| Ferrite Conference
Hall, Centennial Memorial Building, Tokyo Institute of Technology |
| Program |
| 10:00-10:10 |
Opening address |
|
M. Konagai |
|
|
| 10:10-10:45 |
Spatially resolved cathodoluminescence
investigations of quantum structures on GaAs (311)A substrates |
|
U. Jahn |
Paul-Drude Institute and Tokyo Institute
of Technology |
Invited |
| 10:45-11:10 |
Improvement of nanoscale patterning
of heavily doped p-type GaAs by atomic force microscope(AFM)-based
surface oxidation process |
|
*Y. Matsuzaki, S. Hasui, S. Kamada,
A. Yamada and M. Konagai |
|
|
| 11:10-11:35 |
Fabrication of n-channel InSb MIS
FETs |
|
O. Sugiura |
|
|
| 11:35-12:00 |
Structural control and characterization
of In2Se3 spontaneous superstructure grown by molecular beam epitaxy |
|
*T. Okamoto, T. Ohtsuka, K. Nakanishi,
A. Yamada and K. Konagai |
|
|
| 12:00-13:00 |
LUNCH |
|
|
|
|
| 13:00-13:35 |
Electron Transport in GaN Epilayers
grown by metal-organic chemical vapor deposition |
|
H. J. Lee |
Joenbok National University |
Invited |
| 13:35-14:10 |
Embedded metallic features as building-block
for metal-semiconductor quantum devices |
|
*L. -E. Wernersson, B. Gustafson,
L. Jarlskog, W. Seifert, M. Suhara and L. Samuelson |
Lund University |
Invited |
| 14:10-14:35 |
CaInAs/InP quantum-wire lasers
fabricated by low-damage dry-etching process |
 |
*S. Arai, N. Nunoya, M. Nakamura,
H. Yasumoto, Q. Yang, M. Morshed, H. Midorikawa and M. Madhan Raj |
|
|
| 14:35-15:00 |
MOVPE of 1.2micrometer highly strained
GaInAs-GaAs quantum wells beyond the Matthews and Blankeslee critical
thickness |
|
*D. Schlenker, T. Miyamoto, Z.
Chen, M. Kawaguchi, T. Kondo, F. Koyama and K. Iga |
|
|
| 15:00-15:25 |
All-optical switching characterics
of semiconductor nonlinear waveguide |
|
*K. Nakatsuhara, S. -H Jeong, Y.
Tsukishima, T. Shirado and T. Mizumoto |
|
|
| 15:25-15:50 |
Epitaxial growth and UV luminescence
of CaF2/ZnO/CaF2 hetero structures on Si(111) |
|
*M. Watanabe, Y. Maeda and S. Okano |
|
|
| 15:50-16:00 |
BREAK |
|
|
|
|
| 16:00-16:35 |
Control of quantum dots formation
and possible application of the dots to future quantum information
devices |
|
Y. Aoyagi |
RIKEN Institute and Tokyo Institute
of Technology |
Invited |
| 16:35-17:00 |
Single electron devices based on
nano crystalline silicon |
|
*B. J. Hinds, A. Dutta, K. Nishiguchi,
F. Yun, S. Hatatani and S. Oda |
|
|
| 17:00-17:25 |
I-V peak width analysis of triple-barrier
resonant tunneling diodes grown by OMVPE |
|
*M. Nagase, M. Suhara, Y. Miyamoto
and K. Furuya |
|
|
| 17:25-17:50 |
25nm pitch GaInAs/InP buried structure
and 80nm pitch Au/Cr electrodes for interference/diffraction hot electron
devices |
|
*Y. Miyamoto, A. Kokubo, H. Oguchi
and K. Furuya |
|
|
| 17:50-18:15 |
Excimer-laser-processed ultra-large
grain growth for Si thin-film solar-cells |
|
*W.-C. Yeh, Y. Sano and M. Matsumura |
|
|
| 18:15-18:40 |
35nm metal gate p-MOSFETs with
PtSi Schottky source/drain on SIMOX substrate |
|
*M. Asada, W. Saitoh, A. Itoh and
S. Yamagami |
|
|
| 18:40-18:50 |
Closing remarks |
|
M. Matsumura |
|
|
