BeMgZnSe on GaP(001) substrate," Phys. Stat. Sol. (b), vol.241, pp. 479-482, 2004. Yuuki NIIYAMA, Takeshi YOKOYAMA and Masahiro WATANABE, "Effect of Buffer Layer on Epitaxial Growth of High-Magnesium-Content BeMgZnSe Lattice Matched to GaP (001) Substrate," Jpn. J. Appl. Phys., vol. 42, pp. L599-602, 2003. T. Maruyama, N. Nakamura and M. Watanabe, "Epitaxial Growth of BeZnSe on CaF2/Si(111) Substrate," Jpn. J. Appl. Phys., vol. 41, no. 8A, pp. L876-877, Aug. 2002. Y. Niiyama, T. Maruyama, N. Nakamura and M. Watanabe, "Room- Temperature Ultraviolet Photoluminescence of BeZnSe on GaP(001)," Jpn. J. Appl. Phys., vol. 41, no. 7A, pp. L751-753, Jul. 2002. T. Maruyama, N. Nakamura and M. Watanabe, "Theoretical Analysis of Threshold Current Density in BeMgZnSe Quantum Well Ultra- violet Lasers," Jpn. J. Appl. Phys., vol. 40, no. 12, pp. 6872- 6873, Dec. 2001.
Fundamental research of fluoride based Quantum hetero structures
and optelectronic devices
M. Watanabe, T. Funayama, T. Teraji, N. Sakamaki, "CaF2/CdF2 Double-Barrier Resonant Tunneling Diode with High Room-Temperature Peak-to-Valley Ratio," Jpn. J. Appl. Phys., vol. 39, no. 7B, pp. L716-L719, July 2000.
M. Watanabe, Y. Iketani, M. Asada, "Epitaxial Growth and Electrical Characteristics of CaF2/Si/CaF2 Resonant Tunneling Diode Structures Grown on Si(111) 1 -off Substrate", Jpn. J. Appl. Phys., vol. 39, no. 10A, pp. L964-L967, July 2000. M. Watanabe, Y. Aoki, W. Saitoh and M. Tsuganezawa, "Negative Differential Resistance of CdF2/CaF2 Resonant Tunneling Diode on Si(111) Grown by Partially Ionized Beam Epitaxy," Jpn. J. Appl. Phys., 38, 2A, pp.L116-L118, 1999. M. Watanabe, W. Saitoh, Y. Aoki, J. Nishiyama, "Epitaxial growth of nanometer-thick CaF2/CdF2 heterostructures using partially ionized beam epitaxy," Solid State Electron., 42, 7-8, pp.1627-1630, 1998. M. Watanabe, Y. Aoki, W. Saitoh and M. Tsuganezawa, "Negative Differential Resistance of CdF2/CaF2 Resonant Tunneling Diode on Si(111) Grown by Partially Ionized Beam Epitaxy," Jpn. J. Appl. Phys., 38, 2A, pp.L116-L118, 1999. Detailed presentation with allied Laboratories
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