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Home > Research Facilities
The QNERC houses state of the art equipment for the growth, fabrication, and characterization of materials and devices being studied by the members of the center. The photographs show a selection of the research equipment being used by the various groups. NERC also possesses STM, AFM, and SEM systems for studying and monitoring the surfaces and microstructure of materials and devices.
Organometallic Vapor Phase Epitaxy system Organometallic Vapor Phase Epitaxy system for the growth of high quality semiconductor quantum structures.
Ultra-high vacuum electron beam evaporator equipped with 6 metal sources for depositing high quality metal-semiconductor contact layers for semiconductor devices. Ultra-high vacuum electron beam evaporator
Ultra-high vacuum epitaxial growth system Ultra-high vacuum epitaxial growth system equipped with ionization and acceleration units for the growth of metal-insulator-semiconductor hetero structure.
Atomic-layer MOCVD system equipped with computerized precursor supply system and in-situ spectroscopic ellipsometry for oxidation of ultra thin films. Atomic-layer MOCVD system
A molecular beam epitaxy system A molecular beam epitaxy system for the fabrication of of III-V compound semiconductors, such as heavily carbon-doped p-type GaAs used for quantum effect devices composed of super lattice structures.
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