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  • Jornal papers

2016-2017

  • S. Kitagawa, M. Mizuno, S. Saito, K. Ogino, S. Suzuki, and M. Asada, “Frequency-tunable resonant-tunneling-diode terahertz oscillators applied to absorbance measurement” Japanese Journal of Applied Physics vol. 56, 058002, 2017. https://doi.org/10.7567/JJAP.56.058002
  • Y. Takida, K. Nawata, S. Suzuki, M. Asada, and H. Minamide, “Terahertz-wave differential detection based on simultaneous dual-wavelength up-conversion”, AIP ADVANCES vol. 7, 035020, 2017. http://dx.doi.org/10.1063/1.4979405
  • S. Kitagawa, K. Ogino, S. Suzuki, and M. Asada, “Wide frequency tuning in resonant-tunneling-diode terahertz oscillator using forward-biased varactor diode”, Japanese Journal of Applied Physics vol. 56, 040301 (2017). https://doi.org/10.7567/JJAP.56.040301
  • Y. Takida, K. Nawata, S. Suzuki, M. Asada, and H. Minamide, “Nonlinear optical detection of terahertz-wave radiation from resonant tunneling diodes”, OPTICS EXPRESS, vol. 25, No. 5, pp. 5389-5395, 2017. https://doi.org/10.1364/OE.25.005389
  • K. Murano, I. Watanabe, A. Kasamatsu, S. Suzuki, M. Asada, W. Withayachumnankul, T. Tanaka, and Y. Monnai, “Low-Profile Terahertz Radar Based on Broadband Leaky-Wave Beam Steering”, IEEE Trans. THz Science and Technology, vol. 7, No. 1, pp.60-69, 2017. DOI:10.1109/TTHZ.2016.2624514
  • M. Asada and S. Suzuki, “Room-Temperature Oscillation of Resonant Tunneling Diodes close to 2 THz and Their Functions for Various Applications”, J. Infrared Millimeter and THz Waves, vol. 37, pp.1185–1198, 2016. DOI: 10.1007/s10762-016-0321-6
  • T. Maekawa, H. Kanaya, S. Suzuki, and M. Asada, “Oscillation up to 1.92 THz in resonant tunneling diode by reduced conduction loss”, Applied Physics Express, vol. 9, 024101, 2016. http://doi.org/10.7567/APEX.9.024101
  • N. Oshima, K. Hashimoto, S. Suzuki and M. Asada, “Wireless data transmission of 34 Gbit/s at a 500-GHz range using resonant-tunnelling diode terahertz oscillator”, Electronics Letters, vol. 52, No. 22, pp.1897–1898, 2016. doi: 10.1049/el.2016.3120
  • S. Kitagawa, S. Suzuki and M. Asada, “Wide frequency-tunable resonant tunnelling diode terahertz oscillators using varactor diodes”, Electronics Letters, vol. 52, No. 6, pp. 479–481, 2016. doi: 10.1049/el.2015.3921
  • S. Suzuki, T. Nukariya, Y. Ueda, T. Otsuka, and M. Asada, “High Current Responsivity and Wide Modulation Bandwidth Terahertz Detector Using High-Electron-Mobility Transistor for Wireless Communication”, J. Infrared Millimeter and THz Waves, vol. 37, pp. 658–667, 2016. DOI: 10.1007/s10762-016-0260-2
List2016.pdf

2015-2016

  • M. Asada and S. Suzuki, “Theoretical analysis of external feedback effect on oscillation characteristics of resonant-tunneling-diode terahertz oscillators”, Jpn. J. Appl. Phys. vol. 54, 070309(1-3), 2015.
  • H. Kanaya, T. Maekawa, S. Suzuki, and M. Asada, “Structure dependence of oscillation characteristics of resonant-tunneling-diode terahertz oscillators associated with intrinsic and extrinsic delay times”, Jpn. J. Appl. Phys. vol. 54, 094103(1-8), 2015.
  • K. Okada, K. Kasagi, N. Oshima, S. Suzuki, and M. Asada, “Resonant-Tunneling-Diode Terahertz Oscillator Using Patch Antenna Integrated on Slot Resonator for Power Radiation”, IEEE Trans. THz Sci. Technol. vol. 5, no. 4, July, pp.613-618, 2015.
  • Y. Ikeda, S. Kitagawa, K. Okada, S. Suzuki, and M. Asada, “Direct intensity modulation of resonant-tunneling-diode terahertz oscillator up to ~30 GHz,” IEICE Electron. Express, vol.12, No.3, 20141161(1-10), Feb. 2015.
  • K. Kasagi, N. Oshima, S. Suzuki, and M. Asada, “Power Combination in 1 THz Resonant-Tunneling-Diode Oscillators Integrated with Patch Antennas”, Trans. Electron., IEICE Japan, vol. E98-C, no.12, pp.1131-1133, 2015. 
  • M. Asada and S. Suzuki, “Resonant Tunneling Diodes for THz Sources,” Chapter 7 of “Handbook of Terahertz Technologies: Devices and Applications,” Edited by H.-J. Song and T. Nagatsuma, Pan Stanford Publishing, 2015.
  • 浅田雅洋、鈴木左文, “共鳴トンネルダイオードによる室温小型テラヘルツ光源” (Invited), OPTRONICS, no.9, pp. 70-73, 2015.
  • S. Kitagawa, S. Suzuki, and M. Asada, “Wide frequency-tunable resonant tunneling terahertz oscillators using varactor diodes,” Electron. Lett. vol. 52, no. 6, pp.479-481, 2016.
  • T. Maekawa, H. Kanaya, S. Suzuki, and M. Asada, “Oscillation up to 1.92 THz in resonant tunneling diode by reduced conduction loss,” Appl. Phys. Express, vol. 9, 024101, 2016.
  • S. Suzuki, T. Nukariya, Y. Ueda, T. Otsuka, and M. Asada, “High Current Responsivity and Wide Modulation Bandwidth Terahertz Detector Using High-Electron-Mobility Transistor for Wireless Communication”, J Infrared Millimeter and Terahz Waves , vol. 37, pp. 658?667, 2016.

2014

  • M. Feiginov, H. Kanaya, S. Suzuki, and M. Asada, “Operation of resonant-tunneling diodes with strong back injection from the collector at frequencies up to 1.46 THz,” Appl. Phys. Lett. Vol. 104, No.24, 243509(1-4), July 2014.
  • T. Maekawa, H. Kanaya, S. Suzuki and M. Asada, “Frequency increase in terahertz oscillation of resonant tunnelling diode up to 1.55 THz by reduced slot-antenna length,” Electron. Lett. Vol. 50, No. 17, pp. 1214?1216, Aug. 2014.
  • S. Kitagawa, S. Suzuki, and M. Asada, “650-GHz Resonant-Tunneling-Diode VCO with Wide Tuning Range Using Varactor Diode,” IEEE Electron Dev. Lett. Vol.35, No.12, pp.1215-1217, Dec.2014.
  • Y. Ikeda, S. Kitagawa, K. Okada, S. Suzuki, and M. Asada, “Direct intensity modulation of resonant-tunneling-diode terahertz oscillator up to ~30 GHz,” IEICE Electron. Express, Vol.12, No.3, 20141161(1-10), Feb. 2015.
  • 浅田雅洋、鈴木左文、“共鳴トンネルダイオード ~ テラヘルツ波の実用光源への期待”,応用物理,vol.83,No.7,pp.565-570,2014年7月. 
  • M. Asada and S. Suzuki, “Resonant Tunneling Diodes for THz Sources,” Chapter 7, “Handbook of Terahertz Technologies: Devices and Applications,” Edited. by H.-J. Song and T. Nagatsuma, Pan Stanford Publishing, 2014 (to be published).
List2014.pdf

2013

  • S. Suzuki, M. Shiraishi, H. Shibayama, and M. Asada, “High-Power Operation of Terahertz Oscillators with Resonant Tunneling Diodes Using Impedance-Matched Antennas and Array Configuration”, IEEE J. Selected Topics Quantum Electron., vol. 19, no. 1, 8500108, Feb. 2013.
  • H. Kanaya, S. Suzuki, and M. Asada, ?Terahertz Oscillation of Resonant Tunneling Diodes with Deep and Thin Quantum Wells”, Electron. Express, vol.10, pp.1-7, 2013.
  • M. Asada, H. Kanaya, and S. Suzuki, “Terahertz Emission from Resonant Tunneling Diodes without Satisfying Oscillation Condition”, Jpn. J. Appl. Phys. vol.52, 100210(1-4), 2013.
  • H. Kanaya, R. Sogabe, T. Maekawa, S. Suzuki, and M. Asada, “Fundamental Oscillation up to 1.42 THz in Resonant Tunneling Diodes by Optimized Collector Spacer Thickness”, J. Infrared, Millimeter and Terahertz Waves, vol. 35, pp.425-431, 2014.
  • S. Kitagawa, S. Suzuki, and M. Asada, ”Wide-Range Varactor-Tuned Terahertz Oscillator Using Resonant Tunneling Diode”, J. Infrared, Millimeter and Terahertz Waves, vol. 35, pp. 445-450, 2014.
  • H. Sugiyama, A. Teranishi, S. Suzuki, and M. Asada, “Structural and electrical transport properties of MOVPE-grown pseudomorphic AlAs/InGaAs/InAs resonant tunneling diodes on InP substrates”, Jpn. J. Appl. Phys. vol. 53, 031202(1-6), 2014.
  • Asada and S. Suzuki, “Resonant Tunneling Diodes for THz Sources”, Chapter 7, “Handbook of Terahertz Technologies: Devices and Applications”, Edited. by H.-J. Song and T. Nagatsuma, Pan Stanford Publishing, 2014 (to be published).
List2013.pdf

2012

  • A. Teranishi, K. Shizuno, S. Suzuki, M. Asada, H. Sugiyama, and H. Yokoyama,” Fundamental Oscillation up to 1.08 THz in Resonant Tunneling Diodes with High-Indium-Composition Transit Layers for Reduction of Transit Delay”, IEICE Electronics Express, vol. 9, no. 5, pp. 385-390, Mar. 2012.
  • A. Teranishi, S. Suzuki, K. Shizuno, M. Asada, H. Sugiyama, and H. Yokoyama, “Estimation of Transit Time in Terahertz Oscillating Resonant Tunneling Diodes with Graded Emitter and Thin Barriers”, IEICE Trans. Electron., vol. E95-C, No. 3, pp. 401-407, Mar. 2012.
  • H. Shibayama, S. Suzuki, M. Shiraishi, and M. Asada, “Dependence of Output Power on Slot Antenna Width in Terahertz Oscillating Resonant Tunneling Diodes”, J. Infrared Milli. Terahz. Waves, vol. 33, pp. 475-478, Apr. 2012.
  • K. Ishigaki, M. Shiraishi, S. Suzuki, M. Asada, N. Nishiyama, and S. Arai, “Direct intensity modulation and wireless data transmission characteristics of terahertz-oscillating resonant tunnelling diodes,” Electron. Lett., vol. 48, no. 10, pp. 582-583, May 2012.
  • 鈴木左文、鏑木新治、金谷英敏、浅田雅洋、「共鳴トンネルダイオードのテラヘルツ発振とレーザー光照射による出力の変調」レーザー学会誌「レーザー研究」vol. 40, no. 7, pp. 517-522, Jul. 2012.
  • S. Suzuki, S. Kaburaki, H. Kanaya, and M. Asada, “Terahertz Oscillation of Resonant Tunneling Diode and Modulation of Its Output Power with Laser Irradiation”, Rev. Laser Eng., vol. 40, no. 7, pp. 517-522, Jul. 2012.
  • H. Kanaya, H. Shibayama, R. Sogabe, S. Suzuki, and M. Asada, “Fundamental Oscillation up to 1.31 THz in Resonant Tunneling Diodes with Thin Well and Barriers”, Appl. Phys. Express, vol. 5, 124101, Nov. 2012.
  • S. Suzuki, M. Shiraishi, H. Shibayama, and M. Asada, “High-Power Operation of Terahertz Oscillators with Resonant Tunneling Diodes Using Impedance-Matched Antennas and Array Configuration”, IEEE J. Selected Topics Quantum Electron., vol. 19, no. 1, 8500108, Feb. 2013.
List2012.pdf

2011

  • M. Shiraishi, H. Shibayama, K. Ishigaki, S. Suzuki, M. Asada, H. Sugiyama, and H. Yokoyama, "High Output Power (~400 W) Oscillators at around 550GHz Using Resonant Tunneling Diodes with Graded Emitter and Thin Barriers", Appl. Phys. Express, vol. 4, 064101, 2011.
  • M. Asada and S. Suzuki, "Terahertz Oscillators Using Electron Devices - an Approach with Resonant Tunneling Diodes" (invited), IEICE Electron. Express, vol. 8, no.14, pp.1110-1126, July 2011.
  • S. Suzuki, K. Karashima, K. Ishigaki, and M. Asada, "Heterodyne Mixing of Sub-Terahertz Output Power from Two Resonant Tunneling Diodes Using InP Schottky Barrier Diode", Jpn. J. Appl. Phys., vol. 50, 080211, 2011.
  • H. Sugiyama, A. Teranishi, S. Suzuki, and M. Asada, "High Uniformity InP-Based Resonant Tunneling Diode Wafers with Peak Current Density of over 6×105 A/cm2 Grown by Metal-Organic Vapor-Phase Epitaxy", J. Crystal Growth, vol. 336, pp. 24-28, 2011.
  • 浅田雅洋、鈴木左文、「電子デバイスによるテラヘルツ光源」電気学会論文誌A(基礎・材料共通)vol.131-A, pp.21-25, 2011. M. Asada and S. Suzuki, "Room-Temperature Terahertz Oscillation of Electron Devices", J. Institute of Electrical Engineers of Japan, vol.131-A, pp.21-25, 2011.
  • H. Sugiyama, S. Suzuki, and M. Asada", Room-Temperature Resonant Tunneling Diode Terahertz Oscillator Based on Precisely Controlled Semiconductor Epitaxial Growth Technology", NTT Technical Review, vol.9, no.10, Oct. 2011 (online journal). Japanese version: 杉山弘樹,鈴木左文,浅田雅洋,「高精度結晶成長技術による共鳴トンネルダイオードテラヘルツ発振器の実現」,NTT技術ジャーナル,vol.23, no.7, pp.12-17,2011年7月.
  • 浅田雅洋,「テラヘルツ波新産業」4-2節(共鳴トンネルダイオード)pp.70-75,斗内政吉監修, シーエムシー出版,2011. M. Asada, "Resonant Tunneling Diodes", Ch. 14.2 in "New Terahertz Industry", Edited by M. Tonouchi, CMC Publishing Co., 2011.
List2011.pdf

2010

  • M. Shiraishi, S. Suzuki, A. Teranishi, M. Asada, H. Sugiyama, and H. Yokoyama, “Fundamental Oscillation of up to 915 GHz in Small-Area InGaAs/AlAs Resonant Tunneling Diodes with Planar Slot Antennas”, Jpn. J. Appl. Phys., vol. 49, 020211, 2010.
  • K. Karashima, R. Yokoyama, M. Shiraishi, S. Suzuki, S. Aoki, and M. Asada, “Measurement of Oscillation Frequency and Spectral Linewidth of Sub-Terahertz InP-Based Resonant Tunneling Diode Oscillators Using Ni?InP Schottky Barrier Diode”, Jpn. J. Appl. Phys. Vol. 49, 020208, 2010.
  • K. Hinata, M. Shiraishi, S. Suzuki, M. Asada, H. Sugiyama, and H. Yokoyama, “Sub-Terahertz Resonant Tunneling Diode Oscillators with High Output Power (∼200μW) Using Offset-Fed Slot Antenna and High Current Density”, Appl. Phys. Express vol.3, 014001, 2010.
  • S. Suzuki, M. Asada, A. Teranishi, H. Sugiyama, and H. Yokoyama, “Fundamental oscillation of resonant tunneling diodes above 1 THz at room temperature,” Appl. Phys. Lett., vol. 97, 242102(1-3), 2010.
  • S. Suzuki, K. Sawada, A. Teranishi, M. Asada, H. Sugiyama, and H. Yokoyama, “Fundamental oscillations at ~900GHz with low bias voltages in RTDs with spike-doped structures,” Electron. Lett., vol.46, pp.1006-1007, 2010.
  • H. Sugiyama, H. Yokoyama, A. Teranishi, S. Suzuki, and M. Asada, “Extremely High Peak Current Densities of over 1×106A/cm2 in InP-Based InGaAs/AlAs Resonant Tunneling Diodes Grown by Metal-Organic Vapor-Phase Epitaxy,” Jpn. J. Appl. Phys., vol. 49, 051201(1-6), 2010.
  • M. Asada, “Theoretical analysis of spectral linewidth of terahertz oscillators using resonant tunneling diodes and their coupled arrays,” J. Appl. Phys., vol. 108, 034504(1-7), 2010.
List2010.pdf

2009

  • K. Furuya, O. Numakami, N. Yagi, S. Hori, T. Sugaya, K. Komori, M. Mori, Y. Okano, H. Muguruma, and M. Asada, “Analysis of Terahertz Oscillator Using Negative Differential Resistance Dual-Channel Transistor and Integrated Antenna”, Jpn. J. Appl. Phys., vol. 48, 04C146, 2009.
  • S. Suzuki, A. Teranishi, K. Hinata, M. Asada, H. Sugiyama, and H. Yokoyama, “Fundamental Oscillation of up to 831 GHz in GaInAs/AlAs Resonant Tunneling Diode”, Appl. Phys. Exp., vol. 2, 054501, 2009.
  • 浅田雅洋、「電子デバイスによるテラヘルツ光源」、KEC情報, No.209, pp.17-22, 2009.
    M. Asada, “Terahertz Sources Using Electron Devices”, KEC JOHO, No. 209, pp.17-22, 2009.
  • K. Urayama, S. Aoki, S. Suzuki, M. Asada, H. Sugiyama, and H. Yokoyama, ”Sub- Terahertz resonant Tunneling Diode Oscillators Integrated with tapered Slot Antennas for Horizontal Radiation”, Appl. Phys. Exp., vol. 2, 044501, 2009.
List2009.doc

2008

  • K. Furuya, T. Sugaya, K. Komori, and M. Asada, "An Analysis of Antenna Integrated THz Oscillator Using a Negative Differential Resistance Transistor", IEICE Trans. Commun. Vol.E91-B, pp.1800-1805, 2008.
  • S. Suzuki, K. Urayama, and M. Asada, "Coherent Power Combination in Multi-Element Sub-Terahertz Resonant Tunneling Diode Oscillators Coupled with Metal-Insulator-Metal Stub Structure", Applied Phys. Express, vol.1, pp.093001(1)- 093001(3), 2008.
  • M. Asada and S. Suzuki, "Theoretical Analysis of Coupled Oscillator Array Using Resonant Tunneling Diodes in Subterahertz and Terahertz Range", J. Appl. Phys., vol.103, pp.124514(1)- 124514(9), 2008.
  • N. Kishimoto, S. Suzuki, A. Teranishi, and M. Asada, "Frequency Increase of Resonant Tunneling Diode Oscillators in Sub-THz and THz Range Using Thick Spacer Layers", Applied Phys. Express, vol.1, pp.042003(1)-042003(3), 2008.
  • M. Asada, S. Suzuki, and N. Kishimoto, "Resonant Tunneling Diodes for Sub-Terahertz and Terahertz Oscillators", Jpn. J. Appl. Phys., vol.47, pp.4375-4384, 2008 (Invited &Review).
  • S. Suzuki, N. Kishimoto, M. Asada, N. Sekine, and I. Hosako, " Experiment and theory of the dependence of oscillation characteristics on structure of integrated slot antennas in sub-THz and THz oscillating resonant tunneling diodes", Jpn. J. Appl. Phys. Vol. 47, No.1, pp.64-67 (2008) .
List2008.doc

2007

  • M. Asada, N. Orihashi, and S. Suzuki, "Voltage-Controlled Harmonic Oscillation at About 1 THz in Resonant Tunneling Diodes Integrated with Slot Antennas", Jpn. J. Appl. Phys. Vol. 46, No. 5A, pp. 2904-2906 (2007).
  • S. Suzuki and M. Asada, "Proposal of Resonant Tunneling Diode Oscillators with Offset-Fed Slot Antennas in Terahertz and Sub-Terahertz Range", Jpn. J. Appl. Phys. Vol. 46, No. 1, pp. 119-121 (2007).
  • S. Suzuki and M. Asada, "Coherent Power Combination in Highly Integrated Resonant Tunneling Diode Oscillators with Slot Antennas", Jpn. J. Appl. Phys. Vol. 46, No. 46, pp. L1108-L1110 (2007).
List2007.doc

2006

  • T. Hori, T. Ozono, N. Orihashi, and M. Asada: "Frequency mixing characteristics of room temperature resonant tunneling diodes at 100 and 200 GHz," J. Appl. Phys., Vol.99, pp. 064508 1-7 (Mar. 2006).
  • M. Asada, N. Orihashi and S. Suzuki: "Experiment and Theoretical Analysis of Voltage-Controlled Sub-THz Oscillation of Resonant Tunneling Diodes", IEICE Trans. Electron., Vol. E89-C, No.7, pp.965-971 (July 2006).
  • M. Asada: "Generation of Terahertz Wave - An Approach from Electron Devices", 浅田雅洋:「テラヘルツ波の発生-電子デバイスからのアプローチ」電子情報通信学会誌, Proc. IEICE Japan, Vol.89, No.6, pp.456-460 (June 2006).

2005

  • 浅田雅洋:「共鳴トンネル構造における光支援トンネルとテラヘルツデバイス」、応用物理、vol.74、pp.587-592、2005年5月.
  • 浅田雅洋:「ナノ構造のテラヘルツ応答とテラヘルツデバイス」、ナノテクノロジー、pp.219-229、エヌティーエス出版、2005年.
  • N. Orihashi, S. Hattori, S. Suzuki and M. Asada: “Voltage-controlled sub-terahertz oscillation of resonant tunnelling diode integrated with slot antenna”, Electron. Lett., vol.41, pp.872-873, July 2005.
  • N. Orihashi, S. Suzuki, and M. Asada: ” One THz harmonic oscillation of resonant tunneling diodes”, Appl. Phys. Lett., vol.87, 233501, Dec.2005.
  • S. Suzuki, N. Orihashi, and M. Asada: “Mutual Injection Locking between Sub-THz Oscillating Resonant Tunneling Diodes”, Japan. J. Appl. Phys., vol.44, no.48, pp.L1439-L1441, Nov. 2005.
  • N. Orihahsi, S. Hattori, S. Suzuki, and M. Asada: “Experimental and Theoretical Characteristics of Sub-Terahertz and Terahertz Oscillations of Resonant Tunneling Diodes Integrated with Slot Antennas”, Japan. J. Appl. Phys., vol.44, no.11, pp.7809-7815, Nov. 2005
  • M.Asada: “Photon-Assisted Tunneling in Resonant Tunneling Structures and Its Application to Terahertz Devices”,「共鳴トンネル構造における光子支援トンネルとテラヘルツデバイス」, Oyo Butsuri (応用物理), vol.74, no.5, pp.587-592, 2005.

2004

  • M. Asada: "Proposal and Analysis of a Travelling-Wave Amplifier in Terahertz Range Using Two-Dimensional Electron Gas," Jpn. J. Appl. Phys., vol.42, no. 4A, pp.1332-1333, Apr. 2004.
  • M. Asada and M. Yamada: "Theoretical analysis of interaction between electron beam and electro- magnetic wave for unidirectional optical amplifier," J. Appl. Phys., no.9, vol.95, pp.5123-5130, May 2004.
  • M. Asada: "Proposal and Analysis of a Semiconductor Klystron Device for Terahertz Range Using Two-Dimensional Electron Gas," Jpn. J. Appl. Phys., vol.43, no.9A, pp.5967-5972, Sept. 2004.
  • H. Sato, H. Sato, T. Iguchi, and M. Asada: “Increase in Drive Current by Pt/W Protection on Short-Channel Schottky Source/Drain Metal-Oxide- Semiconductor Field-Effect Transistors with Metal Gate,” Jpn. J. Appl. Phys., vol.43, no.9A, pp. 6038-6039, Sept. 2004.
  • N. Orihashi, S. Hattori, and M. Asada: “Millimeter and Submillimeter Oscillators Using Resonant Tunneling Diodes with Stacked-Layer Slot Antenna,” Jpn. J. Appl. Phys., vol.43, no.10A, pp.L1309-L1311, Oct. 2004.

2003

  • M. Asada, "Quantum theory of a semiconductor klystron",Phys.Rev. B, vol.67, pp.115303 1-8, 2003.
  • M. Asada, "Theory of superradiance from photon-assisted tunneling electrons and its application to terahertz device",J. Appl. Phys., vol.94, no.1, 677-685, 2003.

2002

  • M.Tsutsui and M.Asada: “Dependence of Drain Current on Gate Oxide Thickness of p-type Vertical PtSi Schottky Source/Drain MOSFETs”, Japan.J.Appl. Phys., vol.41, No.1, pp.54-58 Jan. 2002.
  • M. Tsutsui, T. Nagai, and M. Asada: “Analysis and Fabrication of p-type Vertical PtSi Schottky Source/Drain MOSFET”, Trans. Electron. IEICE of Japan, vol.E85-C, No.5, pp.1191-1199 May 2002.

2001

  • M.Asada and N.Sashinaka, “Nonlinear Terahertz Gain Estimated from Multiphoton-Assisted Tunneling in Resonant Tunneling Diodes”, Jpn. J. Appl. Phys., vol.40, No.9, pp.5394-5398, Sept. 2001.
  • M. Asada, “Density-Matrix Modeling of Terahertz Photon-Assisted Tunneling and Optical Gain in Resonant Tunneling Structures”, Jpn. J. Appl. Phys., vol.40, No.9, pp.5251-5256, Sept. 2001
  • M. Asada, “Theoretical Analysis of Terahertz Harmonic Generation in Resonant Tunneling Diodes”, Jpn. J. Appl. Phys., vol.40, No.12, pp. 6809-6810, Dec. 2001

2000

  • M.Asada, Y.Oguma, and N.Sashinaka, "Estimation of Interwell Terahertz Gain by Photon-Assisted Tunneling Measurement in Triple-Barrier Resonant Tunneling Diodes", Appl. Phys. Lett., Vol.77, No. 5, pp.618-620, July 2000.
  • A. Itoh, M. Saitoh and M. Asada, “A 25-nm-long Channel Metal-Gate p-Type Schottky Source/Drain Metal-Oxide-Semiconductor Field Effect Transistor on Separation-by-Implanted-Oxygen Substrate”, Jpn. J. Appl. Phys., Vol.39, Part 1, No. 8, pp.4757-4758, August 2000
  • N.Sashinaka, Y.Oguma and M.Asada, “Observation of Terahertz Photon-Assisted Tunneling in Triple-Barrier Resonant Tunneling Diodes Integrated with Patch Antenna”, Jpn. J. Appl. Phys., Vol.39, Part 1, No. 8, pp.4899-4903, August 2000
  • M. Watanabe, Y. Iketani, M. Asada, "Epitaxial Growth and Electrical Characteristics of CaF2/Si/CaF2 Resonant Tunneling Diode Structures Grown on Si(111) 1 -off Substrate", Jpn. J. Appl. Phys., vol. 39, no. 10A, pp. L964-L967, July 2000.