論文

ー研究業績リストー

2000年研究業績リスト
 1999年研究業績リスト（論文）
1998年研究業績リスト（論文）
1997年研究業績リスト（論文）
1996年研究業績リスト（論文）
1995年研究業績リスト（論文）

2000

学術誌

Shuu'ichirou Yamamoto and Shunri Oda ; Atomic Layer-by-Layer MOCVD of Complex Metal Oxides and Related Growth Technologies ; Advanced Materials CVD (2000)

K. Nishiguchi and S. Oda ; Conductance quantization in nanoscale vertical-structure silicon field-effect transistors with a wrap gate ; Applied Physics Letters ; 2922-2924 (2000)

Amit Dutta, Yoshinori Hayafune and Shunri Oda; Single Electron Memory Devices Based on Plasma Derived Silicon Nanocrystals ; Japanese Journal of Applied Physics(2000)

F. Yun, B. J. Hinds, S. Hatatani and S. Oda ;Room temperature single-electron narrow channel memory with silicon nanodots embedded in SiO2 matrix ; Japanese Journal of Applied Physics (2000)

S.Sugai, Y.Matsukawa, K.Shimosato and S.Oda ; Stabilization of Oxygen Diffusion in Ga-doped YBa2Cu3O7-σ Thin Films Observed by Spectroscopic Ellipsometry ; Japanese Journal of Applied Physics(2000)

A. Dutta, S. Oda, Y. Fu and M. Willander; Electron Transport in Nanocrystalline-Si Based single Electron Transistors ; Japanese Journal of Applied Physics(2000)

B. J. Hinds, K. Nishiguchi, A. Dutta, T. Yamanaka, S. Hatatani and S. Oda ; Two-Gate Transistor for the Study of Si/SiO2 Interface in SOI Nano-Channel and Nanocrystalline Si memory Device ; Japanese Journal of Applied Physics(2000)

Z. Wang, S. Oda, M. Karlsteen, U. Sodervall and M. Willander ; Structure analysis of SrTiO3/BaTiO3 strained superlattice films prepared by atomic-layer metalorganic chemical vapor deposition; Japanese Journal of Applied Physics(2000)

A. Dutta, S. P. Lee, Y. Hayafune, S. Hatatani and S. Oda ; Single Electron Tunneling Devices Based on Silicon Quantum Dots Fabricated by Plasma Process ; Japanese Journal of Applied Physics ; 264-267(2000)

K. Nishiguchi and S. Oda ; Electron transport in a single silicon quantum structure using a vertical silicon probe ; Journal of Applied Physics(2000)

Z. Wang and S. Oda ; Electrical properties of SrTiO3/BaTiO3 strained superlattice films prepared by atomic-layer metalorganic chemical vapor deposition ; Journal of Electrochemical Society (2000)

A. Dutta, S. P. Lee, Y. Hayafune and S. Oda ; Electron-Beam Direct-Writing using RD2000N for Fabrication of Nano-Devices ; Journal of Vacuum Science and Technology(2000)

K. Nishiguchi, S. Hara, T. Amano, S. Hatatani and S. Oda ; Preparation of Nanocrystalline Silicon Quantum Dots by Pulsed Plasma Processes with High Deposition Rates ; Materials Research Society Symposium Proceedings ; 43-48(2000)

Y. Fu, A. Dutta, M. Willander and S. Oda ; Electron wave interaction and carrier transport in Si -nanocrystal-based transistor ; Superlattices and Microstructures(2000)

Y. Fu, M. Willander, A. Dutta and S. Oda ; Electron conduction through Si-Nanocrystal-based single electron transistor at zero gate bias ; Superlattices and Microstructures(2000)

F. Yun, B. J. Hinds, S. Hatatani, S. Oda, Q. X. Zhao and M. Willander ; Study of Structural and Optical Properties of Nanocrystalline Silicon Embedded in SIO2 ; Thin Solid Films(2000)

国際会議

B. J. Hinds, A. Dutta, F. Yun, T. Yamanaka, S. Hatatani and S. Oda ; Single electron memory utilizing nano-crystalline Si over short channel silicon-on-insulator transistors ; Device Research Conference ; Denver ; (June 2000)

K. Nishiguchi and S. Oda ; Electron transport in a single silicon quantum dot structure using a vertical silicon probe ; Device Research Conference ; Denver (June 2000)

S. Oda ; Si Quantum Dot Devices and NeoSilicon ; JRCAT Workshop "Impact of Nanotechnology on Si Technology" ; Tsukuba (June 2000)

B. J. Hinds, A. Dutta, T. Yamanaka, S. Hatatani and S. Oda ; lifetime measurements of electrons stored nano-crystalline Si single electron memory devices ; Silicon Nanoelectrics Workshop Honolulu (June 2000 )

K. Nishiguchi and S. Oda ; Ballistic transport in a silicon vertical transistor ; Silicon Nanoelectrics Workshop ; Honolulu (June 2000)

Shunri Oda ; Electron Transport in Silicon Nanodevices ; The 8th Asia Pacific Physics Conference Taipei (August 2000)

Katsuhiko Nishiguchi, X. Zhao and Shunri Oda ; Fabrication and characterization of nanocrystalline silicon electron emitter ; International Conference on Physics of Semiconductors ; Osaka (September 2000)

Katsuhiko Nishiguchi and Shunri Oda ; Ballistic transport under magnetic field in silicon vertical transistors ; International Conference on Physics of Semiconductors ; Osaka (September 2000 )

Bruce J. Hinds, Amit Dutta, Takayuki Yamanaka, Shigeo Hatatani and Shunri Oda ; Nano-Crystalline Si as Floating Gate Node for Single Electron Memory Devices ; International Symposium on Formation, Physics and Device Application of Quantum Dot Structres ; Sapporo (September 2000)

Shunri Oda, Amit Dutta, Katsuhiko Nishiguchi, Bruce J.Hinds, X. Zhao and Shigeo Hatatani ; Single Electron Tunneling and Ballistic Transport in Silicon Nanodevices ; International Symposium on Formation, Physics and Device Application of Quantum Dot Structres ; Sapporo (September 2000)

B.J.Hinds, T.Ymanaka, S.Hatatani, S.Oda ; Charge Storage Mechanism in Nano-crystalline Si based Single-electron Memories Materials Research Society ; Boston (November 2000)

J.Ohmachi, R.Nkamura, K.Nishiguchi, S.Oda ; Retardation in the Oxidation rate of Nanocrystalline Silicon Quantum Dots ; Materials Research Society ; Boston (November 2000)

K.Nishiguchi, S.Oda ; Fabrication and Characterization of Cold Electron Emitter based on Nanocrystalline Silicon Quantum Dots ; Materials Research Society ; Boston (November 2000)

国内会議

小田俊理 ; シリコンナノデバイスとネオシリコン ; 異分野研究者交流フォーラム 69 ; 大仁 (March 2000)

西口克彦、小田俊理 ; シリコン縦型トランジスタによるバリスティック伝導の観測 ; 第47回応用物理学関係連合講演会 975 ; 東京 (March 2000)

Y. Feng, B. J. Hinds, A. Dutta, S. Hatatani and S. Oda ; Single electron memory from nano-crystalline Si dots fromed by the disproportiation reaction of silicon suboxide ; 第47回応用物理学

B.J.Hinds, T.Yamanaka, S.Hatatani, S.Oda ; Lifetime Analysis of Single Electron Memory from Nano-crystalline Si Dots Floating-Gate over Nano-Scale Channel Transistor ; 第61回応用物理学会学術講演会 ; 札幌 (September 2000)

吉田征一郎、西口克彦、小田俊理 ; シリコン量子ドットを用いた短チャネルスイッチング素子の提案 ; 第61回応用物理学会学術講演会 ; 札幌 (September 2000)

山中崇行、 B.J.ハインズ、畑谷成郎、小田俊理 ; ナノ結晶シリコンを用いたナノチャネル単電子メモリの作製 ; 第61回応用物理学会学術講演会 ; 札幌 (September 2000)

松川康成、下里圭司、服部健雄、小田俊理 ; 分光エリプソメトリによるMOCVD成長YBCO薄膜のその場観察(・）; 第61回応用物理学会学術講演会 ; 札幌 (September 2000)

西口克彦、小田俊理 ; セルフアライン・ダブルゲート単電子トランジスタの作製 ; 第61回応用物理学会学術講演会 ; 札幌 (September 2000)

西口克彦、趙新為、小田俊理 ; ナノクリスタルシリコンを用いた平面型電子放出素子の作製 ; 第61回応用物理学会学術講演会 ; 札幌 (September 2000)

その他

S. Oda ; Exploring for ultrahigh performance electron devices based on quantum effects ; FED Journal 48 (2000)

小田俊理; 量子化機能素子展望：シリコンナノデバイスとネオシリコンの提案; FEDジャーナル 3-7 (2000)

著書

S. Oda ; Silicon Quantumn Dot Structure by Digital CVD Quantum Structured Semiconductor (Chapman & Hall) (2000)

1999

学術誌

A.Dutta, S.P.Lee, S.Hatatani and S.Oda: Silicon Based Single Electron Memory Using Multi-Tunnel Junction Fabricated by Electorn Beam Direct Writing; Applied Physics Letters 75 ,1422-1424 (1999)

Amit Dutta, Shao Ping Lee, Yoshinori Hayafune, Shigeo Hatatani and Shunri Oda: Single Electron Tunneling Devices Based on Silicon Quantum Dots Fabricated by Plasma Process; Japanese Journal of Applied Physics (2000)

S.Yamamoto, S.Sugai, Y. matsukawa, A. Sengoku, H. Tobisaka, T. Hattori and S.Oda: In situ growth monitoring during metalorganic chemical vapor deposition of YBa2Cu3Ox thinfilms by spectroscopic ellipsometry; Japanese Journal of Applied Physics 38,L632-L(1999)

Shuu'ichirou Yamamoto, Kouji Nagata, Satoshi Sugai, Akio Sengoku, Yasunari Matsukawa, Takeo Hattori and Shunri Oda: Reproducible Growth of Metalorganic Chemical Vapor Deposition Derived YBa2Cu3Ox Thinfilms Using Ultrasonic Gas Concentration Analyzer; Japanese Journal of Applied Physics (1999)

Zaiyang Wang, Tomohiko Yasuda, Shigeo Hatatani and Shunri Oda: Enhanced Dielectric Properties in SrTiO3/BaTiO3 Strained Superlattice Structures Prepared by Atomic-Layer Metalorganic Chemical Vapor Deposition; Japanese Journal of Applied Physics 38,6817-6820 (1999)

S.Yamamoto, S.Sugai and S.Oda: In situ process monitoring of MOCVD of superconducting and dielectric oxide thinfilms; Journal de Physique IV 9,Pr8-1013-1(1999)

K.Nishiguchi, S.Hara, T.Amano, S.Hatatani and S.Oda: Preparation of Nanocrystalline Silicon Quantum Dots by Pulsed Plasma Processes with High Deposition Rates; Materials Research Society Symposium Proceedings (2000)

D.F.Moore, W.I.Milne and S.Oda: Nanostructured materials and devices for sensor and electronic applications; Power Engineering Journal; 13; 89-93; invited (1999)

国際会議

Z.Wang, T.Yasuda, S.Hatatani and S.Oda: Atomic-layer MOCVD of SrTiO3/BaTiO3 superlattice structures for high-εdielectrics; International Symposium on Future of Intellectual Integrated Electronics ; 163-167; Sendai; (1999)

K.Nishiguchi, S.Hara, T.Amano, S.Hatatani and S.Oda: Preparation of nanocrystalline silicon quantum dots by pulsed plasma processed with high deposition rates; MRS 99 Spring meeting; San Francisco; (1999)

F.Yun, B.J.Hinds, S.Hatatani, S.Oda, Q.X.Zhao and M.Willander: Study of optical properties related to the passivation of nanocrystalline silicon and SiO2 interfacial defect states; IUMRS-ICAM'99 Symposium F: Thin Films and Multilayers; Beijing; (1999)

F.Yun, A.Dutta, B.J.Hinds, K.Nishiguchi, S.Hatatani, S.Oda and M.Willander: Fabrication and characterization of silicon quantum-dot memory by ultrafine silicon particles embedded in SiO2; IUMRS-ICAM'99 Symposium M: Si-based Materials and Devices; Beijing; (1999)

F.Yun, K.Nishiguchi, A.Dutta, B.Hinds, S.Hatatani, S.Oda and M.Willander: Single electron transistor using silicon quantum dots embedded in SiO2 matrix; IUMRS-ICAM'99 Symposium O: Low Dimensional Structures and Quantum Devices; Beijing; (1999)

A.Dutta, S.P.Lee, Y.Hayafune, S.Hatatani, S.Oda and M.Willander: Observation of Quantum Effects and Coulomb Blockade in Nanodevices wieh Plasma Derived Silicon Nanocrystals; Silicon Nanoelectronics Workshop; Kyoto; (1999)

Y.Fu, M.Willander, F.Yun and S.Oda: Electronic band structures in Si nanocrystals with applications to dot-based MOSFETs; Silicon Nanoelectronics Workshop; Kyoto; (1999)

A.Dutta, S.P.Lee and S.Oda: Electrical characterization of Si-based single electron memory cell with multiple tunnel junctions; 9th Int. Conf. Modulated Semiconductor Structures; Fukuoka; (1999)

S.Oda, S.Yamamoto and S.Sugai: In-situ process monitoring of MOCVD of superconducting and dielectric oxide thinfilms; Euro CVD 12; Barcelona; (1999)

Zaiyang Wang, Tomohiko Yasuda, Shigeo Hatatani and Shunri Oda: Electrical properties of SrTiO3/BaTiO3 strained superlattices formed by atomic-layer MOCVD; Electrochemical Society; Honolulu; (1999)

国内会議

A.Dutta, S.P.Lee, Y.Hayafune, S.Hatatani, S.Oda: Fabrication of Single Electron Tunneling Devices using Silicon Quantum Dots; 第46回応用物理学関係連合講演会; 544; 野田; (1999)

早舩嘉典、A.Dutta,S.P.Lee, 畑谷成郎、小田俊理：ナノ結晶Siフローティングゲートを有する単電子メモリの作製と特性評価；第46回応用物理学関係連合講演会；550; 野田; (1999)

S.P.Lee, A.Dutta, Y.Hayafune,S.Hatatani,S.Oda: Electrical Characterisation of Si-based Single Electron Memory Cell with Multiple Tunnel Junctions; 第46回応用物理学関係連合講演会; 551; 野田; (1999)

王在陽、安田智彦、畑谷成郎、小田俊理：SrTiO3/BaTiO3超格子薄膜の結晶性評価およびTEM観察；第46回応用物理学関係連合講演会；559；野田; (1999)

松川康成、須貝聡、仙石暁生、山本修一郎、服部武雄、小田俊理：分光エリプソメトリによるMOCVD成長YBCO薄膜のその場観察（・）；第46回応用物理学関係連合講演会；267；野田; (1999)

研究報告会

S.Oda, S.Yamamoto, S.Sugai, Y.Matsukawa and A.Sengoku: Realtime process monitoring inMOCVD of oxide superconducting films; 10年度特定領域研究「ボルテックス・エレクトロニクス」第2回全体会議; 東京; (1999)

S.Oda, A.Dutta, S.Hara, Y.Hayafune, S.P.Lee, K.Nishiguchi, B.J.Hinds and S.Hatatani：プラズマCVDシリコン量子ドットの粒径制御と単電子輸送特性；平成10年度特定領域研究報告会；東京; (1999)

セミナー

著書

S. Oda, S. Yamamoto, Z. Wang, H. Tobisaka and K. Nagata: ATOMIC LAYER MOCVD OF OXIDE SUPERCONDUCTORS AND DIELECTRICS; High-Temperature Superconductors and Novel Inorganic Materials, NATO ASI Series 3 vol. 62 (eds. by G. Van Tendeloo, E.V. Antipov and S.N. Putilin, Kluwer Academic, Dordorecht); 75-78; (1999)

その他

1998

学術誌

M.Otobe, H.Yajima and S.Oda: Observation of Single Electron Charging Effect in Nanocrystalline Silicon at Room Temperature Using Atomic Force Microscopy; Applied Physics Letters; 72; 1089-1091 (1998)

S.Suzuki, H.Tobisaka and S.Oda; Electric Properties of Coplanar High-Tc Superconducting Field Effect Devices; Japanese Journal of Applied Physics; 37; 492-495; (1998)

Z.Wang and S.Oda; Atomic Layer-by-Layer Metal-Organic Chemical Vapor Deposition of SrTiO3 Films with a Very smooth Surface; Japanese Journal of Applied Physics; 37; 942-947; (1998)

Shigeru SUZUKI, Satoshi SUGAI and Shunri ODA; Electric Field-effect Enhancement by a Combination of Coplanar High-Tc Superconducting Devices with Step Edhe Junctions; Japanese Journal of Applied Physics; 37; L784-L786; (1998)

A. Dutta, S. P. Lee, S. Hatatani and S. Oda; Nonvolatile Single Electron Memory Devices Using Multi-tunnel Junctions Fabricated by Direct Dlectron Beam Lithography; (1998)

Shunri Oda; Silicon Quantumn Dot Structure by Digital CVD; (1998)

国際会議

Amit Dutta, Y. Hayafune, S.P. Lee, S. Hara, K. Nishiguchi and S. Oda; Fabrication of Nanodevices Using Silicon Quantum Dots; International Symposium on Formation, Physics and Device Application of Quantum Dot Structres; Sapporo; (1998)

Shunri Oda, Shuu'ichirou Yamamoto, Zaiyang Wang, Hiroshi Tobisaka and Kouji Nagata; ATOMIC LAYER MOCVD OF OXIDE SUPERCONDUCTORS AND DILECTRICS; NATO Workshop MSU-HTSC V; Moscow; (1998) 　invited

Shunri Oda; Single electron tunneling in nanocrystalline silicon prepared by plasma processes; Sweden-Japanese Workshop; June; (1998) 　invited

Shunri Oda; Preparation of silicon nanostructures by plasma CVD and EB processes; FED-PDI Joint Conference on 21st Century Electron Devices; June; (1998) 　invited

Shunri Oda and Amit Dutta; Single electron devices based on nanocrystalline silicon; International Workshop on Advanced LSIs-Scaled Device/Process and High Performance Circuits-; July; (1998) 　invited

A. Dutta, S. P. Lee, S. Hatatani and S. oda; Nonvolatile Single Electron Memory Devices Using Multitunnel Junctions Fabricated by Direct Dlectron Beam Lithography; (1998)

Shunri Oda, Amit Dutta, S-P.Lee, Y.Hayafune, K.Nishiguchi, B.J.Hinds and S.Hatatani; Single-Electron Tunneling in Nanocrystalline Silicon; Solid State Devices and Materials Conference, Extended Abstracts; September; (1998) 　invited

国内会議

小田俊理；VHF帯容量結合プラズマの特色と課題；第45回応用物理学関係連合講演会；八王子； (1998) 　invited

小田俊理、Amit Dutta；シリコン量子ドット単一電子デバイス；電気化学会第65回大会；東京；(1998) 　invited

松川康成、鳶坂浩志、須貝聡、山本修一郎、服部健雄、小田俊理；分光エリプソメトリ－によるYBCO薄膜のその場MOCVD成長観察","第59回応用物理学会学術講演会；広島；September；(1998)

須貝聡、仙石暁生、山本修一郎、服部健雄、小田俊理；MOCVD法によるYBCO薄膜堆積時の原料ガス濃度モニターと制御；第59回応用物理学会学術講演会；広島；September；(1998)

原聡二、西口克彦、畑谷成郎、小田俊理；ナノクリスタルシリコンの粒径制御と堆積速度の向上；第59回応用物理学会学術講演会；広島；September；(1998)

王在陽、安田智彦、畑谷成郎、小田俊理；原子層MOCVD法によるBaTiO3/超格子薄膜の作製；第59回応用物理学会学術講演会；広島；September；(1998)

早船義典、A. Dutta、S. P. Lee、西口克彦、畑谷成郎、小田俊理；微結晶Si量子ドットフローティングゲートを有する単一電子メモリの作製；第59回応用物理学会学術講演会；広島；September；(1998)

A. Dutta, S. P. Lee, Y. Hayafune, K. Nishiguthi, S. Hatatani and S. Oda; Fabrication of Single Electron Tunneling Devises using Silicon Quantum Duts; 第59回応用物理学会学術講演会; 広島; September; (1998)

S. P. Lee, A. Dutta, Y. Hayafune, K. Nishiguchi, T. Amano, S. Hatatani and S. Oda; Non-volatile Single Electron Memory Cell with Multiple Tunnel Junctions; 第59回応用物理学会学術講演会;　広島; September (1998)

研究報告会

小田俊理；シリコン量子ドットの表面制御と単電子トンネル特性評価；平成9年度重点領域研究報告会；東京；(1998)

小田俊理、王在陽；原子層ＭＯＣＶＤ法による高誘電体超格子薄膜の作製；重点領域研究「知能集積エレクトロニクス」９年度シンポジウム；東京；(1998)

S.Oda, S.Yamamoto and S.Sugai; Preparation of high-quality thinfilms for vortex devices by atomic layer MOCVD; 10年度特定領域研究「ボルテックス・エレクトロニクス」第1回全体会議；須磨 (1998)

S.Yamamoto, S.Sugai, S.Suzuki, A.Kawaguchi and S.Oda; Atomically Controlled Interface of Superconductor Hybrid System Special Session for Superconductive Devices; 25-30; Tokyo (1998)

セミナー

Shunri Oda; Nanocrystalline silicon and related device processing for SET devices; Cambridge University Enginerring Department Lecture Series; Cambridge University Engineering Department,Cambridge, UK; (1998) 　invited

Shunri Oda; HTS devices based on atomic-layer MOCVD YBCO thinfilms; University of Birmingham Superconductivity Research Group SeminarUniversity of Birmingham, UK; (1998) 　invited

Shunri Oda; Preparation and characterization of nanocrystalline silicon for single electron devices; Nanjing University, Dept. of Physics; May; (1998) 　invited

Shunri Oda; High-temperature superconducting devices based on atomic-layer MOCVD YBCO films; Nanjing University, Dept. of Physics; May; (1998) 　invited

小田俊理；極微構造を創る；大田区区民大学；June; (1998) 　invited

著書

S. Oda, S. Yamamoto, Z. Wang, H. Tobisaka and K. Nagata; ATOMIC LAYER MOCVD OF OXIDE SUPERCONDUCTORS AND DIELECTRICS; NATO ASI Series; (1998) 　invited

その他

小田俊理；原子層ＭＯＣＶＤ法によるスーパーセラミックス超格子薄膜の作製と評価；NSG Found. Mat. Sci.Eng. Rep；(1998)

小田俊理；ケンブリッジ大学の産学協同システムについて；東京工大クロニクル；(1998)

小田俊理；21世紀の電子デバイスFED-PDIジョイントコンファレンス；FED Journal; (1998)

D.F.Moore, K.H.Ploog and S.Oda; FED-PDI Joint Conference on 21st Century Electron Devices FED Journal; 9; 48-49; (1998)

1997

学術誌

Shuu'ichirou YAMAMOTO, Atsushi KAWAGUCHI, Kouji NAGATA, Takeo HATTORI and Shunri ODA: Atomic layer-by-layer epitaxy of oxide superconductors by MOCVD Applied Surface Science; 112; 30-37 (1997)

Shuu'ichirou YAMAMOTO, Tomotaka WATANABE and Shunri ODA: Junction Formation in YBaCuO Thin Films by Scanning Probe; J. Low. Temp. Physics; 106; 423-432 (1997)

S. Oda: Preparation of Nanocrystalline Silicon Quantum Dot Structure by Pulsed Plasma Processes; Adv. Colloid and Interface Sci.; 71-72; 31-47 (1997)

Toru Ifuku, Masanori Otobe, Akira Itoh and Shunri Oda;Fabrication of Nanocrystalline Silicon with Small Spread of Particle Size by Pulsed Gas Plasma;Japanese Journal of Applied Physics; 4031-4034 (1997)

Amit Dutta, Masao Kimura, Yoshiaki Honda, Masanori Otobe Akira Itoh and Shunri Oda; Fabrication and Electrical Characteristics of Single Electron Tunneling Devices Based on Si Quantum Dots Prepared by Plasma Processing; Japanese Journal of Applied Physics; 4038-4041 (1997)

Yoshihiko Kanemitsu, Shinji Okamoto, Masanori Otobe and Shunri Oda; Photoluminescnce Mechanism in Surface-Oxidized Silicon Nanocrystals; Phys. Rev. B; 55; R7375-R7378 (1997)

田部道晴、小田俊理、平本俊郎、中里和郎、雨宮好仁; 単電子デバイス・回路の研究状況と今後の展望; 応用物理; 66; 99-108 (1997) 　invited

Akira Itoh, Toru Ifuku, Masanori Otobe and S.Oda; Grain-Size Control of Nanocrystalline Silicon by Pulsed Gas Plasma Process; Materials Research Society Symposium Proceedings; 452; 749-754 (1997)

S. Yamamoto, A. Kawaguchi and S. Oda; Anomalous Current-Voltage Characteristics along the c-Axis in YBaCuO Thin Films Prepared by MOCVD and AFM Lithography; Phisica C;293; 244-248 (1997)

Shigeru Suzuki and S.Oda; Proposal of coplanar-type high-Tc superconducting field-effect devices; Phisica C; 282-287; 2495-2496 (1997)

国際会議

Shigeru Suzuki and Shunri Oda; Proposal of Coplanar-type high-Tc superconducting field-effect devices; M2S-HTSC-V Abstract ; 287 (1997)

S. Yamamoto, A. Kawaguchi and S. Oda; Anomalous Current-Voltage Characteristics along the c-Axis in YBaCuO Thin Films Prepared by MOCVD and AFM Lithography; Int. Symp. Intrinsic Josephson Effect and THz Plasma Oscillations in High Tc Superconductors (1997)

Shigeru Suzuki and Shunri Oda; Fabrication of Coplanar-type high-Tc superconducting field-effect devices; 5th Int. Workshop on High-Temperature Superconducting Electron Devices;Matsuyama (1997) 　invited

S. Oda; Fabrication of Silicon Quantum Dots by Pulsed-Gas Plasma Processes and Their Properties ; Int. Symp. Nanostructures; Phys. Technol. St. Petersburg ; 281 (1997) 　invited

S. Oda; Grouth Mechanism of YBCO thinfilms by MOCVD; Int. Workshop on Superconductivity ; Hawaii (1997) 　invited

Amit Dutta, Yukihisa Kinugasa, Akira Itoh and Shunri Oda; Fabrication and Electrical Properties of Silicon Nanocrystals; Silicon Nanoelectronics Workshop; Kyoto; (1997)

S. Oda; Single Electron Tunneling in Silicon Quantum Dots Prepared by Plasma Processing; Symp. Solid State Physics; Kunsan, Korea; July; (1997) 　invited

S. Oda; Single Electron Devices Based on Silicon Quantum Dots; 20th Electrical Engineering Conference; Bangkok, Thailand; November; (1997) 　invited

S. Oda and A Dutta; Fabrication and Characterization of Silicon Quantum Dots; 3rd Int. Workshop on Quantum Functional Devices; Gaithersburg, MD, USA; November; (1997) 　invited

国内会議

A. Dutta, S. Kawakami, Y. Kinugasa, A. Itoh, S. Vyshenski and S.Oda; A Proposal for Measurement of Electrical Characteristics of a Single Silicon Quantum Dot Deposited by Very High Frequency Plasma Process; 第44回応用物理学関係連合講演会 (1997)

Shigeru Suzuki and S.Oda; Proposal of coplanar-type high-Tc superconducting field-effect devices; Phisica C (1997)

Shigeru Suzuki, Hiroshi Tobisaka and Shunri Oda; Fabrication of the coplanar-type superconducting electric field-effect device; 第44回応用物理学関係連合講演会 (1997)

Atsushi Kawaguchi, Shuuichiro Yamamoto and Shunri Oda; Current-voltage characteristics of intrinsic Josephson junction using YBCO thin films; 第44回応用物理学関係連合講演会 (1997)

Koji Nagata, Shuuichiro Yamamoto, Takeo Hattori and Shunri Oda; Real-time measurement of the concentration pf DPM compounds by concentration measurement system using ultrasonics; 第44回応用物理学関係連合講演会 (1997)

A. Dutta, S. P. Lee, Y. Hayafune, K. Nishiguchi and S. Oda; Nanoscale Electron Beam Lithography Using RD2000N Negative-ion Resist and Fabrication of Silicon Nanodevice Structures; 第58回応用物理学会学術講演会; 秋田, October, (1997)

王在陽、鈴木武史、小田俊理; 原子層ＭＯＣＶＤ法で作製したSrTiO3薄膜のＸ線回折及びＡＦＭによる評価; 第58回応用物理学会学術講演会; 秋田, October, (1997)

鈴木茂、須貝聡、鳶坂浩志、小田俊理; サイドゲートを有するステップエッジ接合の電界効果; 第58回応用物理学会学術講演会; 秋田, October, (1997)

山本修一郎、鳶坂浩志、須貝聡、小田俊理; ＭＯＣＶＤ法によるYBaCuO薄膜上への極薄絶緑層の作製; 第58回応用物理学会学術講演会; 秋田, October, (1997)

小田俊理; ナノクリスタルシリコンの粒径・位置制御と電子デバイスへの応用 ; 第58回応用物理学会学術講演会; 秋田, October, (1997) 　invited

アミット・ダッタ、小田俊理; シリコン量子ドットの表面酸化膜制御と単電子輸送 ; 第58回応用物理学会学術講演会; 秋田, October, (1997) 　invited

鳶坂浩志、山本修一郎、小田俊理; 原子層MOCVD法により作製したYBa2Cu3Ox薄膜の分光エリプソメトリーによる評価; 第58回応用物理学会学術講演会; 秋田, October, (1997)

絹笠幸久、原聡二、伊福徹、伊藤明、小田俊理; ナノクリスタルシリコン（nc-Si）の粒径制御; 第58回応用物理学会学術講演会; 秋田, October, (1997)

長田浩二、山本修一郎、服部健雄、小田俊理; 超音波濃度計によるDPM系原料のリアルタイム濃度測定（・）; 第58回応用物理学会学術講演会; 秋田, October, (1997)

鈴木茂、小田俊理; 高温超伝導平面型電界効果素子; 日本学術振興会　超伝導エレクトロニクス第146委員会第60回研究会資料; 23-27 室蘭, July, (1997) 　invited

研究報告会

小田俊理、伊藤明; 原子層ＭＯＣＶＤ法による超低～超高誘電体多層格子酸化膜の作製; 平成8年度重点領域研究報告会; 194-197; March (1997)

小田俊理、伊藤明; シリコン量子ドットの表面制御と単電子トンネル特性評価; 平成8年度重点領域研究報告会; 75-78; February (1997)

その他

小田俊理; ナノスケール電子デバイスＦＥＤケンブリッジジョイントコンファレンス報告; ＦＥＤジャーナル; 7/2; 63-66 (1997)

1996

学術誌

Masanori OTOBE, Jun KAWAHARA and Shunri ODA: Preferential Nucleation of Nanocrystalline Silicon along Microsteps; Japanese Journal of Applied Physics, 35 [2] 1325-1328 (1996)

Masanori OTOBE, Tomonori KANAI, Toru IFUKU, Hiroshi YAJIMA, and Shunri ODA: Nanocrystalline silicon formation in a SiH4 plasma cell; Journal of Non-Crystalline Solids [198-200] 875-878 (1996)

Shuu'ichirou YAMAMOTO, Atsushi KAWAGUCHI and Shunri ODA: Preparation of Thin Films of YBa2Cu30x with a Smooth Surface by Atomic Layer MOCVD; Mat. Sci. Eng. B 87-92 (1996)

国際会議

Shunri ODA, Masao KIMURA and Masanori OTOBE: Coulomb staircase characteristics in silicon quantum dots fabricated by plasma processing; Silicon Nanoelectronics Workshop, Honolulu (1996)

Shunri Oda; Atomic layer-by-layer epitaxy of oxide superconductors by MOCVD; 4th Int. Symp. Atomic Layer Epitaxy; 30-37; Linz, Austria ; (1996) 　invited

Shunri Oda; Fabrication of Silicon Quantum Dots by Plasma Processing; Cambridge-FED Workshop on Future Nano-scale Electron Devices; Cambridge, UK ; (1996) 　invited

Shunri Oda; Atomic layer-by-layer MOCVD of thinfilms of Oxide superconductors; Int. Workshop on Chemical Designing and Processing of High-Tc Superconductors II; Yokohama ; (1996) 　invited

Shunri Oda; Junction Formation in YBaCuO Thin Films bu Scanning Probe; Weak Superconductivity Symposium; 423-432; Smolenice, Slovakia; (1996)

国内会議

小田俊理、乙部雅則、木村匡雄、伊福徹、矢島弘士、大西満：プラズマプロセスによるシリコン量子ドットの作製と物性評価；応用電子物性分科会誌、［2］1, 30-35 （1996）

小田俊理：原子層ＭＯＣＶＤ法による超低～超高誘電体多層超格子酸化膜の作製；平成7年度重点領域研究報告会「極限集積化シリコン知能エレクトロニクス」報告会，　194-199 （1996）

木村匡雄、乙部雅則、小田俊理：ナノ結晶Si擬1次元SET接合アレイの作製と評価；第43回応用物理学関係連合講演会, 26p-ZA-1 (1996)

伊福徹、乙部雅則、小田俊理：ガスパルス供給プラズマを用いた粒径8nm±1nmの微結晶Siの作製；第43回応用物理学関係連合講演会, 26a-TC-1 (1996)

乙部雅則、大西満、小田俊理：AFMによるナノ結晶Siの位置制御；第43回応用物理学関係連合講演会,29a-ZX-1 (1996)

乙部雅則、矢島弘士、小田俊理：ナノ結晶Siからの室温クーロン階段の粒径依存性；第43回応用物理学関係連合講演会, 26p-ZA-2 (1996)

山本修一郎、鳶坂浩志、小田俊理：原子層ＭＯＣＶＤ法によるSm3O3/YBa2Cu3Ox積層構造の作製；第57回応用物理学会学術講演会, 7a-SKA-17(1996)

川口篤史、山本修一郎、小田俊理：AFMリソグラフィーによる薄膜イントリンシックジョセフソン接合の作製；第57回応用物理学会学術講演会, 7p-KB-4 (1996)

伊福徹、伊藤明、小田俊理：シリコン量子ドットの表面酸化；第57回応用物理学会学術講演会, 9a-B-8 (1996)

1995

Tetsuya TSUKUI and Shunri ODA ; 'Computer Simulation and Measurement of Capacitance-Voltage Characteristics in Quantum Wire Devices of Trench-Oxide MOS Structure' ; Jpn. J. Appl. Phys., 34, pp. 874-877 (1995)

Shunri ODA, Hideaki ZAMA and Shu'ichirou YAMAMOTO ; 'Superconductivity and Surface Morphology of YBCO Thin Films Prepared by Metalorganic Chemical Vapor Deposition' ; IEEE Transactions on Applied Superconductivity, 5, pp.1801-1804 (1995)

Shunri ODA and Masanori OTOBE; 'Preparation of Nanocrystalline Silicon by Pulsed Plasma Processing' ; Mat. Res. Soc. Symp. Proc., 358, pp. 721-731 (1995)

Masanori OTOBE, Tomonori KANAI, Hidetaka HONJI, Masao KIMURA and Shunri ODA ; 'Nanocrystalline Silicon Formed in Very-High-Frequency SiH4 Plasma '; Proc. 12th Symp. Plasma Processing, (1995)

Shuu'ichirou YAMAMOTO, Atsushi KAWAGUCHI and Shunri ODA; 'Atomic Layer MOCVD of Thin Films of Oxide Superconductors' ; 1st T.I.T. International Symposium on Oxide Electronics, pp.17-21(1995)

Masanori OTOBE, Tomonori KANAI and Shunri ODA ; 'Farication of Nano-crystalline Si by SiH4 Plasma Cell' ; Mat. Res. Soc. Symp. Proc., (1995)

Shunri ODA; 'Atomic Layer MOCVD of YBa2Cu3Ox Films'; Mat. Res. Soc. Symp.Spring Meeting Abstracts, P. 201 (1995)

Shunri ODA and Masanori OTOBE; 'Fabrication of Nanocrystalline Silicon Using VHF Plasma Cells of SiH4 and H2' ;