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弗化物系超へテロ構造によるサブバンド間遷移レーザの基礎研究
Keisuke Jinen, Takeshi Kikuchi, Masahiro Watanabe and Masahiro Asada,
"Room-Temperature Electroluminescence from Single-Period (CdF2/CaF2) Inter-Subband Quantum Cascade Structure on Si substrate" Jpn. J. Appl. Phys. Vol. 45, pp. 3656-3658, 2006.
BeMgZnSe系ヘテロ構造を用いた紫外線光デバイスの基礎研究
Yuuki Niiyama, Tomoyuki Murata, and Masahiro Watanabe,
"Ultraviolet lasing from optically pumped BeMgZnSe quantum-well laser structures" Appl. Phys. Lett. vol. 87, pp. 142106 , 2005. Y. Niiyama and M. Watanabe, "BeMgZnSe based ultraviolet lasers," Semicond. Sci. Tech. vol. 20, pp. 1187-1197, 2005. Y. Niiyama, T. Murata and M. Watanabe, "Optically pumped ultraviolet lasing of BeMgZnSe based quantum well laser structures," phys. status solidi (c), submitted. Takeshi YOKOYAMA, Yuuki NIIYAMA, Tomoyuki MURATA and Masahiro WATANABE, "Improvement of Crystalline Quality of BeZnSe Using Buffer Layer by Migration Enhanced Epitaxy on GaP(001) Substrate," Jpn. J. Appl. Phys., vol.44, pp. L75-77, 2005. Yuuki Niiyama, Takeshi Yokoyama and Masahiro Watanabe, "Epitaxial growth and optical properties for ultraviolet region of BeMgZnSe on GaP(001) substrate," Phys. Stat. Sol. (b), vol.241, pp. 479-482, 2004. Yuuki NIIYAMA, Takeshi YOKOYAMA and Masahiro WATANABE, "Effect of Buffer Layer on Epitaxial Growth of High-Magnesium-Content BeMgZnSe Lattice Matched to GaP (001) Substrate," Jpn. J. Appl. Phys., vol. 42, pp. L599-602, 2003. T. Maruyama, N. Nakamura and M. Watanabe, "Epitaxial Growth of BeZnSe on CaF2/Si(111) Substrate," Jpn. J. Appl. Phys., vol. 41, no. 8A, pp. L876-877, Aug. 2002. Y. Niiyama, T. Maruyama, N. Nakamura and M. Watanabe, "Room-Temperature Ultraviolet Photoluminescence of BeZnSe on GaP(001)," Jpn. J. Appl. Phys., vol. 41, no. 7A, pp. L751-753, Jul. 2002. T. Maruyama, N. Nakamura and M. Watanabe, "Theoretical Analysis of Threshold Current Density in BeMgZnSe Quantum Well Ultra- violet Lasers," Jpn. J. Appl. Phys., vol. 40, no. 12, pp. 6872-6873, Dec. 2001.
フッ化物系量子へテロ構造の基礎研究
M. Watanabe, T. Funayama, T. Teraji, N. Sakamaki,
"CaF2/CdF2 Double-Barrier Resonant Tunneling Diode with High Room-Temperature Peak-to-Valley Ratio," Jpn. J. Appl. Phys., vol. 39, no. 7B, pp. L716-L719, July 2000. M. Watanabe, Y. Iketani, M. Asada, "Epitaxial Growth and Electrical Characteristics of CaF2/Si/CaF2 Resonant Tunneling Diode Structures Grown on Si(111) 1 -off Substrate", Jpn. J. Appl. Phys., vol. 39, no. 10A, pp. L964-L967, July 2000. M. Watanabe, Y. Aoki, W. Saitoh and M. Tsuganezawa, "Negative Differential Resistance of CdF2/CaF2 Resonant Tunneling Diode on Si(111) Grown by Partially Ionized Beam Epitaxy," Jpn. J. Appl. Phys., 38, 2A, pp.L116-L118, 1999. M. Watanabe, W. Saitoh, Y. Aoki, J. Nishiyama, "Epitaxial growth of nanometer-thick CaF2/CdF2 heterostructures using partially ionized beam epitaxy," Solid State Electron., 42, 7-8, pp.1627-1630, 1998. M. Watanabe, Y. Aoki, W. Saitoh and M. Tsuganezawa, "Negative Differential Resistance of CdF2/CaF2 Resonant Tunneling Diode on Si(111) Grown by Partially Ionized Beam Epitaxy," Jpn. J. Appl. Phys., 38, 2A, pp.L116-L118, 1999. より詳しい研究成果はこちらをご覧下さい 協力研究室と共同で掲載されております
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