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> Research Facilities |
| The QNERC houses state of the
art equipment for the growth, fabrication, and characterization of
materials and devices being studied by the members of the center.
The photographs show a selection of the research equipment being used
by the various groups. NERC also possesses STM, AFM, and SEM systems
for studying and monitoring the surfaces and microstructure of materials
and devices. |
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Organometallic Vapor Phase Epitaxy
system for the growth of high quality semiconductor quantum structures. |
| Ultra-high vacuum electron beam
evaporator equipped with 6 metal sources for depositing high quality
metal-semiconductor contact layers for semiconductor devices. |
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Ultra-high vacuum epitaxial growth
system equipped with ionization and acceleration units for the growth
of metal-insulator-semiconductor hetero structure. |
| Atomic-layer MOCVD system equipped
with computerized precursor supply system and in-situ spectroscopic
ellipsometry for oxidation of ultra thin films. |
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A molecular beam epitaxy system
for the fabrication of of III-V compound semiconductors, such as heavily
carbon-doped p-type GaAs used for quantum effect devices composed
of super lattice structures. |
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