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■Research target
Analysis of organic field effect transistors (OFET) based on Maxwell-Wagner effect
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Figure 1:Device structure of Pentacene channel FET using ferroelectric film as a gate insulator.
Figure 2:Ids-Vds characteristics of Pentacene FET with ferroelectric gate insulator.
Recent Progress
[1] R. Tamura, E. Lim, T. Manaka, M. Iwamoto, "Analysis of pentacene Field Effect Transistor as a Maxwell-Wagner effect element",J. Appl. Phys.,100(2006)114515.[2] R. Tamura, E. Lim, T. Manaka, M. Iwamoto, "Analysis of Carrier Injection into Pentacene FET using Maxwell-Wagner Model",IEICE Trans. Electron., E89-C(2006)1760.
[3] R. Tamura, E. Lim, T. Manaka, and M. Iwamoto, "Analysis of threshold voltage shift of pentacene field effect transistor based on a Maxwell-Wagner effect", Jpn. J. Appl. Phys. in press (2006).
[4] R. Tamura, E. Lim, S. Yoshita, T. Manaka, and M. Iwamoto, " Analysis of threshold voltage shift of pentacene field effect transistors with ferroelectric gate insulator as Maxwell-Wagner effect", Thin Solid Fims in press (2007).