1994-1999

  • N. Kikegawa, B. Y. Zhang, Y. Ikeda, N. Sakai, K. Furuya, M. Asada, M. Wanatabe and W. Saito, “Shortening of Detection Time for Observation of Hot Electron Spatial Distribution by Scanning Hot Electron Microscopy”, Jpn. J. Appl. Phys., Vol. 38, Part 1, No. 4A, pp.2108-2113,1999
  • W.Saitoh, A.Itoh, S.Yamagami, and M.Asada, "Analysis of Short-Channel Schottky Source/Drain Metal-Oxide-Semiconductor Field-Effect Transistor on Silicon-on-Insulator Substrate and Demonstration of sub-50nm n-typeDevices with Metal Gate", Jpn. J. Appl. Phys., Vol. 38, No. 11, pp. 6226-6231, 199
  • M.Tsutsui, M.Watanabe, and M.Asada: "Resonant Tunneling Diodes in Si/CaF2 Heterostructures Grown by Molecular Beam Epitaxy", Jpn. J. Appl. Phys., Vol. 38, No. 8B, pp. L920-L922, 1999
  • W.Saitoh, S.Yamagami, A.Itoh, and M.Asada, "35nm Metal Gate p-type Metal Oxide Semiconductor Field-Effect Transistor with PtSi Schottky Source/Drain on Separation by Implanted Oxygen Substrate", Jpn.J.Appl.Phys., Vol. 38, No. 6A, pp. L629-L631, 1999
  • .Oguma, N.Sashinaka, and M.Asada, "Terahertz Response with Gradual Change from Square-Law Detection to Photon-Assisted Tunneling in Triple-Barrier Resonant Tunneling Diodes", Jpn.J.Appl.Phys., Vol. 38, No. 7A, pp. L717-L719, 1999
  • Y.Miyamoto, A.Yamaguchi, K. Oshima, W.Saitoh and M.Asada, "Metal-Insulator-Semiconductor emitter with epitaxial CaF2 layer as insulator" , J. Vac. Sci. Technol. , vol.B 16, pp.851-854, no. 2 , Mar/Apr 1998
  • M. Asada, K. Osada and W. Saitoh, "Theoretical Analysis and Fabrication of Small Area Metal/Insulator Resonant Tunneling Diode Integrated with Patch Antenna for Terahertz Photon Assisted Tunneling" Solid State Electron., vol.42, pp.1543-1546,1998
  • M. Tsutsui, W. Saitoh, K. Yamazaki and M. Asada, "Proposal and Analysis of Coupled Channel Tunneling FET with New Heterostructures on Silicon" Solid State Electron, vol.42, pp.1547-1551, 1998
  • W. Saitoh, K. Yamazaki, M. Tsutsui and M. Asada, "Analysis of the Influence of Carrier Scattering in the Channel of a Metal/Insulator Tunneling Field Effect Transistor" Japan. J. Appl. Phys., vol.37, pp.5921-5925, 1998.
  • W. Saitoh, K. Yamazaki, M. Tsutsui, A. Itoh and M. Asada, "Fabrication and Characteristics of a Field Effect Transistor Using CdF2/CaF2 Heterostructures on a Si Substrate" Japan. J. Appl. Phys., vol.37, pp.L1138-L1140, 1998
  • W. Saitoh, K. Yamazaki, M. Tsutsui and M. Asada, "Analysis of Structure Dependence of Very Short Channel Field Effect Transistor Using Vertical Tunneling with Heterostrucures on Silicon" IEICE Trans. Electron., vol.E81-C, pp.1918-1925, 1998
  • W. Saitoh, K. Mori, H. Sugiura, T. Maruyama, M. Watanabe and M. Asada, "Reduction of Electrical Resistance of Nanometer-Thick CoSi2 Film on CaF2," Jpn. J. Appl. Phys., vol. 36, pp.4470-4471, 1997
  • F. Vazquez, D. Kobayashi, I. Kobayashi, Y. Miyamoto, K. Furuya, T. Maruyama, M. Watanabe, M. Asada, "Detection of hot electron current with scanning hot electron microscopy", Appl. Phys. Lett., vol.68, No.15, pp.2196-2198, Oct. 1996.
  • M. Asada, “A Possible Three-Terminal Amplifier Device in the Terahertz Frequency Range Using Photon-Assisted Tunneling,” Jpn. J. Appl. Phys., vol. 35, pp.L685-L687, 1996
  • W. Saitoh, K. Yamazaki, M. Asada and M. Watanabe, “Proposal and Analysis of Very Short Channel Field Effect Transistor Using Vertical Tunneling with New Heterostructures on Silicon,” Jpn. J. Appl. Phys., vol. 35, pp.L1104-L1106, 1996
  • M. Asada, “Proposal and Analysis of a Three-Terminal Photon-Assisted Tunneling Device Operating in the Terahertz Frequency Range,” IEICE Trans. Electron., E79-C, pp.1537-1542, 1996.
  • T. Suemasu, W. Saitoh, Y. Kohno, K. Mori, M. Watanabe and M. Asada, “Transfer Efficiency of Hot Electron in a Metal(CoSi2)/ Insulator(CaF2) Quantum Interference Transistor,” Surface Science, 361/362, pp.209-212, 1996
  • K. Mori, W. Saitoh, T. Suemasu, Y. Kohno, M. Watanabe, and M. Asada, “Room-Temperature Observation of Multiple Negative Differential Resistance in a Metal(CoSi2)/ Insulator(CaF2) Quantum Interference Transistor Structure,” Physica B, 227，pp.213-215, 1996
  • Y. Kohno and M. Asada, “Theoretical Base Current in Metal/Insulator Resonant Tunneling Transistors Based on Electron Wave Scattered by Base Port Structure,” Physica B, 227, pp.216-219, 1996.
  • M. Watanabe, F. Iizuka, and M. Asada, “Visible Light Emission from Nanocrystalline Silicon Embedded in CaF2 Layers on Si(111),” IEICE Trans., E79-C, no.11, pp.1562-1567, Nov. 1996
  • Saitoh, T. Suemasu, Y. Kohno, M. Watanabe and M. Asada, "Multiple Negative Differential Resistance due to Quantum Interference of Hot Electron Waves in Metal(CoSi2)/Insulator(CaF2) Heterostructures and Influence of Parasitic Elements," Jpn. J. Appl. Phys., vol.34, pp.4481-4482, 1995
  • Suemasu, Y. Kohno, W. Saitoh, M. Watanabe and M. Asada, "Theoretical and Measured Characteristics of Metal (CoSi2)/ Insulator (CaF2) Resonant Tunneling Transistors and the Influence of Parasitic Elements," IEEE Trans. Electron Devices, vol.42, no.12, pp.2203-2210, 1995
  • Asada, M. Watanabe, T. Suemasu, Y. Kohno and W. Saitoh, "Epitaxial Growth of a Metal(CoSi2)/Insulator(CaF2) Nanometer-Thick Heterostructure and its Application to Quantum-Effect Devices," J. Vac. Sci. Technol., A13(3), pp.623-628, 1995
  • Saitoh, T. Suemasu, Y. Kohno, M. Watanabe, and M. Asada, "Metal (CoSi2)/ Insulator(CaF2) Hot Electron Transistor Fabricated by Electron-Beam Lithography on a Si Substrate," Jpn. J. Appl. Phys., vol.34, pp. L1254-1256, 1995
  • Watanabe, F. Iizuka, and M. Asada, "Formation of silicon and cobalt silicide nanoparticles in CaF2," Jpn. J. Appl. Phys, vol.34, no.8B, pp4380-4383, Aug. 1995
  • H. Hirayama, K. Matsunaga, M. Asada, and Y. Suematsu, "Lasing action of Ga0.67In0.33As/GaInAsP/InP tensile-strained quantum-box laser," Electron. Lett., vol.30, no.2, pp.142-143, Jan. 1994
  • H. Hirayama, J. Yoshida, Y. Miyake, and M. Asada, "Carrier capture time and its effect on the efficiency of quantum-well lasers," IEEE J. Quantum Electron., vol.30, no.1, pp.54-62, 1994
  • H. Hirayama, K. Matsunaga, M. Asada, T. Kakinuma, and M. Kumazawa, "Emission energy shift in GaInAs/GaInAsP strained quantum-box structures due to 0-dimensional quantum-box effect," Japan. J. Appl. Phys., vol.33, no.6A, pp.3571-3577, 1994
  • H. Hirayama, and M. Asada, "Hole capture rate of GaInAs/InP strained quantum-well lasers," Oprtical and Quantum Electronics (Chapman&Hall), vol.26, no.2, S719-S729, 1994
  • T. Suemasu, M. Watanabe, J. Suzuki, Y. Kohno, M. Asada, and N. Suzuki, "Metal (CoSi2)/ insulator (CaF2) resonant tunneling diode," Jpn. J. Appl. Phys., vol.33, pp57-65, Jan. 1994.
  • M.Watanabe, T.Suemasu, and M.Asada, "Metal/insulator heterostructure electron devices," 「金属／絶縁体ヘテロ接合電子デバイス」A monthly publication of the Jpn. Soc. of Appl. Phys., vol.63, no.2, (応用物理 第63巻 第2号解説記事), pp.124-131, Feb. 1994.
  • T. Suemasu, Y. Kohno, N. Suzuki, M. Watanabe, and M. Asada, "Different characteristics of metal(CoSi2)/insulator(CaF2) resonant tunneling transistors depending on base quantum-well layer," Trans. IEICE on Electronics, E77-C, pp. 1450-1454, 1994
  • T. Suemasu, Y. Kohno, W. Saitoh, N. Suzuki, M. Watanabe, and M. Asada, "Quantum interference of electron wave in metal(CoSi2)/ insulator(CaF2) resonant tunneling hot electron transistor structure," Jpn. J. Appl. Phys., vol.33, pp.L1762-L1765, Dec. 1994